Heterojunction bipolar transistor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Heterojunction bipolar transistor" in English language version.

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Herbert Kroemer (1957). "Theory of a Wide-Gap Emitter for Transistors". Proceedings of the IRE. 45 (11): 1535–1537. doi:10.1109/JRPROC.1957.278348. S2CID 51651950.
12.5 nm base pseudomorphic heterojunction bipolar transistors achieving f_T=710GHz f_T=710GHz and f_MAX=340GHz Hafez et al, Appl. Phys. Lett. 87, 252109, 2005 doi:10.1063/1.2149510

The phototransistor effect: "The Kroemer factor is a function of the physical parameters of the materials making up the heterojunction, and can be expressed in the following way [formula given]"

Herbert Kroemer (1957). "Theory of a Wide-Gap Emitter for Transistors". Proceedings of the IRE. 45 (11): 1535–1537. doi:10.1109/JRPROC.1957.278348. S2CID 51651950.