High-electron-mobility transistor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "High-electron-mobility transistor" in English language version.

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10doi.org

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6harvard.edu

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3worldcat.org

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2semiconductor-today.com

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2espacenet.com

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2sciencedirect.com

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2semanticscholar.org

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1web.archive.org

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1patents.google.com

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doi.org

Chen, Kevin J.; Häberlen, Oliver; Lidow, Alex; Tsai, Chun lin; Ueda, Tetsuzo; Uemoto, Yasuhiro; Wu, Yifeng (2017). "GaN-on-Si Power Technology: Devices and Applications". IEEE Transactions on Electron Devices. 64 (3): 779–795. Bibcode:2017ITED...64..779C. doi:10.1109/TED.2017.2657579.
Medjdoub, F. (2016). Medjdoub, Farid (ed.). Gallium Nitride (GaN): Physics, Devices, and Technology (1st ed.). CRC Press. doi:10.4324/b19387. ISBN 9781315215426.
Mimura, Takashi (March 2002). "The early history of the high electron mobility transistor (HEMT)". IEEE Transactions on Microwave Theory and Techniques. 50 (3): 780–782. Bibcode:2002ITMTT..50..780M. doi:10.1109/22.989961.
Mimura, Takashi (8 December 2005). "Development of High Electron Mobility Transistor" (PDF). Japanese Journal of Applied Physics. 44 (12R): 8263–8268. Bibcode:2005JaJAP..44.8263M. doi:10.1143/JJAP.44.8263. ISSN 1347-4065. S2CID 3112776. Archived from the original (PDF) on 8 March 2019.
Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.; Olson, D. T. (1993). "High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction". Applied Physics Letters. 63 (9): 1214–1215. Bibcode:1993ApPhL..63.1214A. doi:10.1063/1.109775.
Ye, P. D.; Yang, B.; Ng, K. K.; Bude, J.; Wilk, G. D.; Halder, S.; Hwang, J. C. M. (1 September 2004). "GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al2O3 AS GATE DIELECTRIC AND SURFACE PASSIVATION". International Journal of High Speed Electronics and Systems. 14 (3): 791–796. doi:10.1142/S0129156404002843. ISSN 0129-1564.
Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison (2021). "GaN-based power devices: Physics, reliability, and perspectives". Journal of Applied Physics. 130 (18): 181101. Bibcode:2021JAP...130r1101M. doi:10.1063/5.0061354. hdl:11380/1255364.
Kasamatsu, A; Kasai, K; Hikosaka, K; Matsui, T; Mimura, T (2004). "60nm gate-length Si/SiGe HEMT". Applied Surface Science. 224 (1): 382–385. Bibcode:2004ApSS..224..382K. doi:10.1016/j.apsusc.2003.08.064.
Ajayan, J.; Nirmal, D.; Mathew, Ribu; Kurian, Dheena; Mohankumar, P.; Arivazhagan, L.; Ajitha, D. (2021). "A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications". Materials Science in Semiconductor Processing. 128: 105753. doi:10.1016/j.mssp.2021.105753.
Hu, Zhixiang; Zhou, Licheng; Li, Long; Ying, Binzhou; Zhao, Yunong; Wang, Peng; Li, Huayao; Zhang, Yang; Liu, Huan (18 April 2023). "Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO2 Detection". Chemosensors. 11 (4): 252. doi:10.3390/chemosensors11040252. ISSN 2227-9040.

espacenet.com

worldwide.espacenet.com

US 4163237, Ray Dingle, Arthur Gossard and Horst Störmer, "High mobility multilayered heterojunction devices employing modulated doping"
US 4471366, Daniel Delagebeaudeuf and Tranc L. Nuyen, "Field effect transistor with high cut-off frequency and process for forming same" (Google Patents)

handle.net

hdl.handle.net

Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison (2021). "GaN-based power devices: Physics, reliability, and perspectives". Journal of Applied Physics. 130 (18): 181101. Bibcode:2021JAP...130r1101M. doi:10.1063/5.0061354. hdl:11380/1255364.

harvard.edu

ui.adsabs.harvard.edu

Chen, Kevin J.; Häberlen, Oliver; Lidow, Alex; Tsai, Chun lin; Ueda, Tetsuzo; Uemoto, Yasuhiro; Wu, Yifeng (2017). "GaN-on-Si Power Technology: Devices and Applications". IEEE Transactions on Electron Devices. 64 (3): 779–795. Bibcode:2017ITED...64..779C. doi:10.1109/TED.2017.2657579.
Mimura, Takashi (March 2002). "The early history of the high electron mobility transistor (HEMT)". IEEE Transactions on Microwave Theory and Techniques. 50 (3): 780–782. Bibcode:2002ITMTT..50..780M. doi:10.1109/22.989961.
Mimura, Takashi (8 December 2005). "Development of High Electron Mobility Transistor" (PDF). Japanese Journal of Applied Physics. 44 (12R): 8263–8268. Bibcode:2005JaJAP..44.8263M. doi:10.1143/JJAP.44.8263. ISSN 1347-4065. S2CID 3112776. Archived from the original (PDF) on 8 March 2019.
Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.; Olson, D. T. (1993). "High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction". Applied Physics Letters. 63 (9): 1214–1215. Bibcode:1993ApPhL..63.1214A. doi:10.1063/1.109775.
Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison (2021). "GaN-based power devices: Physics, reliability, and perspectives". Journal of Applied Physics. 130 (18): 181101. Bibcode:2021JAP...130r1101M. doi:10.1063/5.0061354. hdl:11380/1255364.
Kasamatsu, A; Kasai, K; Hikosaka, K; Matsui, T; Mimura, T (2004). "60nm gate-length Si/SiGe HEMT". Applied Surface Science. 224 (1): 382–385. Bibcode:2004ApSS..224..382K. doi:10.1016/j.apsusc.2003.08.064.

patents.google.com

US 4471366, Daniel Delagebeaudeuf and Tranc L. Nuyen, "Field effect transistor with high cut-off frequency and process for forming same" (Google Patents)

sciencedirect.com

Kasamatsu, A; Kasai, K; Hikosaka, K; Matsui, T; Mimura, T (2004). "60nm gate-length Si/SiGe HEMT". Applied Surface Science. 224 (1): 382–385. Bibcode:2004ApSS..224..382K. doi:10.1016/j.apsusc.2003.08.064.
Ajayan, J.; Nirmal, D.; Mathew, Ribu; Kurian, Dheena; Mohankumar, P.; Arivazhagan, L.; Ajitha, D. (2021). "A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications". Materials Science in Semiconductor Processing. 128: 105753. doi:10.1016/j.mssp.2021.105753.

scitation.org

aip.scitation.org

Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.; Olson, D. T. (1993). "High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction". Applied Physics Letters. 63 (9): 1214–1215. Bibcode:1993ApPhL..63.1214A. doi:10.1063/1.109775.

semanticscholar.org

api.semanticscholar.org

Mimura, Takashi (8 December 2005). "Development of High Electron Mobility Transistor" (PDF). Japanese Journal of Applied Physics. 44 (12R): 8263–8268. Bibcode:2005JaJAP..44.8263M. doi:10.1143/JJAP.44.8263. ISSN 1347-4065. S2CID 3112776. Archived from the original (PDF) on 8 March 2019.

pdfs.semanticscholar.org

Mimura, Takashi (8 December 2005). "Development of High Electron Mobility Transistor" (PDF). Japanese Journal of Applied Physics. 44 (12R): 8263–8268. Bibcode:2005JaJAP..44.8263M. doi:10.1143/JJAP.44.8263. ISSN 1347-4065. S2CID 3112776. Archived from the original (PDF) on 8 March 2019.

semiconductor-today.com

"Northrop Grumman sets record with terahertz IC amplifier". www.semiconductor-today.com.
"Indium Phosphide: Transcending frequency and integration limits. Semiconductor TODAY Compounds&AdvancedSilicon • Vol. 1 • Issue 3 • September 2006" (PDF).

web.archive.org

Mimura, Takashi (8 December 2005). "Development of High Electron Mobility Transistor" (PDF). Japanese Journal of Applied Physics. 44 (12R): 8263–8268. Bibcode:2005JaJAP..44.8263M. doi:10.1143/JJAP.44.8263. ISSN 1347-4065. S2CID 3112776. Archived from the original (PDF) on 8 March 2019.

worldcat.org

search.worldcat.org

Mimura, Takashi (8 December 2005). "Development of High Electron Mobility Transistor" (PDF). Japanese Journal of Applied Physics. 44 (12R): 8263–8268. Bibcode:2005JaJAP..44.8263M. doi:10.1143/JJAP.44.8263. ISSN 1347-4065. S2CID 3112776. Archived from the original (PDF) on 8 March 2019.
Ye, P. D.; Yang, B.; Ng, K. K.; Bude, J.; Wilk, G. D.; Halder, S.; Hwang, J. C. M. (1 September 2004). "GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al2O3 AS GATE DIELECTRIC AND SURFACE PASSIVATION". International Journal of High Speed Electronics and Systems. 14 (3): 791–796. doi:10.1142/S0129156404002843. ISSN 0129-1564.
Hu, Zhixiang; Zhou, Licheng; Li, Long; Ying, Binzhou; Zhao, Yunong; Wang, Peng; Li, Huayao; Zhang, Yang; Liu, Huan (18 April 2023). "Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO2 Detection". Chemosensors. 11 (4): 252. doi:10.3390/chemosensors11040252. ISSN 2227-9040.