Hydrogen-terminated silicon surface (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Hydrogen-terminated silicon surface" in English language version.

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  • Fenner, D. B.; Biegelsen, D. K.; Bringans, R. D. (1989). "Silicon surface passivation by hydrogen termination: A comparative study of preparation methods". Journal of Applied Physics. 66 (1): 419–424. Bibcode:1989JAP....66..419F. doi:10.1063/1.343839.
  • Lauerhaas, Jeffrey M.; Sailor, Michael J. (1993). "Chemical Modification of the Photoluminescence Quenching of Porous Silicon". Science. 261 (5128): 1567–1568. Bibcode:1993Sci...261.1567L. doi:10.1126/science.261.5128.1567. PMID 17798116. S2CID 12722221.
  • Waltenburg, Hanne Neergaard; Yates, John (1995). "Surface Chemistry of Silicon". Chem. Rev. 95 (5): 1589–1673. doi:10.1021/cr00037a600.
  • Neergaard Waltenburg, Hanne; Yates, John (July 1995). "Surface Chemistry of Silicon". Chemical Reviews. 95 (5): 1589–1673. doi:10.1021/cr00037a600. ISSN 0009-2665.
  • Labidi, Hatem; Koleini, Mohammad; Huff, Taleana; Salomons, Mark; Cloutier, Martin; Pitters, Jason; Wolkow, Robert A. (2017-02-13). "Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface". Nature Communications. 8: 14222. Bibcode:2017NatCo...814222L. doi:10.1038/ncomms14222. ISSN 2041-1723. PMC 5316802. PMID 28194036.
  • "Organic modification of hydrogen terminated silicon surfaces1". Journal of the Chemical Society, Perkin Transactions 2: 23–34. 2002. doi:10.1039/B100704L.
  • Blake, Robert B.; Pei, Lei; Yang, Li; Lee, Michael V.; Conley, Hiram J.; Davis, Robert C.; Shirahata, Naoto; Linford, Matthew R. (2008-04-18). "One-Step Growth of ca. 2–15 nm Polymer Thin Films on Hydrogen-Terminated Silicon". Macromolecular Rapid Communications. 29 (8): 638–644. doi:10.1002/marc.200700752. ISSN 1022-1336.
  • Shinohara, Masanori; Katagiri, Teruaki; Iwatsuji, Keitaro; Matsuda, Yoshinobu; Fujiyama, Hiroshi; Kimura, Yasuo; Niwano, Michio (March 2005). "Oxidation of the hydrogen terminated silicon surfaces by oxygen plasma investigated by in-situ infrared spectroscopy". Thin Solid Films. 475 (1–2): 128–132. Bibcode:2005TSF...475..128S. doi:10.1016/j.tsf.2004.08.054. ISSN 0040-6090.

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  • Fenner, D. B.; Biegelsen, D. K.; Bringans, R. D. (1989). "Silicon surface passivation by hydrogen termination: A comparative study of preparation methods". Journal of Applied Physics. 66 (1): 419–424. Bibcode:1989JAP....66..419F. doi:10.1063/1.343839.
  • Lauerhaas, Jeffrey M.; Sailor, Michael J. (1993). "Chemical Modification of the Photoluminescence Quenching of Porous Silicon". Science. 261 (5128): 1567–1568. Bibcode:1993Sci...261.1567L. doi:10.1126/science.261.5128.1567. PMID 17798116. S2CID 12722221.
  • Labidi, Hatem; Koleini, Mohammad; Huff, Taleana; Salomons, Mark; Cloutier, Martin; Pitters, Jason; Wolkow, Robert A. (2017-02-13). "Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface". Nature Communications. 8: 14222. Bibcode:2017NatCo...814222L. doi:10.1038/ncomms14222. ISSN 2041-1723. PMC 5316802. PMID 28194036.
  • Shinohara, Masanori; Katagiri, Teruaki; Iwatsuji, Keitaro; Matsuda, Yoshinobu; Fujiyama, Hiroshi; Kimura, Yasuo; Niwano, Michio (March 2005). "Oxidation of the hydrogen terminated silicon surfaces by oxygen plasma investigated by in-situ infrared spectroscopy". Thin Solid Films. 475 (1–2): 128–132. Bibcode:2005TSF...475..128S. doi:10.1016/j.tsf.2004.08.054. ISSN 0040-6090.

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