ISFET (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "ISFET" in English language version.

refsWebsite

Global rank English rank

10doi.org

2^nd place

6worldcat.org

5^th place

3nih.gov

4^th place

2harvard.edu

18^th place

17^th place

2semanticscholar.org

11^th place

8^th place

1core.ac.uk

1,734^th place

1,312^th place

1fz-juelich.de

low place

1acs.org

1,248^th place

1,104^th place

1researchgate.net

120^th place

125^th place

acs.org

pubs.acs.org

Chen, Xi; Chen, Si; Hu, Qitao; Zhang, Shi-Li; Solomon, Paul; Zhang, Zhen (2019-02-22). "Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate". ACS Sensors. 4 (2): 427–433. doi:10.1021/acssensors.8b01394. ISSN 2379-3694. PMID 30632733. S2CID 58624034.

core.ac.uk

Bergveld, Piet (October 1985). "The impact of MOSFET-based sensors" (PDF). Sensors and Actuators. 8 (2): 109–127. Bibcode:1985SeAc....8..109B. doi:10.1016/0250-6874(85)87009-8. ISSN 0250-6874.

doi.org

Bergveld, Piet (October 1985). "The impact of MOSFET-based sensors" (PDF). Sensors and Actuators. 8 (2): 109–127. Bibcode:1985SeAc....8..109B. doi:10.1016/0250-6874(85)87009-8. ISSN 0250-6874.
Schöning, Michael J.; Poghossian, Arshak (10 September 2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. ISSN 1364-5528. PMID 12375833.
Bedner, Kristine; Guzenko, Vitaliy A.; Tarasov, Alexey; Wipf, Mathias; Stoop, Ralph L.; Rigante, Sara; Brunner, Jan; Fu, Wangyang; David, Christian; Calame, Michel; Gobrecht, Jens (February 2014). "Investigation of the dominant 1/f noise source in silicon nanowire sensors". Sensors and Actuators B: Chemical. 191: 270–275. doi:10.1016/j.snb.2013.09.112. ISSN 0925-4005.
Zhang, Da; Gao, Xindong; Chen, Si; Norström, Hans; Smith, Ulf; Solomon, Paul; Zhang, Shi-Li; Zhang, Zhen (2014-08-25). "An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance". Applied Physics Letters. 105 (8): 082102. doi:10.1063/1.4894240. ISSN 0003-6951.
Chen, Xi; Chen, Si; Hu, Qitao; Zhang, Shi-Li; Solomon, Paul; Zhang, Zhen (2019-02-22). "Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate". ACS Sensors. 4 (2): 427–433. doi:10.1021/acssensors.8b01394. ISSN 2379-3694. PMID 30632733. S2CID 58624034.
Bergveld, P. (January 1970). "Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements". IEEE Transactions on Biomedical Engineering. BME-17 (1): 70–71. doi:10.1109/TBME.1970.4502688. PMID 5441220.
Chris Toumazou; Pantelis Georgiou (December 2011). "40 years of ISFET technology: From neuronal sensing to DNA sequencing". Electronics Letters. 47: S7. doi:10.1049/el.2011.3231. Retrieved 13 May 2016.
Park, Jeho; Nguyen, Hoang Hiep; Woubit, Abdela; Kim, Moonil (2014). "Applications of Field-Effect Transistor (FET)–Type Biosensors". Applied Science and Convergence Technology. 23 (2): 61–71. doi:10.5757/ASCT.2014.23.2.61. ISSN 2288-6559. S2CID 55557610.

dx.doi.org

Bedner, Kristine; Guzenko, Vitaliy A.; Tarasov, Alexey; Wipf, Mathias; Stoop, Ralph L.; Rigante, Sara; Brunner, Jan; Fu, Wangyang; David, Christian; Calame, Michel; Gobrecht, Jens (February 2014). "Investigation of the dominant 1/f noise source in silicon nanowire sensors". Sensors and Actuators B: Chemical. 191: 270–275. doi:10.1016/j.snb.2013.09.112. ISSN 0925-4005.
Zhang, Da; Gao, Xindong; Chen, Si; Norström, Hans; Smith, Ulf; Solomon, Paul; Zhang, Shi-Li; Zhang, Zhen (2014-08-25). "An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance". Applied Physics Letters. 105 (8): 082102. doi:10.1063/1.4894240. ISSN 0003-6951.

fz-juelich.de

juser.fz-juelich.de

Schöning, Michael J.; Poghossian, Arshak (10 September 2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. ISSN 1364-5528. PMID 12375833.

harvard.edu

ui.adsabs.harvard.edu

Bergveld, Piet (October 1985). "The impact of MOSFET-based sensors" (PDF). Sensors and Actuators. 8 (2): 109–127. Bibcode:1985SeAc....8..109B. doi:10.1016/0250-6874(85)87009-8. ISSN 0250-6874.
Schöning, Michael J.; Poghossian, Arshak (10 September 2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. ISSN 1364-5528. PMID 12375833.

nih.gov

pubmed.ncbi.nlm.nih.gov

Schöning, Michael J.; Poghossian, Arshak (10 September 2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. ISSN 1364-5528. PMID 12375833.
Chen, Xi; Chen, Si; Hu, Qitao; Zhang, Shi-Li; Solomon, Paul; Zhang, Zhen (2019-02-22). "Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate". ACS Sensors. 4 (2): 427–433. doi:10.1021/acssensors.8b01394. ISSN 2379-3694. PMID 30632733. S2CID 58624034.
Bergveld, P. (January 1970). "Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements". IEEE Transactions on Biomedical Engineering. BME-17 (1): 70–71. doi:10.1109/TBME.1970.4502688. PMID 5441220.

researchgate.net

Chris Toumazou; Pantelis Georgiou (December 2011). "40 years of ISFET technology: From neuronal sensing to DNA sequencing". Electronics Letters. 47: S7. doi:10.1049/el.2011.3231. Retrieved 13 May 2016.

semanticscholar.org

api.semanticscholar.org

Chen, Xi; Chen, Si; Hu, Qitao; Zhang, Shi-Li; Solomon, Paul; Zhang, Zhen (2019-02-22). "Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate". ACS Sensors. 4 (2): 427–433. doi:10.1021/acssensors.8b01394. ISSN 2379-3694. PMID 30632733. S2CID 58624034.
Park, Jeho; Nguyen, Hoang Hiep; Woubit, Abdela; Kim, Moonil (2014). "Applications of Field-Effect Transistor (FET)–Type Biosensors". Applied Science and Convergence Technology. 23 (2): 61–71. doi:10.5757/ASCT.2014.23.2.61. ISSN 2288-6559. S2CID 55557610.

worldcat.org

Bergveld, Piet (October 1985). "The impact of MOSFET-based sensors" (PDF). Sensors and Actuators. 8 (2): 109–127. Bibcode:1985SeAc....8..109B. doi:10.1016/0250-6874(85)87009-8. ISSN 0250-6874.
Schöning, Michael J.; Poghossian, Arshak (10 September 2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. ISSN 1364-5528. PMID 12375833.
Bedner, Kristine; Guzenko, Vitaliy A.; Tarasov, Alexey; Wipf, Mathias; Stoop, Ralph L.; Rigante, Sara; Brunner, Jan; Fu, Wangyang; David, Christian; Calame, Michel; Gobrecht, Jens (February 2014). "Investigation of the dominant 1/f noise source in silicon nanowire sensors". Sensors and Actuators B: Chemical. 191: 270–275. doi:10.1016/j.snb.2013.09.112. ISSN 0925-4005.
Zhang, Da; Gao, Xindong; Chen, Si; Norström, Hans; Smith, Ulf; Solomon, Paul; Zhang, Shi-Li; Zhang, Zhen (2014-08-25). "An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance". Applied Physics Letters. 105 (8): 082102. doi:10.1063/1.4894240. ISSN 0003-6951.
Chen, Xi; Chen, Si; Hu, Qitao; Zhang, Shi-Li; Solomon, Paul; Zhang, Zhen (2019-02-22). "Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate". ACS Sensors. 4 (2): 427–433. doi:10.1021/acssensors.8b01394. ISSN 2379-3694. PMID 30632733. S2CID 58624034.
Park, Jeho; Nguyen, Hoang Hiep; Woubit, Abdela; Kim, Moonil (2014). "Applications of Field-Effect Transistor (FET)–Type Biosensors". Applied Science and Convergence Technology. 23 (2): 61–71. doi:10.5757/ASCT.2014.23.2.61. ISSN 2288-6559. S2CID 55557610.