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Indium gallium aluminium nitride (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Indium gallium aluminium nitride" in English language version.

refsWebsite
Global rank English rank
2doi.org
2nd place
2nd place
1iop.org
1,725th place
1,828th place
1worldcat.org
5th place
5th place
1spiedigitallibrary.org
low place
low place

doi.org (Global: 2nd place; English: 2nd place)

  • Chen, Zhen; Yan, Shuke; Danesh, Cameron (2021-03-25). "MicroLED technologies and applications: characteristics, fabrication, progress, and challenges". Journal of Physics D: Applied Physics. 54 (12): 123001. doi:10.1088/1361-6463/abcfe4. ISSN 0022-3727.
  • Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Kafar, A.; Stanczyk, S.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G. (2013-05-23). Dubinskii, Mark; Post, Stephen G. (eds.). "Advances in AlGaInN laser diode technology for defence applications": 873302. doi:10.1117/12.2014753. {{cite journal}}: Cite journal requires |journal= (help)

iop.org (Global: 1,725th place; English: 1,828th place)

iopscience.iop.org

  • Chen, Zhen; Yan, Shuke; Danesh, Cameron (2021-03-25). "MicroLED technologies and applications: characteristics, fabrication, progress, and challenges". Journal of Physics D: Applied Physics. 54 (12): 123001. doi:10.1088/1361-6463/abcfe4. ISSN 0022-3727.

spiedigitallibrary.org (Global: low place; English: low place)

worldcat.org (Global: 5th place; English: 5th place)

search.worldcat.org

  • Chen, Zhen; Yan, Shuke; Danesh, Cameron (2021-03-25). "MicroLED technologies and applications: characteristics, fabrication, progress, and challenges". Journal of Physics D: Applied Physics. 54 (12): 123001. doi:10.1088/1361-6463/abcfe4. ISSN 0022-3727.