Baliga, B.J.; Adler, M.S.; Gray, P.V.; Love, R.P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices Meeting. pp. 264–267. doi:10.1109/IEDM.1982.190269. S2CID40672805.
Nakagawa, Akio; Ohashi, Hiromichi; Tsukakoshi, Tsuneo (1984). "High Voltage Bipolar-Mode MOSFET with High Current Capability". Extended Abstracts of the 1984 International Conference on Solid State Devices and Materials. doi:10.7567/SSDM.1984.B-6-2.
Scharf, B.; Plummer, J. (1978). A MOS-controlled triac device. 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. Vol. XXI. pp. 222–223. doi:10.1109/ISSCC.1978.1155837. S2CID11665546.
Nakagawa, A.; Ohashi, H.; Kurata, M.; Yamaguchi, H.; Watanabe, K. (1984). "Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO". 1984 International Electron Devices Meeting. pp. 860–861. doi:10.1109/IEDM.1984.190866. S2CID12136665.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H.; Kurata, M. (1985). "Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics". 1985 International Electron Devices Meeting. pp. 150–153. doi:10.1109/IEDM.1985.190916. S2CID24346402.
Goodman, A.M.; Russell, J.P.; Goodman, L.A.; Nuese, C.J.; Neilson, J.M. (1983). "Improved COMFETs with fast switching speed and high-current capability". 1983 International Electron Devices Meeting. pp. 79–82. doi:10.1109/IEDM.1983.190445. S2CID2210870.
Scharf, B.; Plummer, J. (1978). "A MOS-controlled triac device". 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. pp. 222–223. doi:10.1109/ISSCC.1978.1155837. S2CID11665546.
Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator". IEEE Transactions on Power Electronics. 9 (5): 532–542. Bibcode:1994ITPE....9..532H. doi:10.1109/63.321038. S2CID53487037.
Baliga, B.J.; Adler, M.S.; Gray, P.V.; Love, R.P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices Meeting. pp. 264–267. doi:10.1109/IEDM.1982.190269. S2CID40672805.
Scharf, B.; Plummer, J. (1978). A MOS-controlled triac device. 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. Vol. XXI. pp. 222–223. doi:10.1109/ISSCC.1978.1155837. S2CID11665546.
Nakagawa, A.; Ohashi, H.; Kurata, M.; Yamaguchi, H.; Watanabe, K. (1984). "Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO". 1984 International Electron Devices Meeting. pp. 860–861. doi:10.1109/IEDM.1984.190866. S2CID12136665.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H.; Kurata, M. (1985). "Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics". 1985 International Electron Devices Meeting. pp. 150–153. doi:10.1109/IEDM.1985.190916. S2CID24346402.
Goodman, A.M.; Russell, J.P.; Goodman, L.A.; Nuese, C.J.; Neilson, J.M. (1983). "Improved COMFETs with fast switching speed and high-current capability". 1983 International Electron Devices Meeting. pp. 79–82. doi:10.1109/IEDM.1983.190445. S2CID2210870.
Scharf, B.; Plummer, J. (1978). "A MOS-controlled triac device". 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. pp. 222–223. doi:10.1109/ISSCC.1978.1155837. S2CID11665546.
Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator". IEEE Transactions on Power Electronics. 9 (5): 532–542. Bibcode:1994ITPE....9..532H. doi:10.1109/63.321038. S2CID53487037.