Insulated-gate bipolar transistor (English Wikipedia)

G.c, Mahato; Niranjan; Abu, Waquar Aarif (2018-04-24). "Analysis on IGBT Developments". International Journal of Engineering Research & Technology. 4 (2). doi:10.17577/IJERTCONV4IS02018 (inactive 1 November 2024). ISSN 2278-0181.{{cite journal}}: CS1 maint: DOI inactive as of November 2024 (link)
Shao, Lingfeng; Hu, Yi; Xu, Guoqing (2020). "A High Precision On-Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm". IEEE Access. 8: 186172–186180. Bibcode:2020IEEEA...8r6172S. doi:10.1109/ACCESS.2020.3028904. ISSN 2169-3536.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Scharf, B.; Plummer, J. (1978). "A MOS-controlled triac device". 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. pp. 222–223. doi:10.1109/ISSCC.1978.1155837. S2CID 11665546.
Nakagawa, A.; Ohashi, H.; Kurata, M.; Yamaguchi, H.; Watanabe, K. (1984). "Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO". 1984 International Electron Devices Meeting. pp. 860–861. doi:10.1109/IEDM.1984.190866. S2CID 12136665.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H. (1987). "Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's". IEEE Transactions on Electron Devices. 34 (2): 351–355. Bibcode:1987ITED...34..351N. doi:10.1109/T-ED.1987.22929. S2CID 25472355.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H.; Kurata, M. (1985). "Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics". 1985 International Electron Devices Meeting. pp. 150–153. doi:10.1109/IEDM.1985.190916. S2CID 24346402.
Baliga, B.J.; Adler, M. S.; Gray, P. V.; Love, R. P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices Meeting. pp. 264–267. doi:10.1109/IEDM.1982.190269. S2CID 40672805.
Shenai, K. (2015). "The Invention and Demonstration of the IGBT [A Look Back]". IEEE Power Electronics Magazine. 2 (2): 12–16. doi:10.1109/MPEL.2015.2421751. ISSN 2329-9207. S2CID 37855728.
Russell, J.P.; Goodman, A. M.; Goodman, L.A.; Neilson, J. M. (1983). "The COMFET—A new high conductance MOS-gated device". IEEE Electron Device Letters. 4 (3): 63–65. Bibcode:1983IEDL....4...63R. doi:10.1109/EDL.1983.25649. S2CID 37850113.
Baliga, B.J. (1983). "Fast-switching insulated gate transistors". IEEE Electron Device Letters. 4 (12): 452–454. Bibcode:1983IEDL....4..452B. doi:10.1109/EDL.1983.25799. S2CID 40454892.
Goodman, A.M.; Russell, J. P.; Goodman, L. A.; Nuese, C. J.; Neilson, J. M. (1983). "Improved COMFETs with fast switching speed and high-current capability". 1983 International Electron Devices Meeting. pp. 79–82. doi:10.1109/IEDM.1983.190445. S2CID 2210870.
Baliga, B. Jayant (1985). "Temperature behavior of insulated gate transistor characteristics". Solid-State Electronics. 28 (3): 289–297. Bibcode:1985SSEle..28..289B. doi:10.1016/0038-1101(85)90009-7.
Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator". IEEE Transactions on Power Electronics. 9 (5): 532–542. Bibcode:1994ITPE....9..532H. doi:10.1109/63.321038. S2CID 53487037.
Patil, N.; Celaya, J.; Das, D.; Goebel, K.; Pecht, M. (June 2009). "Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics". IEEE Transactions on Reliability. 58 (2): 271–276. doi:10.1109/TR.2009.2020134. S2CID 206772637.

electronics-tutorials.ws

Basic Electronics Tutorials.

fc2.com

archive1982.web.fc2.com

Marvin W. Smith, "APPLICATIONS OF INSULATED GATE TRANSISTORS", PCI April 1984 PROCEEDINGS, pp. 121–131, 1984.

harvard.edu

ui.adsabs.harvard.edu

Shao, Lingfeng; Hu, Yi; Xu, Guoqing (2020). "A High Precision On-Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm". IEEE Access. 8: 186172–186180. Bibcode:2020IEEEA...8r6172S. doi:10.1109/ACCESS.2020.3028904. ISSN 2169-3536.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H. (1987). "Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's". IEEE Transactions on Electron Devices. 34 (2): 351–355. Bibcode:1987ITED...34..351N. doi:10.1109/T-ED.1987.22929. S2CID 25472355.
Russell, J.P.; Goodman, A. M.; Goodman, L.A.; Neilson, J. M. (1983). "The COMFET—A new high conductance MOS-gated device". IEEE Electron Device Letters. 4 (3): 63–65. Bibcode:1983IEDL....4...63R. doi:10.1109/EDL.1983.25649. S2CID 37850113.
Baliga, B.J. (1983). "Fast-switching insulated gate transistors". IEEE Electron Device Letters. 4 (12): 452–454. Bibcode:1983IEDL....4..452B. doi:10.1109/EDL.1983.25799. S2CID 40454892.
Baliga, B. Jayant (1985). "Temperature behavior of insulated gate transistor characteristics". Solid-State Electronics. 28 (3): 289–297. Bibcode:1985SSEle..28..289B. doi:10.1016/0038-1101(85)90009-7.
Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator". IEEE Transactions on Power Electronics. 9 (5): 532–542. Bibcode:1994ITPE....9..532H. doi:10.1109/63.321038. S2CID 53487037.

icinsights.com

"Power Transistor Market Will Cross $13.0 Billion in 2011". IC Insights. June 21, 2011. Retrieved 15 October 2019.

ijert.org

G.c, Mahato; Niranjan; Abu, Waquar Aarif (2018-04-24). "Analysis on IGBT Developments". International Journal of Engineering Research & Technology. 4 (2). doi:10.17577/IJERTCONV4IS02018 (inactive 1 November 2024). ISSN 2278-0181.{{cite journal}}: CS1 maint: DOI inactive as of November 2024 (link)

invent.org

"NIHF Inductee Bantval Jayant Baliga Invented IGBT Technology". National Inventors Hall of Fame. Retrieved 17 August 2019.

iop.org

iopscience.iop.org

Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.

jedec.org

"insulated-gate bipolar transistor (IGBT) | JEDEC". www.jedec.org. Retrieved 2024-08-20.

nainasemi.com

"IGBT Module". Naina Semi. Retrieved 17 January 2025.

nevsemi.com

Difference Between IGBT and Thyristor.

onsemi.com

https://www.onsemi.com/pub/Collateral/HBD871-D.PDF ^{[bare URL PDF]}

patents.google.com

USRE33209E, Plummer, James D., "Monolithic semiconductor switching device", issued 1990-05-01
U. S. Patent No. 4,364,073, Power MOSFET with an Anode Region, issued December 14, 1982 to Hans W. Becke and Carl F. Wheatley.
A. Nakagawa, H. Ohashi, Y. Yamaguchi, K. Watanabe and T. Thukakoshi, "Conductivity modulated MOSFET" US Patent No. 6025622 (Feb. 15, 2000), No. 5086323 (Feb. 4, 1992) and No. 4672407 (Jun. 9, 1987).
A. Nakagawa, H. Ohashi, Y. Yamaguchi, K. Watanabe and T. Thukakoshi, "Conductivity modulated MOSFET", US Patent No. 6025622 (Feb. 15, 2000), No. 5086323 (Feb. 4, 1992) and No. 4672407 (Jun. 9, 1987).

rohm.com

techweb.rohm.com

"IGBT Structure | About IGBTs | TechWeb". techweb.rohm.com. Retrieved 2024-08-20.

semanticscholar.org

api.semanticscholar.org

Scharf, B.; Plummer, J. (1978). "A MOS-controlled triac device". 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. pp. 222–223. doi:10.1109/ISSCC.1978.1155837. S2CID 11665546.
Nakagawa, A.; Ohashi, H.; Kurata, M.; Yamaguchi, H.; Watanabe, K. (1984). "Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO". 1984 International Electron Devices Meeting. pp. 860–861. doi:10.1109/IEDM.1984.190866. S2CID 12136665.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H. (1987). "Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's". IEEE Transactions on Electron Devices. 34 (2): 351–355. Bibcode:1987ITED...34..351N. doi:10.1109/T-ED.1987.22929. S2CID 25472355.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H.; Kurata, M. (1985). "Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics". 1985 International Electron Devices Meeting. pp. 150–153. doi:10.1109/IEDM.1985.190916. S2CID 24346402.
Baliga, B.J.; Adler, M. S.; Gray, P. V.; Love, R. P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices Meeting. pp. 264–267. doi:10.1109/IEDM.1982.190269. S2CID 40672805.
Shenai, K. (2015). "The Invention and Demonstration of the IGBT [A Look Back]". IEEE Power Electronics Magazine. 2 (2): 12–16. doi:10.1109/MPEL.2015.2421751. ISSN 2329-9207. S2CID 37855728.
Russell, J.P.; Goodman, A. M.; Goodman, L.A.; Neilson, J. M. (1983). "The COMFET—A new high conductance MOS-gated device". IEEE Electron Device Letters. 4 (3): 63–65. Bibcode:1983IEDL....4...63R. doi:10.1109/EDL.1983.25649. S2CID 37850113.
Baliga, B.J. (1983). "Fast-switching insulated gate transistors". IEEE Electron Device Letters. 4 (12): 452–454. Bibcode:1983IEDL....4..452B. doi:10.1109/EDL.1983.25799. S2CID 40454892.
Goodman, A.M.; Russell, J. P.; Goodman, L. A.; Nuese, C. J.; Neilson, J. M. (1983). "Improved COMFETs with fast switching speed and high-current capability". 1983 International Electron Devices Meeting. pp. 79–82. doi:10.1109/IEDM.1983.190445. S2CID 2210870.
Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator". IEEE Transactions on Power Electronics. 9 (5): 532–542. Bibcode:1994ITPE....9..532H. doi:10.1109/63.321038. S2CID 53487037.
Patil, N.; Celaya, J.; Das, D.; Goebel, K.; Pecht, M. (June 2009). "Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics". IEEE Transactions on Reliability. 58 (2): 271–276. doi:10.1109/TR.2009.2020134. S2CID 206772637.

umd.edu

eng.umd.edu

"C. Frank Wheatley, Jr., BSEE". Innovation Hall of Fame at A. James Clark School of Engineering.

umn.edu

license.umn.edu

"Ion Gel as a Gate Insulator in Field Effect Transistors". Archived from the original on 2011-11-14.

web.archive.org

"Ion Gel as a Gate Insulator in Field Effect Transistors". Archived from the original on 2011-11-14.

worldcat.org

search.worldcat.org

G.c, Mahato; Niranjan; Abu, Waquar Aarif (2018-04-24). "Analysis on IGBT Developments". International Journal of Engineering Research & Technology. 4 (2). doi:10.17577/IJERTCONV4IS02018 (inactive 1 November 2024). ISSN 2278-0181.{{cite journal}}: CS1 maint: DOI inactive as of November 2024 (link)
Shao, Lingfeng; Hu, Yi; Xu, Guoqing (2020). "A High Precision On-Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm". IEEE Access. 8: 186172–186180. Bibcode:2020IEEEA...8r6172S. doi:10.1109/ACCESS.2020.3028904. ISSN 2169-3536.
Shenai, K. (2015). "The Invention and Demonstration of the IGBT [A Look Back]". IEEE Power Electronics Magazine. 2 (2): 12–16. doi:10.1109/MPEL.2015.2421751. ISSN 2329-9207. S2CID 37855728.