Insulated-gate bipolar transistor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Insulated-gate bipolar transistor" in English language version.

refsWebsite

Global rank English rank

16doi.org

2^nd place

11semanticscholar.org

11^th place

8^th place

7harvard.edu

18^th place

17^th place

4patents.google.com

1,182^nd place

725^th place

2worldcat.org

5^th place

2computerhistory.org

2,213^th place

1,495^th place

2books.google.com

3^rd place

1onsemi.com

low place

1jedec.org

low place

7,755^th place

1rohm.com

low place

1electronics-tutorials.ws

low place

1nevsemi.com

low place

1umd.edu

1,747^th place

1,277^th place

1invent.org

8,673^rd place

5,941^st place

1fc2.com

1,902^nd place

4,585^th place

1web.archive.org

1^st place

1umn.edu

1,266^th place

860^th place

1icinsights.com

low place

1ieee.org

652^nd place

515^th place

books.google.com

Majumdar, Gourab; Takata, Ikunori (2018). Power Devices for Efficient Energy Conversion. CRC Press. pp. 144, 284, 318. ISBN 9781351262316.
Baliga, B. Jayant (2015). The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor. William Andrew. pp. xxviii, 5–12. ISBN 9781455731534.

computerhistory.org

"1947: Invention of the Point-Contact Transistor". Computer History Museum. Retrieved August 10, 2016.
"1948: Conception of the Junction Transistor". Computer History Museum. Retrieved August 10, 2016.

doi.org

Shao, Lingfeng; Hu, Yi; Xu, Guoqing (2020). "A High Precision On-Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm". IEEE Access. 8: 186172–186180. Bibcode:2020IEEEA...8r6172S. doi:10.1109/ACCESS.2020.3028904. ISSN 2169-3536.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite journal}}: ISBN / Date incompatibility (help)
Scharf, B.; Plummer, J. (1978). "A MOS-controlled triac device". 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. pp. 222–223. doi:10.1109/ISSCC.1978.1155837. S2CID 11665546.
Nakagawa, A.; Ohashi, H.; Kurata, M.; Yamaguchi, H.; Watanabe, K. (1984). "Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO". 1984 International Electron Devices Meeting. pp. 860–861. doi:10.1109/IEDM.1984.190866. S2CID 12136665.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H. (1987). "Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's". IEEE Transactions on Electron Devices. 34 (2): 351–355. Bibcode:1987ITED...34..351N. doi:10.1109/T-ED.1987.22929. S2CID 25472355.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H.; Kurata, M. (1985). "Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics". 1985 International Electron Devices Meeting. pp. 150–153. doi:10.1109/IEDM.1985.190916. S2CID 24346402.
Baliga, B.J.; Adler, M. S.; Gray, P. V.; Love, R. P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices Meeting. pp. 264–267. doi:10.1109/IEDM.1982.190269. S2CID 40672805.
Shenai, K. (2015). "The Invention and Demonstration of the IGBT [A Look Back]". IEEE Power Electronics Magazine. 2 (2): 12–16. doi:10.1109/MPEL.2015.2421751. ISSN 2329-9207. S2CID 37855728.
Russell, J.P.; Goodman, A. M.; Goodman, L.A.; Neilson, J. M. (1983). "The COMFET—A new high conductance MOS-gated device". IEEE Electron Device Letters. 4 (3): 63–65. Bibcode:1983IEDL....4...63R. doi:10.1109/EDL.1983.25649. S2CID 37850113.
Baliga, B.J. (1983). "Fast-switching insulated gate transistors". IEEE Electron Device Letters. 4 (12): 452–454. Bibcode:1983IEDL....4..452B. doi:10.1109/EDL.1983.25799. S2CID 40454892.
Goodman, A.M.; Russell, J. P.; Goodman, L. A.; Nuese, C. J.; Neilson, J. M. (1983). "Improved COMFETs with fast switching speed and high-current capability". 1983 International Electron Devices Meeting. pp. 79–82. doi:10.1109/IEDM.1983.190445. S2CID 2210870.
Baliga, B. Jayant (1985). "Temperature behavior of insulated gate transistor characteristics". Solid-State Electronics. 28 (3): 289–297. Bibcode:1985SSEle..28..289B. doi:10.1016/0038-1101(85)90009-7.
Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator". IEEE Transactions on Power Electronics. 9 (5): 532–542. Bibcode:1994ITPE....9..532H. doi:10.1109/63.321038. S2CID 53487037.
Patil, N.; Celaya, J.; Das, D.; Goebel, K.; Pecht, M. (June 2009). "Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics". IEEE Transactions on Reliability. 58 (2): 271–276. doi:10.1109/TR.2009.2020134. S2CID 206772637.
Ghrabli, Mehdi; Bouarroudj, Mounira; Chamoin, Ludovic; Aldea, Emanuel (2024). Hybrid modeling for remaining useful life prediction in power module prognosis. 2024 25th International Conference on Thermal Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). Catania, Italy: IEEE. doi:10.1109/EuroSimE60745.2024.10491493.
Ghrabli, Mehdi; Bouarroudj, Mounira; Chamoin, Ludovic; Aldea, Emanuel (2025). "Physics-informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules". Microelectronics Reliability. 167: 1–12. Bibcode:2025MiRe..16715644G. doi:10.1016/j.microrel.2025.115644.

electronics-tutorials.ws

Basic Electronics Tutorials.

fc2.com

archive1982.web.fc2.com

Marvin W. Smith, "APPLICATIONS OF INSULATED GATE TRANSISTORS", PCI April 1984 PROCEEDINGS, pp. 121–131, 1984.

harvard.edu

ui.adsabs.harvard.edu

Shao, Lingfeng; Hu, Yi; Xu, Guoqing (2020). "A High Precision On-Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm". IEEE Access. 8: 186172–186180. Bibcode:2020IEEEA...8r6172S. doi:10.1109/ACCESS.2020.3028904. ISSN 2169-3536.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H. (1987). "Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's". IEEE Transactions on Electron Devices. 34 (2): 351–355. Bibcode:1987ITED...34..351N. doi:10.1109/T-ED.1987.22929. S2CID 25472355.
Russell, J.P.; Goodman, A. M.; Goodman, L.A.; Neilson, J. M. (1983). "The COMFET—A new high conductance MOS-gated device". IEEE Electron Device Letters. 4 (3): 63–65. Bibcode:1983IEDL....4...63R. doi:10.1109/EDL.1983.25649. S2CID 37850113.
Baliga, B.J. (1983). "Fast-switching insulated gate transistors". IEEE Electron Device Letters. 4 (12): 452–454. Bibcode:1983IEDL....4..452B. doi:10.1109/EDL.1983.25799. S2CID 40454892.
Baliga, B. Jayant (1985). "Temperature behavior of insulated gate transistor characteristics". Solid-State Electronics. 28 (3): 289–297. Bibcode:1985SSEle..28..289B. doi:10.1016/0038-1101(85)90009-7.
Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator". IEEE Transactions on Power Electronics. 9 (5): 532–542. Bibcode:1994ITPE....9..532H. doi:10.1109/63.321038. S2CID 53487037.
Ghrabli, Mehdi; Bouarroudj, Mounira; Chamoin, Ludovic; Aldea, Emanuel (2025). "Physics-informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules". Microelectronics Reliability. 167: 1–12. Bibcode:2025MiRe..16715644G. doi:10.1016/j.microrel.2025.115644.

icinsights.com

"Power Transistor Market Will Cross $13.0 Billion in 2011". IC Insights. June 21, 2011. Retrieved 15 October 2019.

ieee.org

ieeexplore.ieee.org

Ghrabli, Mehdi; Bouarroudj, Mounira; Chamoin, Ludovic; Aldea, Emanuel (2024). Hybrid modeling for remaining useful life prediction in power module prognosis. 2024 25th International Conference on Thermal Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). Catania, Italy: IEEE. doi:10.1109/EuroSimE60745.2024.10491493.

invent.org

"NIHF Inductee Bantval Jayant Baliga Invented IGBT Technology". National Inventors Hall of Fame. Retrieved 17 August 2019.

jedec.org

"insulated-gate bipolar transistor (IGBT) | JEDEC". www.jedec.org. Retrieved 2024-08-20.

nevsemi.com

Difference Between IGBT and Thyristor.

onsemi.com

IGBT Applications Handbook (PDF). ON Semiconductor. April 2014.

patents.google.com

USRE33209E, Plummer, James D., "Monolithic semiconductor switching device", issued 1990-05-01
U. S. Patent No. 4,364,073, Power MOSFET with an Anode Region, issued December 14, 1982 to Hans W. Becke and Carl F. Wheatley.
A. Nakagawa, H. Ohashi, Y. Yamaguchi, K. Watanabe and T. Thukakoshi, "Conductivity modulated MOSFET" US Patent No. 6025622 (Feb. 15, 2000), No. 5086323 (Feb. 4, 1992) and No. 4672407 (Jun. 9, 1987).
A. Nakagawa, H. Ohashi, Y. Yamaguchi, K. Watanabe and T. Thukakoshi, "Conductivity modulated MOSFET", US Patent No. 6025622 (Feb. 15, 2000), No. 5086323 (Feb. 4, 1992) and No. 4672407 (Jun. 9, 1987).

rohm.com

techweb.rohm.com

"IGBT Structure | About IGBTs | TechWeb". techweb.rohm.com. Retrieved 2024-08-20.

semanticscholar.org

api.semanticscholar.org

Scharf, B.; Plummer, J. (1978). "A MOS-controlled triac device". 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. pp. 222–223. doi:10.1109/ISSCC.1978.1155837. S2CID 11665546.
Nakagawa, A.; Ohashi, H.; Kurata, M.; Yamaguchi, H.; Watanabe, K. (1984). "Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO". 1984 International Electron Devices Meeting. pp. 860–861. doi:10.1109/IEDM.1984.190866. S2CID 12136665.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H. (1987). "Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's". IEEE Transactions on Electron Devices. 34 (2): 351–355. Bibcode:1987ITED...34..351N. doi:10.1109/T-ED.1987.22929. S2CID 25472355.
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H.; Kurata, M. (1985). "Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics". 1985 International Electron Devices Meeting. pp. 150–153. doi:10.1109/IEDM.1985.190916. S2CID 24346402.
Baliga, B.J.; Adler, M. S.; Gray, P. V.; Love, R. P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices Meeting. pp. 264–267. doi:10.1109/IEDM.1982.190269. S2CID 40672805.
Shenai, K. (2015). "The Invention and Demonstration of the IGBT [A Look Back]". IEEE Power Electronics Magazine. 2 (2): 12–16. doi:10.1109/MPEL.2015.2421751. ISSN 2329-9207. S2CID 37855728.
Russell, J.P.; Goodman, A. M.; Goodman, L.A.; Neilson, J. M. (1983). "The COMFET—A new high conductance MOS-gated device". IEEE Electron Device Letters. 4 (3): 63–65. Bibcode:1983IEDL....4...63R. doi:10.1109/EDL.1983.25649. S2CID 37850113.
Baliga, B.J. (1983). "Fast-switching insulated gate transistors". IEEE Electron Device Letters. 4 (12): 452–454. Bibcode:1983IEDL....4..452B. doi:10.1109/EDL.1983.25799. S2CID 40454892.
Goodman, A.M.; Russell, J. P.; Goodman, L. A.; Nuese, C. J.; Neilson, J. M. (1983). "Improved COMFETs with fast switching speed and high-current capability". 1983 International Electron Devices Meeting. pp. 79–82. doi:10.1109/IEDM.1983.190445. S2CID 2210870.
Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator". IEEE Transactions on Power Electronics. 9 (5): 532–542. Bibcode:1994ITPE....9..532H. doi:10.1109/63.321038. S2CID 53487037.
Patil, N.; Celaya, J.; Das, D.; Goebel, K.; Pecht, M. (June 2009). "Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics". IEEE Transactions on Reliability. 58 (2): 271–276. doi:10.1109/TR.2009.2020134. S2CID 206772637.

umd.edu

eng.umd.edu

"C. Frank Wheatley, Jr., BSEE". Innovation Hall of Fame at A. James Clark School of Engineering.

umn.edu

license.umn.edu

"Ion Gel as a Gate Insulator in Field Effect Transistors". Archived from the original on 2011-11-14.

web.archive.org

"Ion Gel as a Gate Insulator in Field Effect Transistors". Archived from the original on 2011-11-14.

worldcat.org

search.worldcat.org

Shao, Lingfeng; Hu, Yi; Xu, Guoqing (2020). "A High Precision On-Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm". IEEE Access. 8: 186172–186180. Bibcode:2020IEEEA...8r6172S. doi:10.1109/ACCESS.2020.3028904. ISSN 2169-3536.
Shenai, K. (2015). "The Invention and Demonstration of the IGBT [A Look Back]". IEEE Power Electronics Magazine. 2 (2): 12–16. doi:10.1109/MPEL.2015.2421751. ISSN 2329-9207. S2CID 37855728.