Isamu Akasaki (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Isamu Akasaki" in English language version.

refsWebsite

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17web.archive.org

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11doi.org

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10harvard.edu

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10worldcat.org

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6semanticscholar.org

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3ieee.org

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3cao.go.jp

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2inamori-f.or.jp

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2archive.today

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2kyoto-u.ac.jp

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1nobelprize.org

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1pref.aichi.jp

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1nii.ac.jp

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1iocg.org

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1electrochem.org

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1takeda-foundation.jp

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1interacademies.net

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1jst.go.jp

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1indiatimes.com

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1unesco.org

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archive.today

"Assistance to the Fujiwara Foundation of Science(Nippon Paper Industries Co., LTD.) | Nippon Paper Group". Archived from the original on April 11, 2013. Retrieved March 1, 2013.
"Novelist, LED developer awarded". Archived from the original on April 11, 2013. Retrieved March 1, 2013.

asahi.com

The Asahi Shimbun Company. "The Asahi Shimbun Company - The Asahi Prize - English Information". Asahi.com. Retrieved November 10, 2015.

britannica.com

"Akasaki Isamu". Encyclopedia Britannica. Retrieved 7 April 2021.

cao.go.jp

www8.cao.go.jp

"Types of Medals". cao.go.jp.
"Orders of the Rising Sun". Cao.go.jp. Retrieved November 10, 2015.
"Order of Culture". Cao.go.jp. Retrieved November 10, 2015.

chunichi.co.jp

"中日文化賞". 中日新聞 CHUNICHI Web.

doi.org

Isamu Akasaki; Hiroshi Amano (2006). "Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode". Japanese Journal of Applied Physics. 45 (12): 9001–9010. Bibcode:2006JaJAP..45.9001A. doi:10.1143/JJAP.45.9001. S2CID 7702696. Archived from the original on July 22, 2012. Retrieved November 10, 2015.
Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (December 20, 1989). "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)". Japanese Journal of Applied Physics. 28 (Part 2, No. 12). Japan Society of Applied Physics: L2112 – L2114. Bibcode:1989JaJAP..28L2112A. doi:10.1143/jjap.28.l2112. ISSN 0021-4922.
Isamu Akasaki; Hiroshi Amano; Masahiro Kito; Kazumasa Hiramatsu (1991). "Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED". Journal of Luminescence. 48–49. Elsevier BV: 666–670. Bibcode:1991JLum...48..666A. doi:10.1016/0022-2313(91)90215-h. ISSN 0022-2313.
Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (February 3, 1986). "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer". Applied Physics Letters. 48 (5). AIP Publishing: 353–355. Bibcode:1986ApPhL..48..353A. doi:10.1063/1.96549. ISSN 0003-6951.
Akasaki, Isamu; Amano, Hiroshi; Koide, Yasuo; Hiramatsu, Kazumasa; Sawaki, Nobuhiko (1989). "Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga_1−xAl_xN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE". Journal of Crystal Growth. 98 (1–2). Elsevier BV: 209–219. doi:10.1016/0022-0248(89)90200-5. ISSN 0022-0248.
Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). "Growth of Si-doped Al_xGa_1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy". Journal of Crystal Growth. 115 (1–4). Elsevier BV: 648–651. Bibcode:1991JCrGr.115..648M. doi:10.1016/0022-0248(91)90820-u. ISSN 0022-0248.
Amano, Hiroshi; Asahi, Tsunemori; Akasaki, Isamu (February 20, 1990). "Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer". Japanese Journal of Applied Physics. 29 (Part 2, No. 2). Japan Society of Applied Physics: L205 – L206. Bibcode:1990JaJAP..29L.205A. doi:10.1143/jjap.29.l205. ISSN 0021-4922. S2CID 120489784.
Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (November 1, 1995). "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device". Japanese Journal of Applied Physics. 34 (11B). Japan Society of Applied Physics: L1517–L1519. Bibcode:1995JaJAP..34L1517A. doi:10.7567/jjap.34.l1517. ISSN 0021-4922. S2CID 122963134.
Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (September 15, 1991). "Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures". Japanese Journal of Applied Physics. 30 (Part 1, No. 9A). Japan Society of Applied Physics: 1924–1927. Bibcode:1991JaJAP..30.1924I. doi:10.1143/jjap.30.1924. ISSN 0021-4922. S2CID 123428785.
Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki; Komori, Miho; Takeuchi, Hideo; Amano, Hiroshi; Akasaki, Isamu (April 1, 1997). "Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells". Japanese Journal of Applied Physics. 36 (Part 2, No. 4A). Japan Society of Applied Physics: L382 – L385. Bibcode:1997JaJAP..36L.382T. doi:10.1143/jjap.36.l382. ISSN 0021-4922. S2CID 95930600.
Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu (February 15, 2000). "Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells". Japanese Journal of Applied Physics. 39 (Part 1, No. 2A). Japan Society of Applied Physics: 413–416. Bibcode:2000JaJAP..39..413T. doi:10.1143/jjap.39.413. ISSN 0021-4922. S2CID 121954273.

electrochem.org

"ECS SSS&T Award". Electrochem.org. Archived from the original on October 12, 2014. Retrieved November 10, 2015.

harvard.edu

ui.adsabs.harvard.edu

Isamu Akasaki; Hiroshi Amano (2006). "Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode". Japanese Journal of Applied Physics. 45 (12): 9001–9010. Bibcode:2006JaJAP..45.9001A. doi:10.1143/JJAP.45.9001. S2CID 7702696. Archived from the original on July 22, 2012. Retrieved November 10, 2015.
Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (December 20, 1989). "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)". Japanese Journal of Applied Physics. 28 (Part 2, No. 12). Japan Society of Applied Physics: L2112 – L2114. Bibcode:1989JaJAP..28L2112A. doi:10.1143/jjap.28.l2112. ISSN 0021-4922.
Isamu Akasaki; Hiroshi Amano; Masahiro Kito; Kazumasa Hiramatsu (1991). "Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED". Journal of Luminescence. 48–49. Elsevier BV: 666–670. Bibcode:1991JLum...48..666A. doi:10.1016/0022-2313(91)90215-h. ISSN 0022-2313.
Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (February 3, 1986). "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer". Applied Physics Letters. 48 (5). AIP Publishing: 353–355. Bibcode:1986ApPhL..48..353A. doi:10.1063/1.96549. ISSN 0003-6951.
Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). "Growth of Si-doped Al_xGa_1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy". Journal of Crystal Growth. 115 (1–4). Elsevier BV: 648–651. Bibcode:1991JCrGr.115..648M. doi:10.1016/0022-0248(91)90820-u. ISSN 0022-0248.
Amano, Hiroshi; Asahi, Tsunemori; Akasaki, Isamu (February 20, 1990). "Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer". Japanese Journal of Applied Physics. 29 (Part 2, No. 2). Japan Society of Applied Physics: L205 – L206. Bibcode:1990JaJAP..29L.205A. doi:10.1143/jjap.29.l205. ISSN 0021-4922. S2CID 120489784.
Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (November 1, 1995). "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device". Japanese Journal of Applied Physics. 34 (11B). Japan Society of Applied Physics: L1517–L1519. Bibcode:1995JaJAP..34L1517A. doi:10.7567/jjap.34.l1517. ISSN 0021-4922. S2CID 122963134.
Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (September 15, 1991). "Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures". Japanese Journal of Applied Physics. 30 (Part 1, No. 9A). Japan Society of Applied Physics: 1924–1927. Bibcode:1991JaJAP..30.1924I. doi:10.1143/jjap.30.1924. ISSN 0021-4922. S2CID 123428785.
Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki; Komori, Miho; Takeuchi, Hideo; Amano, Hiroshi; Akasaki, Isamu (April 1, 1997). "Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells". Japanese Journal of Applied Physics. 36 (Part 2, No. 4A). Japan Society of Applied Physics: L382 – L385. Bibcode:1997JaJAP..36L.382T. doi:10.1143/jjap.36.l382. ISSN 0021-4922. S2CID 95930600.
Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu (February 15, 2000). "Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells". Japanese Journal of Applied Physics. 39 (Part 1, No. 2A). Japan Society of Applied Physics: 413–416. Bibcode:2000JaJAP..39..413T. doi:10.1143/jjap.39.413. ISSN 0021-4922. S2CID 121954273.

ieee.org

"IEEE Jack S. Kilby Signal Processing Medal Recipients" (PDF). IEEE. Archived from the original (PDF) on June 19, 2010. Retrieved April 15, 2012.
"IEEE JACK A. MORTON AWARD RECIPIENT" (PDF). IEEE. Archived from the original (PDF) on October 13, 2014. Retrieved January 7, 2014.
"Fellow Class of 1999". IEEE. Archived from the original on December 26, 2012. Retrieved February 23, 2013.

inamori-f.or.jp

"Kyoto Prize: Isamu Akasaki". Inamori-f.or.jp. Inamori Foundation. Archived from the original on March 4, 2016. Retrieved November 10, 2015.
"INAMORI FOUNDATION". Inamori-f.or.jp. Archived from the original on March 4, 2016. Retrieved November 10, 2015.

indiatimes.com

economictimes.indiatimes.com

"Chanda Kochhar among three Indians get Asia Game Changer awards". The Economic Times. September 16, 2015. Archived from the original on September 21, 2015. Retrieved October 28, 2020.

interacademies.net

"IAP - About IAP". Interacademies.net. Retrieved November 10, 2015.

iocg.org

"International Organization for Crystal Growth". Iocg.org. Archived from the original on July 21, 2014. Retrieved November 10, 2015.

jsap.jp

jjap.jsap.jp

Isamu Akasaki; Hiroshi Amano (2006). "Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode". Japanese Journal of Applied Physics. 45 (12): 9001–9010. Bibcode:2006JaJAP..45.9001A. doi:10.1143/JJAP.45.9001. S2CID 7702696. Archived from the original on July 22, 2012. Retrieved November 10, 2015.
"Japanese Journal of Applied Physics". jsap.jp. Archived from the original on April 18, 2012. Retrieved November 10, 2015.

jst.go.jp

"トピックス / 赤﨑勇・名城大学大学院理工学研究科教授および名古屋大学特別教授へ知的財産特別貢献賞を授与" [Topics / Special Award for Intellectual Property Activities goes to Prof. Isamu Akasaki]. JST (in Japanese). September 13, 2011. Retrieved April 8, 2011.

kyoto-u.ac.jp

"ノーベル物理学賞受賞者・赤﨑勇博士と京都大学－大学時代に育まれた研究者の芽－" (in Japanese). Kyoto University. Retrieved 2021-09-05.

ocw.kyoto-u.ac.jp

Juichi Yamagiwa (2015-07-16). "Welcome Speech by Juichi Yamagiwa, Dr. of Science, President of Kyoto University - UNESCO International Scientific Symposium Kyoto University, 16 July, 2015" (PDF). Kyoto University OCW (Open Course Ware). Kyoto University. p. 2. Retrieved 2022-06-27.

nae.edu

"NAE Website - Dr. Isamu Akasaki". Nae.edu. Retrieved November 10, 2015.

nagoya-u.ac.jp

"Nagoya University profile 2008" (PDF). nagoya-u.ac.jp. Archived from the original (PDF) on October 17, 2012.

nec.co.jp

"NEC: News Release 98/11/04-01". Nec.co.jp. Retrieved November 10, 2015.

newsonjapan.com

"Novelist, LED developer awarded". Archived from the original on April 11, 2013. Retrieved March 1, 2013.

nifty.com

homepage1.nifty.com

"M͎͎". Nifty.com. Archived from the original on September 13, 2016. Retrieved November 10, 2015.

nii.ac.jp

ci.nii.ac.jp

赤崎 (1964). 赤崎勇「Geの気相成長に関する研究」. CiNii (PhD Thesis) (in Japanese). National Institute of Informatics (Japan). Retrieved 2022-06-27.

nippon.com

"Nobel-Winning Scientist Isamu Akasaki Dies at 92". nippon.com. April 2, 2021. Archived from the original on April 2, 2021. Retrieved April 2, 2021.

nipponpapergroup.com

"Assistance to the Fujiwara Foundation of Science(Nippon Paper Industries Co., LTD.) | Nippon Paper Group". Archived from the original on April 11, 2013. Retrieved March 1, 2013.

nobelprize.org

"The 2014 Nobel Prize in Physics - Press Release". Nobelprize.org. Nobel Media AB 2014. Retrieved October 7, 2014.

pref.aichi.jp

"Asia University Summit pp.7-8" (PDF). Aichi Prefectural Government. 2021. Archived from the original (PDF) on 2022-07-09. Retrieved 2022-06-27.

qeprize.org

"LED Lighting". Queen Elizabeth Prize for Engineering.

rankprize.org

[1] Archived December 13, 2012, at the Wayback Machine

semanticscholar.org

api.semanticscholar.org

Isamu Akasaki; Hiroshi Amano (2006). "Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode". Japanese Journal of Applied Physics. 45 (12): 9001–9010. Bibcode:2006JaJAP..45.9001A. doi:10.1143/JJAP.45.9001. S2CID 7702696. Archived from the original on July 22, 2012. Retrieved November 10, 2015.
Amano, Hiroshi; Asahi, Tsunemori; Akasaki, Isamu (February 20, 1990). "Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer". Japanese Journal of Applied Physics. 29 (Part 2, No. 2). Japan Society of Applied Physics: L205 – L206. Bibcode:1990JaJAP..29L.205A. doi:10.1143/jjap.29.l205. ISSN 0021-4922. S2CID 120489784.
Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (November 1, 1995). "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device". Japanese Journal of Applied Physics. 34 (11B). Japan Society of Applied Physics: L1517–L1519. Bibcode:1995JaJAP..34L1517A. doi:10.7567/jjap.34.l1517. ISSN 0021-4922. S2CID 122963134.
Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (September 15, 1991). "Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures". Japanese Journal of Applied Physics. 30 (Part 1, No. 9A). Japan Society of Applied Physics: 1924–1927. Bibcode:1991JaJAP..30.1924I. doi:10.1143/jjap.30.1924. ISSN 0021-4922. S2CID 123428785.
Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki; Komori, Miho; Takeuchi, Hideo; Amano, Hiroshi; Akasaki, Isamu (April 1, 1997). "Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells". Japanese Journal of Applied Physics. 36 (Part 2, No. 4A). Japan Society of Applied Physics: L382 – L385. Bibcode:1997JaJAP..36L.382T. doi:10.1143/jjap.36.l382. ISSN 0021-4922. S2CID 95930600.
Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu (February 15, 2000). "Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells". Japanese Journal of Applied Physics. 39 (Part 1, No. 2A). Japan Society of Applied Physics: 413–416. Bibcode:2000JaJAP..39..413T. doi:10.1143/jjap.39.413. ISSN 0021-4922. S2CID 121954273.

takeda-foundation.jp

"Social/Economic Well-Being : Technical Achievement: The Development of Blue Light Emitting Semiconductor Devices - Development of the blue light emitting diode and laser diode is the final link in completing the light spectrum for semiconductor devices". Takeda-foundation.jp. Retrieved November 10, 2015.

tms.org

"Recipient: 2006 John Bardeen Award". Tms.org. Archived from the original on March 4, 2016. Retrieved November 10, 2015.

toray.com

"Toray Science and Technology Prize : List of Winners". Toray.com. Archived from the original on October 13, 2014. Retrieved November 10, 2015.

unesco.org

en.unesco.org

"Fifth UNESCO Medals for contributions to the development of nanoscience and nanotechnologies ceremony". UNESCO. February 2016. Retrieved April 3, 2021.

web.archive.org

Isamu Akasaki; Hiroshi Amano (2006). "Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode". Japanese Journal of Applied Physics. 45 (12): 9001–9010. Bibcode:2006JaJAP..45.9001A. doi:10.1143/JJAP.45.9001. S2CID 7702696. Archived from the original on July 22, 2012. Retrieved November 10, 2015.
"Japanese Journal of Applied Physics". jsap.jp. Archived from the original on April 18, 2012. Retrieved November 10, 2015.
"Kyoto Prize: Isamu Akasaki". Inamori-f.or.jp. Inamori Foundation. Archived from the original on March 4, 2016. Retrieved November 10, 2015.
"IEEE Jack S. Kilby Signal Processing Medal Recipients" (PDF). IEEE. Archived from the original (PDF) on June 19, 2010. Retrieved April 15, 2012.
"Asia University Summit pp.7-8" (PDF). Aichi Prefectural Government. 2021. Archived from the original (PDF) on 2022-07-09. Retrieved 2022-06-27.
"Nagoya University profile 2008" (PDF). nagoya-u.ac.jp. Archived from the original (PDF) on October 17, 2012.
"Nobel-Winning Scientist Isamu Akasaki Dies at 92". nippon.com. April 2, 2021. Archived from the original on April 2, 2021. Retrieved April 2, 2021.
"International Organization for Crystal Growth". Iocg.org. Archived from the original on July 21, 2014. Retrieved November 10, 2015.
"IEEE JACK A. MORTON AWARD RECIPIENT" (PDF). IEEE. Archived from the original (PDF) on October 13, 2014. Retrieved January 7, 2014.
[1] Archived December 13, 2012, at the Wayback Machine
"Fellow Class of 1999". IEEE. Archived from the original on December 26, 2012. Retrieved February 23, 2013.
"ECS SSS&T Award". Electrochem.org. Archived from the original on October 12, 2014. Retrieved November 10, 2015.
"Toray Science and Technology Prize : List of Winners". Toray.com. Archived from the original on October 13, 2014. Retrieved November 10, 2015.
"Recipient: 2006 John Bardeen Award". Tms.org. Archived from the original on March 4, 2016. Retrieved November 10, 2015.
"INAMORI FOUNDATION". Inamori-f.or.jp. Archived from the original on March 4, 2016. Retrieved November 10, 2015.
"Chanda Kochhar among three Indians get Asia Game Changer awards". The Economic Times. September 16, 2015. Archived from the original on September 21, 2015. Retrieved October 28, 2020.
"M͎͎". Nifty.com. Archived from the original on September 13, 2016. Retrieved November 10, 2015.

worldcat.org

search.worldcat.org

Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (December 20, 1989). "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)". Japanese Journal of Applied Physics. 28 (Part 2, No. 12). Japan Society of Applied Physics: L2112 – L2114. Bibcode:1989JaJAP..28L2112A. doi:10.1143/jjap.28.l2112. ISSN 0021-4922.
Isamu Akasaki; Hiroshi Amano; Masahiro Kito; Kazumasa Hiramatsu (1991). "Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED". Journal of Luminescence. 48–49. Elsevier BV: 666–670. Bibcode:1991JLum...48..666A. doi:10.1016/0022-2313(91)90215-h. ISSN 0022-2313.
Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (February 3, 1986). "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer". Applied Physics Letters. 48 (5). AIP Publishing: 353–355. Bibcode:1986ApPhL..48..353A. doi:10.1063/1.96549. ISSN 0003-6951.
Akasaki, Isamu; Amano, Hiroshi; Koide, Yasuo; Hiramatsu, Kazumasa; Sawaki, Nobuhiko (1989). "Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga_1−xAl_xN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE". Journal of Crystal Growth. 98 (1–2). Elsevier BV: 209–219. doi:10.1016/0022-0248(89)90200-5. ISSN 0022-0248.
Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). "Growth of Si-doped Al_xGa_1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy". Journal of Crystal Growth. 115 (1–4). Elsevier BV: 648–651. Bibcode:1991JCrGr.115..648M. doi:10.1016/0022-0248(91)90820-u. ISSN 0022-0248.
Amano, Hiroshi; Asahi, Tsunemori; Akasaki, Isamu (February 20, 1990). "Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer". Japanese Journal of Applied Physics. 29 (Part 2, No. 2). Japan Society of Applied Physics: L205 – L206. Bibcode:1990JaJAP..29L.205A. doi:10.1143/jjap.29.l205. ISSN 0021-4922. S2CID 120489784.
Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (November 1, 1995). "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device". Japanese Journal of Applied Physics. 34 (11B). Japan Society of Applied Physics: L1517–L1519. Bibcode:1995JaJAP..34L1517A. doi:10.7567/jjap.34.l1517. ISSN 0021-4922. S2CID 122963134.
Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (September 15, 1991). "Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures". Japanese Journal of Applied Physics. 30 (Part 1, No. 9A). Japan Society of Applied Physics: 1924–1927. Bibcode:1991JaJAP..30.1924I. doi:10.1143/jjap.30.1924. ISSN 0021-4922. S2CID 123428785.
Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki; Komori, Miho; Takeuchi, Hideo; Amano, Hiroshi; Akasaki, Isamu (April 1, 1997). "Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells". Japanese Journal of Applied Physics. 36 (Part 2, No. 4A). Japan Society of Applied Physics: L382 – L385. Bibcode:1997JaJAP..36L.382T. doi:10.1143/jjap.36.l382. ISSN 0021-4922. S2CID 95930600.
Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu (February 15, 2000). "Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells". Japanese Journal of Applied Physics. 39 (Part 1, No. 2A). Japan Society of Applied Physics: 413–416. Bibcode:2000JaJAP..39..413T. doi:10.1143/jjap.39.413. ISSN 0021-4922. S2CID 121954273.