References analysis of the Wikipedia article "Lin Lanying" in the English version

doi.org (Global: 2^nd place; English: 2^nd place)

Chen, Nuofu; He, Hongjia; Wang, Yutian; Pan, Kun; Lin, Lanying (1996-10-01). "Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching". Journal of Crystal Growth. 167 (3–4): 766–768. Bibcode:1996JCrGr.167..766C. doi:10.1016/0022-0248(96)00462-9.

Chen, NuoFu; He, Hongjia; Wang, Yutian; Lin, Lanying (1997-04-01). "Stoichiometric defects in semi-insulating GaAs". Journal of Crystal Growth. 173 (3–4): 325–329. Bibcode:1997JCrGr.173..325C. doi:10.1016/S0022-0248(96)00823-8.

Yang, Bin; Cheng, Yong-hai; Wang, Zhan-guo; Liang, Ji-ben; Liao, Qi-wei; Lin, Lan-ying; Zhu, Zhan-ping; Xu, Bo; Li, Wei (1994-12-26). "Interface roughness scattering in GaAs–AlGaAs modulation-doped heterostructures". Applied Physics Letters. 65 (26): 3329–3331. Bibcode:1994ApPhL..65.3329Y. doi:10.1063/1.112382. ISSN 0003-6951.

Zhou, Bojun; Cao, Funian; Lin, Lanying; Ma, Wenju; Zheng, Yun; Tao, Feng; Xue, Minglun (1994-01-01). Regel, Liya L.; Wilcox, William R. (eds.). Growth of GaAs Single Crystals at High Gravity. Springer US. pp. 53–60. doi:10.1007/978-1-4615-2520-2_5. ISBN 978-1-4613-6073-5.

Lin, Lanying; Zhong, Xingru; Chen, NuoFu (1998-07-15). "Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity". Journal of Crystal Growth. 191 (3): 586–588. Bibcode:1998JCrGr.191..586L. doi:10.1016/S0022-0248(98)00372-8.

Chen, NuoFu; Wang, Yutian; He, Hongjia; Lin, Lanying (1996-09-15). "Effects of point defects on lattice parameters of semiconductors". Physical Review B. 54 (12): 8516–8521. Bibcode:1996PhRvB..54.8516C. doi:10.1103/PhysRevB.54.8516. PMID 9984526.

Yang, Bin; Wang, Zhan-guo; Cheng, Yong-hai; Liang, Ji-ben; Lin, Lan-ying; Zhu, Zhan-ping; Xu, Bo; Li, Wei (1995-03-13). "Influence of DX centers in the AlxGa1−xAs barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs modulation-doped heterostructure". Applied Physics Letters. 66 (11): 1406–1408. doi:10.1063/1.113216. ISSN 0003-6951.

Wu, J.; Wang, Z. G.; Lin, L. Y.; Han, C. B.; Zhang, M.; Bai, S. W. (1996-04-29). "Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer". Applied Physics Letters. 68 (18): 2550–2552. Bibcode:1996ApPhL..68.2550W. doi:10.1063/1.116180. ISSN 0003-6951.

Li, Rui-Gang; Wang, Zhan-Guo; Liang, Ji-Ben; Ren, Guang-Bao; Fan, Ti-Wen; Lin, Lan-Ying (1995-05-01). "Backgating and light sensitivity in GaAs metal-semiconductor field effect transistors". Journal of Crystal Growth. 150, Part 2: 1270–1274. Bibcode:1995JCrGr.150.1270L. doi:10.1016/0022-0248(95)80143-Z.

Tian, J.F.; Jiang, D.S.; Zeng, B.R.; Huang, Lin; Kong, G.L.; Lin, L.Y. (1986). "Photon energy dependence of SW effect in a-Si:H films". Solid State Communications. 57 (7): 543–544. Bibcode:1986SSCom..57..543T. doi:10.1016/0038-1098(86)90627-7.

Wang, Qi-Yuan; Ma, Zhen-Yu; Cai, Tian-Hai; Yu, Yuan-Huan; Lin, Lan-Ying (1999-01-01). "Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon". Semiconductor Science and Technology. 14 (1): 74–76. Bibcode:1999SeScT..14...74W. doi:10.1088/0268-1242/14/1/010. S2CID 250740970.

Lin, L.Y.; Zhong, X.R.; Wang, Z.G.; Li, C.J.; Shi, Z.W.; Zhang, M. (1993). "Properties and applications of GaAs single crystal grown under microgravity conditions". Advances in Space Research. 13 (7): 203–208. Bibcode:1993AdSpR..13g.203L. doi:10.1016/0273-1177(93)90373-j.

Zhong, X. R.; Zhou, B. J.; Yan, Q. M.; Cao, F. N.; Li, C. J.; Lin, L. Y.; Ma, W. J.; Zheng, Y.; Tao, F. (1992-04-02). "Preliminary results of GaAs single crystal growth under high gravity conditions". Journal of Crystal Growth. 119 (1–2): 74–78. Bibcode:1992JCrGr.119...74Z. doi:10.1016/0022-0248(92)90206-X.

Wang, Z.G.; Li, C.J.; Wan, S.K.; Lin, L.Y. (1990). "Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment". Journal of Crystal Growth. 103 (1–4): 38–45. Bibcode:1990JCrGr.103...38W. doi:10.1016/0022-0248(90)90167-j.

Zhiyuan, Dong; Youwen, Zhao; Yiping, Zeng; Manlong, Duan; Wenrong, Sun; Jinghua, Jiao; Lanying, Lin (2003-11-01). "Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances". Journal of Crystal Growth. 259 (1–2): 1–7. Bibcode:2003JCrGr.259....1Z. doi:10.1016/j.jcrysgro.2003.07.009.

Chen, Wei; Xu, Yan; Lin, Zhaojun; Wang, Zhanguo; Lin, Lanying (1998-01-01). "Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite". Solid State Communications. 105 (2): 129–134. Bibcode:1998SSCom.105..129C. doi:10.1016/S0038-1098(97)10075-8.

Tan, Liwen; Wang, Qiyuan; Wang, Jun; Yu, Yuanhuan; Liu, Zhongli; Lin, Lanying (2003-01-01). "Fabrication of novel double-hetero-epitaxial SOI structure Si/γ-Al2O3/Si". Journal of Crystal Growth. 247 (3–4): 255–260. doi:10.1016/S0022-0248(02)01989-9.

Chen, Wei; Wang, Zhanguo; Lin, Lanying; Lin, Jianhua; Su, Mianzeng (1997-08-04). "Photostimulated luminescence of silver clusters in zeolite-Y". Physics Letters A. 232 (5): 391–394. Bibcode:1997PhLA..232..391C. doi:10.1016/S0375-9601(97)00400-3.

Zhao, Youwen; Sun, Niefeng; Dong, Hongwei; Jiao, Jinghua; Zhao, Jianqun; Sun, Tongnian; Lin, Lanying (2002-04-30). "Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers". Materials Science and Engineering: B. 91–92: 521–524. doi:10.1016/S0921-5107(01)01061-3.

Tan, Liwen; Zan, Yude; Wang, Jun; Wang, Qiyuan; Yu, Yuanhuan; Wang, Shurui; Liu, Zhongli; Lin, Lanying (2002-03-01). "Very low-pressure VLP-CVD growth of high quality γ-Al2O3 films on silicon by multi-step process". Journal of Crystal Growth. 236 (1–3): 261–266. doi:10.1016/S0022-0248(01)02159-5.

Chen, Wei; Lin, Zhaojun; Wang, Zhanguo; Lin, Lanying (1996-10-01). "Some new observation on the formation and optical properties of CdS clusters in zeolite-Y". Solid State Communications. 100 (2): 101–104. Bibcode:1996SSCom.100..101W. doi:10.1016/0038-1098(96)00276-1.

Lin, Zhaojun; Wang, Zhanguo; Chen, Wei; Lin, Lanying; Li, Guohua; Liu, Zhenxian; Han, Hexiang; Wang, Zhaoping (1997-06-15). "Absorption spectra of Se8-ring clusters in zeolite 5A". Materials Science and Engineering: B. 47 (2): 91–95. doi:10.1016/S0921-5107(97)00016-0.

Lu, Da-cheng; Liu, Xianglin; Wang, Du; Lin, Lanying (1992-11-01). "Growth of GaSb and GaAsSb in the single phase region by MOVPE". Journal of Crystal Growth. 124 (1–4): 383–388. Bibcode:1992JCrGr.124..383L. doi:10.1016/0022-0248(92)90488-5. S2CID 97718803.

Lanying, Lin; Zhaoqiang, Fang; Bojun, Zhou; Suzhen, Zhu; Xianbi, Xiang; Rangyuan, Wu (1982). "Growth and properties of high purity LPE-GaAs". Journal of Crystal Growth. 56 (3): 533–540. Bibcode:1982JCrGr..56..533L. doi:10.1016/0022-0248(82)90036-7.

Chen, Wei; Wang, Zhanguo; Lin, Lanying; Su, Mianzeng (1998-01-01). "New color centers and photostimulated luminescence of BaFCl:Eu2+". Journal of Physics and Chemistry of Solids. 59 (1): 49–53. Bibcode:1998JPCS...59...49C. doi:10.1016/S0022-3697(97)00129-7.

Renyong, Fan; Yuanhuan, Yu; Shiduan, Yin; Lanying, Lin (1986). "Channeling analysis of self-implanted and recrystallized silicon on sapphire". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 15 (1–6): 350–351. Bibcode:1986NIMPB..15..350R. doi:10.1016/0168-583x(86)90319-8.

Chen, NuoFu; Zhong, Xingru; Lin, Lanying; Xie, Xie; Zhang, Mian (2000-06-01). "Semi-insulating GaAs grown in outer space". Materials Science and Engineering: B. 75 (2–3): 134–138. doi:10.1016/S0921-5107(00)00348-2.

Lei, Zhong; Zhanguo, Wang; Shouke, Wan; Lanying, Lin (1990). "Neutron irradiation induced photoluminescence from silicon crystal grown in ambient hydrogen". Solid State Communications. 74 (11): 1225–1228. Bibcode:1990SSCom..74.1225L. doi:10.1016/0038-1098(90)90311-x.

Liu, Xianglin; Wang, Lianshan; Lu, Da-Cheng; Wang, Du; Wang, Xiaohui; Lin, Lanying (1998-06-15). "The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy". Journal of Crystal Growth. 189–190 (1–2): 287–290. Bibcode:1998JCrGr.189..287L. doi:10.1016/S0022-0248(98)00264-4.

Liu, Xianglin; Lu, Da-Cheng; Wang, Lianshan; Wang, Xiaohui; Wang, Du; Lin, Lanying (1998-09-15). "The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy". Journal of Crystal Growth. 193 (1–2): 23–27. Bibcode:1998JCrGr.193...23L. doi:10.1016/S0022-0248(98)00476-X.

Zhuang, Qiandong; Li, Hanxuan; Pan, Liang; Li, Jinmin; Kong, Meiying; Lin, Lanying (1999-05-01). "Self-organization of the InGaAs/GaAs quantum dots superlattice". Journal of Crystal Growth. 201–202 (3): 1161–1163. Bibcode:1999JCrGr.201.1161Z. doi:10.1016/S0022-0248(99)00010-X.

Chen, Wei; Wang, Zhanguo; Lin, Lanying (1997-03-01). "Thermoluminescence of CdS clusters in zeolite-Y". Journal of Luminescence. 71 (2): 151–156. Bibcode:1997JLum...71..151C. doi:10.1016/S0022-2313(96)00129-9.

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

semanticscholar.org (Global: 11^th place; English: 8^th place)

api.semanticscholar.org

web.archive.org (Global: 1^st place; English: 1^st place)

"Lanying Lin and Fukien Christian University". Fujian Christian university Website. Archived from the original on 2015-12-08. Retrieved 2015-10-11.

Tan, Jiang (2009-08-06). "Pioneer Lanyin Ling in Semiconductor field in China". People Internet. Archived from the original on 2016-03-04. Retrieved 2015-11-29.

"Beijing Zhongkejiaying Company". LED Internet. Archived from the original on 2018-09-26. Retrieved 2015-12-01.

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Lin Lanying (English Wikipedia)

cnledw.com (Global: low place; English: low place)

cqvip.com (Global: 5,710^th place; English: low place)

doi.org (Global: 2^nd place; English: 2^nd place)

fjnu.edu.cn (Global: low place; English: low place)

xcb.fjnu.edu.cn

www3.fjnu.edu.cn

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

imech.ac.cn (Global: low place; English: low place)

dspace.imech.ac.cn

nih.gov (Global: 4^th place; English: 4^th place)

pubmed.ncbi.nlm.nih.gov

people.com.cn (Global: 351^st place; English: 1,081^st place)

finance.people.com.cn

semanticscholar.org (Global: 11^th place; English: 8^th place)

api.semanticscholar.org

web.archive.org (Global: 1^st place; English: 1^st place)

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Lin Lanying (English Wikipedia)

cnledw.com (Global: low place; English: low place)

cqvip.com (Global: 5,710th place; English: low place)

doi.org (Global: 2nd place; English: 2nd place)

fjnu.edu.cn (Global: low place; English: low place)

xcb.fjnu.edu.cn

www3.fjnu.edu.cn

harvard.edu (Global: 18th place; English: 17th place)

ui.adsabs.harvard.edu

imech.ac.cn (Global: low place; English: low place)

dspace.imech.ac.cn

nih.gov (Global: 4th place; English: 4th place)

pubmed.ncbi.nlm.nih.gov

people.com.cn (Global: 351st place; English: 1,081st place)

finance.people.com.cn

semanticscholar.org (Global: 11th place; English: 8th place)

api.semanticscholar.org

web.archive.org (Global: 1st place; English: 1st place)

worldcat.org (Global: 5th place; English: 5th place)

search.worldcat.org

cqvip.com (Global: 5,710^th place; English: low place)

doi.org (Global: 2^nd place; English: 2^nd place)

harvard.edu (Global: 18^th place; English: 17^th place)

nih.gov (Global: 4^th place; English: 4^th place)

people.com.cn (Global: 351^st place; English: 1,081^st place)

semanticscholar.org (Global: 11^th place; English: 8^th place)

web.archive.org (Global: 1^st place; English: 1^st place)

worldcat.org (Global: 5^th place; English: 5^th place)