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Yang, Bin; Wang, Zhan-guo; Cheng, Yong-hai; Liang, Ji-ben; Lin, Lan-ying; Zhu, Zhan-ping; Xu, Bo; Li, Wei (1995-03-13). "Influence of DX centers in the AlxGa1−xAs barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs modulation-doped heterostructure". Applied Physics Letters. 66 (11): 1406–1408. doi:10.1063/1.113216. ISSN0003-6951.
Wu, J.; Wang, Z. G.; Lin, L. Y.; Han, C. B.; Zhang, M.; Bai, S. W. (1996-04-29). "Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer". Applied Physics Letters. 68 (18): 2550–2552. Bibcode:1996ApPhL..68.2550W. doi:10.1063/1.116180. ISSN0003-6951.
Li, Rui-Gang; Wang, Zhan-Guo; Liang, Ji-Ben; Ren, Guang-Bao; Fan, Ti-Wen; Lin, Lan-Ying (1995-05-01). "Backgating and light sensitivity in GaAs metal-semiconductor field effect transistors". Journal of Crystal Growth. 150, Part 2: 1270–1274. Bibcode:1995JCrGr.150.1270L. doi:10.1016/0022-0248(95)80143-Z.
Tian, J.F.; Jiang, D.S.; Zeng, B.R.; Huang, Lin; Kong, G.L.; Lin, L.Y. (1986). "Photon energy dependence of SW effect in a-Si:H films". Solid State Communications. 57 (7): 543–544. Bibcode:1986SSCom..57..543T. doi:10.1016/0038-1098(86)90627-7.
Wang, Qi-Yuan; Ma, Zhen-Yu; Cai, Tian-Hai; Yu, Yuan-Huan; Lin, Lan-Ying (1999-01-01). "Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon". Semiconductor Science and Technology. 14 (1): 74–76. Bibcode:1999SeScT..14...74W. doi:10.1088/0268-1242/14/1/010. S2CID250740970.
Lin, L.Y.; Zhong, X.R.; Wang, Z.G.; Li, C.J.; Shi, Z.W.; Zhang, M. (1993). "Properties and applications of GaAs single crystal grown under microgravity conditions". Advances in Space Research. 13 (7): 203–208. Bibcode:1993AdSpR..13g.203L. doi:10.1016/0273-1177(93)90373-j.
Wang, Z.G.; Li, C.J.; Wan, S.K.; Lin, L.Y. (1990). "Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment". Journal of Crystal Growth. 103 (1–4): 38–45. Bibcode:1990JCrGr.103...38W. doi:10.1016/0022-0248(90)90167-j.
Zhiyuan, Dong; Youwen, Zhao; Yiping, Zeng; Manlong, Duan; Wenrong, Sun; Jinghua, Jiao; Lanying, Lin (2003-11-01). "Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances". Journal of Crystal Growth. 259 (1–2): 1–7. Bibcode:2003JCrGr.259....1Z. doi:10.1016/j.jcrysgro.2003.07.009.
Chen, Wei; Xu, Yan; Lin, Zhaojun; Wang, Zhanguo; Lin, Lanying (1998-01-01). "Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite". Solid State Communications. 105 (2): 129–134. Bibcode:1998SSCom.105..129C. doi:10.1016/S0038-1098(97)10075-8.
Tan, Liwen; Wang, Qiyuan; Wang, Jun; Yu, Yuanhuan; Liu, Zhongli; Lin, Lanying (2003-01-01). "Fabrication of novel double-hetero-epitaxial SOI structure Si/γ-Al2O3/Si". Journal of Crystal Growth. 247 (3–4): 255–260. doi:10.1016/S0022-0248(02)01989-9.
Chen, Wei; Wang, Zhanguo; Lin, Lanying; Lin, Jianhua; Su, Mianzeng (1997-08-04). "Photostimulated luminescence of silver clusters in zeolite-Y". Physics Letters A. 232 (5): 391–394. Bibcode:1997PhLA..232..391C. doi:10.1016/S0375-9601(97)00400-3.
Zhao, Youwen; Sun, Niefeng; Dong, Hongwei; Jiao, Jinghua; Zhao, Jianqun; Sun, Tongnian; Lin, Lanying (2002-04-30). "Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers". Materials Science and Engineering: B. 91–92: 521–524. doi:10.1016/S0921-5107(01)01061-3.
Tan, Liwen; Zan, Yude; Wang, Jun; Wang, Qiyuan; Yu, Yuanhuan; Wang, Shurui; Liu, Zhongli; Lin, Lanying (2002-03-01). "Very low-pressure VLP-CVD growth of high quality γ-Al2O3 films on silicon by multi-step process". Journal of Crystal Growth. 236 (1–3): 261–266. doi:10.1016/S0022-0248(01)02159-5.
Chen, Wei; Lin, Zhaojun; Wang, Zhanguo; Lin, Lanying (1996-10-01). "Some new observation on the formation and optical properties of CdS clusters in zeolite-Y". Solid State Communications. 100 (2): 101–104. Bibcode:1996SSCom.100..101W. doi:10.1016/0038-1098(96)00276-1.
Lin, Zhaojun; Wang, Zhanguo; Chen, Wei; Lin, Lanying; Li, Guohua; Liu, Zhenxian; Han, Hexiang; Wang, Zhaoping (1997-06-15). "Absorption spectra of Se8-ring clusters in zeolite 5A". Materials Science and Engineering: B. 47 (2): 91–95. doi:10.1016/S0921-5107(97)00016-0.
Lanying, Lin; Zhaoqiang, Fang; Bojun, Zhou; Suzhen, Zhu; Xianbi, Xiang; Rangyuan, Wu (1982). "Growth and properties of high purity LPE-GaAs". Journal of Crystal Growth. 56 (3): 533–540. Bibcode:1982JCrGr..56..533L. doi:10.1016/0022-0248(82)90036-7.
Chen, Wei; Wang, Zhanguo; Lin, Lanying; Su, Mianzeng (1998-01-01). "New color centers and photostimulated luminescence of BaFCl:Eu2+". Journal of Physics and Chemistry of Solids. 59 (1): 49–53. Bibcode:1998JPCS...59...49C. doi:10.1016/S0022-3697(97)00129-7.
Renyong, Fan; Yuanhuan, Yu; Shiduan, Yin; Lanying, Lin (1986). "Channeling analysis of self-implanted and recrystallized silicon on sapphire". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 15 (1–6): 350–351. Bibcode:1986NIMPB..15..350R. doi:10.1016/0168-583x(86)90319-8.
Chen, NuoFu; Zhong, Xingru; Lin, Lanying; Xie, Xie; Zhang, Mian (2000-06-01). "Semi-insulating GaAs grown in outer space". Materials Science and Engineering: B. 75 (2–3): 134–138. doi:10.1016/S0921-5107(00)00348-2.
Lei, Zhong; Zhanguo, Wang; Shouke, Wan; Lanying, Lin (1990). "Neutron irradiation induced photoluminescence from silicon crystal grown in ambient hydrogen". Solid State Communications. 74 (11): 1225–1228. Bibcode:1990SSCom..74.1225L. doi:10.1016/0038-1098(90)90311-x.
Liu, Xianglin; Wang, Lianshan; Lu, Da-Cheng; Wang, Du; Wang, Xiaohui; Lin, Lanying (1998-06-15). "The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy". Journal of Crystal Growth. 189–190 (1–2): 287–290. Bibcode:1998JCrGr.189..287L. doi:10.1016/S0022-0248(98)00264-4.
Liu, Xianglin; Lu, Da-Cheng; Wang, Lianshan; Wang, Xiaohui; Wang, Du; Lin, Lanying (1998-09-15). "The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy". Journal of Crystal Growth. 193 (1–2): 23–27. Bibcode:1998JCrGr.193...23L. doi:10.1016/S0022-0248(98)00476-X.
Zhuang, Qiandong; Li, Hanxuan; Pan, Liang; Li, Jinmin; Kong, Meiying; Lin, Lanying (1999-05-01). "Self-organization of the InGaAs/GaAs quantum dots superlattice". Journal of Crystal Growth. 201–202 (3): 1161–1163. Bibcode:1999JCrGr.201.1161Z. doi:10.1016/S0022-0248(99)00010-X.
Wu, J.; Wang, Z. G.; Lin, L. Y.; Han, C. B.; Zhang, M.; Bai, S. W. (1996-04-29). "Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer". Applied Physics Letters. 68 (18): 2550–2552. Bibcode:1996ApPhL..68.2550W. doi:10.1063/1.116180. ISSN0003-6951.
Li, Rui-Gang; Wang, Zhan-Guo; Liang, Ji-Ben; Ren, Guang-Bao; Fan, Ti-Wen; Lin, Lan-Ying (1995-05-01). "Backgating and light sensitivity in GaAs metal-semiconductor field effect transistors". Journal of Crystal Growth. 150, Part 2: 1270–1274. Bibcode:1995JCrGr.150.1270L. doi:10.1016/0022-0248(95)80143-Z.
Tian, J.F.; Jiang, D.S.; Zeng, B.R.; Huang, Lin; Kong, G.L.; Lin, L.Y. (1986). "Photon energy dependence of SW effect in a-Si:H films". Solid State Communications. 57 (7): 543–544. Bibcode:1986SSCom..57..543T. doi:10.1016/0038-1098(86)90627-7.
Wang, Qi-Yuan; Ma, Zhen-Yu; Cai, Tian-Hai; Yu, Yuan-Huan; Lin, Lan-Ying (1999-01-01). "Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon". Semiconductor Science and Technology. 14 (1): 74–76. Bibcode:1999SeScT..14...74W. doi:10.1088/0268-1242/14/1/010. S2CID250740970.
Lin, L.Y.; Zhong, X.R.; Wang, Z.G.; Li, C.J.; Shi, Z.W.; Zhang, M. (1993). "Properties and applications of GaAs single crystal grown under microgravity conditions". Advances in Space Research. 13 (7): 203–208. Bibcode:1993AdSpR..13g.203L. doi:10.1016/0273-1177(93)90373-j.
Wang, Z.G.; Li, C.J.; Wan, S.K.; Lin, L.Y. (1990). "Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment". Journal of Crystal Growth. 103 (1–4): 38–45. Bibcode:1990JCrGr.103...38W. doi:10.1016/0022-0248(90)90167-j.
Zhiyuan, Dong; Youwen, Zhao; Yiping, Zeng; Manlong, Duan; Wenrong, Sun; Jinghua, Jiao; Lanying, Lin (2003-11-01). "Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances". Journal of Crystal Growth. 259 (1–2): 1–7. Bibcode:2003JCrGr.259....1Z. doi:10.1016/j.jcrysgro.2003.07.009.
Chen, Wei; Xu, Yan; Lin, Zhaojun; Wang, Zhanguo; Lin, Lanying (1998-01-01). "Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite". Solid State Communications. 105 (2): 129–134. Bibcode:1998SSCom.105..129C. doi:10.1016/S0038-1098(97)10075-8.
Chen, Wei; Wang, Zhanguo; Lin, Lanying; Lin, Jianhua; Su, Mianzeng (1997-08-04). "Photostimulated luminescence of silver clusters in zeolite-Y". Physics Letters A. 232 (5): 391–394. Bibcode:1997PhLA..232..391C. doi:10.1016/S0375-9601(97)00400-3.
Chen, Wei; Lin, Zhaojun; Wang, Zhanguo; Lin, Lanying (1996-10-01). "Some new observation on the formation and optical properties of CdS clusters in zeolite-Y". Solid State Communications. 100 (2): 101–104. Bibcode:1996SSCom.100..101W. doi:10.1016/0038-1098(96)00276-1.
Lanying, Lin; Zhaoqiang, Fang; Bojun, Zhou; Suzhen, Zhu; Xianbi, Xiang; Rangyuan, Wu (1982). "Growth and properties of high purity LPE-GaAs". Journal of Crystal Growth. 56 (3): 533–540. Bibcode:1982JCrGr..56..533L. doi:10.1016/0022-0248(82)90036-7.
Chen, Wei; Wang, Zhanguo; Lin, Lanying; Su, Mianzeng (1998-01-01). "New color centers and photostimulated luminescence of BaFCl:Eu2+". Journal of Physics and Chemistry of Solids. 59 (1): 49–53. Bibcode:1998JPCS...59...49C. doi:10.1016/S0022-3697(97)00129-7.
Renyong, Fan; Yuanhuan, Yu; Shiduan, Yin; Lanying, Lin (1986). "Channeling analysis of self-implanted and recrystallized silicon on sapphire". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 15 (1–6): 350–351. Bibcode:1986NIMPB..15..350R. doi:10.1016/0168-583x(86)90319-8.
Lei, Zhong; Zhanguo, Wang; Shouke, Wan; Lanying, Lin (1990). "Neutron irradiation induced photoluminescence from silicon crystal grown in ambient hydrogen". Solid State Communications. 74 (11): 1225–1228. Bibcode:1990SSCom..74.1225L. doi:10.1016/0038-1098(90)90311-x.
Liu, Xianglin; Wang, Lianshan; Lu, Da-Cheng; Wang, Du; Wang, Xiaohui; Lin, Lanying (1998-06-15). "The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy". Journal of Crystal Growth. 189–190 (1–2): 287–290. Bibcode:1998JCrGr.189..287L. doi:10.1016/S0022-0248(98)00264-4.
Liu, Xianglin; Lu, Da-Cheng; Wang, Lianshan; Wang, Xiaohui; Wang, Du; Lin, Lanying (1998-09-15). "The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy". Journal of Crystal Growth. 193 (1–2): 23–27. Bibcode:1998JCrGr.193...23L. doi:10.1016/S0022-0248(98)00476-X.
Zhuang, Qiandong; Li, Hanxuan; Pan, Liang; Li, Jinmin; Kong, Meiying; Lin, Lanying (1999-05-01). "Self-organization of the InGaAs/GaAs quantum dots superlattice". Journal of Crystal Growth. 201–202 (3): 1161–1163. Bibcode:1999JCrGr.201.1161Z. doi:10.1016/S0022-0248(99)00010-X.
Yang, Bin; Wang, Zhan-guo; Cheng, Yong-hai; Liang, Ji-ben; Lin, Lan-ying; Zhu, Zhan-ping; Xu, Bo; Li, Wei (1995-03-13). "Influence of DX centers in the AlxGa1−xAs barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs modulation-doped heterostructure". Applied Physics Letters. 66 (11): 1406–1408. doi:10.1063/1.113216. ISSN0003-6951.
Wu, J.; Wang, Z. G.; Lin, L. Y.; Han, C. B.; Zhang, M.; Bai, S. W. (1996-04-29). "Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer". Applied Physics Letters. 68 (18): 2550–2552. Bibcode:1996ApPhL..68.2550W. doi:10.1063/1.116180. ISSN0003-6951.
