For example, see Cheng, Yuhua; Hu, Chenming (1999). MOSFET modeling & BSIM3 user's guide. Springer. ISBN978-0-7923-8575-2. The most recent version of the BSIM model is described in V., Sriramkumar; Paydavosi, Navid; Lu, Darsen; Lin, Chung-Hsun; Dunga, Mohan; Yao, Shijing; Morshed, Tanvir; Niknejad, Ali & Hu, Chenming (2012). "BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model"(PDF). Department of Electronic Engineering and Computer Science, University of California Berkeley. Archived from the original(PDF) on 2014-07-27. Retrieved 2012-04-01.
For example, see Cheng, Yuhua; Hu, Chenming (1999). MOSFET modeling & BSIM3 user's guide. Springer. ISBN978-0-7923-8575-2. The most recent version of the BSIM model is described in V., Sriramkumar; Paydavosi, Navid; Lu, Darsen; Lin, Chung-Hsun; Dunga, Mohan; Yao, Shijing; Morshed, Tanvir; Niknejad, Ali & Hu, Chenming (2012). "BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model"(PDF). Department of Electronic Engineering and Computer Science, University of California Berkeley. Archived from the original(PDF) on 2014-07-27. Retrieved 2012-04-01.
For a uniformly doped p-type substrate with bulk acceptor doping of NA per unit volume,
with ni the intrinsic mobile carrier density per unit volume in the bulk. See, for example, Arora, Narain (2007). "Equation 5.12". Mosfet modeling for VLSI simulation: theory and practice. World Scientific. p. 173. ISBN9789812707581.
Zeitzoff, P. M.; Hutchby, J. A.; Huff, H. R. (2002). "Figure 12: Simplified cross section of FinFET double-gate MOSFET". In Park, Yoon-Soo; Shur, Michael; Tang, William (eds.). Frontiers in electronics: future chips : proceedings of the 2002 Workshop on Frontiers in Electronics (WOFE-02), St Croix, Virgin Islands, USA, 6–11 January 2002. World Scientific. p. 82. ISBN978-981-238-222-1.
Jaeger, Richard C.; Blalock, Travis N. "Figure 4.15 IEEE Standard MOS transistor circuit symbols". Microelectronic Circuit Design(PDF). Archived(PDF) from the original on 2022-10-09.
Jaeger, Richard C.; Blalock, Travis N. "Figure 4.15 IEEE Standard MOS transistor circuit symbols". Microelectronic Circuit Design(PDF). Archived(PDF) from the original on 2022-10-09.
patents.google.com
Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" U.S. patent 1745175A
US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13
For example, see Cheng, Yuhua; Hu, Chenming (1999). MOSFET modeling & BSIM3 user's guide. Springer. ISBN978-0-7923-8575-2. The most recent version of the BSIM model is described in V., Sriramkumar; Paydavosi, Navid; Lu, Darsen; Lin, Chung-Hsun; Dunga, Mohan; Yao, Shijing; Morshed, Tanvir; Niknejad, Ali & Hu, Chenming (2012). "BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model"(PDF). Department of Electronic Engineering and Computer Science, University of California Berkeley. Archived from the original(PDF) on 2014-07-27. Retrieved 2012-04-01.