MOSFET (English Wikipedia)

Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
Shichman, H. & Hodges, D. A. (1968). "Modeling and simulation of insulated-gate field-effect transistor switching circuits". IEEE Journal of Solid-State Circuits. SC-3 (3): 285–289. Bibcode:1968IJSSC...3..285S. doi:10.1109/JSSC.1968.1049902.

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For example, see Cheng, Yuhua; Hu, Chenming (1999). MOSFET modeling & BSIM3 user's guide. Springer. ISBN 978-0-7923-8575-2. The most recent version of the BSIM model is described in V., Sriramkumar; Paydavosi, Navid; Lu, Darsen; Lin, Chung-Hsun; Dunga, Mohan; Yao, Shijing; Morshed, Tanvir; Niknejad, Ali & Hu, Chenming (2012). "BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model" (PDF). Department of Electronic Engineering and Computer Science, University of California Berkeley. Archived from the original (PDF) on 2014-07-27. Retrieved 2012-04-01.

books.google.com (Global: 3^rd place; English: 3^rd place)

Moskowitz, Sanford L. (2016). Advanced Materials Innovation: Managing Global Technology in the 21st century. John Wiley & Sons. p. 168. ISBN 978-0-470-50892-3.
Christophe Lécuyer; David C. Brook; Jay Last (2010). Makers of the Microchip: A Documentary History of Fairchild Semiconductor. MIT Press. pp. 62–63. ISBN 978-0-262-01424-3.
Claeys, Cor L. (2003). ULSI Process Integration III: Proceedings of the International Symposium. The Electrochemical Society. pp. 27–30. ISBN 978-1-56677-376-8.
Deal, Bruce E. (1998). "Highlights Of Silicon Thermal Oxidation Technology". Silicon materials science and technology. The Electrochemical Society. p. 183. ISBN 978-1566771931.
Bassett, Ross Knox (2007). To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology. Johns Hopkins University Press. pp. 22–23. ISBN 978-0-8018-8639-3.
For example, see Cheng, Yuhua; Hu, Chenming (1999). MOSFET modeling & BSIM3 user's guide. Springer. ISBN 978-0-7923-8575-2. The most recent version of the BSIM model is described in V., Sriramkumar; Paydavosi, Navid; Lu, Darsen; Lin, Chung-Hsun; Dunga, Mohan; Yao, Shijing; Morshed, Tanvir; Niknejad, Ali & Hu, Chenming (2012). "BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model" (PDF). Department of Electronic Engineering and Computer Science, University of California Berkeley. Archived from the original (PDF) on 2014-07-27. Retrieved 2012-04-01.
van der Meer, P. R.; van Staveren, A.; van Roermund, A. H. M. (2004). Low-Power Deep Sub-Micron CMOS Logic: Subthreshold Current Reduction. Dordrecht: Springer. p. 78. ISBN 978-1-4020-2848-9.
Smith, Leslie S.; Hamilton, Alister (1998). Neuromorphic Systems: Engineering Silicon from Neurobiology. World Scientific. pp. 52–56. ISBN 978-981-02-3377-8.
Kumar, Satish (2004). Neural Networks: A Classroom Approach. Tata McGraw-Hill. p. 688. ISBN 978-0-07-048292-0.
Glesner, Manfred; Zipf, Peter; Renovell, Michel (2002). Field-programmable Logic and Applications: 12th International Conference. Dordrecht: Springer. p. 425. ISBN 978-3-540-44108-3.
Vittoz, Eric A. (1996). "The Fundamentals of Analog Micropower Design". In Toumazou, Chris; Battersby, Nicholas C.; Porta, Sonia (eds.). Circuits and systems tutorials. John Wiley and Sons. pp. 365–372. ISBN 978-0-7803-1170-1.
Shukla, Sandeep K.; Bahar, R. Iris (2004). Nano, Quantum and Molecular Computing. Springer. p. 10 and Fig. 1.4, p. 11. ISBN 978-1-4020-8067-8.
Srivastava, Ashish; Sylvester, Dennis; Blaauw, David (2005). Statistical Analysis and Optimization For VLSI: Timing and Power. Springer. p. 135. ISBN 978-0-387-25738-9.
For a uniformly doped p-type substrate with bulk acceptor doping of N_A per unit volume,
$\varphi _{B}={\frac {k_{B}T}{q}}\ln \left({\frac {N_{A}}{n_{i}}}\right)\ ,$
with n_i the intrinsic mobile carrier density per unit volume in the bulk. See, for example, Arora, Narain (2007). "Equation 5.12". Mosfet modeling for VLSI simulation: theory and practice. World Scientific. p. 173. ISBN 9789812707581.
Colinge, Jean-Pierre; Colinge, Cynthia A. (2002). Physics of Semiconductor Devices. Dordrecht: Springer. p. 233, Figure 7.46. ISBN 978-1-4020-7018-1.
Weber, Eicke R.; Dabrowski, Jarek, eds. (2004). Predictive Simulation of Semiconductor Processing: Status and Challenges. Dordrecht: Springer. p. 5, Figure 1.2. ISBN 978-3-540-20481-7.
Roy, Kaushik; Yeo, Kiat Seng (2004). Low Voltage, Low Power VLSI Subsystems. McGraw-Hill Professional. Fig. 2.1, p. 44, Fig. 1.1, p. 4. ISBN 978-0-07-143786-8.
Vasileska, Dragica; Goodnick, Stephen (2006). Computational Electronics. Morgan & Claypool. p. 103. ISBN 978-1-59829-056-1.
Chen, Wai-Kai (2006). The VLSI Handbook. CRC Press. Fig. 2.28, p. 2–22. ISBN 978-0-8493-4199-1.
Soudris, D.; Pirsch, P.; Barke, E., eds. (2000). Integrated Circuit Design: Power and Timing Modeling, Optimization, and Simulation (10th Int. Workshop). Springer. p. 38. ISBN 978-3-540-41068-3.
Zeitzoff, P. M.; Hutchby, J. A.; Huff, H. R. (2002). "Figure 12: Simplified cross section of FinFET double-gate MOSFET". In Park, Yoon-Soo; Shur, Michael; Tang, William (eds.). Frontiers in electronics: future chips : proceedings of the 2002 Workshop on Frontiers in Electronics (WOFE-02), St Croix, Virgin Islands, USA, 6–11 January 2002. World Scientific. p. 82. ISBN 978-981-238-222-1.
Lee, J.-H.; Lee, J.-W.; Jung, H.-A.-R.; Choi, B.-K. (2009). "Comparison of SOI FinFETs and bulk FinFETs: Figure 2". Silicon-on-Insulator Technology and Devices. The Electrochemical Society. p. 102. ISBN 978-1-56677-712-4.
Hadziioannou, Georges; Malliaras, George G. (2007). Semiconducting polymers: chemistry, physics and engineering. Wiley-VCH. ISBN 978-3-527-31271-9.
Jones, William (1997). Organic Molecular Solids: Properties and Applications. CRC Press. ISBN 978-0-8493-9428-7.

brunningsoftware.co.uk (Global: low place; English: low place)

"Using a MOSFET as a Switch". Archived from the original on 2018-04-11. 090507 brunningsoftware.co.uk

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DigiKey (2016-09-22). "The Significance of the Intrinsic Body Diodes Inside MOSFETs". DigiKey. Archived from the original on 2024-07-24. Retrieved 2025-06-26.

doi.org (Global: 2^nd place; English: 2^nd place)

Kim, Seongjae; Seo, Juhyung; Choi, Junhwan; Yoo, Hocheon (7 October 2022). "Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices". Nano-Micro Letters. 14 (1) 201. Springer Nature. doi:10.1007/s40820-022-00942-1. eISSN 2150-5551. PMC 9547046.
Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite journal}}: ISBN / Date incompatibility (help)CS1 maint: periodical has ISBN (link)
Shichman, H. & Hodges, D. A. (1968). "Modeling and simulation of insulated-gate field-effect transistor switching circuits". IEEE Journal of Solid-State Circuits. SC-3 (3): 285–289. Bibcode:1968IJSSC...3..285S. doi:10.1109/JSSC.1968.1049902.
Lindsay, R.; Pawlak; Kittl; Henson; Torregiani; Giangrandi; Surdeanu; Vandervorst; Mayur; Ross; McCoy; Gelpey; Elliott; Pages; Satta; Lauwers; Stolk; Maex (2011). "A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS". MRS Proceedings. 765 D7.4. doi:10.1557/PROC-765-D7.4.
Xu, Wentao; Guo, Chang; Rhee, Shi-Woo (2013). "High performance organic field-effect transistors using cyanoethyl pullulan (CEP) high-k polymer cross-linked with trimethylolpropane triglycidyl ether (TTE) at low temperatures". Journal of Materials Chemistry C. 1 (25): 3955. doi:10.1039/C3TC30134F.

eejournal.com (Global: low place; English: low place)

Leibson, Steven (April 3, 2023). "A Brief History of the MOS transistor, Part 1: Early Visionaries". EEJournal. Retrieved April 12, 2026.

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"Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit". element14. Archived from the original on 5 April 2015. Retrieved 27 November 2010.
"Power MOSFET Basics: Understanding Gate Charge and Using It To Assess Switching Performance". element14. Archived from the original on 30 June 2014. Retrieved 27 November 2010.

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Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.

equars.com (Global: low place; English: low place)

"Body effect". Equars.com. Archived from the original on 2014-11-10. Retrieved 2012-06-02.

espacenet.com (Global: 950^th place; English: 813^th place)

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US 3025589 Hoerni, J. A.: "Method of Manufacturing Semiconductor Devices" filed May 1, 1959
US 3064167 Hoerni, J. A.: "Semiconductor device" filed May 15, 1960

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Heil, Oskar, "Improvements in or relating to electrical amplifiers and other control arrangements and devices", Patent No. GB439457, European Patent Office, filed in Great Britain 1934-03-02, published December 6, 1935 (originally filed in Germany March 2, 1934).

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Jaeger, Richard C.; Blalock, Travis N. "Figure 4.15 IEEE Standard MOS transistor circuit symbols". Microelectronic Circuit Design (PDF). Archived (PDF) from the original on 2022-10-09.
"VLSI wiring capacitance" (PDF). IBM Journal of Research and Development. 9 February 2021. Archived (PDF) from the original on 2022-10-09.^{[dead link]}

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Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.

itrs.net (Global: low place; English: low place)

"International Technology Roadmap for Semiconductors". Archived from the original on 2015-12-28.

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"D-MOSFET OPERATION AND BIASING" (PDF). Archived (PDF) from the original on 2022-10-22.

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Jaeger, Richard C.; Blalock, Travis N. "Figure 4.15 IEEE Standard MOS transistor circuit symbols". Microelectronic Circuit Design (PDF). Archived (PDF) from the original on 2022-10-09.

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ncbi.nlm.nih.gov

Kim, Seongjae; Seo, Juhyung; Choi, Junhwan; Yoo, Hocheon (7 October 2022). "Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices". Nano-Micro Letters. 14 (1) 201. Springer Nature. doi:10.1007/s40820-022-00942-1. eISSN 2150-5551. PMC 9547046.

patents.google.com (Global: 1,154^th place; English: 606^th place)

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Xu, Wentao; Guo, Chang; Rhee, Shi-Woo (2013). "High performance organic field-effect transistors using cyanoethyl pullulan (CEP) high-k polymer cross-linked with trimethylolpropane triglycidyl ether (TTE) at low temperatures". Journal of Materials Chemistry C. 1 (25): 3955. doi:10.1039/C3TC30134F.

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Kim, Seongjae; Seo, Juhyung; Choi, Junhwan; Yoo, Hocheon (7 October 2022). "Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices". Nano-Micro Letters. 14 (1) 201. Springer Nature. doi:10.1007/s40820-022-00942-1. eISSN 2150-5551. PMC 9547046.

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"Using a MOSFET as a Switch". Archived from the original on 2018-04-11. 090507 brunningsoftware.co.uk
For example, see Cheng, Yuhua; Hu, Chenming (1999). MOSFET modeling & BSIM3 user's guide. Springer. ISBN 978-0-7923-8575-2. The most recent version of the BSIM model is described in V., Sriramkumar; Paydavosi, Navid; Lu, Darsen; Lin, Chung-Hsun; Dunga, Mohan; Yao, Shijing; Morshed, Tanvir; Niknejad, Ali & Hu, Chenming (2012). "BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model" (PDF). Department of Electronic Engineering and Computer Science, University of California Berkeley. Archived from the original (PDF) on 2014-07-27. Retrieved 2012-04-01.
"Body effect". Equars.com. Archived from the original on 2014-11-10. Retrieved 2012-06-02.
DigiKey (2016-09-22). "The Significance of the Intrinsic Body Diodes Inside MOSFETs". DigiKey. Archived from the original on 2024-07-24. Retrieved 2025-06-26.
"Electronic Circuit Symbols". circuitstoday.com. 9 November 2011. Archived from the original on 13 October 2014.
Cushman, Robert H. (20 September 1975). "2-1/2-generation μP's-$10 parts that perform like low-end mini's" (PDF). EDN. Archived from the original (PDF) on 24 April 2016. Retrieved 8 August 2013.
Wong, James; Whitmore, Jerry. "Section 2: Multiplexing Signals with Analog Switches" (PDF). Archived from the original (PDF) on 2025-06-27. Retrieved 2025-06-27.
"ReVera's FinFET Control". revera.com. Archived from the original on 19 September 2010.
"International Technology Roadmap for Semiconductors". Archived from the original on 2015-12-28.
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"Power MOSFET Basics: Understanding Gate Charge and Using It To Assess Switching Performance". element14. Archived from the original on 30 June 2014. Retrieved 27 November 2010.

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worldcat.org

Gray, P. R.; Hurst, P. J.; Lewis, S. H. & Meyer, R. G. (2001). Analysis and Design of Analog Integrated Circuits (4th ed.). New York: Wiley. pp. 66–67. ISBN 978-0-471-32168-2.
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Malik, Norbert R. (1995). Electronic circuits: analysis, simulation, and design. Englewood Cliffs, New Jersey: Prentice Hall. pp. 315–316. ISBN 978-0-02-374910-0.
Sedra, A. S. & Smith, K. C. (2004). Microelectronic Circuits (5th ed.). Oxford University Press. p. 250, Eq. 4.14. ISBN 978-0-19-514251-8.
Gray, P. R.; Hurst, P. J.; Lewis, S. H.; Meyer, R. G. (2001). Analysis and design of analog integrated circuits (4th ed.). New York: Wiley. §1.5.2 p. 45. ISBN 978-0-471-32168-2.
Sedra, A. S. & Smith, K. C. (2004). Microelectronic circuits (5th ed.). New York: Oxford University Press. p. 552. ISBN 978-0-19-514251-8.

search.worldcat.org

Kim, Seongjae; Seo, Juhyung; Choi, Junhwan; Yoo, Hocheon (7 October 2022). "Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices". Nano-Micro Letters. 14 (1) 201. Springer Nature. doi:10.1007/s40820-022-00942-1. eISSN 2150-5551. PMC 9547046.
Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.

x.com (Global: 58^th place; English: 125^th place)

"On this day in 1959, The MOSFET transistor was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs". X. Bell Labs. Retrieved April 12, 2026.

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"Triumph of the MOS Transistor". YouTube. Computer History Museum. August 6, 2010. Retrieved April 12, 2026.

MOSFET (English Wikipedia)

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ic.gc.ca (Global: low place; English: 6,328^th place)

intel.com (Global: 1,727^th place; English: 1,234^th place)

invent.org (Global: 8,450^th place; English: 6,923^rd place)

iop.org (Global: 1,046^th place; English: 1,608^th place)

linkedin.com (Global: 713^th place; English: 549^th place)

nih.gov (Global: 5^th place; English: 5^th place)

patents.google.com (Global: 1,154^th place; English: 606^th place)

rsc.org (Global: 2,104^th place; English: 1,855^th place)

sites.google.com (Global: 658^th place; English: 657^th place)

springer.com (Global: 182^nd place; English: 172^nd place)

trailing-edge.com (Global: low place; English: 9,185^th place)

web.archive.org (Global: 1^st place; English: 1^st place)

worldcat.org (Global: 4^th place; English: 4^th place)

x.com (Global: 58^th place; English: 125^th place)

youtube.com (Global: 13^th place; English: 14^th place)