Magnetoresistive RAM (English Wikipedia)

Schäfers, M.; Drewello, V.; Reiss, G.; Thomas, A.; Thiel, K.; Eilers, G.; Münzenberg, M.; Schuhmann, H.; Seibt, M. (2009). "Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching". Applied Physics Letters. 95 (23): 232119. arXiv:0907.3579. Bibcode:2009ApPhL..95w2119S. doi:10.1063/1.3272268. S2CID 119251634.

avalanche-technology.com

"UMC and Avalanche Technology Partner for MRAM Development and 28nm Production". Avalanche Technology. 2018-08-06. Retrieved 2020-08-22.

books.google.com

Fuxi, Gan; Yang, Wang (February 9, 2015). Data Storage at the Nanoscale: Advances and Applications. CRC Press. ISBN 9789814613200 – via Google Books.

businesswire.com

"Everspin ST-MRAM Incorporated for Cache Memory Into Buffalo Memory SSD". Business Wire. 2013-11-18. Retrieved 2014-01-09.

crocus-technology.com

"News | Crocus Technology". Archived from the original on April 22, 2010.

doi.org

Akerman, J. (2005). "APPLIED PHYSICS: Toward a Universal Memory". Science. 308 (5721): 508–510. doi:10.1126/science.1110549. PMID 15845842. S2CID 60577959.
Engel, B. N.; Akerman, J.; Butcher, B.; Dave, R. W.; Deherrera, M.; Durlam, M.; Grynkewich, G.; Janesky, J.; Pietambaram, S. V.; Rizzo, N. D.; Slaughter, J. M.; Smith, K.; Sun, J. J.; Tehrani, S. (2005). "A 4-Mb toggle MRAM based on a novel bit and switching method". IEEE Transactions on Magnetics. 41 (1): 132. Bibcode:2005ITM....41..132E. doi:10.1109/TMAG.2004.840847. S2CID 38616311.
Sbiaa, R.; Meng, H.; Piramanayagam, S. N. (2011). "Materials with perpendicular magnetic anisotropy for magnetic random access memory". Physica Status Solidi RRL. 5 (12): 413. Bibcode:2011PSSRR...5..413S. doi:10.1002/pssr.201105420. S2CID 98626346.
Khvalkovskiy, A.V.; Apalkov, D.; Watts, S.; Chepulskii, R.; Beach, R S.; Ong, A.; Tang, X.; Driskill-Smith, A.; Butler, W.H.; Visscher, P.B.; Lottis, D.; Chen, E.; Nikitin, V.; Krounbi, M. (2013). "Basic principles of STT-MRAM cell operation in memory arrays". Journal of Physics D: Applied Physics. 46 (7): 074001. Bibcode:2013JPhD...46g4001K. doi:10.1088/0022-3727/46/7/074001. S2CID 110519121.
Schäfers, M.; Drewello, V.; Reiss, G.; Thomas, A.; Thiel, K.; Eilers, G.; Münzenberg, M.; Schuhmann, H.; Seibt, M. (2009). "Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching". Applied Physics Letters. 95 (23): 232119. arXiv:0907.3579. Bibcode:2009ApPhL..95w2119S. doi:10.1063/1.3272268. S2CID 119251634.
Bishnoi, R.; Ebrahimi, M.; Oboril, F.; Tahoori, M.B. (2014). "Read disturb fault detection in STT-MRAM". 2014 International Test Conference. pp. 1–7. doi:10.1109/TEST.2014.7035342. ISBN 978-1-4799-4722-5. S2CID 7957290.
Chang, M.; Shen, S.; Liu, C.; Wu, C.; Lin, Y.; King, Y.; Lin, C.; Liao, H.; Chih, Y.; Yamauchi, H. (March 2013). "An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory". IEEE Journal of Solid-State Circuits. 48 (3): 864–877. Bibcode:2013IJSSC..48..864C. doi:10.1109/JSSC.2012.2235013. S2CID 23020634.
L Berger (October 1996). "Emission of spin waves by a magnetic multilayer traversed by a current". Physical Review B. 54 (13): 9353–8. Bibcode:1996PhRvB..54.9353B. doi:10.1103/physrevb.54.9353. PMID 9984672.
Slonczewski, J.C. (October 1996). "Current-driven excitation of magnetic multilayers". Journal of Magnetism and Magnetic Materials. 159 (1–2): L1–L7. Bibcode:1996JMMM..159L...1S. doi:10.1016/0304-8853(96)00062-5.
N.P. Vasil'eva (October 2003), "Magnetic Random Access Memory Devices", Automation and Remote Control, 64 (9): 1369–85, doi:10.1023/a:1026039700433, S2CID 195291447

edn.com

Ron Wilson (April 19, 2010). "Everspin MRAM reaches 16 Mbits, looks toward embedded use in SoCs". EDN. Archived from the original on January 21, 2013.

eenewsanalog.com

"Sony revealed as MRAM foundry for Avalanche". eeNews Analog. 2016-10-31. Retrieved 2020-08-22.

eetasia.com

"Samsung, Hynix partner on STT-MRAM". Archived from the original on 2008-11-12. Retrieved 2008-10-01.

eetimes.com

Lammers, David (October 7, 2006). "MRAM debut cues memory transition". EE Times.
LaPedus, Mark (November 13, 2008). "Freescale's MRAM spin-off rolls new devices". EE Times.
Johnson, R Colin (November 16, 2009). "MRAM chips go serial in smart meters". EE Times.
"Voltage-controlled MRAM: Status, challenges and prospects". EE Times.
"Samsung Says It's Shipping 28-nm Embedded MRAM". EE Times.

electronicdesign.com

"StackPath". 21 March 2018.

electronicsweekly.com

David Manners (April 20, 2010). "Everspin Launches 16Mbit MRAM, Volume In July". Electronics Weekly.

espacenet.com

worldwide.espacenet.com

States6633498 United States 6633498, Engel; Bradley N., Janesky; Jason Allen, Rizzo; Nicholas D., "Magnetoresistive random access memory with reduced switching field"

everspin.com

"NASA JPL, MRAM Technology Status" (PDF).
"Freescale launches independent company to accelerate MRAM business" (PDF) (Press release). 29 June 2008. Archived from the original (PDF) on 2012-07-26.
"Everspin press release" (PDF). Archived from the original (PDF) on March 30, 2013.

freescale.com

media.freescale.com

"Freescale Leads Industry in Commercializing MRAM Technology" (Press release). Freescale Semiconductor. 2006-07-10. Archived from the original on 2007-10-13. Retrieved 2006-07-10.

gizmag.com

"Magnetic nanoparticles breakthrough could help shrink digital storage". Gizmag.com. 8 January 2014. Retrieved 2014-01-09.

globalfoundries.com

"Everspin and GLOBALFOUNDRIES Partner to Supply Fully Processed 300mm CMOS Wafers with Everspin's ST-MRAM Technology". GLOBALFOUNDRIES (Press release). 2014-10-27. Archived from the original on 2020-09-24. Retrieved 2020-08-22.

harvard.edu

ui.adsabs.harvard.edu

Engel, B. N.; Akerman, J.; Butcher, B.; Dave, R. W.; Deherrera, M.; Durlam, M.; Grynkewich, G.; Janesky, J.; Pietambaram, S. V.; Rizzo, N. D.; Slaughter, J. M.; Smith, K.; Sun, J. J.; Tehrani, S. (2005). "A 4-Mb toggle MRAM based on a novel bit and switching method". IEEE Transactions on Magnetics. 41 (1): 132. Bibcode:2005ITM....41..132E. doi:10.1109/TMAG.2004.840847. S2CID 38616311.
Sbiaa, R.; Meng, H.; Piramanayagam, S. N. (2011). "Materials with perpendicular magnetic anisotropy for magnetic random access memory". Physica Status Solidi RRL. 5 (12): 413. Bibcode:2011PSSRR...5..413S. doi:10.1002/pssr.201105420. S2CID 98626346.
Khvalkovskiy, A.V.; Apalkov, D.; Watts, S.; Chepulskii, R.; Beach, R S.; Ong, A.; Tang, X.; Driskill-Smith, A.; Butler, W.H.; Visscher, P.B.; Lottis, D.; Chen, E.; Nikitin, V.; Krounbi, M. (2013). "Basic principles of STT-MRAM cell operation in memory arrays". Journal of Physics D: Applied Physics. 46 (7): 074001. Bibcode:2013JPhD...46g4001K. doi:10.1088/0022-3727/46/7/074001. S2CID 110519121.
Schäfers, M.; Drewello, V.; Reiss, G.; Thomas, A.; Thiel, K.; Eilers, G.; Münzenberg, M.; Schuhmann, H.; Seibt, M. (2009). "Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching". Applied Physics Letters. 95 (23): 232119. arXiv:0907.3579. Bibcode:2009ApPhL..95w2119S. doi:10.1063/1.3272268. S2CID 119251634.
Chang, M.; Shen, S.; Liu, C.; Wu, C.; Lin, Y.; King, Y.; Lin, C.; Liao, H.; Chih, Y.; Yamauchi, H. (March 2013). "An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory". IEEE Journal of Solid-State Circuits. 48 (3): 864–877. Bibcode:2013IJSSC..48..864C. doi:10.1109/JSSC.2012.2235013. S2CID 23020634.
L Berger (October 1996). "Emission of spin waves by a magnetic multilayer traversed by a current". Physical Review B. 54 (13): 9353–8. Bibcode:1996PhRvB..54.9353B. doi:10.1103/physrevb.54.9353. PMID 9984672.
Slonczewski, J.C. (October 1996). "Current-driven excitation of magnetic multilayers". Journal of Magnetism and Magnetic Materials. 159 (1–2): L1–L7. Bibcode:1996JMMM..159L...1S. doi:10.1016/0304-8853(96)00062-5.

hitachi.com

"Prototype 2 Mbit Non-Volatile RAM Chip Employing Spin-Transfer Torque Writing Method" (Press release). Hitachi Ltd. 2007-02-13. Retrieved 2007-02-13.

ibm.com

research.ibm.com

Gallagher, W.J.; Parkin, S.S.P. (24 January 2006). "Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip". IBM.
Desikan, Rajagopalan; et al. (27 September 2002). "On-chip MRAM as a High-Bandwidth, Low-Latency Replacement for DRAM Physical Memories" (PDF). Department of Computer Sciences, University of Texas at Austin.
"GMR: A Giant Leap for IBM Research". Archived from the original on 2012-01-11.

www-03.ibm.com

"IBM and TDK Launch Joint Research & Development Project for Advanced MRAM" (Press release). IBM. 2007-08-19. Archived from the original on October 13, 2007. Retrieved 2007-08-22.

ibm.com

"Researchers celebrate 20th anniversary of IBM's invention of Spin Torque MRAM by demonstrating scalability for the next decade — IBM Blog Research". IBM Blog Research. 2016-07-07. Retrieved 2016-07-11.

ieee.org

ieeexplore.ieee.org

Takemura, R.; Kawahara, T.; Miura, K.; Yamamoto, H.; Hayakawa, J.; Matsuzaki, N.; Ono, K.; Yamanouchi, M.; Ito, K.; Takahashi, H.; Ikeda, S. (2009). "32-mb 2t1r spram with localized bi-directional write driver and '1'/'0'dual-array equalized reference cell". 2009 Symposium on VLSI Circuits. IEEE. pp. 84–85. ISBN 978-1-4244-3307-0.

koreatimes.co.kr

Kim, Yoo-chul (20 April 2016). "Cheil Worldwide acquires Founded". Koreatimes.co.kr. Korea Times. Retrieved 27 June 2016. 'Yes, Samsung will commercialize MRAMs and ReRAMs according to our own schedule. We are on our way and will be ready soon,' Kim told reporters.

linkedin.com

"Breakdown-Limited Write Time Windows for STT-MRAM". www.linkedin.com.

mram-info.com

"Everspin starts to ship customer samples of its 28nm 1Gb STT-MRAM chips | MRAM-Info". www.mram-info.com. Retrieved 2019-12-03.
"IBM to reveal the world's first 14nm STT-MRAM node". 2020-12-15. Retrieved 2020-12-17.
"TSMC shows its eMRAM technology roadmap | MRAM-Info". www.mram-info.com. Retrieved 2021-05-16.

nec.co.jp

"Toshiba and NEC Develop World's Fastest, Highest Density MRAM" (Press release). NEC Corporation. 2006-02-07. Retrieved 2006-07-10.
"NEC Develops World's Fastest SRAM-Compatible MRAM With Operation Speed of 250MHz" (Press release). NEC Corporation. 2007-11-30. Retrieved 2007-12-01.

newscientist.com

Kate McAlpine, "Spin flip trick points to fastest RAM yet", NewScientist, 13 August 2008

nih.gov

pubmed.ncbi.nlm.nih.gov

Akerman, J. (2005). "APPLIED PHYSICS: Toward a Universal Memory". Science. 308 (5721): 508–510. doi:10.1126/science.1110549. PMID 15845842. S2CID 60577959.
L Berger (October 1996). "Emission of spin waves by a magnetic multilayer traversed by a current". Physical Review B. 54 (13): 9353–8. Bibcode:1996PhRvB..54.9353B. doi:10.1103/physrevb.54.9353. PMID 9984672.

nikkeibp.co.jp

techon.nikkeibp.co.jp

Motoyuki Ooishi; Nikkei Electronics (2010-06-23). "[VLSI] Hitachi, Tohoku Univ Announce Multi-level Cell SPRAM — Tech-On!". Techon.nikkeibp.co.jp. Retrieved 2014-01-09.

nsf.gov

"NSF Award Search: Award#0539675 - SBIR Phase I: Zero-Remanence Tamper-Responsive Cryptokey Memory". www.nsf.gov.

nve-spintronics.com

"How MRAM Works".

nve.com

"James Daughton, Magnetoresistive Random Access Memory (MRAM)" (PDF).

nytimes.com

de la Merced, Michael J. (June 9, 2008). "Chip Maker to Announce It Will Spin Off Memory Unit". The New York Times.

patents.google.com

United States 4731757A, "Magnetoresistive memory including thin film storage cells having tapered ends"
Maiken, Eric. "Nonvolatile random access memory device". patents.google.com. Japan Patent Office. Retrieved 20 May 2023.

physorg.com

"Renesas, Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer", 1 December 2005.

ptb.de

"Extremely fast MRAM data storage within reach" (Press release). PTB. 2011-03-08. Retrieved 2011-03-09.

scientificamerican.com

Greenemeier, Larry. "Japanese Satellite First to Use Magnetic Memory". Scientific American.

semanticscholar.org

api.semanticscholar.org

Akerman, J. (2005). "APPLIED PHYSICS: Toward a Universal Memory". Science. 308 (5721): 508–510. doi:10.1126/science.1110549. PMID 15845842. S2CID 60577959.
Engel, B. N.; Akerman, J.; Butcher, B.; Dave, R. W.; Deherrera, M.; Durlam, M.; Grynkewich, G.; Janesky, J.; Pietambaram, S. V.; Rizzo, N. D.; Slaughter, J. M.; Smith, K.; Sun, J. J.; Tehrani, S. (2005). "A 4-Mb toggle MRAM based on a novel bit and switching method". IEEE Transactions on Magnetics. 41 (1): 132. Bibcode:2005ITM....41..132E. doi:10.1109/TMAG.2004.840847. S2CID 38616311.
Sbiaa, R.; Meng, H.; Piramanayagam, S. N. (2011). "Materials with perpendicular magnetic anisotropy for magnetic random access memory". Physica Status Solidi RRL. 5 (12): 413. Bibcode:2011PSSRR...5..413S. doi:10.1002/pssr.201105420. S2CID 98626346.
Khvalkovskiy, A.V.; Apalkov, D.; Watts, S.; Chepulskii, R.; Beach, R S.; Ong, A.; Tang, X.; Driskill-Smith, A.; Butler, W.H.; Visscher, P.B.; Lottis, D.; Chen, E.; Nikitin, V.; Krounbi, M. (2013). "Basic principles of STT-MRAM cell operation in memory arrays". Journal of Physics D: Applied Physics. 46 (7): 074001. Bibcode:2013JPhD...46g4001K. doi:10.1088/0022-3727/46/7/074001. S2CID 110519121.
Schäfers, M.; Drewello, V.; Reiss, G.; Thomas, A.; Thiel, K.; Eilers, G.; Münzenberg, M.; Schuhmann, H.; Seibt, M. (2009). "Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching". Applied Physics Letters. 95 (23): 232119. arXiv:0907.3579. Bibcode:2009ApPhL..95w2119S. doi:10.1063/1.3272268. S2CID 119251634.
Bishnoi, R.; Ebrahimi, M.; Oboril, F.; Tahoori, M.B. (2014). "Read disturb fault detection in STT-MRAM". 2014 International Test Conference. pp. 1–7. doi:10.1109/TEST.2014.7035342. ISBN 978-1-4799-4722-5. S2CID 7957290.
Chang, M.; Shen, S.; Liu, C.; Wu, C.; Lin, Y.; King, Y.; Lin, C.; Liao, H.; Chih, Y.; Yamauchi, H. (March 2013). "An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory". IEEE Journal of Solid-State Circuits. 48 (3): 864–877. Bibcode:2013IJSSC..48..864C. doi:10.1109/JSSC.2012.2235013. S2CID 23020634.
N.P. Vasil'eva (October 2003), "Magnetic Random Access Memory Devices", Automation and Remote Control, 64 (9): 1369–85, doi:10.1023/a:1026039700433, S2CID 195291447

semiaccurate.com

Charlie Demerjian (November 16, 2012). "Everspin makes ST-MRAM a reality, LSI AIS 2012: Non-volatile memory with DDR3 speeds". SemiAccurate.com.

taipeitimes.com

Chia-nan, Lin. "Local researchers make advanced MRAM device". www.taipeitimes.com. Taipei Times. Retrieved 9 November 2021.

thessdreview.com

Strong, Scott (August 5, 1026). "Everspin Announces Sampling of Industry's First 256Mb Perpendicular Spin Torque MRAM to Customers". The SSD Review.

thic.org

"Past, Present and Future of MRAM", NIST Magnetic Technology, 22 July 2003

tomshardware.com

February 2018, Paul Alcorn 26 (26 February 2018). "Lenovo Dishes On 3D XPoint DIMMS, Apache Pass In ThinkSystem SD650". Tom's Hardware.{{cite web}}: CS1 maint: numeric names: authors list (link)

toshiba.co.jp

"Toshiba develops new MRAM device that opens the way to giga-bits capacity" (Press release). Toshiba Corporation. 2007-11-06. Retrieved 2007-11-06.

umn.edu

license.umn.edu

"Lower Switching Current for Spin-Torque Transfer in Magnetic Storage Devices such as Magnetoresistive Random Access Memory (MRAM)". University of Minnesota. Retrieved 15 August 2011.

utah.edu

cs.utah.edu

"Area, Power, and Latency Considerations of STT-MRAM to Substitute for Main Memory" (PDF).

web.archive.org

"GMR: A Giant Leap for IBM Research". Archived from the original on 2012-01-11.
"Freescale Leads Industry in Commercializing MRAM Technology" (Press release). Freescale Semiconductor. 2006-07-10. Archived from the original on 2007-10-13. Retrieved 2006-07-10.
"IBM and TDK Launch Joint Research & Development Project for Advanced MRAM" (Press release). IBM. 2007-08-19. Archived from the original on October 13, 2007. Retrieved 2007-08-22.
"Samsung, Hynix partner on STT-MRAM". Archived from the original on 2008-11-12. Retrieved 2008-10-01.
"Freescale launches independent company to accelerate MRAM business" (PDF) (Press release). 29 June 2008. Archived from the original (PDF) on 2012-07-26.
"News | Crocus Technology". Archived from the original on April 22, 2010.
"Everspin press release" (PDF). Archived from the original (PDF) on March 30, 2013.
"Everspin and GLOBALFOUNDRIES Partner to Supply Fully Processed 300mm CMOS Wafers with Everspin's ST-MRAM Technology". GLOBALFOUNDRIES (Press release). 2014-10-27. Archived from the original on 2020-09-24. Retrieved 2020-08-22.
"IEDM: Magnetic RAM debuts as 28nm embedded NVM | EETE Analog". EE Times. Archived from the original on 2017-03-03. Retrieved 2017-03-03.