Memristor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Memristor" in English language version.

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Bertin, Eric; Halley, David; Henry, Yves; Najjari, Nabil; Majjad, Hicham; Bowen, Martin; DaCosta, Victor; Arabski, Jacek; Doudin, Bernard (2011), "Random barrier double-well model for resistive switching in tunnel barriers", Journal of Applied Physics, 109 (8): 013712–013712–5, Bibcode:2011JAP...109a3712D, doi:10.1063/1.3530610, retrieved 2014-12-15

allaboutcircuits.com

"MIT and Ericsson Set Goals for Zero-power Devices and a New Field—"Lithionics" - News". www.allaboutcircuits.com.

archives-ouvertes.fr

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Langenberg, D. N. (1974), "Physical Interpretation of the $\cos \phi$ term and implications for detectors" (PDF), Revue de Physique Appliquée, 9: 35–40, doi:10.1051/rphysap:019740090103500
Mehonic, A.; Cueff, S.; Wojdak, M. , …; Kenyon, A. J. (2012). "Resistive switching in silicon suboxide films" (PDF). Journal of Applied Physics. 111 (7): 074507–074507–9. Bibcode:2012JAP...111g4507M. doi:10.1063/1.3701581.{{cite journal}}: CS1 maint: multiple names: authors list (link)
Abdelhouahad, M.-S.; Lozi, R.; Chua, L. (September 2014), "Memfractance: A Mathematical Paradigm for Circuit Elements with Memory" (PDF), International Journal of Bifurcation and Chaos, 24 (9): 1430023 (29 pages), Bibcode:2014IJBC...2430023A, doi:10.1142/S0218127414300237

arstechnica.com

Gutmann, E. (2008-05-01), "Maintaining Moore's law with new memristor circuits", Ars Technica, retrieved 2008-05-01

arxiv.org

Pershin, Y. V.; Di Ventra, M. (2019). "A simple test for ideal memristors". Journal of Physics D: Applied Physics. 52 (1): 01LT01. arXiv:1806.07360. Bibcode:2019JPhD...52aLT01P. doi:10.1088/1361-6463/aae680. S2CID 53506924.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (2019). "An experimental proof that resistance-switching memories are not memristors". Advanced Electronic Materials. arXiv:1909.07238. doi:10.1002/aelm.202000010. S2CID 202577242.
Peotta, A.; Di Ventra, M. (2014), "Superconducting Memristors", Physical Review Applied, 2 (3): 034011-1–034011-10, arXiv:1311.2975, Bibcode:2014PhRvP...2c4011P, doi:10.1103/PhysRevApplied.2.034011, S2CID 119020953
Meuffels, P.; Soni, R. (2012). "Fundamental Issues and Problems in the Realization of Memristors". arXiv:1207.7319 [cond-mat.mes-hall].
Di Ventra, M.; Pershin, Y. V. (2013), "On the physical properties of memristive, memcapacitive and meminductive systems", Nanotechnology, 24 (25): 255201, arXiv:1302.7063, Bibcode:2013Nanot..24y5201D, CiteSeerX 10.1.1.745.8657, doi:10.1088/0957-4484/24/25/255201, PMID 23708238, S2CID 14892809
Sundqvist, Kyle M.; Ferry, David K.; Kish, Laszlo B. (2017-11-21). "Memristor Equations: Incomplete Physics and Undefined Passivity/Activity". Fluctuation and Noise Letters. 16 (4): 1771001–519. arXiv:1703.09064. Bibcode:2017FNL....1671001S. doi:10.1142/S0219477517710018. S2CID 1408810.
Valov, I.; et al. (2013), "Nanobatteries in redox-based resistive switches require extension of memristor theory", Nature Communications, 4 (4): 1771, arXiv:1303.2589, Bibcode:2013NatCo...4.1771V, doi:10.1038/ncomms2784, PMC 3644102, PMID 23612312
Kish, Laszlo B.; Granqvist, Claes G.; Khatri, Sunil P.; Wen, He (2014). "Demons: Maxwell's demon, Szilard's engine and Landauer's erasure–dissipation". International Journal of Modern Physics: Conference Series. 33: 1460364. arXiv:1412.2166. Bibcode:2014IJMPS..3360364K. doi:10.1142/s2010194514603640. S2CID 44851287.
Slipko, V. A.; Pershin, Y. V.; Di Ventra, M. (2013), "Changing the state of a memristive system with white noise", Physical Review E, 87 (1): 042103, arXiv:1209.4103, Bibcode:2013PhRvE..87a2103L, doi:10.1103/PhysRevE.87.012103, PMID 23410279, S2CID 2237458
Linn, E.; Siemon, A.; Waser, R.; Menzel, S. (2014-03-23). "Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices". IEEE Transactions on Circuits and Systems I: Regular Papers. 61 (8): 2402–2410. arXiv:1403.5801. Bibcode:2014arXiv1403.5801L. doi:10.1109/TCSI.2014.2332261. S2CID 18673562.
Pershin, Y. V.; Di Ventra, M. (2011), "Memory effects in complex materials and nanoscale systems", Advances in Physics, 60 (2): 145–227, arXiv:1011.3053, Bibcode:2011AdPhy..60..145P, doi:10.1080/00018732.2010.544961, S2CID 119098973
Caravelli; et al. (2017). "The complex dynamics of memristive circuits: analytical results and universal slow relaxation". Physical Review E. 95 (2): 022140. arXiv:1608.08651. Bibcode:2017PhRvE..95b2140C. doi:10.1103/PhysRevE.95.022140. PMID 28297937. S2CID 6758362.
Caravelli; et al. (2021). "Global minimization via classical tunnelling assisted by collective force field formation". Science Advances. 7 (52): 022140. arXiv:1608.08651. Bibcode:2021SciA....7.1542C. doi:10.1126/sciadv.abh1542. PMID 28297937. S2CID 231847346.
Mouttet, B. (2012). "Memresistors and non-memristive zero-crossing hysteresis curves". arXiv:1201.2626 [cond-mat.mes-hall].
Kavehei, O.; Iqbal, A.; Kim, Y.S.; Eshraghian, K.; Al-Sarawi, S. F.; Abbott, D. (2010). "The fourth element: characteristics, modelling and electromagnetic theory of the memristor". Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences. 466 (2120): 2175–2202. arXiv:1002.3210. Bibcode:2010RSPSA.466.2175K. doi:10.1098/rspa.2009.0553. S2CID 7625839.
Erokhin, V.; Fontana, M. P. (2008). "Electrochemically controlled polymeric device: A memristor (and more) found two years ago". arXiv:0807.0333 [cond-mat.soft].
An; Alibart, F.; Pleutin, S.; Guerin, D.; Novembre, C.; Lenfant, S.; Lmimouni, K.; Gamrat, C.; Vuillaume, D. (2010). "An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse". Advanced Functional Materials. 20 (2): 330–337. arXiv:0907.2540. doi:10.1002/adfm.200901335. S2CID 16335153.
Alibart, F.; Pleutin, S.; Bichler, O.; Gamrat, C.; Serrano-Gotarredona, T.; Linares-Barranco, B.; Vuillaume, D. (2012). "A Memristive Nanoparticle/Organic Hybrid Synapstor for Neuroinspired Computing". Advanced Functional Materials. 22 (3): 609–616. arXiv:1112.3138. doi:10.1002/adfm.201101935. hdl:10261/83537. S2CID 18687826.
Pavlov's; Transistors, Organic; Bichler, O.; Zhao, W.; Alibart, F.; Pleutin, S.; Lenfant, S.; Vuillaume, D.; Gamrat, C. (2013). "Pavlov's Dog Associative Learning Demonstrated on Synaptic-Like Organic Transistors". Neural Computation. 25 (2): 549–566. arXiv:1302.3261. Bibcode:2013arXiv1302.3261B. doi:10.1162/NECO_a_00377. PMID 22970878. S2CID 16972302.
Chanthbouala, A.; et al. (2012), "A ferroelectric memristor", Nature Materials, 11 (10): 860–864, arXiv:1206.3397, Bibcode:2012NatMa..11..860C, doi:10.1038/nmat3415, PMID 22983431, S2CID 10372470
Chanthbouala, A.; Matsumoto, R.; Grollier, J.; Cros, V.; Anane, A.; Fert, A.; Khvalkovskiy, A. V.; Zvezdin, K. A.; Nishimura, K.; Nagamine, Y.; Maehara, H.; Tsunekawa, K.; Fukushima, A.; Yuasa, S. (2011-04-10). "Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities". Nature Physics. 7 (8): 626–630. arXiv:1102.2106. Bibcode:2011NatPh...7..626C. doi:10.1038/nphys1968. S2CID 119221544.
Krzysteczko, P.; Günter, R.; Thomas, A. (2009), "Memristive switching of MgO based magnetic tunnel junctions", Applied Physics Letters, 95 (11): 112508, arXiv:0907.3684, Bibcode:2009ApPhL..95k2508K, CiteSeerX 10.1.1.313.2571, doi:10.1063/1.3224193, S2CID 15383692
Pershin, Y. V.; Di Ventra, M. (2008), "Spin memristive systems: Spin memory effects in semiconductor spintronics", Physical Review B, 78 (11): 113309, arXiv:0806.2151, Bibcode:2008PhRvB..78k3309P, doi:10.1103/PhysRevB.78.113309, S2CID 10938532
Pershin, Y. V.; Di Ventra, M. (2008), "Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime", Physical Review B, 77 (7): 073301, arXiv:0707.4475, Bibcode:2008PhRvB..77g3301P, doi:10.1103/PhysRevB.77.073301, S2CID 119604218
Campbell, K. (January 2017), "Self-directed channel memristor for high temperature operation", Microelectronics Journal, 59: 10–14, arXiv:1608.05357, doi:10.1016/j.mejo.2016.11.006, S2CID 27889124
Pershin, Y. V.; La Fontaine, S.; Di Ventra, M. (2009), "Memristive model of amoeba learning", Physical Review E, 80 (2): 021926, arXiv:0810.4179, Bibcode:2009PhRvE..80b1926P, doi:10.1103/PhysRevE.80.021926, PMID 19792170, S2CID 9820970
Merrikh-Bayat, F.; Bagheri-Shouraki, S.; Rohani, A. (2011), "Memristor crossbar-based hardware implementation of IDS method", IEEE Transactions on Fuzzy Systems, 19 (6): 1083–1096, arXiv:1008.5133, doi:10.1109/TFUZZ.2011.2160024, S2CID 3163846
Merrikh-Bayat, F.; Bagheri-Shouraki, S. (2011). "Efficient neuro-fuzzy system and its Memristor Crossbar-based Hardware Implementation". arXiv:1103.1156 [cs.AI].
Di Ventra, M.; Pershin, Y. V.; Chua, L. (2009), "Circuit elements with memory: memristors, memcapacitors and meminductors", Proceedings of the IEEE, 97 (10): 1717–1724, arXiv:0901.3682, Bibcode:2009arXiv0901.3682D, doi:10.1109/JPROC.2009.2021077, S2CID 7136764

bbc.co.uk

news.bbc.co.uk

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bbc.co.uk

Palmer, J. (2012-05-18), "Memristors in silicon promising for dense, fast memory", BBC News, retrieved 2012-05-18

cnet.com

news.cnet.com

Kanellos, M. (2008-04-30), "HP makes memory from a once theoretical circuit", CNET News, retrieved 2008-04-30

doi.org

Chua, L. (1971). "Memristor-The missing circuit element". IEEE Transactions on Circuit Theory. 18 (5): 507–519. CiteSeerX 10.1.1.189.3614. doi:10.1109/TCT.1971.1083337.
Chua, L. O.; Kang, S. M. (1976-01-01), "Memristive devices and systems", Proceedings of the IEEE, 64 (2): 209–223, doi:10.1109/PROC.1976.10092, S2CID 6008332
Pershin, Y. V.; Di Ventra, M. (2019). "A simple test for ideal memristors". Journal of Physics D: Applied Physics. 52 (1): 01LT01. arXiv:1806.07360. Bibcode:2019JPhD...52aLT01P. doi:10.1088/1361-6463/aae680. S2CID 53506924.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (2019). "An experimental proof that resistance-switching memories are not memristors". Advanced Electronic Materials. arXiv:1909.07238. doi:10.1002/aelm.202000010. S2CID 202577242.
Langenberg, D. N. (1974), "Physical Interpretation of the $\cos \phi$ term and implications for detectors" (PDF), Revue de Physique Appliquée, 9: 35–40, doi:10.1051/rphysap:019740090103500
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Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.; Williams, R. Stanley (2008). "The missing memristor found" (PDF). Nature. 453 (7191): 80–83. Bibcode:2008Natur.453...80S. doi:10.1038/nature06932. PMID 18451858. S2CID 4367148.
Williams, R. S. (2008). "How We Found The Missing Memristor" (PDF). IEEE Spectrum. 45 (12): 28–35. doi:10.1109/MSPEC.2008.4687366. S2CID 27319894. Archived from the original (PDF) on 2018-03-26. Retrieved 2018-03-26.
Di Ventra, M.; Pershin, Y. V. (2013), "On the physical properties of memristive, memcapacitive and meminductive systems", Nanotechnology, 24 (25): 255201, arXiv:1302.7063, Bibcode:2013Nanot..24y5201D, CiteSeerX 10.1.1.745.8657, doi:10.1088/0957-4484/24/25/255201, PMID 23708238, S2CID 14892809
Sundqvist, Kyle M.; Ferry, David K.; Kish, Laszlo B. (2017-11-21). "Memristor Equations: Incomplete Physics and Undefined Passivity/Activity". Fluctuation and Noise Letters. 16 (4): 1771001–519. arXiv:1703.09064. Bibcode:2017FNL....1671001S. doi:10.1142/S0219477517710018. S2CID 1408810.
Abraham, Isaac (2018-07-20). "The case for rejecting the memristor as a fundamental circuit element". Scientific Reports. 8 (1): 10972. Bibcode:2018NatSR...810972A. doi:10.1038/s41598-018-29394-7. PMC 6054652. PMID 30030498.
Valov, I.; et al. (2013), "Nanobatteries in redox-based resistive switches require extension of memristor theory", Nature Communications, 4 (4): 1771, arXiv:1303.2589, Bibcode:2013NatCo...4.1771V, doi:10.1038/ncomms2784, PMC 3644102, PMID 23612312
Zidan, Mohammed A.; Strachan, John Paul; Lu, Wei D. (2018-01-08). "The future of electronics based on memristive systems". Nature Electronics. 1 (1): 22–29. doi:10.1038/s41928-017-0006-8. S2CID 187510377.
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Caravelli; et al. (2021). "Global minimization via classical tunnelling assisted by collective force field formation". Science Advances. 7 (52): 022140. arXiv:1608.08651. Bibcode:2021SciA....7.1542C. doi:10.1126/sciadv.abh1542. PMID 28297937. S2CID 231847346.
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Mehonic, A.; Cueff, S.; Wojdak, M. , …; Kenyon, A. J. (2012). "Resistive switching in silicon suboxide films" (PDF). Journal of Applied Physics. 111 (7): 074507–074507–9. Bibcode:2012JAP...111g4507M. doi:10.1063/1.3701581.{{cite journal}}: CS1 maint: multiple names: authors list (link)
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