Metal–semiconductor junction (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Metal–semiconductor junction" in English language version.

refsWebsite

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17doi.org

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13harvard.edu

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9worldcat.org

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6books.google.com

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2cuny.edu

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2zenodo.org

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2espacenet.com

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2aps.org

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2aip.org

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2iop.org

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2semanticscholar.org

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1sciencedirect.com

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1nasa.gov

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1patents.google.com

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1academia.edu

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academia.edu

Stein, Eric (2018-01-01). "Fiction in the Integrated Circuit". TWU Master's Thesis: 58.

aip.org

pubs.aip.org

Fuller, C. S.; Ditzenberger, J. A. (1956-05-01). "Diffusion of Donor and Acceptor Elements in Silicon". Journal of Applied Physics. 27 (5): 544–553. Bibcode:1956JAP....27..544F. doi:10.1063/1.1722419. ISSN 0021-8979.
Miller, R. C.; Savage, A. (1956-12-01). "Diffusion of Aluminum in Single Crystal Silicon". Journal of Applied Physics. 27 (12): 1430–1432. Bibcode:1956JAP....27.1430M. doi:10.1063/1.1722283. ISSN 0021-8979.

aps.org

link.aps.org

Fuller, C. S.; Ditzenberger, J. A. (1953-07-01). "Diffusion of Lithium into Germanium and Silicon". Physical Review. 91 (1): 193. Bibcode:1953PhRv...91..193F. doi:10.1103/PhysRev.91.193. ISSN 0031-899X.
Fuller, C. S.; Struthers, J. D.; Ditzenberger, J. A.; Wolfstirn, K. B. (1954-03-15). "Diffusivity and Solubility of Copper in Germanium". Physical Review. 93 (6): 1182–1189. Bibcode:1954PhRv...93.1182F. doi:10.1103/PhysRev.93.1182. ISSN 0031-899X.

books.google.com

Braun, F. (1874), "Ueber die Stromleitung durch Schwefelmetalle" [On current conduction through metal sulfides], Annalen der Physik und Chemie (in German), 153 (4): 556–563, Bibcode:1875AnP...229..556B, doi:10.1002/andp.18752291207
Bassett, Ross Knox (2007). To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology. Johns Hopkins University Press. p. 328. ISBN 9780801886393.
The Industrial Reorganization Act: The communications industry. U.S. Government Printing Office. 1973. p. 1475.
Kasper, E. (2018). Silicon-Molecular Beam Epitaxy. CRC Press. ISBN 9781351093514.
Button, Kenneth J. (1982). Infrared and Millimeter Waves V6: Systems and Components. Elsevier. p. 214. ISBN 9780323150590.
Anand, Y. (2013). "Microwave Schottky Barrier Diodes". Metal-Semiconductor Schottky Barrier Junctions and Their Applications. Springer Science & Business Media. p. 220. ISBN 9781468446555.

cuny.edu

academic.brooklyn.cuny.edu

doi.org

Bardeen, J. (1947). "Surface States and Rectification at a Metal Semi-Conductor Contact". Physical Review. 71 (10): 717–727. Bibcode:1947PhRv...71..717B. doi:10.1103/PhysRev.71.717.
Tung, R. (2001). "Formation of an electric dipole at metal-semiconductor interfaces". Physical Review B. 64 (20): 205310. Bibcode:2001PhRvB..64t5310T. doi:10.1103/PhysRevB.64.205310.
Nishimura, T.; Kita, K.; Toriumi, A. (2007). "Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface". Applied Physics Letters. 91 (12): 123123. Bibcode:2007ApPhL..91l3123N. doi:10.1063/1.2789701.
Lieten, R. R.; Degroote, S.; Kuijk, M.; Borghs, G. (2008). "Ohmic contact formation on n-type Ge". Applied Physics Letters. 92 (2): 022106. Bibcode:2008ApPhL..92b2106L. doi:10.1063/1.2831918.
Braun, F. (1874), "Ueber die Stromleitung durch Schwefelmetalle" [On current conduction through metal sulfides], Annalen der Physik und Chemie (in German), 153 (4): 556–563, Bibcode:1875AnP...229..556B, doi:10.1002/andp.18752291207
Pierce, G. W. (1907). "Crystal Rectifiers for Electric Currents and Electric Oscillations. Part I. Carborundum". Physical Review. Series I. 25 (1): 31–60. Bibcode:1907PhRvI..25...31P. doi:10.1103/PhysRevSeriesI.25.31.
S. Arscott and M. Gaudet "Electrowetting at a liquid metal-semiconductor junction" Appl. Phys. Lett. 103, 074104 (2013). doi:10.1063/1.4818715
S. Arscott "Electrowetting and semiconductors" RSC Advances 4, 29223 (2014). doi:10.1039/C4RA04187A
Fuller, C. S.; Ditzenberger, J. A. (1953-07-01). "Diffusion of Lithium into Germanium and Silicon". Physical Review. 91 (1): 193. Bibcode:1953PhRv...91..193F. doi:10.1103/PhysRev.91.193. ISSN 0031-899X.
Fuller, C. S.; Struthers, J. D.; Ditzenberger, J. A.; Wolfstirn, K. B. (1954-03-15). "Diffusivity and Solubility of Copper in Germanium". Physical Review. 93 (6): 1182–1189. Bibcode:1954PhRv...93.1182F. doi:10.1103/PhysRev.93.1182. ISSN 0031-899X.
Fuller, C. S.; Ditzenberger, J. A. (1956-05-01). "Diffusion of Donor and Acceptor Elements in Silicon". Journal of Applied Physics. 27 (5): 544–553. Bibcode:1956JAP....27..544F. doi:10.1063/1.1722419. ISSN 0021-8979.
Fuller, C. S.; Whelan, J. M. (1958-08-01). "Diffusion, solubility, and electrical behavior of copper in gallium arsenide". Journal of Physics and Chemistry of Solids. 6 (2): 173–177. Bibcode:1958JPCS....6..173F. doi:10.1016/0022-3697(58)90091-X. ISSN 0022-3697.
Miller, R. C.; Savage, A. (1956-12-01). "Diffusion of Aluminum in Single Crystal Silicon". Journal of Applied Physics. 27 (12): 1430–1432. Bibcode:1956JAP....27.1430M. doi:10.1063/1.1722283. ISSN 0021-8979.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of The Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of The Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Atalla, M.; Kahng, D. (November 1962). "A new "Hot electron" triode structure with semiconductor-metal emitter". IRE Transactions on Electron Devices. 9 (6): 507–508. Bibcode:1962ITED....9..507A. doi:10.1109/T-ED.1962.15048. ISSN 0096-2430. S2CID 51637380.
Archer, R. J.; Atalla, M. M. (January 1963). "Metals Contacts on Cleaved Silicon Surfaces". Annals of the New York Academy of Sciences. 101 (3): 697–708. Bibcode:1963NYASA.101..697A. doi:10.1111/j.1749-6632.1963.tb54926.x. ISSN 1749-6632. S2CID 84306885.

espacenet.com

worldwide.espacenet.com

US 1745175 "Method and apparatus for controlling electric current" first filed in Canada on 22.10.1925.
US 755840, Bose, Jagadis Chunder, "Detector for electrical disturbances", published September 30, 1901, issued March 29, 1904

harvard.edu

ui.adsabs.harvard.edu

Bardeen, J. (1947). "Surface States and Rectification at a Metal Semi-Conductor Contact". Physical Review. 71 (10): 717–727. Bibcode:1947PhRv...71..717B. doi:10.1103/PhysRev.71.717.
Tung, R. (2001). "Formation of an electric dipole at metal-semiconductor interfaces". Physical Review B. 64 (20): 205310. Bibcode:2001PhRvB..64t5310T. doi:10.1103/PhysRevB.64.205310.
Nishimura, T.; Kita, K.; Toriumi, A. (2007). "Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface". Applied Physics Letters. 91 (12): 123123. Bibcode:2007ApPhL..91l3123N. doi:10.1063/1.2789701.
Lieten, R. R.; Degroote, S.; Kuijk, M.; Borghs, G. (2008). "Ohmic contact formation on n-type Ge". Applied Physics Letters. 92 (2): 022106. Bibcode:2008ApPhL..92b2106L. doi:10.1063/1.2831918.
Braun, F. (1874), "Ueber die Stromleitung durch Schwefelmetalle" [On current conduction through metal sulfides], Annalen der Physik und Chemie (in German), 153 (4): 556–563, Bibcode:1875AnP...229..556B, doi:10.1002/andp.18752291207
Pierce, G. W. (1907). "Crystal Rectifiers for Electric Currents and Electric Oscillations. Part I. Carborundum". Physical Review. Series I. 25 (1): 31–60. Bibcode:1907PhRvI..25...31P. doi:10.1103/PhysRevSeriesI.25.31.
Fuller, C. S.; Ditzenberger, J. A. (1953-07-01). "Diffusion of Lithium into Germanium and Silicon". Physical Review. 91 (1): 193. Bibcode:1953PhRv...91..193F. doi:10.1103/PhysRev.91.193. ISSN 0031-899X.
Fuller, C. S.; Struthers, J. D.; Ditzenberger, J. A.; Wolfstirn, K. B. (1954-03-15). "Diffusivity and Solubility of Copper in Germanium". Physical Review. 93 (6): 1182–1189. Bibcode:1954PhRv...93.1182F. doi:10.1103/PhysRev.93.1182. ISSN 0031-899X.
Fuller, C. S.; Ditzenberger, J. A. (1956-05-01). "Diffusion of Donor and Acceptor Elements in Silicon". Journal of Applied Physics. 27 (5): 544–553. Bibcode:1956JAP....27..544F. doi:10.1063/1.1722419. ISSN 0021-8979.
Fuller, C. S.; Whelan, J. M. (1958-08-01). "Diffusion, solubility, and electrical behavior of copper in gallium arsenide". Journal of Physics and Chemistry of Solids. 6 (2): 173–177. Bibcode:1958JPCS....6..173F. doi:10.1016/0022-3697(58)90091-X. ISSN 0022-3697.
Miller, R. C.; Savage, A. (1956-12-01). "Diffusion of Aluminum in Single Crystal Silicon". Journal of Applied Physics. 27 (12): 1430–1432. Bibcode:1956JAP....27.1430M. doi:10.1063/1.1722283. ISSN 0021-8979.
Atalla, M.; Kahng, D. (November 1962). "A new "Hot electron" triode structure with semiconductor-metal emitter". IRE Transactions on Electron Devices. 9 (6): 507–508. Bibcode:1962ITED....9..507A. doi:10.1109/T-ED.1962.15048. ISSN 0096-2430. S2CID 51637380.
Archer, R. J.; Atalla, M. M. (January 1963). "Metals Contacts on Cleaved Silicon Surfaces". Annals of the New York Academy of Sciences. 101 (3): 697–708. Bibcode:1963NYASA.101..697A. doi:10.1111/j.1749-6632.1963.tb54926.x. ISSN 1749-6632. S2CID 84306885.

iop.org

iopscience.iop.org

Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of The Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of The Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.

nasa.gov

ntrs.nasa.gov

Siegel, Peter H.; Kerr, Anthony R.; Hwang, Wei (March 1984). NASA Technical Paper 2287: Topics in the Optimization of Millimeter-Wave Mixers (PDF). NASA. pp. 12–13.

patents.google.com

US3475234A, Kerwin, Robert E.; Klein, Donald L. & Sarace, John C., "Method for making mis structures", issued 1969-10-28

sciencedirect.com

Fuller, C. S.; Whelan, J. M. (1958-08-01). "Diffusion, solubility, and electrical behavior of copper in gallium arsenide". Journal of Physics and Chemistry of Solids. 6 (2): 173–177. Bibcode:1958JPCS....6..173F. doi:10.1016/0022-3697(58)90091-X. ISSN 0022-3697.

semanticscholar.org

api.semanticscholar.org

Atalla, M.; Kahng, D. (November 1962). "A new "Hot electron" triode structure with semiconductor-metal emitter". IRE Transactions on Electron Devices. 9 (6): 507–508. Bibcode:1962ITED....9..507A. doi:10.1109/T-ED.1962.15048. ISSN 0096-2430. S2CID 51637380.
Archer, R. J.; Atalla, M. M. (January 1963). "Metals Contacts on Cleaved Silicon Surfaces". Annals of the New York Academy of Sciences. 101 (3): 697–708. Bibcode:1963NYASA.101..697A. doi:10.1111/j.1749-6632.1963.tb54926.x. ISSN 1749-6632. S2CID 84306885.

worldcat.org

search.worldcat.org

Sze, S. M. Ng, Kwok K. (2007). Physics of semiconductor devices. John Wiley & Sons. ISBN 978-0-471-14323-9. OCLC 488586029.{{cite book}}: CS1 maint: multiple names: authors list (link)
Fuller, C. S.; Ditzenberger, J. A. (1953-07-01). "Diffusion of Lithium into Germanium and Silicon". Physical Review. 91 (1): 193. Bibcode:1953PhRv...91..193F. doi:10.1103/PhysRev.91.193. ISSN 0031-899X.
Fuller, C. S.; Struthers, J. D.; Ditzenberger, J. A.; Wolfstirn, K. B. (1954-03-15). "Diffusivity and Solubility of Copper in Germanium". Physical Review. 93 (6): 1182–1189. Bibcode:1954PhRv...93.1182F. doi:10.1103/PhysRev.93.1182. ISSN 0031-899X.
Fuller, C. S.; Ditzenberger, J. A. (1956-05-01). "Diffusion of Donor and Acceptor Elements in Silicon". Journal of Applied Physics. 27 (5): 544–553. Bibcode:1956JAP....27..544F. doi:10.1063/1.1722419. ISSN 0021-8979.
Fuller, C. S.; Whelan, J. M. (1958-08-01). "Diffusion, solubility, and electrical behavior of copper in gallium arsenide". Journal of Physics and Chemistry of Solids. 6 (2): 173–177. Bibcode:1958JPCS....6..173F. doi:10.1016/0022-3697(58)90091-X. ISSN 0022-3697.
Miller, R. C.; Savage, A. (1956-12-01). "Diffusion of Aluminum in Single Crystal Silicon". Journal of Applied Physics. 27 (12): 1430–1432. Bibcode:1956JAP....27.1430M. doi:10.1063/1.1722283. ISSN 0021-8979.
Atalla, M.; Kahng, D. (November 1962). "A new "Hot electron" triode structure with semiconductor-metal emitter". IRE Transactions on Electron Devices. 9 (6): 507–508. Bibcode:1962ITED....9..507A. doi:10.1109/T-ED.1962.15048. ISSN 0096-2430. S2CID 51637380.
Archer, R. J.; Atalla, M. M. (January 1963). "Metals Contacts on Cleaved Silicon Surfaces". Annals of the New York Academy of Sciences. 101 (3): 697–708. Bibcode:1963NYASA.101..697A. doi:10.1111/j.1749-6632.1963.tb54926.x. ISSN 1749-6632. S2CID 84306885.

worldcat.org

Sze, S. M. Ng, Kwok K. (2007). Physics of semiconductor devices. John Wiley & Sons. ISBN 978-0-471-14323-9. OCLC 488586029.{{cite book}}: CS1 maint: multiple names: authors list (link)

zenodo.org

Lieten, R. R.; Degroote, S.; Kuijk, M.; Borghs, G. (2008). "Ohmic contact formation on n-type Ge". Applied Physics Letters. 92 (2): 022106. Bibcode:2008ApPhL..92b2106L. doi:10.1063/1.2831918.
Pierce, G. W. (1907). "Crystal Rectifiers for Electric Currents and Electric Oscillations. Part I. Carborundum". Physical Review. Series I. 25 (1): 31–60. Bibcode:1907PhRvI..25...31P. doi:10.1103/PhysRevSeriesI.25.31.