Milton Feng (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Milton Feng" in English language version.

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Snodgrass, William; Hafez, Walid; Harff, Nathan; Feng, Milton (2006). "Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTS) Experimentally Demonstrating f_T = 765 GHZ at 25 °C Increasing to f_T = 845 GHZ at -55 °C". 2006 International Electron Devices Meeting (IEDM '06). 2006 IEEE International Electron Devices Meeting. December 10–13, 2006. San Francisco, CA. pp. 1–4. doi:10.1109/IEDM.2006.346853. ISBN 1-4244-0438-X. S2CID 27243567.

"Milton Feng". Electrical & Computing Engineering. University of Illinois. Retrieved 2020-04-06.
Communications, Grainger Engineering Office of Marketing and. "Milton Feng". ece.illinois.edu. Retrieved 2024-08-16.

Kloeppel, James E. (Dec 11, 2006). "World's fastest transistor approaches goal of terahertz device" (Press release). Champaign, Ill.: University of Illinois at Urbana–Champaign. University of Illinois News Bureau. Retrieved 2018-02-21.
Kloeppel, James E. "New light-emitting transistor could revolutionize electronics industry". news.illinois.edu. Retrieved 2020-04-06.

Snodgrass, William; Hafez, Walid; Harff, Nathan; Feng, Milton (2006). "Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTS) Experimentally Demonstrating f_T = 765 GHZ at 25 °C Increasing to f_T = 845 GHZ at -55 °C". 2006 International Electron Devices Meeting (IEDM '06). 2006 IEEE International Electron Devices Meeting. December 10–13, 2006. San Francisco, CA. pp. 1–4. doi:10.1109/IEDM.2006.346853. ISBN 1-4244-0438-X. S2CID 27243567.