Mott insulator (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Mott insulator" in English language version.

refsWebsite

Global rank English rank

20doi.org

2^nd place

19harvard.edu

18^th place

17^th place

12worldcat.org

5^th place

11arxiv.org

69^th place

59^th place

11semanticscholar.org

11^th place

8^th place

6nih.gov

4^th place

1archive.org

6^th place

1psu.edu

207^th place

136^th place

1jstor.org

26^th place

20^th place

1science.org

1,160^th place

737^th place

1espacenet.com

800^th place

676^th place

archive.org

Kittel, Charles (2005), Introduction to Solid State Physics (8th ed.), John Wiley & Sons, p. 407–409, ISBN 0-471-41526-X

arxiv.org

Mello, Isys F.; Squillante, Lucas; Gomes, Gabriel O.; Seridonio, Antonio C.; De Souza, Mariano (2020). "Griffiths-like phase close to the Mott transition". Journal of Applied Physics. 128 (22): 225102. arXiv:2003.11866. Bibcode:2020JAP...128v5102M. doi:10.1063/5.0018604. S2CID 214667402.
Phillips, Philip (2006). "Mottness". Annals of Physics. 321 (7). Elsevier BV: 1634–1650. arXiv:cond-mat/0702348. Bibcode:2006AnPhy.321.1634P. doi:10.1016/j.aop.2006.04.003. ISSN 0003-4916.
Stanescu, Tudor D.; Phillips, Philip; Choy, Ting-Pong (2007-03-06). "Theory of the Luttinger surface in doped Mott insulators". Physical Review B. 75 (10). American Physical Society (APS): 104503. arXiv:cond-mat/0602280. Bibcode:2007PhRvB..75j4503S. doi:10.1103/physrevb.75.104503. ISSN 1098-0121. S2CID 119430461.
Leigh, Robert G.; Phillips, Philip; Choy, Ting-Pong (2007-07-25). "Hidden Charge 2e Boson in Doped Mott Insulators". Physical Review Letters. 99 (4): 046404. arXiv:cond-mat/0612130v3. Bibcode:2007PhRvL..99d6404L. doi:10.1103/physrevlett.99.046404. ISSN 0031-9007. PMID 17678382. S2CID 37595030.
Choy, Ting-Pong; Leigh, Robert G.; Phillips, Philip; Powell, Philip D. (2008-01-17). "Exact integration of the high energy scale in doped Mott insulators". Physical Review B. 77 (1). American Physical Society (APS): 014512. arXiv:0707.1554. Bibcode:2008PhRvB..77a4512C. doi:10.1103/physrevb.77.014512. ISSN 1098-0121. S2CID 32553272.
Stanescu, Tudor D.; Phillips, Philip (2003-07-02). "Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap". Physical Review Letters. 91 (1): 017002. arXiv:cond-mat/0209118. Bibcode:2003PhRvL..91a7002S. doi:10.1103/physrevlett.91.017002. ISSN 0031-9007. PMID 12906566. S2CID 5993172.
Kohsaka, Y.; Taylor, C.; Wahl, P.; et al. (August 28, 2008). "How Cooper pairs vanish approaching the Mott insulator in Bi₂Sr₂CaCu₂O_8+δ". Nature. 454 (7208): 1072–1078. arXiv:0808.3816. Bibcode:2008Natur.454.1072K. doi:10.1038/nature07243. PMID 18756248. S2CID 205214473.
Hasan, M. Z.; Isaacs, E. D.; Shen, Z.-X.; Miller, L. L.; Tsutsui, K.; Tohyama, T.; Maekawa, S. (2000-06-09). "Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering". Science. 288 (5472): 1811–1814. arXiv:cond-mat/0102489. Bibcode:2000Sci...288.1811H. doi:10.1126/science.288.5472.1811. ISSN 0036-8075. PMID 10846160. S2CID 2581764.
Hasan, M. Z.; Montano, P. A.; Isaacs, E. D.; Shen, Z.-X.; Eisaki, H.; Sinha, S. K.; Islam, Z.; Motoyama, N.; Uchida, S. (2002-04-16). "Momentum-Resolved Charge Excitations in a Prototype One-Dimensional Mott Insulator". Physical Review Letters. 88 (17): 177403. arXiv:cond-mat/0102485. Bibcode:2002PhRvL..88q7403H. doi:10.1103/PhysRevLett.88.177403. PMID 12005784. S2CID 30809135.
Zhou, You; Ramanathan, Shriram (2013-01-01). "Correlated Electron Materials and Field Effect Transistors for Logic: A Review". Critical Reviews in Solid State and Materials Sciences. 38 (4): 286–317. arXiv:1212.2684. Bibcode:2013CRSSM..38..286Z. doi:10.1080/10408436.2012.719131. ISSN 1040-8436. S2CID 93921400.
Son, Junwoo; et al. (2011-10-18). "A heterojunction modulation-doped Mott transistor". Applied Physics Letters. 110 (8): 084503–084503–4. arXiv:1109.5299. Bibcode:2011JAP...110h4503S. doi:10.1063/1.3651612. S2CID 27583830.

doi.org

de Boer, J. H.; Verwey, E. J. W. (1937). "Semi-conductors with partially and with completely filled 3d-lattice bands". Proceedings of the Physical Society. 49 (4S): 59. Bibcode:1937PPS....49...59B. doi:10.1088/0959-5309/49/4S/307.
Mott, N. F.; Peierls, R. (1937). "Discussion of the paper by de Boer and Verwey". Proceedings of the Physical Society. 49 (4S): 72. Bibcode:1937PPS....49...72M. doi:10.1088/0959-5309/49/4S/308.
Mott, N. F. (1949). "The basis of the electron theory of metals, with special reference to the transition metals". Proceedings of the Physical Society. Series A. 62 (7): 416–422. Bibcode:1949PPSA...62..416M. doi:10.1088/0370-1298/62/7/303.
MOTT, N. F. (1 September 1968). "Metal-Insulator Transition". Reviews of Modern Physics. 40 (4). American Physical Society (APS): 677–683. Bibcode:1968RvMP...40..677M. doi:10.1103/revmodphys.40.677. ISSN 0034-6861.
M. Imada; A. Fujimori; Y. Tojura (1998). "Metal-Insulator Transitions". Rev. Mod. Phys. 70 (4): 1039. Bibcode:1998RvMP...70.1039I. doi:10.1103/RevModPhys.70.1039.
Mello, Isys F.; Squillante, Lucas; Gomes, Gabriel O.; Seridonio, Antonio C.; De Souza, Mariano (2020). "Griffiths-like phase close to the Mott transition". Journal of Applied Physics. 128 (22): 225102. arXiv:2003.11866. Bibcode:2020JAP...128v5102M. doi:10.1063/5.0018604. S2CID 214667402.
Phillips, Philip (2006). "Mottness". Annals of Physics. 321 (7). Elsevier BV: 1634–1650. arXiv:cond-mat/0702348. Bibcode:2006AnPhy.321.1634P. doi:10.1016/j.aop.2006.04.003. ISSN 0003-4916.
Meinders, M. B. J.; Eskes, H.; Sawatzky, G. A. (1993-08-01). "Spectral-weight transfer: Breakdown of low-energy-scale sum rules in correlated systems". Physical Review B. 48 (6). American Physical Society (APS): 3916–3926. Bibcode:1993PhRvB..48.3916M. doi:10.1103/physrevb.48.3916. ISSN 0163-1829. PMID 10008840.
Stanescu, Tudor D.; Phillips, Philip; Choy, Ting-Pong (2007-03-06). "Theory of the Luttinger surface in doped Mott insulators". Physical Review B. 75 (10). American Physical Society (APS): 104503. arXiv:cond-mat/0602280. Bibcode:2007PhRvB..75j4503S. doi:10.1103/physrevb.75.104503. ISSN 1098-0121. S2CID 119430461.
Leigh, Robert G.; Phillips, Philip; Choy, Ting-Pong (2007-07-25). "Hidden Charge 2e Boson in Doped Mott Insulators". Physical Review Letters. 99 (4): 046404. arXiv:cond-mat/0612130v3. Bibcode:2007PhRvL..99d6404L. doi:10.1103/physrevlett.99.046404. ISSN 0031-9007. PMID 17678382. S2CID 37595030.
Choy, Ting-Pong; Leigh, Robert G.; Phillips, Philip; Powell, Philip D. (2008-01-17). "Exact integration of the high energy scale in doped Mott insulators". Physical Review B. 77 (1). American Physical Society (APS): 014512. arXiv:0707.1554. Bibcode:2008PhRvB..77a4512C. doi:10.1103/physrevb.77.014512. ISSN 1098-0121. S2CID 32553272.
Stanescu, Tudor D.; Phillips, Philip (2003-07-02). "Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap". Physical Review Letters. 91 (1): 017002. arXiv:cond-mat/0209118. Bibcode:2003PhRvL..91a7002S. doi:10.1103/physrevlett.91.017002. ISSN 0031-9007. PMID 12906566. S2CID 5993172.
Cyrot, M. (1972). "Theory of mott transition : Applications to transition metal oxides". Journal de Physique. 33 (1). EDP Sciences: 125–134. CiteSeerX 10.1.1.463.1403. doi:10.1051/jphys:01972003301012500. ISSN 0302-0738.
Bose, D. N.; B. Seishu; G. Parthasarathy; E. S. R. Gopal (1986). "Doping Dependence of Semiconductor-Metal Transition in InP at High Pressures". Proceedings of the Royal Society A. 405 (1829): 345–353. Bibcode:1986RSPSA.405..345B. doi:10.1098/rspa.1986.0057. JSTOR 2397982. S2CID 136711168.
Kohsaka, Y.; Taylor, C.; Wahl, P.; et al. (August 28, 2008). "How Cooper pairs vanish approaching the Mott insulator in Bi₂Sr₂CaCu₂O_8+δ". Nature. 454 (7208): 1072–1078. arXiv:0808.3816. Bibcode:2008Natur.454.1072K. doi:10.1038/nature07243. PMID 18756248. S2CID 205214473.
Markiewicz, R. S.; Hasan, M. Z.; Bansil, A. (2008-03-25). "Acoustic plasmons and doping evolution of Mott physics in resonant inelastic x-ray scattering from cuprate superconductors". Physical Review B. 77 (9): 094518. Bibcode:2008PhRvB..77i4518M. doi:10.1103/PhysRevB.77.094518.
Hasan, M. Z.; Isaacs, E. D.; Shen, Z.-X.; Miller, L. L.; Tsutsui, K.; Tohyama, T.; Maekawa, S. (2000-06-09). "Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering". Science. 288 (5472): 1811–1814. arXiv:cond-mat/0102489. Bibcode:2000Sci...288.1811H. doi:10.1126/science.288.5472.1811. ISSN 0036-8075. PMID 10846160. S2CID 2581764.
Hasan, M. Z.; Montano, P. A.; Isaacs, E. D.; Shen, Z.-X.; Eisaki, H.; Sinha, S. K.; Islam, Z.; Motoyama, N.; Uchida, S. (2002-04-16). "Momentum-Resolved Charge Excitations in a Prototype One-Dimensional Mott Insulator". Physical Review Letters. 88 (17): 177403. arXiv:cond-mat/0102485. Bibcode:2002PhRvL..88q7403H. doi:10.1103/PhysRevLett.88.177403. PMID 12005784. S2CID 30809135.
Zhou, You; Ramanathan, Shriram (2013-01-01). "Correlated Electron Materials and Field Effect Transistors for Logic: A Review". Critical Reviews in Solid State and Materials Sciences. 38 (4): 286–317. arXiv:1212.2684. Bibcode:2013CRSSM..38..286Z. doi:10.1080/10408436.2012.719131. ISSN 1040-8436. S2CID 93921400.
Son, Junwoo; et al. (2011-10-18). "A heterojunction modulation-doped Mott transistor". Applied Physics Letters. 110 (8): 084503–084503–4. arXiv:1109.5299. Bibcode:2011JAP...110h4503S. doi:10.1063/1.3651612. S2CID 27583830.

espacenet.com

worldwide.espacenet.com

US patent 6121642, Newns, Dennis, "Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications", published 2000

harvard.edu

ui.adsabs.harvard.edu

de Boer, J. H.; Verwey, E. J. W. (1937). "Semi-conductors with partially and with completely filled 3d-lattice bands". Proceedings of the Physical Society. 49 (4S): 59. Bibcode:1937PPS....49...59B. doi:10.1088/0959-5309/49/4S/307.
Mott, N. F.; Peierls, R. (1937). "Discussion of the paper by de Boer and Verwey". Proceedings of the Physical Society. 49 (4S): 72. Bibcode:1937PPS....49...72M. doi:10.1088/0959-5309/49/4S/308.
Mott, N. F. (1949). "The basis of the electron theory of metals, with special reference to the transition metals". Proceedings of the Physical Society. Series A. 62 (7): 416–422. Bibcode:1949PPSA...62..416M. doi:10.1088/0370-1298/62/7/303.
MOTT, N. F. (1 September 1968). "Metal-Insulator Transition". Reviews of Modern Physics. 40 (4). American Physical Society (APS): 677–683. Bibcode:1968RvMP...40..677M. doi:10.1103/revmodphys.40.677. ISSN 0034-6861.
M. Imada; A. Fujimori; Y. Tojura (1998). "Metal-Insulator Transitions". Rev. Mod. Phys. 70 (4): 1039. Bibcode:1998RvMP...70.1039I. doi:10.1103/RevModPhys.70.1039.
Mello, Isys F.; Squillante, Lucas; Gomes, Gabriel O.; Seridonio, Antonio C.; De Souza, Mariano (2020). "Griffiths-like phase close to the Mott transition". Journal of Applied Physics. 128 (22): 225102. arXiv:2003.11866. Bibcode:2020JAP...128v5102M. doi:10.1063/5.0018604. S2CID 214667402.
Phillips, Philip (2006). "Mottness". Annals of Physics. 321 (7). Elsevier BV: 1634–1650. arXiv:cond-mat/0702348. Bibcode:2006AnPhy.321.1634P. doi:10.1016/j.aop.2006.04.003. ISSN 0003-4916.
Meinders, M. B. J.; Eskes, H.; Sawatzky, G. A. (1993-08-01). "Spectral-weight transfer: Breakdown of low-energy-scale sum rules in correlated systems". Physical Review B. 48 (6). American Physical Society (APS): 3916–3926. Bibcode:1993PhRvB..48.3916M. doi:10.1103/physrevb.48.3916. ISSN 0163-1829. PMID 10008840.
Stanescu, Tudor D.; Phillips, Philip; Choy, Ting-Pong (2007-03-06). "Theory of the Luttinger surface in doped Mott insulators". Physical Review B. 75 (10). American Physical Society (APS): 104503. arXiv:cond-mat/0602280. Bibcode:2007PhRvB..75j4503S. doi:10.1103/physrevb.75.104503. ISSN 1098-0121. S2CID 119430461.
Leigh, Robert G.; Phillips, Philip; Choy, Ting-Pong (2007-07-25). "Hidden Charge 2e Boson in Doped Mott Insulators". Physical Review Letters. 99 (4): 046404. arXiv:cond-mat/0612130v3. Bibcode:2007PhRvL..99d6404L. doi:10.1103/physrevlett.99.046404. ISSN 0031-9007. PMID 17678382. S2CID 37595030.
Choy, Ting-Pong; Leigh, Robert G.; Phillips, Philip; Powell, Philip D. (2008-01-17). "Exact integration of the high energy scale in doped Mott insulators". Physical Review B. 77 (1). American Physical Society (APS): 014512. arXiv:0707.1554. Bibcode:2008PhRvB..77a4512C. doi:10.1103/physrevb.77.014512. ISSN 1098-0121. S2CID 32553272.
Stanescu, Tudor D.; Phillips, Philip (2003-07-02). "Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap". Physical Review Letters. 91 (1): 017002. arXiv:cond-mat/0209118. Bibcode:2003PhRvL..91a7002S. doi:10.1103/physrevlett.91.017002. ISSN 0031-9007. PMID 12906566. S2CID 5993172.
Bose, D. N.; B. Seishu; G. Parthasarathy; E. S. R. Gopal (1986). "Doping Dependence of Semiconductor-Metal Transition in InP at High Pressures". Proceedings of the Royal Society A. 405 (1829): 345–353. Bibcode:1986RSPSA.405..345B. doi:10.1098/rspa.1986.0057. JSTOR 2397982. S2CID 136711168.
Kohsaka, Y.; Taylor, C.; Wahl, P.; et al. (August 28, 2008). "How Cooper pairs vanish approaching the Mott insulator in Bi₂Sr₂CaCu₂O_8+δ". Nature. 454 (7208): 1072–1078. arXiv:0808.3816. Bibcode:2008Natur.454.1072K. doi:10.1038/nature07243. PMID 18756248. S2CID 205214473.
Markiewicz, R. S.; Hasan, M. Z.; Bansil, A. (2008-03-25). "Acoustic plasmons and doping evolution of Mott physics in resonant inelastic x-ray scattering from cuprate superconductors". Physical Review B. 77 (9): 094518. Bibcode:2008PhRvB..77i4518M. doi:10.1103/PhysRevB.77.094518.
Hasan, M. Z.; Isaacs, E. D.; Shen, Z.-X.; Miller, L. L.; Tsutsui, K.; Tohyama, T.; Maekawa, S. (2000-06-09). "Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering". Science. 288 (5472): 1811–1814. arXiv:cond-mat/0102489. Bibcode:2000Sci...288.1811H. doi:10.1126/science.288.5472.1811. ISSN 0036-8075. PMID 10846160. S2CID 2581764.
Hasan, M. Z.; Montano, P. A.; Isaacs, E. D.; Shen, Z.-X.; Eisaki, H.; Sinha, S. K.; Islam, Z.; Motoyama, N.; Uchida, S. (2002-04-16). "Momentum-Resolved Charge Excitations in a Prototype One-Dimensional Mott Insulator". Physical Review Letters. 88 (17): 177403. arXiv:cond-mat/0102485. Bibcode:2002PhRvL..88q7403H. doi:10.1103/PhysRevLett.88.177403. PMID 12005784. S2CID 30809135.
Zhou, You; Ramanathan, Shriram (2013-01-01). "Correlated Electron Materials and Field Effect Transistors for Logic: A Review". Critical Reviews in Solid State and Materials Sciences. 38 (4): 286–317. arXiv:1212.2684. Bibcode:2013CRSSM..38..286Z. doi:10.1080/10408436.2012.719131. ISSN 1040-8436. S2CID 93921400.
Son, Junwoo; et al. (2011-10-18). "A heterojunction modulation-doped Mott transistor". Applied Physics Letters. 110 (8): 084503–084503–4. arXiv:1109.5299. Bibcode:2011JAP...110h4503S. doi:10.1063/1.3651612. S2CID 27583830.

jstor.org

Bose, D. N.; B. Seishu; G. Parthasarathy; E. S. R. Gopal (1986). "Doping Dependence of Semiconductor-Metal Transition in InP at High Pressures". Proceedings of the Royal Society A. 405 (1829): 345–353. Bibcode:1986RSPSA.405..345B. doi:10.1098/rspa.1986.0057. JSTOR 2397982. S2CID 136711168.

nih.gov

pubmed.ncbi.nlm.nih.gov

Meinders, M. B. J.; Eskes, H.; Sawatzky, G. A. (1993-08-01). "Spectral-weight transfer: Breakdown of low-energy-scale sum rules in correlated systems". Physical Review B. 48 (6). American Physical Society (APS): 3916–3926. Bibcode:1993PhRvB..48.3916M. doi:10.1103/physrevb.48.3916. ISSN 0163-1829. PMID 10008840.
Leigh, Robert G.; Phillips, Philip; Choy, Ting-Pong (2007-07-25). "Hidden Charge 2e Boson in Doped Mott Insulators". Physical Review Letters. 99 (4): 046404. arXiv:cond-mat/0612130v3. Bibcode:2007PhRvL..99d6404L. doi:10.1103/physrevlett.99.046404. ISSN 0031-9007. PMID 17678382. S2CID 37595030.
Stanescu, Tudor D.; Phillips, Philip (2003-07-02). "Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap". Physical Review Letters. 91 (1): 017002. arXiv:cond-mat/0209118. Bibcode:2003PhRvL..91a7002S. doi:10.1103/physrevlett.91.017002. ISSN 0031-9007. PMID 12906566. S2CID 5993172.
Kohsaka, Y.; Taylor, C.; Wahl, P.; et al. (August 28, 2008). "How Cooper pairs vanish approaching the Mott insulator in Bi₂Sr₂CaCu₂O_8+δ". Nature. 454 (7208): 1072–1078. arXiv:0808.3816. Bibcode:2008Natur.454.1072K. doi:10.1038/nature07243. PMID 18756248. S2CID 205214473.
Hasan, M. Z.; Isaacs, E. D.; Shen, Z.-X.; Miller, L. L.; Tsutsui, K.; Tohyama, T.; Maekawa, S. (2000-06-09). "Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering". Science. 288 (5472): 1811–1814. arXiv:cond-mat/0102489. Bibcode:2000Sci...288.1811H. doi:10.1126/science.288.5472.1811. ISSN 0036-8075. PMID 10846160. S2CID 2581764.
Hasan, M. Z.; Montano, P. A.; Isaacs, E. D.; Shen, Z.-X.; Eisaki, H.; Sinha, S. K.; Islam, Z.; Motoyama, N.; Uchida, S. (2002-04-16). "Momentum-Resolved Charge Excitations in a Prototype One-Dimensional Mott Insulator". Physical Review Letters. 88 (17): 177403. arXiv:cond-mat/0102485. Bibcode:2002PhRvL..88q7403H. doi:10.1103/PhysRevLett.88.177403. PMID 12005784. S2CID 30809135.

psu.edu

citeseerx.ist.psu.edu

Cyrot, M. (1972). "Theory of mott transition : Applications to transition metal oxides". Journal de Physique. 33 (1). EDP Sciences: 125–134. CiteSeerX 10.1.1.463.1403. doi:10.1051/jphys:01972003301012500. ISSN 0302-0738.

science.org

Hasan, M. Z.; Isaacs, E. D.; Shen, Z.-X.; Miller, L. L.; Tsutsui, K.; Tohyama, T.; Maekawa, S. (2000-06-09). "Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering". Science. 288 (5472): 1811–1814. arXiv:cond-mat/0102489. Bibcode:2000Sci...288.1811H. doi:10.1126/science.288.5472.1811. ISSN 0036-8075. PMID 10846160. S2CID 2581764.

semanticscholar.org

api.semanticscholar.org

Mello, Isys F.; Squillante, Lucas; Gomes, Gabriel O.; Seridonio, Antonio C.; De Souza, Mariano (2020). "Griffiths-like phase close to the Mott transition". Journal of Applied Physics. 128 (22): 225102. arXiv:2003.11866. Bibcode:2020JAP...128v5102M. doi:10.1063/5.0018604. S2CID 214667402.
Stanescu, Tudor D.; Phillips, Philip; Choy, Ting-Pong (2007-03-06). "Theory of the Luttinger surface in doped Mott insulators". Physical Review B. 75 (10). American Physical Society (APS): 104503. arXiv:cond-mat/0602280. Bibcode:2007PhRvB..75j4503S. doi:10.1103/physrevb.75.104503. ISSN 1098-0121. S2CID 119430461.
Leigh, Robert G.; Phillips, Philip; Choy, Ting-Pong (2007-07-25). "Hidden Charge 2e Boson in Doped Mott Insulators". Physical Review Letters. 99 (4): 046404. arXiv:cond-mat/0612130v3. Bibcode:2007PhRvL..99d6404L. doi:10.1103/physrevlett.99.046404. ISSN 0031-9007. PMID 17678382. S2CID 37595030.
Choy, Ting-Pong; Leigh, Robert G.; Phillips, Philip; Powell, Philip D. (2008-01-17). "Exact integration of the high energy scale in doped Mott insulators". Physical Review B. 77 (1). American Physical Society (APS): 014512. arXiv:0707.1554. Bibcode:2008PhRvB..77a4512C. doi:10.1103/physrevb.77.014512. ISSN 1098-0121. S2CID 32553272.
Stanescu, Tudor D.; Phillips, Philip (2003-07-02). "Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap". Physical Review Letters. 91 (1): 017002. arXiv:cond-mat/0209118. Bibcode:2003PhRvL..91a7002S. doi:10.1103/physrevlett.91.017002. ISSN 0031-9007. PMID 12906566. S2CID 5993172.
Bose, D. N.; B. Seishu; G. Parthasarathy; E. S. R. Gopal (1986). "Doping Dependence of Semiconductor-Metal Transition in InP at High Pressures". Proceedings of the Royal Society A. 405 (1829): 345–353. Bibcode:1986RSPSA.405..345B. doi:10.1098/rspa.1986.0057. JSTOR 2397982. S2CID 136711168.
Kohsaka, Y.; Taylor, C.; Wahl, P.; et al. (August 28, 2008). "How Cooper pairs vanish approaching the Mott insulator in Bi₂Sr₂CaCu₂O_8+δ". Nature. 454 (7208): 1072–1078. arXiv:0808.3816. Bibcode:2008Natur.454.1072K. doi:10.1038/nature07243. PMID 18756248. S2CID 205214473.
Hasan, M. Z.; Isaacs, E. D.; Shen, Z.-X.; Miller, L. L.; Tsutsui, K.; Tohyama, T.; Maekawa, S. (2000-06-09). "Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering". Science. 288 (5472): 1811–1814. arXiv:cond-mat/0102489. Bibcode:2000Sci...288.1811H. doi:10.1126/science.288.5472.1811. ISSN 0036-8075. PMID 10846160. S2CID 2581764.
Hasan, M. Z.; Montano, P. A.; Isaacs, E. D.; Shen, Z.-X.; Eisaki, H.; Sinha, S. K.; Islam, Z.; Motoyama, N.; Uchida, S. (2002-04-16). "Momentum-Resolved Charge Excitations in a Prototype One-Dimensional Mott Insulator". Physical Review Letters. 88 (17): 177403. arXiv:cond-mat/0102485. Bibcode:2002PhRvL..88q7403H. doi:10.1103/PhysRevLett.88.177403. PMID 12005784. S2CID 30809135.
Zhou, You; Ramanathan, Shriram (2013-01-01). "Correlated Electron Materials and Field Effect Transistors for Logic: A Review". Critical Reviews in Solid State and Materials Sciences. 38 (4): 286–317. arXiv:1212.2684. Bibcode:2013CRSSM..38..286Z. doi:10.1080/10408436.2012.719131. ISSN 1040-8436. S2CID 93921400.
Son, Junwoo; et al. (2011-10-18). "A heterojunction modulation-doped Mott transistor". Applied Physics Letters. 110 (8): 084503–084503–4. arXiv:1109.5299. Bibcode:2011JAP...110h4503S. doi:10.1063/1.3651612. S2CID 27583830.

worldcat.org

search.worldcat.org

Fazekas, Patrik (2008). Lecture notes on electron correlation and magnetism. World Scientific. pp. 147–150. ISBN 978-981-02-2474-5. OCLC 633481726.
MOTT, N. F. (1 September 1968). "Metal-Insulator Transition". Reviews of Modern Physics. 40 (4). American Physical Society (APS): 677–683. Bibcode:1968RvMP...40..677M. doi:10.1103/revmodphys.40.677. ISSN 0034-6861.
Phillips, Philip (2006). "Mottness". Annals of Physics. 321 (7). Elsevier BV: 1634–1650. arXiv:cond-mat/0702348. Bibcode:2006AnPhy.321.1634P. doi:10.1016/j.aop.2006.04.003. ISSN 0003-4916.
Meinders, M. B. J.; Eskes, H.; Sawatzky, G. A. (1993-08-01). "Spectral-weight transfer: Breakdown of low-energy-scale sum rules in correlated systems". Physical Review B. 48 (6). American Physical Society (APS): 3916–3926. Bibcode:1993PhRvB..48.3916M. doi:10.1103/physrevb.48.3916. ISSN 0163-1829. PMID 10008840.
Stanescu, Tudor D.; Phillips, Philip; Choy, Ting-Pong (2007-03-06). "Theory of the Luttinger surface in doped Mott insulators". Physical Review B. 75 (10). American Physical Society (APS): 104503. arXiv:cond-mat/0602280. Bibcode:2007PhRvB..75j4503S. doi:10.1103/physrevb.75.104503. ISSN 1098-0121. S2CID 119430461.
Leigh, Robert G.; Phillips, Philip; Choy, Ting-Pong (2007-07-25). "Hidden Charge 2e Boson in Doped Mott Insulators". Physical Review Letters. 99 (4): 046404. arXiv:cond-mat/0612130v3. Bibcode:2007PhRvL..99d6404L. doi:10.1103/physrevlett.99.046404. ISSN 0031-9007. PMID 17678382. S2CID 37595030.
Choy, Ting-Pong; Leigh, Robert G.; Phillips, Philip; Powell, Philip D. (2008-01-17). "Exact integration of the high energy scale in doped Mott insulators". Physical Review B. 77 (1). American Physical Society (APS): 014512. arXiv:0707.1554. Bibcode:2008PhRvB..77a4512C. doi:10.1103/physrevb.77.014512. ISSN 1098-0121. S2CID 32553272.
Stanescu, Tudor D.; Phillips, Philip (2003-07-02). "Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap". Physical Review Letters. 91 (1): 017002. arXiv:cond-mat/0209118. Bibcode:2003PhRvL..91a7002S. doi:10.1103/physrevlett.91.017002. ISSN 0031-9007. PMID 12906566. S2CID 5993172.
Cyrot, M. (1972). "Theory of mott transition : Applications to transition metal oxides". Journal de Physique. 33 (1). EDP Sciences: 125–134. CiteSeerX 10.1.1.463.1403. doi:10.1051/jphys:01972003301012500. ISSN 0302-0738.
Hasan, M. Z.; Isaacs, E. D.; Shen, Z.-X.; Miller, L. L.; Tsutsui, K.; Tohyama, T.; Maekawa, S. (2000-06-09). "Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering". Science. 288 (5472): 1811–1814. arXiv:cond-mat/0102489. Bibcode:2000Sci...288.1811H. doi:10.1126/science.288.5472.1811. ISSN 0036-8075. PMID 10846160. S2CID 2581764.
Zhou, You; Ramanathan, Shriram (2013-01-01). "Correlated Electron Materials and Field Effect Transistors for Logic: A Review". Critical Reviews in Solid State and Materials Sciences. 38 (4): 286–317. arXiv:1212.2684. Bibcode:2013CRSSM..38..286Z. doi:10.1080/10408436.2012.719131. ISSN 1040-8436. S2CID 93921400.

worldcat.org

Fazekas, Patrik (2008). Lecture notes on electron correlation and magnetism. World Scientific. pp. 147–150. ISBN 978-981-02-2474-5. OCLC 633481726.