Nanocircuitry (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Nanocircuitry" in English language version.

refsWebsite

Global rank English rank

3patents.google.com

1,182^nd place

725^th place

3web.archive.org

1^st place

2doi.org

2^nd place

2semanticscholar.org

11^th place

8^th place

2ieee.org

652^nd place

515^th place

1arstechnica.com

388^th place

265^th place

1trnmag.com

low place

1boingboing.net

3,475^th place

2,144^th place

1berkeley.edu

580^th place

462^nd place

1books.google.com

3^rd place

1intel.com

1,118^th place

825^th place

1highbeam.com

405^th place

256^th place

1handle.net

102^nd place

76^th place

arstechnica.com

Stokes, Jon. ”Understanding Moore's Law","ars technica", 2003-02-20. Retrieved on March 23, 2007.

berkeley.edu

people.eecs.berkeley.edu

Tsu‐Jae King, Liu (June 11, 2012). "FinFET: History, Fundamentals and Future". University of California, Berkeley. Symposium on VLSI Technology Short Course. Retrieved 9 July 2019.

boingboing.net

Pescovitz, David.“Nanowires with built-in transistors Archived 2007-08-03 at the Wayback Machine","boing boing", 2004-07-01. Retrieved on March 23, 2007.

books.google.com

Colinge, J.P. (2008). FinFETs and Other Multi-Gate Transistors. Springer Science & Business Media. p. 11. ISBN 9780387717517.

doi.org

Hisamoto, D.; Kaga, T.; Kawamoto, Y.; Takeda, E. (December 1989). "A fully depleted lean-channel transistor (DELTA)-a novel vertical ultra thin SOI MOSFET". International Technical Digest on Electron Devices Meeting. pp. 833–836. doi:10.1109/IEDM.1989.74182. S2CID 114072236.
Lee, Hyunjin; et al. (2006). "Sub-5nm All-Around Gate FinFET for Ultimate Scaling". 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. pp. 58–59. doi:10.1109/VLSIT.2006.1705215. hdl:10203/698. ISBN 978-1-4244-0005-8. S2CID 26482358.

handle.net

hdl.handle.net

Lee, Hyunjin; et al. (2006). "Sub-5nm All-Around Gate FinFET for Ultimate Scaling". 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. pp. 58–59. doi:10.1109/VLSIT.2006.1705215. hdl:10203/698. ISBN 978-1-4244-0005-8. S2CID 26482358.

highbeam.com

"Still Room at the Bottom (nanometer transistor developed by Yang-kyu Choi from the Korea Advanced Institute of Science and Technology)", Nanoparticle News, 1 April 2006, archived from the original on 6 November 2012, retrieved 24 September 2019

ieee.org

ieeexplore.ieee.org

Davari, Bijan; Ting, Chung-Yu; Ahn, Kie Y.; Basavaiah, S.; Hu, Chao-Kun; Taur, Yuan; Wordeman, Matthew R.; Aboelfotoh, O.; Krusin-Elbaum, L.; Joshi, Rajiv V.; Polcari, Michael R. (1987). "Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide". 1987 Symposium on VLSI Technology. Digest of Technical Papers: 61–62.

ieee.org

"IEEE Andrew S. Grove Award Recipients". IEEE Andrew S. Grove Award. Institute of Electrical and Electronics Engineers. Archived from the original on September 9, 2018. Retrieved 4 July 2019.

intel.com

"The Breakthrough Advantage for FPGAs with Tri-Gate Technology" (PDF). Intel. 2014. Retrieved 4 July 2019.

patents.google.com

semanticscholar.org

api.semanticscholar.org

Hisamoto, D.; Kaga, T.; Kawamoto, Y.; Takeda, E. (December 1989). "A fully depleted lean-channel transistor (DELTA)-a novel vertical ultra thin SOI MOSFET". International Technical Digest on Electron Devices Meeting. pp. 833–836. doi:10.1109/IEDM.1989.74182. S2CID 114072236.
Lee, Hyunjin; et al. (2006). "Sub-5nm All-Around Gate FinFET for Ultimate Scaling". 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. pp. 58–59. doi:10.1109/VLSIT.2006.1705215. hdl:10203/698. ISBN 978-1-4244-0005-8. S2CID 26482358.

trnmag.com

Patch, Kimberly. “Design handles iffy nanocircuits","TRN",2003-03-26. Retrieved on March 23, 2007.

web.archive.org

Pescovitz, David.“Nanowires with built-in transistors Archived 2007-08-03 at the Wayback Machine","boing boing", 2004-07-01. Retrieved on March 23, 2007.
"IEEE Andrew S. Grove Award Recipients". IEEE Andrew S. Grove Award. Institute of Electrical and Electronics Engineers. Archived from the original on September 9, 2018. Retrieved 4 July 2019.
"Still Room at the Bottom (nanometer transistor developed by Yang-kyu Choi from the Korea Advanced Institute of Science and Technology)", Nanoparticle News, 1 April 2006, archived from the original on 6 November 2012, retrieved 24 September 2019