Oxide thin-film transistor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Oxide thin-film transistor" in English language version.

refsWebsite

Global rank English rank

12doi.org

2^nd place

11worldcat.org

5^th place

6harvard.edu

18^th place

17^th place

5nih.gov

4^th place

3scitation.org

4,352^nd place

3,229^th place

3semanticscholar.org

11^th place

8^th place

3wiley.com

222^nd place

297^th place

2sciencedirect.com

149^th place

178^th place

1science.org

1,160^th place

737^th place

1springer.com

274^th place

309^th place

1handle.net

102^nd place

76^th place

1rsc.org

2,020^th place

1,872^nd place

1oled-info.com

low place

1extremetech.com

4,667^th place

3,322^nd place

doi.org (Global: 2^nd place; English: 2^nd place)

Klasens, H.A.; Koelmans, H. (1964-09-01). "A tin oxide field-effect transistor". Solid-State Electronics. 7 (9): 701–702. Bibcode:1964SSEle...7..701K. doi:10.1016/0038-1101(64)90057-7. ISSN 0038-1101.
Hosono, Hideo; Yasukawa, Masahiro; Kawazoe, Hiroshi (1996-08-01). "Novel oxide amorphous semiconductors: transparent conducting amorphous oxides". Journal of Non-Crystalline Solids. 203: 334–344. Bibcode:1996JNCS..203..334H. doi:10.1016/0022-3093(96)00367-5. ISSN 0022-3093.
Ueda, K.; Inoue, S.; Hirose, S.; Kawazoe, H.; Hosono, H. (2000-10-16). "Transparent p-type semiconductor: LaCuOS layered oxysulfide". Applied Physics Letters. 77 (17): 2701–2703. Bibcode:2000ApPhL..77.2701U. doi:10.1063/1.1319507. ISSN 0003-6951.
Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo (2003-05-23). "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor". Science. 300 (5623): 1269–1272. Bibcode:2003Sci...300.1269N. doi:10.1126/science.1083212. ISSN 0036-8075. PMID 12764192. S2CID 20791905.
Hosono, Hideo (July 2018). "How we made the IGZO transistor". Nature Electronics. 1 (7): 428. doi:10.1038/s41928-018-0106-0. ISSN 2520-1131.
Hoffman, R. L.; Norris, B. J.; Wager, J. F. (2003-01-28). "ZnO-based transparent thin-film transistors". Applied Physics Letters. 82 (5): 733–735. Bibcode:2003ApPhL..82..733H. doi:10.1063/1.1542677. ISSN 0003-6951.
Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo (2010-02-01). "Present status of amorphous In–Ga–Zn–O thin-film transistors". Science and Technology of Advanced Materials. 11 (4) 044305. doi:10.1088/1468-6996/11/4/044305. ISSN 1468-6996. PMC 5090337. PMID 27877346.
Sze, S.M.; Ng, Kwok K. (2006-04-10). Physics of Semiconductor Devices. doi:10.1002/0470068329. ISBN 978-0-470-06832-8.
Staebler, D. L.; Wronski, C. R. (1977-08-15). "Reversible conductivity changes in discharge‐produced amorphous Si". Applied Physics Letters. 31 (4): 292–294. Bibcode:1977ApPhL..31..292S. doi:10.1063/1.89674. ISSN 0003-6951.
Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo (2010). "Interface and bulk effects for bias—light-illumination instability in amorphous-In—Ga—Zn—O thin-film transistors". Journal of the Society for Information Display. 18 (10): 789–795. doi:10.1889/JSID18.10.789. ISSN 1938-3657. S2CID 62712554.
Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus A.; Alshareef, Husam N. (2016). "Recent Developments in p-Type Oxide Semiconductor Materials and Devices". Advanced Materials. 28 (20): 3831–3892. doi:10.1002/adma.201503080. hdl:10754/600277. ISSN 1521-4095. PMID 26879813. S2CID 205263052.
Thomas, Stuart R.; Pattanasattayavong, Pichaya; Anthopoulos, Thomas D. (2013-07-22). "Solution-processable metal oxide semiconductors for thin-film transistor applications". Chemical Society Reviews. 42 (16): 6910–6923. doi:10.1039/C3CS35402D. ISSN 1460-4744. PMID 23770615.

extremetech.com (Global: 4,667^th place; English: 3,322^nd place)

"IGZO display tech finally makes it to mass market: iPad Air now, high-res desktop display soon - ExtremeTech". www.extremetech.com. Retrieved 2021-08-27.

handle.net (Global: 102^nd place; English: 76^th place)

hdl.handle.net

Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus A.; Alshareef, Husam N. (2016). "Recent Developments in p-Type Oxide Semiconductor Materials and Devices". Advanced Materials. 28 (20): 3831–3892. doi:10.1002/adma.201503080. hdl:10754/600277. ISSN 1521-4095. PMID 26879813. S2CID 205263052.

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

Klasens, H.A.; Koelmans, H. (1964-09-01). "A tin oxide field-effect transistor". Solid-State Electronics. 7 (9): 701–702. Bibcode:1964SSEle...7..701K. doi:10.1016/0038-1101(64)90057-7. ISSN 0038-1101.
Hosono, Hideo; Yasukawa, Masahiro; Kawazoe, Hiroshi (1996-08-01). "Novel oxide amorphous semiconductors: transparent conducting amorphous oxides". Journal of Non-Crystalline Solids. 203: 334–344. Bibcode:1996JNCS..203..334H. doi:10.1016/0022-3093(96)00367-5. ISSN 0022-3093.
Ueda, K.; Inoue, S.; Hirose, S.; Kawazoe, H.; Hosono, H. (2000-10-16). "Transparent p-type semiconductor: LaCuOS layered oxysulfide". Applied Physics Letters. 77 (17): 2701–2703. Bibcode:2000ApPhL..77.2701U. doi:10.1063/1.1319507. ISSN 0003-6951.
Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo (2003-05-23). "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor". Science. 300 (5623): 1269–1272. Bibcode:2003Sci...300.1269N. doi:10.1126/science.1083212. ISSN 0036-8075. PMID 12764192. S2CID 20791905.
Hoffman, R. L.; Norris, B. J.; Wager, J. F. (2003-01-28). "ZnO-based transparent thin-film transistors". Applied Physics Letters. 82 (5): 733–735. Bibcode:2003ApPhL..82..733H. doi:10.1063/1.1542677. ISSN 0003-6951.
Staebler, D. L.; Wronski, C. R. (1977-08-15). "Reversible conductivity changes in discharge‐produced amorphous Si". Applied Physics Letters. 31 (4): 292–294. Bibcode:1977ApPhL..31..292S. doi:10.1063/1.89674. ISSN 0003-6951.

nih.gov (Global: 4^th place; English: 4^th place)

pubmed.ncbi.nlm.nih.gov

Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo (2003-05-23). "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor". Science. 300 (5623): 1269–1272. Bibcode:2003Sci...300.1269N. doi:10.1126/science.1083212. ISSN 0036-8075. PMID 12764192. S2CID 20791905.
Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo (2010-02-01). "Present status of amorphous In–Ga–Zn–O thin-film transistors". Science and Technology of Advanced Materials. 11 (4) 044305. doi:10.1088/1468-6996/11/4/044305. ISSN 1468-6996. PMC 5090337. PMID 27877346.
Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus A.; Alshareef, Husam N. (2016). "Recent Developments in p-Type Oxide Semiconductor Materials and Devices". Advanced Materials. 28 (20): 3831–3892. doi:10.1002/adma.201503080. hdl:10754/600277. ISSN 1521-4095. PMID 26879813. S2CID 205263052.
Thomas, Stuart R.; Pattanasattayavong, Pichaya; Anthopoulos, Thomas D. (2013-07-22). "Solution-processable metal oxide semiconductors for thin-film transistor applications". Chemical Society Reviews. 42 (16): 6910–6923. doi:10.1039/C3CS35402D. ISSN 1460-4744. PMID 23770615.

ncbi.nlm.nih.gov

Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo (2010-02-01). "Present status of amorphous In–Ga–Zn–O thin-film transistors". Science and Technology of Advanced Materials. 11 (4) 044305. doi:10.1088/1468-6996/11/4/044305. ISSN 1468-6996. PMC 5090337. PMID 27877346.

oled-info.com (Global: low place; English: low place)

"Sharp begins to produce Oxide TFT (IGZO) based LCDs | OLED-Info". www.oled-info.com. Retrieved 2021-08-27.

rsc.org (Global: 2,020^th place; English: 1,872^nd place)

pubs.rsc.org

Thomas, Stuart R.; Pattanasattayavong, Pichaya; Anthopoulos, Thomas D. (2013-07-22). "Solution-processable metal oxide semiconductors for thin-film transistor applications". Chemical Society Reviews. 42 (16): 6910–6923. doi:10.1039/C3CS35402D. ISSN 1460-4744. PMID 23770615.

science.org (Global: 1,160^th place; English: 737^th place)

Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo (2003-05-23). "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor". Science. 300 (5623): 1269–1272. Bibcode:2003Sci...300.1269N. doi:10.1126/science.1083212. ISSN 0036-8075. PMID 12764192. S2CID 20791905.

sciencedirect.com (Global: 149^th place; English: 178^th place)

Klasens, H.A.; Koelmans, H. (1964-09-01). "A tin oxide field-effect transistor". Solid-State Electronics. 7 (9): 701–702. Bibcode:1964SSEle...7..701K. doi:10.1016/0038-1101(64)90057-7. ISSN 0038-1101.
Hosono, Hideo; Yasukawa, Masahiro; Kawazoe, Hiroshi (1996-08-01). "Novel oxide amorphous semiconductors: transparent conducting amorphous oxides". Journal of Non-Crystalline Solids. 203: 334–344. Bibcode:1996JNCS..203..334H. doi:10.1016/0022-3093(96)00367-5. ISSN 0022-3093.

scitation.org (Global: 4,352^nd place; English: 3,229^th place)

aip.scitation.org

Ueda, K.; Inoue, S.; Hirose, S.; Kawazoe, H.; Hosono, H. (2000-10-16). "Transparent p-type semiconductor: LaCuOS layered oxysulfide". Applied Physics Letters. 77 (17): 2701–2703. Bibcode:2000ApPhL..77.2701U. doi:10.1063/1.1319507. ISSN 0003-6951.
Hoffman, R. L.; Norris, B. J.; Wager, J. F. (2003-01-28). "ZnO-based transparent thin-film transistors". Applied Physics Letters. 82 (5): 733–735. Bibcode:2003ApPhL..82..733H. doi:10.1063/1.1542677. ISSN 0003-6951.
Staebler, D. L.; Wronski, C. R. (1977-08-15). "Reversible conductivity changes in discharge‐produced amorphous Si". Applied Physics Letters. 31 (4): 292–294. Bibcode:1977ApPhL..31..292S. doi:10.1063/1.89674. ISSN 0003-6951.

semanticscholar.org (Global: 11^th place; English: 8^th place)

api.semanticscholar.org

Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo (2003-05-23). "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor". Science. 300 (5623): 1269–1272. Bibcode:2003Sci...300.1269N. doi:10.1126/science.1083212. ISSN 0036-8075. PMID 12764192. S2CID 20791905.
Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo (2010). "Interface and bulk effects for bias—light-illumination instability in amorphous-In—Ga—Zn—O thin-film transistors". Journal of the Society for Information Display. 18 (10): 789–795. doi:10.1889/JSID18.10.789. ISSN 1938-3657. S2CID 62712554.
Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus A.; Alshareef, Husam N. (2016). "Recent Developments in p-Type Oxide Semiconductor Materials and Devices". Advanced Materials. 28 (20): 3831–3892. doi:10.1002/adma.201503080. hdl:10754/600277. ISSN 1521-4095. PMID 26879813. S2CID 205263052.

springer.com (Global: 274^th place; English: 309^th place)

Brotherton, S. D. (2013). Introduction to Thin Film Transistors: Physics and Technology of TFTs. Springer International Publishing. ISBN 978-3-319-00001-5.

wiley.com (Global: 222^nd place; English: 297^th place)

onlinelibrary.wiley.com

Sze, S.M.; Ng, Kwok K. (2006-04-10). Physics of Semiconductor Devices. doi:10.1002/0470068329. ISBN 978-0-470-06832-8.
Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus A.; Alshareef, Husam N. (2016). "Recent Developments in p-Type Oxide Semiconductor Materials and Devices". Advanced Materials. 28 (20): 3831–3892. doi:10.1002/adma.201503080. hdl:10754/600277. ISSN 1521-4095. PMID 26879813. S2CID 205263052.

sid.onlinelibrary.wiley.com

Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo (2010). "Interface and bulk effects for bias—light-illumination instability in amorphous-In—Ga—Zn—O thin-film transistors". Journal of the Society for Information Display. 18 (10): 789–795. doi:10.1889/JSID18.10.789. ISSN 1938-3657. S2CID 62712554.

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Klasens, H.A.; Koelmans, H. (1964-09-01). "A tin oxide field-effect transistor". Solid-State Electronics. 7 (9): 701–702. Bibcode:1964SSEle...7..701K. doi:10.1016/0038-1101(64)90057-7. ISSN 0038-1101.
Hosono, Hideo; Yasukawa, Masahiro; Kawazoe, Hiroshi (1996-08-01). "Novel oxide amorphous semiconductors: transparent conducting amorphous oxides". Journal of Non-Crystalline Solids. 203: 334–344. Bibcode:1996JNCS..203..334H. doi:10.1016/0022-3093(96)00367-5. ISSN 0022-3093.
Ueda, K.; Inoue, S.; Hirose, S.; Kawazoe, H.; Hosono, H. (2000-10-16). "Transparent p-type semiconductor: LaCuOS layered oxysulfide". Applied Physics Letters. 77 (17): 2701–2703. Bibcode:2000ApPhL..77.2701U. doi:10.1063/1.1319507. ISSN 0003-6951.
Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo (2003-05-23). "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor". Science. 300 (5623): 1269–1272. Bibcode:2003Sci...300.1269N. doi:10.1126/science.1083212. ISSN 0036-8075. PMID 12764192. S2CID 20791905.
Hosono, Hideo (July 2018). "How we made the IGZO transistor". Nature Electronics. 1 (7): 428. doi:10.1038/s41928-018-0106-0. ISSN 2520-1131.
Hoffman, R. L.; Norris, B. J.; Wager, J. F. (2003-01-28). "ZnO-based transparent thin-film transistors". Applied Physics Letters. 82 (5): 733–735. Bibcode:2003ApPhL..82..733H. doi:10.1063/1.1542677. ISSN 0003-6951.
Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo (2010-02-01). "Present status of amorphous In–Ga–Zn–O thin-film transistors". Science and Technology of Advanced Materials. 11 (4) 044305. doi:10.1088/1468-6996/11/4/044305. ISSN 1468-6996. PMC 5090337. PMID 27877346.
Staebler, D. L.; Wronski, C. R. (1977-08-15). "Reversible conductivity changes in discharge‐produced amorphous Si". Applied Physics Letters. 31 (4): 292–294. Bibcode:1977ApPhL..31..292S. doi:10.1063/1.89674. ISSN 0003-6951.
Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo (2010). "Interface and bulk effects for bias—light-illumination instability in amorphous-In—Ga—Zn—O thin-film transistors". Journal of the Society for Information Display. 18 (10): 789–795. doi:10.1889/JSID18.10.789. ISSN 1938-3657. S2CID 62712554.
Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus A.; Alshareef, Husam N. (2016). "Recent Developments in p-Type Oxide Semiconductor Materials and Devices". Advanced Materials. 28 (20): 3831–3892. doi:10.1002/adma.201503080. hdl:10754/600277. ISSN 1521-4095. PMID 26879813. S2CID 205263052.
Thomas, Stuart R.; Pattanasattayavong, Pichaya; Anthopoulos, Thomas D. (2013-07-22). "Solution-processable metal oxide semiconductors for thin-film transistor applications". Chemical Society Reviews. 42 (16): 6910–6923. doi:10.1039/C3CS35402D. ISSN 1460-4744. PMID 23770615.

Oxide thin-film transistor (English Wikipedia)

doi.org (Global: 2nd place; English: 2nd place)

extremetech.com (Global: 4,667th place; English: 3,322nd place)

handle.net (Global: 102nd place; English: 76th place)