Piezoresistive effect (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Piezoresistive effect" in English language version.

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arxiv.org

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doi.org

  • Barlian, A.A.; Park, W.-T.; Mallon, J.R.; Rastegar, A.J.; Pruitt, B.L. (March 2009). "Review: Semiconductor Piezoresistance for Microsystems". Proceedings of the IEEE. 97 (3): 513–552. doi:10.1109/jproc.2009.2013612. ISSN 0018-9219. PMC 2829857. PMID 20198118.
  • Rowe, A. C. H.; Donoso-Barrera, A.; Renner, Ch.; Arscott, S. (April 8, 2008). "Giant Room-Temperature Piezoresistance in a Metal-Silicon Hybrid Structure". Physical Review Letters. 100 (14): 145501. arXiv:0803.0655. Bibcode:2008PhRvL.100n5501R. doi:10.1103/physrevlett.100.145501. ISSN 0031-9007. PMID 18518044. S2CID 42265969.
  • Ngo, H.-D.; Tekin, T.; Vu, T.-C.; Fritz, M.; Kurniawan, W.; Mukhopadhyay, B.; Kolitsch, A.; Schiffer, M.; Lang, K.-D. (2011). MEMS sensor with giant piezoresistive effect using metall-semiconductor hybrid structure. 16th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE. p. 1018-1021. doi:10.1109/transducers.2011.5969160.
  • Toriyama, T.; Tanimoto, Y.; Sugiyama, S. (2002). "Single crystal silicon nano-wire piezoresistors for mechanical sensors". Journal of Microelectromechanical Systems. 11 (5). Institute of Electrical and Electronics Engineers (IEEE): 605–611. doi:10.1109/jmems.2002.802905. ISSN 1057-7157.
  • Toriyama, T.; Sugiyama, S. (2003). "Single crystal silicon piezoresistive nano-wire bridge". Sensors and Actuators A: Physical. 108 (1–3). Elsevier BV: 244–249. doi:10.1016/s0924-4247(03)00269-3. ISSN 0924-4247.
  • He, Rongrui; Yang, Peidong (2006). "Giant piezoresistance effect in silicon nanowires". Nature Nanotechnology. 1 (1). Springer Science and Business Media LLC: 42–46. Bibcode:2006NatNa...1...42H. doi:10.1038/nnano.2006.53. ISSN 1748-3387. PMID 18654140. S2CID 17694712.
  • Reck, K.; Richter, J.; Hansen, O.; Thomsen, E.V. (2008). Piezoresistive effect in top-down fabricated silicon nanowires. 2008 IEEE 21st International Conference on Micro Electro Mechanical Systems. IEEE. p. 7-17. doi:10.1109/memsys.2008.4443757. ISSN 1084-6999.
  • Yang, Peidong (2008). "Chemistry and physics of silicon nanowire". Dalton Transactions (33). Royal Society of Chemistry (RSC): 4387–4391. doi:10.1039/b801440j. ISSN 1477-9226. PMID 18698439.
  • Milne, J. S.; Rowe, A. C. H.; Arscott, S.; Renner, Ch. (November 23, 2010). "Giant Piezoresistance Effects in Silicon Nanowires and Microwires". Physical Review Letters. 105 (22): 226802. arXiv:1010.1633. Bibcode:2010PhRvL.105v6802M. doi:10.1103/physrevlett.105.226802. ISSN 0031-9007. PMID 21231411. S2CID 12201580.
  • Koumela, A; Mercier, D; Dupré, C; Jourdan, G; Marcoux, C; Ollier, E; Purcell, S T; Duraffourg, L (September 2, 2011). "Piezoresistance of top-down suspended Si nanowires". Nanotechnology. 22 (39). IOP Publishing: 395701. Bibcode:2011Nanot..22M5701K. doi:10.1088/0957-4484/22/39/395701. ISSN 0957-4484. PMID 21891838. S2CID 24747354.
  • Rowe, A.C.H. (March 28, 2014). "Piezoresistance in silicon and its nanostructures". Journal of Materials Research. 29 (6): 731–744. arXiv:1309.6445. Bibcode:2014JMatR..29..731R. doi:10.1557/jmr.2014.52. ISSN 0884-2914. S2CID 119238891.
  • McClarty, M. M.; Jegenyes, N.; Gaudet, M.; Toccafondi, C.; Ossikovski, R.; Vaurette, F.; Arscott, S.; Rowe, A. C. H. (July 11, 2016). "Geometric and chemical components of the giant piezoresistance in silicon nanowires". Applied Physics Letters. 109 (2): 023102. arXiv:1512.01396. Bibcode:2016ApPhL.109b3102M. doi:10.1063/1.4955403. ISSN 0003-6951. S2CID 119189299.
  • Ali, Utku Emre; Modi, Gaurav; Agarwal, Ritesh; Bhaskaran, Harish (March 18, 2022). "Real-time nanomechanical property modulation as a framework for tunable NEMS". Nature Communications. 13 (1): 1464. Bibcode:2022NatCo..13.1464A. doi:10.1038/s41467-022-29117-7. ISSN 2041-1723. PMC 8933423. PMID 35304454.

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nih.gov

pubmed.ncbi.nlm.nih.gov

  • Barlian, A.A.; Park, W.-T.; Mallon, J.R.; Rastegar, A.J.; Pruitt, B.L. (March 2009). "Review: Semiconductor Piezoresistance for Microsystems". Proceedings of the IEEE. 97 (3): 513–552. doi:10.1109/jproc.2009.2013612. ISSN 0018-9219. PMC 2829857. PMID 20198118.
  • Rowe, A. C. H.; Donoso-Barrera, A.; Renner, Ch.; Arscott, S. (April 8, 2008). "Giant Room-Temperature Piezoresistance in a Metal-Silicon Hybrid Structure". Physical Review Letters. 100 (14): 145501. arXiv:0803.0655. Bibcode:2008PhRvL.100n5501R. doi:10.1103/physrevlett.100.145501. ISSN 0031-9007. PMID 18518044. S2CID 42265969.
  • He, Rongrui; Yang, Peidong (2006). "Giant piezoresistance effect in silicon nanowires". Nature Nanotechnology. 1 (1). Springer Science and Business Media LLC: 42–46. Bibcode:2006NatNa...1...42H. doi:10.1038/nnano.2006.53. ISSN 1748-3387. PMID 18654140. S2CID 17694712.
  • Yang, Peidong (2008). "Chemistry and physics of silicon nanowire". Dalton Transactions (33). Royal Society of Chemistry (RSC): 4387–4391. doi:10.1039/b801440j. ISSN 1477-9226. PMID 18698439.
  • Milne, J. S.; Rowe, A. C. H.; Arscott, S.; Renner, Ch. (November 23, 2010). "Giant Piezoresistance Effects in Silicon Nanowires and Microwires". Physical Review Letters. 105 (22): 226802. arXiv:1010.1633. Bibcode:2010PhRvL.105v6802M. doi:10.1103/physrevlett.105.226802. ISSN 0031-9007. PMID 21231411. S2CID 12201580.
  • Koumela, A; Mercier, D; Dupré, C; Jourdan, G; Marcoux, C; Ollier, E; Purcell, S T; Duraffourg, L (September 2, 2011). "Piezoresistance of top-down suspended Si nanowires". Nanotechnology. 22 (39). IOP Publishing: 395701. Bibcode:2011Nanot..22M5701K. doi:10.1088/0957-4484/22/39/395701. ISSN 0957-4484. PMID 21891838. S2CID 24747354.
  • Ali, Utku Emre; Modi, Gaurav; Agarwal, Ritesh; Bhaskaran, Harish (March 18, 2022). "Real-time nanomechanical property modulation as a framework for tunable NEMS". Nature Communications. 13 (1): 1464. Bibcode:2022NatCo..13.1464A. doi:10.1038/s41467-022-29117-7. ISSN 2041-1723. PMC 8933423. PMID 35304454.

ncbi.nlm.nih.gov

  • Barlian, A.A.; Park, W.-T.; Mallon, J.R.; Rastegar, A.J.; Pruitt, B.L. (March 2009). "Review: Semiconductor Piezoresistance for Microsystems". Proceedings of the IEEE. 97 (3): 513–552. doi:10.1109/jproc.2009.2013612. ISSN 0018-9219. PMC 2829857. PMID 20198118.
  • Ali, Utku Emre; Modi, Gaurav; Agarwal, Ritesh; Bhaskaran, Harish (March 18, 2022). "Real-time nanomechanical property modulation as a framework for tunable NEMS". Nature Communications. 13 (1): 1464. Bibcode:2022NatCo..13.1464A. doi:10.1038/s41467-022-29117-7. ISSN 2041-1723. PMC 8933423. PMID 35304454.

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api.semanticscholar.org

worldcat.org

search.worldcat.org

  • Barlian, A.A.; Park, W.-T.; Mallon, J.R.; Rastegar, A.J.; Pruitt, B.L. (March 2009). "Review: Semiconductor Piezoresistance for Microsystems". Proceedings of the IEEE. 97 (3): 513–552. doi:10.1109/jproc.2009.2013612. ISSN 0018-9219. PMC 2829857. PMID 20198118.
  • Rowe, A. C. H.; Donoso-Barrera, A.; Renner, Ch.; Arscott, S. (April 8, 2008). "Giant Room-Temperature Piezoresistance in a Metal-Silicon Hybrid Structure". Physical Review Letters. 100 (14): 145501. arXiv:0803.0655. Bibcode:2008PhRvL.100n5501R. doi:10.1103/physrevlett.100.145501. ISSN 0031-9007. PMID 18518044. S2CID 42265969.
  • Toriyama, T.; Tanimoto, Y.; Sugiyama, S. (2002). "Single crystal silicon nano-wire piezoresistors for mechanical sensors". Journal of Microelectromechanical Systems. 11 (5). Institute of Electrical and Electronics Engineers (IEEE): 605–611. doi:10.1109/jmems.2002.802905. ISSN 1057-7157.
  • Toriyama, T.; Sugiyama, S. (2003). "Single crystal silicon piezoresistive nano-wire bridge". Sensors and Actuators A: Physical. 108 (1–3). Elsevier BV: 244–249. doi:10.1016/s0924-4247(03)00269-3. ISSN 0924-4247.
  • He, Rongrui; Yang, Peidong (2006). "Giant piezoresistance effect in silicon nanowires". Nature Nanotechnology. 1 (1). Springer Science and Business Media LLC: 42–46. Bibcode:2006NatNa...1...42H. doi:10.1038/nnano.2006.53. ISSN 1748-3387. PMID 18654140. S2CID 17694712.
  • Reck, K.; Richter, J.; Hansen, O.; Thomsen, E.V. (2008). Piezoresistive effect in top-down fabricated silicon nanowires. 2008 IEEE 21st International Conference on Micro Electro Mechanical Systems. IEEE. p. 7-17. doi:10.1109/memsys.2008.4443757. ISSN 1084-6999.
  • Yang, Peidong (2008). "Chemistry and physics of silicon nanowire". Dalton Transactions (33). Royal Society of Chemistry (RSC): 4387–4391. doi:10.1039/b801440j. ISSN 1477-9226. PMID 18698439.
  • Milne, J. S.; Rowe, A. C. H.; Arscott, S.; Renner, Ch. (November 23, 2010). "Giant Piezoresistance Effects in Silicon Nanowires and Microwires". Physical Review Letters. 105 (22): 226802. arXiv:1010.1633. Bibcode:2010PhRvL.105v6802M. doi:10.1103/physrevlett.105.226802. ISSN 0031-9007. PMID 21231411. S2CID 12201580.
  • Koumela, A; Mercier, D; Dupré, C; Jourdan, G; Marcoux, C; Ollier, E; Purcell, S T; Duraffourg, L (September 2, 2011). "Piezoresistance of top-down suspended Si nanowires". Nanotechnology. 22 (39). IOP Publishing: 395701. Bibcode:2011Nanot..22M5701K. doi:10.1088/0957-4484/22/39/395701. ISSN 0957-4484. PMID 21891838. S2CID 24747354.
  • Rowe, A.C.H. (March 28, 2014). "Piezoresistance in silicon and its nanostructures". Journal of Materials Research. 29 (6): 731–744. arXiv:1309.6445. Bibcode:2014JMatR..29..731R. doi:10.1557/jmr.2014.52. ISSN 0884-2914. S2CID 119238891.
  • McClarty, M. M.; Jegenyes, N.; Gaudet, M.; Toccafondi, C.; Ossikovski, R.; Vaurette, F.; Arscott, S.; Rowe, A. C. H. (July 11, 2016). "Geometric and chemical components of the giant piezoresistance in silicon nanowires". Applied Physics Letters. 109 (2): 023102. arXiv:1512.01396. Bibcode:2016ApPhL.109b3102M. doi:10.1063/1.4955403. ISSN 0003-6951. S2CID 119189299.
  • Ali, Utku Emre; Modi, Gaurav; Agarwal, Ritesh; Bhaskaran, Harish (March 18, 2022). "Real-time nanomechanical property modulation as a framework for tunable NEMS". Nature Communications. 13 (1): 1464. Bibcode:2022NatCo..13.1464A. doi:10.1038/s41467-022-29117-7. ISSN 2041-1723. PMC 8933423. PMID 35304454.