Power MOSFET (English Wikipedia)

Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite journal}}: ISBN / Date incompatibility (help)
Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
Tarui, Y.; Hayashi, Y.; Sekigawa, Toshihiro (September 1969). "Diffusion Selfaligned MOST; A New Approach for High Speed Device". Extended Abstracts of the 1969 Conference on Solid State Devices. doi:10.7567/SSDM.1969.4-1. S2CID 184290914.
McLintock, G. A.; Thomas, R. E. (December 1972). Modelling of the double-diffused MOST's with self-aligned gates. 1972 International Electron Devices Meeting. pp. 24–26. doi:10.1109/IEDM.1972.249241.
Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke (23 February 2017). "The Trench Power MOSFET: Part I—History, Technology, and Prospects". IEEE Transactions on Electron Devices. 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239. S2CID 20730536.
Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. (2017). "The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability". IEEE Transactions on Electron Devices. 64 (3): 692–712. Bibcode:2017ITED...64..692W. doi:10.1109/TED.2017.2655149. ISSN 0018-9383. S2CID 38550249.

electronicdesign.com

"Rethink Power Density with GaN". Electronic Design. 21 April 2017. Retrieved 23 July 2019.

electronics-sourcing.com

Carbone, James (September–October 2018). "Buyers can expect 30-week lead times and higher tags to continue for MOSFETs" (PDF). Electronics Sourcing: 18–19.

elsevier.com

linkinghub.elsevier.com

Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.

fujielectric.com

"Automotive Power MOSFETs" (PDF). Fuji Electric. Retrieved 10 August 2019.

harvard.edu

ui.adsabs.harvard.edu

Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke (23 February 2017). "The Trench Power MOSFET: Part I—History, Technology, and Prospects". IEEE Transactions on Electron Devices. 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239. S2CID 20730536.
Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. (2017). "The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability". IEEE Transactions on Electron Devices. 64 (3): 692–712. Bibcode:2017ITED...64..692W. doi:10.1109/TED.2017.2655149. ISSN 0018-9383. S2CID 38550249.

icinsights.com

"Power Transistor Market Will Cross $13.0 Billion in 2011". IC Insights. June 21, 2011. Retrieved 15 October 2019.

infineon.com

IRLZ24N, 55V N-Channel Power MOSFET, TO-220AB package; Infineon.
"MOSFET". Infineon Technologies. Retrieved 24 December 2019.
"Infineon EiceDRIVER gate driver ICs" (PDF). Infineon. August 2019. Retrieved 26 December 2019.
"Infineon Solutions for Transportation" (PDF). Infineon. June 2013. Retrieved 23 December 2019.
"HITFETs: Smart, Protected MOSFETs" (PDF). Infineon. Retrieved 23 December 2019.

iop.org

iopscience.iop.org

Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.

irf.com

Murray, Anthony F. J.; McDonald, Tim; Davis, Harold; Cao, Joe; Spring, Kyle. "Extremely Rugged MOSFET Technology with Ultra-low R_DS(on) Specified for A Broad Range of E_AR Conditions" (PDF). International Rectifier. Retrieved 26 April 2022.

nasa.gov

spinoff.nasa.gov

"CMOS Sensors Enable Phone Cameras, HD Video". NASA Spinoff. NASA. Retrieved 6 November 2019.

patents.google.com

US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13
US Patent 4,754,310

powerelectronics.com

"Advances in Discrete Semiconductors March On". Power Electronics Technology. Informa: 52–6. September 2005. Archived (PDF) from the original on 22 March 2006. Retrieved 31 July 2019.

researchgate.net

Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke (23 February 2017). "The Trench Power MOSFET: Part I—History, Technology, and Prospects". IEEE Transactions on Electron Devices. 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239. S2CID 20730536.

semanticscholar.org

api.semanticscholar.org

Tarui, Y.; Hayashi, Y.; Sekigawa, Toshihiro (September 1969). "Diffusion Selfaligned MOST; A New Approach for High Speed Device". Extended Abstracts of the 1969 Conference on Solid State Devices. doi:10.7567/SSDM.1969.4-1. S2CID 184290914.
Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke (23 February 2017). "The Trench Power MOSFET: Part I—History, Technology, and Prospects". IEEE Transactions on Electron Devices. 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239. S2CID 20730536.
Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. (2017). "The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability". IEEE Transactions on Electron Devices. 64 (3): 692–712. Bibcode:2017ITED...64..692W. doi:10.1109/TED.2017.2655149. ISSN 0018-9383. S2CID 38550249.

semi.org

"SEMI Award for North America". SEMI. Archived from the original on 5 August 2016. Retrieved 5 August 2016.

st.com

"RF DMOS Transistors". STMicroelectronics. Retrieved 22 December 2019.
"AN1256: Application note – High-power RF MOSFET targets VHF applications" (PDF). ST Microelectronics. July 2007. Retrieved 22 December 2019.

blog.st.com

"MDmesh: 20 Years of Superjunction STPOWER MOSFETs, A Story About Innovation". STMicroelectronics. 11 September 2019. Retrieved 2 November 2019.

web.archive.org

"Advances in Discrete Semiconductors March On". Power Electronics Technology. Informa: 52–6. September 2005. Archived (PDF) from the original on 22 March 2006. Retrieved 31 July 2019.
"SEMI Award for North America". SEMI. Archived from the original on 5 August 2016. Retrieved 5 August 2016.

worldcat.org

search.worldcat.org

Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. (2017). "The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability". IEEE Transactions on Electron Devices. 64 (3): 692–712. Bibcode:2017ITED...64..692W. doi:10.1109/TED.2017.2655149. ISSN 0018-9383. S2CID 38550249.