Power MOSFET (English Wikipedia)

Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Semiconductor Devices: Pioneering Papers. pp. 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite book}}: ISBN / Date incompatibility (help); |journal= ignored (help)
Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
Tarui, Y.; Hayashi, Y.; Sekigawa, Toshihiro (September 1969). "Diffusion Selfaligned MOST; A New Approach for High Speed Device". Extended Abstracts of the 1969 Conference on Solid State Devices. doi:10.7567/SSDM.1969.4-1. S2CID 184290914.
McLintock, G. A.; Thomas, R. E. (December 1972). Modelling of the double-diffused MOST's with self-aligned gates. 1972 International Electron Devices Meeting. pp. 24–26. doi:10.1109/IEDM.1972.249241.
Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke (23 February 2017). "The Trench Power MOSFET: Part I—History, Technology, and Prospects". IEEE Transactions on Electron Devices. 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239. S2CID 20730536.
Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. (2017). "The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability". IEEE Transactions on Electron Devices. 64 (3): 692–712. Bibcode:2017ITED...64..692W. doi:10.1109/TED.2017.2655149. ISSN 0018-9383. S2CID 38550249.

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"Rethink Power Density with GaN". Electronic Design. 21 April 2017. Retrieved 23 July 2019.

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Carbone, James (September–October 2018). "Buyers can expect 30-week lead times and higher tags to continue for MOSFETs" (PDF). Electronics Sourcing: 18–19.

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Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.

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"Automotive Power MOSFETs" (PDF). Fuji Electric. Retrieved 10 August 2019.

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Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke (23 February 2017). "The Trench Power MOSFET: Part I—History, Technology, and Prospects". IEEE Transactions on Electron Devices. 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239. S2CID 20730536.
Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. (2017). "The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability". IEEE Transactions on Electron Devices. 64 (3): 692–712. Bibcode:2017ITED...64..692W. doi:10.1109/TED.2017.2655149. ISSN 0018-9383. S2CID 38550249.

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IRLZ24N, 55V N-Channel Power MOSFET, TO-220AB package; Infineon.
"MOSFET". Infineon Technologies. Retrieved 24 December 2019.
"Infineon EiceDRIVER gate driver ICs" (PDF). Infineon. August 2019. Retrieved 26 December 2019.

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Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.

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Murray, Anthony F. J.; McDonald, Tim; Davis, Harold; Cao, Joe; Spring, Kyle. "Extremely Rugged MOSFET Technology with Ultra-low R_DS(on) Specified for A Broad Range of E_AR Conditions" (PDF). International Rectifier. Retrieved 26 April 2022.

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"CMOS Sensors Enable Phone Cameras, HD Video". NASA Spinoff. NASA. Retrieved 6 November 2019.

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US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13
US Patent 4,754,310

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"Advances in Discrete Semiconductors March On". Power Electronics Technology. Informa: 52–6. September 2005. Archived (PDF) from the original on 22 March 2006. Retrieved 31 July 2019.

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Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke (23 February 2017). "The Trench Power MOSFET: Part I—History, Technology, and Prospects". IEEE Transactions on Electron Devices. 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239. S2CID 20730536.

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Tarui, Y.; Hayashi, Y.; Sekigawa, Toshihiro (September 1969). "Diffusion Selfaligned MOST; A New Approach for High Speed Device". Extended Abstracts of the 1969 Conference on Solid State Devices. doi:10.7567/SSDM.1969.4-1. S2CID 184290914.
Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke (23 February 2017). "The Trench Power MOSFET: Part I—History, Technology, and Prospects". IEEE Transactions on Electron Devices. 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239. S2CID 20730536.
Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. (2017). "The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability". IEEE Transactions on Electron Devices. 64 (3): 692–712. Bibcode:2017ITED...64..692W. doi:10.1109/TED.2017.2655149. ISSN 0018-9383. S2CID 38550249.

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"SEMI Award for North America". SEMI. Archived from the original on 5 August 2016. Retrieved 5 August 2016.

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st.com

"RF DMOS Transistors". STMicroelectronics. Retrieved 22 December 2019.
"AN1256: Application note – High-power RF MOSFET targets VHF applications" (PDF). ST Microelectronics. July 2007. Retrieved 22 December 2019.

blog.st.com

"MDmesh: 20 Years of Superjunction STPOWER MOSFETs, A Story About Innovation". STMicroelectronics. 11 September 2019. Retrieved 2 November 2019.

web.archive.org (Global: 1^st place; English: 1^st place)

"Advances in Discrete Semiconductors March On". Power Electronics Technology. Informa: 52–6. September 2005. Archived (PDF) from the original on 22 March 2006. Retrieved 31 July 2019.
"SEMI Award for North America". SEMI. Archived from the original on 5 August 2016. Retrieved 5 August 2016.
"Power Transistor Market Will Cross $13.0 Billion in 2011". IC Insights. June 21, 2011. Archived from the original on July 3, 2011. Retrieved 15 October 2019.

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Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. (2017). "The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability". IEEE Transactions on Electron Devices. 64 (3): 692–712. Bibcode:2017ITED...64..692W. doi:10.1109/TED.2017.2655149. ISSN 0018-9383. S2CID 38550249.

Power MOSFET (English Wikipedia)

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