Programmable metallization cell (English Wikipedia)

Michael N. Kozicki; Chakravarthy Gopalan; Murali Balakrishnan; Mira Park; Maria Mitkova (August 20, 2004). "Nonvolatile memory based on solid electrolytes" (PDF). Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference. IEEE. pp. 10–17. doi:10.1109/NVMT.2004.1380792. ISBN 0-7803-8726-0. S2CID 2884270. Archived from the original (PDF) on July 11, 2016. Retrieved April 13, 2017.

design-reuse.com

"Axon Technologies Corp. Announces Infineon as New Licensee of Programmable Metallization Cell Nonvolatile Memory Technology". Design And Reuse.

doi.org

Valov, Ilia; Waser, Rainer; Jameson, John; Kozicki, Michael (June 2011). "Electrochemical metallization memories-fundamentals, applications, prospects". Nanotechnology. 22 (25): 254003. Bibcode:2011Nanot..22y4003V. doi:10.1088/0957-4484/22/25/254003. PMID 21572191. S2CID 250920840.
Michael N. Kozicki; Chakravarthy Gopalan; Murali Balakrishnan; Mira Park; Maria Mitkova (August 20, 2004). "Nonvolatile memory based on solid electrolytes" (PDF). Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference. IEEE. pp. 10–17. doi:10.1109/NVMT.2004.1380792. ISBN 0-7803-8726-0. S2CID 2884270. Archived from the original (PDF) on July 11, 2016. Retrieved April 13, 2017.
M.N. Kozicki; M. Balakrishnan; C. Gopalan; C. Ratnakumar; M. Mitkova (November 2005). "Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes". Symposium Non-Volatile Memory Technology 2005. IEEE. pp. 83–89. doi:10.1109/NVMT.2005.1541405. ISBN 0-7803-9408-9. S2CID 45696302.
Muralikrishnan Balakrishnan; Sarath Chandran Puthen Thermadam; Maria Mitkova; Michael N. Kozicki (November 2006). "A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide". 2006 7th Annual Non-Volatile Memory Technology Symposium. IEEE. pp. 111–115. doi:10.1109/NVMT.2006.378887. ISBN 0-7803-9738-X. S2CID 27573769.
B. Swaroop; W. C. West; G. Martinez; Michael N. Kozicki; L.A. Akers (May 1998). "Programmable current mode Hebbian learning neural network using programmable metallization cell". ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187). Vol. 3. IEEE. pp. 33–36. doi:10.1109/ISCAS.1998.703888. ISBN 0-7803-4455-3. S2CID 61167613.
Sakamoto, Toshitsugu; Banno, Naoki; Iguchi, Noriyuki; Kawaura, Hisao; Sunamura, Hiroshi; Fujieda, Shinji; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu (2007). "A Ta₂O₅ solid-electrolyte switch with improved reliability": 38–39. doi:10.1109/VLSIT.2007.4339718. S2CID 38195904. {{cite journal}}: Cite journal requires |journal= (help)

eetimes.com

"NEC: Nanobridge could build programmable ICs". 23 February 2004. Retrieved 2020-10-22.

harvard.edu

ui.adsabs.harvard.edu

Valov, Ilia; Waser, Rainer; Jameson, John; Kozicki, Michael (June 2011). "Electrochemical metallization memories-fundamentals, applications, prospects". Nanotechnology. 22 (25): 254003. Bibcode:2011Nanot..22y4003V. doi:10.1088/0957-4484/22/25/254003. PMID 21572191. S2CID 250920840.

nanalyze.com

"Adesto's CBRAM targets 70 billion dollar market". Nanalyze. July 30, 2013. Retrieved April 13, 2017.

nih.gov

pubmed.ncbi.nlm.nih.gov

Valov, Ilia; Waser, Rainer; Jameson, John; Kozicki, Michael (June 2011). "Electrochemical metallization memories-fundamentals, applications, prospects". Nanotechnology. 22 (25): 254003. Bibcode:2011Nanot..22y4003V. doi:10.1088/0957-4484/22/25/254003. PMID 21572191. S2CID 250920840.

patents.google.com

Valov, Ilia; Waser, Rainer; Jameson, John; Kozicki, Michael (June 2011). "Electrochemical metallization memories-fundamentals, applications, prospects". Nanotechnology. 22 (25): 254003. Bibcode:2011Nanot..22y4003V. doi:10.1088/0957-4484/22/25/254003. PMID 21572191. S2CID 250920840.
"Programmable metallization cell structure and method of making same".
"Programmable sub-surface aggregating metallization structure and method of making same".
"Programmable microelectronic devices and method of forming and programming same".
"Programmable conductor memory cell structure and method therefor".
U.S. Patent 7,372,065
"Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same".
"Semiconductor device".

semanticscholar.org

api.semanticscholar.org

Valov, Ilia; Waser, Rainer; Jameson, John; Kozicki, Michael (June 2011). "Electrochemical metallization memories-fundamentals, applications, prospects". Nanotechnology. 22 (25): 254003. Bibcode:2011Nanot..22y4003V. doi:10.1088/0957-4484/22/25/254003. PMID 21572191. S2CID 250920840.
Michael N. Kozicki; Chakravarthy Gopalan; Murali Balakrishnan; Mira Park; Maria Mitkova (August 20, 2004). "Nonvolatile memory based on solid electrolytes" (PDF). Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference. IEEE. pp. 10–17. doi:10.1109/NVMT.2004.1380792. ISBN 0-7803-8726-0. S2CID 2884270. Archived from the original (PDF) on July 11, 2016. Retrieved April 13, 2017.
M.N. Kozicki; M. Balakrishnan; C. Gopalan; C. Ratnakumar; M. Mitkova (November 2005). "Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes". Symposium Non-Volatile Memory Technology 2005. IEEE. pp. 83–89. doi:10.1109/NVMT.2005.1541405. ISBN 0-7803-9408-9. S2CID 45696302.
Muralikrishnan Balakrishnan; Sarath Chandran Puthen Thermadam; Maria Mitkova; Michael N. Kozicki (November 2006). "A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide". 2006 7th Annual Non-Volatile Memory Technology Symposium. IEEE. pp. 111–115. doi:10.1109/NVMT.2006.378887. ISBN 0-7803-9738-X. S2CID 27573769.
B. Swaroop; W. C. West; G. Martinez; Michael N. Kozicki; L.A. Akers (May 1998). "Programmable current mode Hebbian learning neural network using programmable metallization cell". ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187). Vol. 3. IEEE. pp. 33–36. doi:10.1109/ISCAS.1998.703888. ISBN 0-7803-4455-3. S2CID 61167613.
Sakamoto, Toshitsugu; Banno, Naoki; Iguchi, Noriyuki; Kawaura, Hisao; Sunamura, Hiroshi; Fujieda, Shinji; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu (2007). "A Ta₂O₅ solid-electrolyte switch with improved reliability": 38–39. doi:10.1109/VLSIT.2007.4339718. S2CID 38195904. {{cite journal}}: Cite journal requires |journal= (help)

tia-nano.jp

"Low-power FPGA based on NanoBridge®technology" (PDF). Retrieved 2020-10-22.

umich.edu

astro.lsa.umich.edu

"Ion Sizes of Common Elements". Archived from the original on 2007-11-07., compare with Co

web.archive.org

"Adesto Technologies Trademarks". Archived from the original on 2019-11-18. Retrieved 2015-07-30.
Michael N. Kozicki; Chakravarthy Gopalan; Murali Balakrishnan; Mira Park; Maria Mitkova (August 20, 2004). "Nonvolatile memory based on solid electrolytes" (PDF). Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference. IEEE. pp. 10–17. doi:10.1109/NVMT.2004.1380792. ISBN 0-7803-8726-0. S2CID 2884270. Archived from the original (PDF) on July 11, 2016. Retrieved April 13, 2017.
Madrigal, Alexis (October 26, 2007). "Terabyte Thumb Drives Made Possible by Nanotech Memory". Wired. Archived from the original on May 11, 2008. Retrieved April 13, 2017.
"Ion Sizes of Common Elements". Archived from the original on 2007-11-07., compare with Co
Altis et Adesto Technologies annoncent un partenariat sur les technologies Mémoires CBRAM avancées – Business Wire – published 27 June 2011 - viewed 28 March 2014 Archived 31 March 2014 at the Wayback Machine

wired.com

Madrigal, Alexis (October 26, 2007). "Terabyte Thumb Drives Made Possible by Nanotech Memory". Wired. Archived from the original on May 11, 2008. Retrieved April 13, 2017.