Choi, S. J.; Han, J. W.; Jang, M. G.; Kim, J. S.; Kim, K. H.; Lee, G. S.; Oh, J. S.; Song, M. H.; Park, Y. C.; Kim, J. W.; Choi, Y. K. (2009). "High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory". IEEE Electron Device Letters. 30 (3): 265–268. Bibcode:2009IEDL...30..265C. doi:10.1109/LED.2008.2010720. ISSN0741-3106.
Choi, S. J.; Han, J. W.; Jang, M. G.; Kim, J. S.; Kim, K. H.; Lee, G. S.; Oh, J. S.; Song, M. H.; Park, Y. C.; Kim, J. W.; Choi, Y. K. (2009). "High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory". IEEE Electron Device Letters. 30 (3): 265–268. Bibcode:2009IEDL...30..265C. doi:10.1109/LED.2008.2010720. ISSN0741-3106.
Choi, S. J.; Han, J. W.; Jang, M. G.; Kim, J. S.; Kim, K. H.; Lee, G. S.; Oh, J. S.; Song, M. H.; Park, Y. C.; Kim, J. W.; Choi, Y. K. (2009). "High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory". IEEE Electron Device Letters. 30 (3): 265–268. Bibcode:2009IEDL...30..265C. doi:10.1109/LED.2008.2010720. ISSN0741-3106.