C.C.Dean and M. Pepper (1982). "The transition from two- to one-dimensional electronic transport in narrow silicon accumulation layers". J. Phys. C. 15 (36): L1287–L1297. Bibcode:1982JPhC...15.1287D. doi:10.1088/0022-3719/15/36/005.
E. Gremion; D. Niepce; A. Cavanna; U. Gennser & Y. Jin (2010). "Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation". Applied Physics Letters. 97 (23): 233505. Bibcode:2010ApPhL..97w3505G. doi:10.1063/1.3521466.
C.C.Dean and M. Pepper (1982). "The transition from two- to one-dimensional electronic transport in narrow silicon accumulation layers". J. Phys. C. 15 (36): L1287–L1297. Bibcode:1982JPhC...15.1287D. doi:10.1088/0022-3719/15/36/005.
E. Gremion; D. Niepce; A. Cavanna; U. Gennser & Y. Jin (2010). "Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation". Applied Physics Letters. 97 (23): 233505. Bibcode:2010ApPhL..97w3505G. doi:10.1063/1.3521466.