Random-access memory (English Wikipedia)

Agarwal, Vikas; Hrishikesh, M. S.; Keckler, Stephen W.; Burger, Doug (10–14 June 2000). "Clock Rate versus IPC: The End of the Road for Conventional Microarchitectures" (PDF). Proceedings of the 27th Annual International Symposium on Computer Architecture. 27th Annual International Symposium on Computer Architecture. Vancouver, BC. Archived (PDF) from the original on 5 November 2010. Retrieved 14 July 2018.

adsabs.harvard.edu (Global: 14^th place; English: 9^th place)

ui.adsabs.harvard.edu

Williams, F. C.; Kilburn, T. (September 1948), "Electronic Digital Computers", Nature, 162 (4117): 487, Bibcode:1948Natur.162..487W, doi:10.1038/162487a0, S2CID 4110351. Reprinted in The Origins of Digital Computers.
Sah, Chih-Tang (October 1988). "Evolution of the MOS transistor-from conception to VLSI" (PDF). Proceedings of the IEEE. 76 (10): 1280–1326 (1303). Bibcode:1988IEEEP..76.1280S. doi:10.1109/5.16328. ISSN 0018-9219. Archived (PDF) from the original on 26 July 2020. Retrieved 1 October 2019.
Isobe, Mitsuo; Uchida, Yukimasa; Maeguchi, Kenji; Mochizuki, T.; Kimura, M.; Hatano, H.; Mizutani, Y.; Tango, H. (October 1981). "An 18 ns CMOS/SOS 4K static RAM". IEEE Journal of Solid-State Circuits. 16 (5): 460–465. Bibcode:1981IJSSC..16..460I. doi:10.1109/JSSC.1981.1051623. S2CID 12992820.
Shahidi, Ghavam G.; Davari, Bijan; Dennard, Robert H.; Anderson, C. A.; Chappell, B. A.; et al. (December 1994). "A room temperature 0.1 μm CMOS on SOI". IEEE Transactions on Electron Devices. 41 (12): 2405–2412. Bibcode:1994ITED...41.2405S. doi:10.1109/16.337456. S2CID 108832941.
Hanafi, Hussein I.; Lu, Nicky C. C.; Chao, H. H.; Hwang, Wei; Henkels, W. H.; Rajeevakumar, T. V.; Terman, L. M.; Franch, Robert L. (October 1988). "A 20-ns 128-kbit*4 high speed DRAM with 330-Mbit/s data rate". IEEE Journal of Solid-State Circuits. 23 (5): 1140–1149. Bibcode:1988IJSSC..23.1140L. doi:10.1109/4.5936.

anandtech.com (Global: 1,850^th place; English: 1,272^nd place)

Shilov, Anton (29 March 2016). "Micron Begins to Sample GDDR5X Memory, Unveils Specs of Chips". AnandTech. Archived from the original on 30 March 2016. Retrieved 16 July 2019.

archive.org (Global: 6^th place; English: 6^th place)

NEC Application Specific Memory. NEC. Fall 1995. p. 359. Retrieved 21 June 2019.

arstechnica.com (Global: 473^rd place; English: 338^th place)

Gallagher, Sean (4 April 2013). "Memory that never forgets: non-volatile DIMMs hit the market". Ars Technica. Archived from the original on 8 July 2017.

az5miao.com (Global: low place; English: low place)

"History: 1990s". az5miao. Retrieved 4 April 2022.
"History: 2000s". az5miao. Archived from the original on 4 April 2022. Retrieved 4 April 2022.
"History: 2010s". az5miao. Archived from the original on 5 April 2022. Retrieved 4 April 2022.

bitsavers.org (Global: 3,844^th place; English: 1,960^th place)

Memory Data Book And Designers Guide (PDF). Mostek. March 1979. pp. 9 & 183. Archived (PDF) from the original on 27 September 2019. Retrieved 4 July 2019.

books.google.com (Global: 3^rd place; English: 3^rd place)

Solid State Design – Vol. 6. Horizon House. 1965.
Lojek, Bo (2007). History of Semiconductor Engineering. Springer Science & Business Media. pp. 362–363. ISBN 9783540342588. The i1103 was manufactured on a 6-mask silicon-gate P-MOS process with 8 μm minimum features. The resulting product had a 2,400 μm² memory cell size, a die size just under 10 mm², and sold for around $21.
P. Darche (2020). Microprocessor: Prolegomenes - Calculation and Storage Functions - Calculation Models and Computer. John Wiley & Sons. p. 59. ISBN 9781786305633.
B. Jacob; S. W. Ng; D. T. Wang (2008). Memory Systems: Cache, DRAM, Disk. Morgan Kaufmann. p. 324. ISBN 9780080553849.
"Electronic Design". Electronic Design. 41 (15–21). Hayden Publishing Company. 1993. The first commercial synchronous DRAM, the Samsung 16-Mbit KM48SL2000, employs a single-bank architecture that lets system designers easily transition from asynchronous to synchronous systems.
The Essentials of Computer Organization and Architecture. Jones & Bartlett Learning. 2006. ISBN 978-0-7637-3769-6.
Anderson, Alexander John (25 October 2020). Foundations of Computer Technology. CRC Press. ISBN 978-1-000-15371-2.
Rainer Waser (2012). Nanoelectronics and Information Technology. John Wiley & Sons. p. 790. ISBN 9783527409273. Archived from the original on 1 August 2016. Retrieved 31 March 2014.
Chris Jesshope and Colin Egan (2006). Advances in Computer Systems Architecture: 11th Asia-Pacific Conference, ACSAC 2006, Shanghai, China, September 6-8, 2006, Proceedings. Springer. p. 109. ISBN 9783540400561. Archived from the original on 1 August 2016. Retrieved 31 March 2014.
Ahmed Amine Jerraya and Wayne Wolf (2005). Multiprocessor Systems-on-chips. Morgan Kaufmann. pp. 90–91. ISBN 9780123852519. Archived from the original on 1 August 2016. Retrieved 31 March 2014.
Celso C. Ribeiro and Simone L. Martins (2004). Experimental and Efficient Algorithms: Third International Workshop, WEA 2004, Angra Dos Reis, Brazil, May 25-28, 2004, Proceedings, Volume 3. Springer. p. 529. ISBN 9783540220671. Archived from the original on 1 August 2016. Retrieved 31 March 2014.
Pimbley, J. (2012). Advanced CMOS Process Technology. Elsevier. p. 7. ISBN 9780323156806.
"Japanese Technical Abstracts". Japanese Technical Abstracts. 2 (3–4). University Microfilms: 161. 1987. The announcement of 1M DRAM in 1984 began the era of megabytes.
"Fine CMOS techniques create 1M VSRAM". Japanese Technical Abstracts. 2 (3–4). University Microfilms: 161. 1987.
Scott, J.F. (2003). "Nano-Ferroelectrics". In Tsakalakos, Thomas; Ovid'ko, Ilya A.; Vasudevan, Asuri K. (eds.). Nanostructures: Synthesis, Functional Properties and Application. Springer Science & Business Media. pp. 584–600 (597). ISBN 9789400710191.

britannica.com (Global: 37^th place; English: 64^th place)

"Robert Dennard". Encyclopedia Britannica. Archived from the original on 26 October 2020. Retrieved 8 July 2019.

cambridge.org (Global: 209^th place; English: 151^st place)

dictionary.cambridge.org

"RAM". Cambridge English Dictionary. Archived from the original on 8 March 2021. Retrieved 11 July 2019.

computer.org (Global: 6,549^th place; English: 4,616^th place)

"Famous Graphics Chips: TI TMS34010 and VRAM". IEEE Computer Society. 10 January 2019. Archived from the original on 22 June 2019. Retrieved 29 June 2019.

computer50.org (Global: low place; English: low place)

Napper, Brian, Computer 50: The University of Manchester Celebrates the Birth of the Modern Computer, archived from the original on 4 May 2012, retrieved 26 May 2012
Williams, F. C.; Kilburn, T.; Tootill, G. C. (February 1951), "Universal High-Speed Digital Computers: A Small-Scale Experimental Machine", Proc. IEE, 98 (61): 13–28, doi:10.1049/pi-2.1951.0004, archived from the original on 17 November 2013.

computerhistory.org (Global: 2,702^nd place; English: 1,789^th place)

"1966: Semiconductor RAMs Serve High-speed Storage Needs". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 4 July 2019.
"1970: Semiconductors compete with magnetic cores". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 19 June 2019.
"1966: Semiconductor RAMs Serve High-speed Storage Needs". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 19 June 2019.
"1968: Silicon Gate Technology Developed for ICs". Computer History Museum. Archived from the original on 29 July 2020. Retrieved 10 August 2019.
"1966: Semiconductor RAMs Serve High-speed Storage Needs". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 4 July 2019.
IBM first in IC memory. IBM Corporation. 1965. Archived from the original on 20 June 2019. Retrieved 19 June 2019 – via Computer History Museum.

computerhope.com (Global: low place; English: low place)

"Computer History for 1984". Computer Hope. Archived from the original on 25 June 2019. Retrieved 25 June 2019.

console5.com (Global: low place; English: low place)

"μPD41264 256K Dual Port Graphics Buffer" (PDF). NEC Electronics. Retrieved 21 June 2019.

core.ac.uk (Global: 1,383^rd place; English: 954^th place)

Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Archived (PDF) from the original on 25 June 2019. Retrieved 25 June 2019 – via CORE.

datasheet.directory (Global: low place; English: low place)

"K4W1G1646G-BC08 Datasheet" (PDF). Samsung Electronics. November 2010. Archived (PDF) from the original on 24 January 2022. Retrieved 10 July 2019.

datasheetarchive.com (Global: low place; English: low place)

"KM48SL2000-7 Datasheet". Samsung. August 1992. Archived from the original on 20 June 2019. Retrieved 19 June 2019.
"KM48SL2000-7 Datasheet". Samsung. August 1992. Archived from the original on 20 June 2019. Retrieved 19 June 2019.
HM5283206 Datasheet. Hitachi. 11 November 1994. Archived from the original on 5 February 2021. Retrieved 10 July 2019.
μPD481850 Datasheet. NEC. 6 December 1994. Retrieved 10 July 2019.
UPD4811650 Datasheet. NEC. December 1997. Archived from the original on 5 February 2021. Retrieved 10 July 2019.
Takeuchi, Kei (1998). "16M-BIT SYNCHRONOUS GRAPHICS RAM: μPD4811650". NEC Device Technology International (48). Archived from the original on 5 February 2021. Retrieved 10 July 2019.
"K4D553238F Datasheet". Samsung Electronics. March 2005. Archived from the original on 5 February 2021. Retrieved 10 July 2019.

dejazzer.com (Global: low place; English: low place)

Sah, Chih-Tang (October 1988). "Evolution of the MOS transistor-from conception to VLSI" (PDF). Proceedings of the IEEE. 76 (10): 1280–1326 (1303). Bibcode:1988IEEEP..76.1280S. doi:10.1109/5.16328. ISSN 0018-9219. Archived (PDF) from the original on 26 July 2020. Retrieved 1 October 2019.

digitaltrends.com (Global: 2,318^th place; English: 1,437^th place)

Coppock, Mark (31 January 2017). "If you're buying or upgrading your PC, expect to pay more for RAM". www.digitaltrends.com. Archived from the original on 28 March 2019. Retrieved 28 March 2019.

doi.org (Global: 2^nd place; English: 2^nd place)

Williams, F. C.; Kilburn, T. (September 1948), "Electronic Digital Computers", Nature, 162 (4117): 487, Bibcode:1948Natur.162..487W, doi:10.1038/162487a0, S2CID 4110351. Reprinted in The Origins of Digital Computers.
Williams, F. C.; Kilburn, T.; Tootill, G. C. (February 1951), "Universal High-Speed Digital Computers: A Small-Scale Experimental Machine", Proc. IEE, 98 (61): 13–28, doi:10.1049/pi-2.1951.0004, archived from the original on 17 November 2013.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650. Archived from the original on 23 December 2024. Retrieved 8 September 2024.
KAHNG, D. (1991) [1961]. "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5.{{cite journal}}: CS1 maint: periodical has ISBN (link)
Nyholm, Hannah; Monteith, Kristine; Lyles, Seth; Gallegos, Micaela; DeSantis, Mark; Donaldson, John; Taylor, Claire (20 July 2022). "The Evolution of Volatile Memory Forensics". Journal of Cybersecurity and Privacy. 2 (3): 556–572. doi:10.3390/jcp2030028. ISSN 2624-800X.
Sah, Chih-Tang (October 1988). "Evolution of the MOS transistor-from conception to VLSI" (PDF). Proceedings of the IEEE. 76 (10): 1280–1326 (1303). Bibcode:1988IEEEP..76.1280S. doi:10.1109/5.16328. ISSN 0018-9219. Archived (PDF) from the original on 26 July 2020. Retrieved 1 October 2019.
Isobe, Mitsuo; Uchida, Yukimasa; Maeguchi, Kenji; Mochizuki, T.; Kimura, M.; Hatano, H.; Mizutani, Y.; Tango, H. (October 1981). "An 18 ns CMOS/SOS 4K static RAM". IEEE Journal of Solid-State Circuits. 16 (5): 460–465. Bibcode:1981IJSSC..16..460I. doi:10.1109/JSSC.1981.1051623. S2CID 12992820.
Yoshimoto, M.; Anami, K.; Shinohara, H.; Yoshihara, T.; Takagi, H.; Nagao, S.; Kayano, S.; Nakano, T. (1983). "A 64Kb full CMOS RAM with divided word line structure". 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. Vol. XXVI. pp. 58–59. doi:10.1109/ISSCC.1983.1156503. S2CID 34837669.
Havemann, Robert H.; Eklund, R. E.; Tran, Hiep V.; Haken, R. A.; Scott, D. B.; Fung, P. K.; Ham, T. E.; Favreau, D. P.; Virkus, R. L. (December 1987). "An 0.8 μm 256K BiCMOS SRAM technology". 1987 International Electron Devices Meeting. pp. 841–843. doi:10.1109/IEDM.1987.191564. S2CID 40375699.
Shahidi, Ghavam G.; Davari, Bijan; Dennard, Robert H.; Anderson, C. A.; Chappell, B. A.; et al. (December 1994). "A room temperature 0.1 μm CMOS on SOI". IEEE Transactions on Electron Devices. 41 (12): 2405–2412. Bibcode:1994ITED...41.2405S. doi:10.1109/16.337456. S2CID 108832941.
Robinson, Arthur L. (11 May 1984). "Experimental Memory Chips Reach 1 Megabit: As they become larger, memories become an increasingly important part of the integrated circuit business, technologically and economically". Science. 224 (4649): 590–592. doi:10.1126/science.224.4649.590. ISSN 0036-8075. PMID 17838349.
Hanafi, Hussein I.; Lu, Nicky C. C.; Chao, H. H.; Hwang, Wei; Henkels, W. H.; Rajeevakumar, T. V.; Terman, L. M.; Franch, Robert L. (October 1988). "A 20-ns 128-kbit*4 high speed DRAM with 330-Mbit/s data rate". IEEE Journal of Solid-State Circuits. 23 (5): 1140–1149. Bibcode:1988IJSSC..23.1140L. doi:10.1109/4.5936.

drive.google.com (Global: 900^th place; English: 800^th place)

"Silicon Gate MOS 2102A". Intel. Archived from the original on 10 September 2021. Retrieved 27 June 2019.
"Silicon Gate MOS 2107A". Intel. Retrieved 27 June 2019.

espacenet.com (Global: 950^th place; English: 813^th place)

worldwide.espacenet.com

US patent 3562721, Robert H. Norman, "Solid State Switching and Memory Apparatus", published 9 February 1971

fulviofrisone.com (Global: low place; English: low place)

Sze, Simon M. (2002). Semiconductor Devices: Physics and Technology (PDF) (2nd ed.). Wiley. p. 214. ISBN 0-471-33372-7. Archived from the original (PDF) on 23 January 2023. Retrieved 7 October 2019.

hardwarehell.com (Global: low place; English: low place)

"Shadow Ram". Archived from the original on 29 October 2006. Retrieved 24 July 2007.

history-computer.com (Global: low place; English: low place)

The DRAM memory of Robert Dennard Archived 2020-08-01 at the Wayback Machine history-computer.com

ibm.com (Global: 1,369^th place; English: 968^th place)

www-03.ibm.com

"IBM Archives -- FAQ's for Products and Services". ibm.com. Archived from the original on 23 October 2012.

ibm.com

"DRAM". IBM100. IBM. 9 August 2017. Archived from the original on 20 June 2019. Retrieved 20 September 2019.

impress.co.jp (Global: 543^rd place; English: 2,189^th place)

pc.watch.impress.co.jp

"ソニー、65nm対応の半導体設備を導入。3年間で2,000億円の投資". pc.watch.impress.co.jp. Archived from the original on 13 August 2016.

intel.com (Global: 1,727^th place; English: 1,234^th place)

download.intel.com

"A chronological list of Intel products. The products are sorted by date" (PDF). Intel museum. Intel Corporation. July 2005. Archived from the original (PDF) on 9 August 2007. Retrieved 31 July 2007.

intel.com

"Intel: 35 Years of Innovation (1968–2003)" (PDF). Intel. 2003. Archived (PDF) from the original on 4 November 2021. Retrieved 26 June 2019.

iop.org (Global: 1,046^th place; English: 1,608^th place)

iopscience.iop.org

Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650. Archived from the original on 23 December 2024. Retrieved 8 September 2024.

maltiel-consulting.com (Global: low place; English: low place)

"Memory". STOL (Semiconductor Technology Online). Archived from the original on 2 November 2023. Retrieved 25 June 2019.
"Memory". STOL (Semiconductor Technology Online). Archived from the original on 2 November 2023. Retrieved 25 June 2019.

minitool.com (Global: low place; English: low place)

"SSD Prices Continue to Fall, Now Upgrade Your Hard Drive!". MiniTool. 24 March 2021. Archived from the original on 28 March 2019. Retrieved 28 March 2019.

mit.edu (Global: 476^th place; English: 340^th place)

dspace.mit.edu

"A Study of the DRAM industry" (PDF). MIT. 8 June 2010. Archived (PDF) from the original on 29 June 2019. Retrieved 29 June 2019.

nih.gov (Global: 5^th place; English: 5^th place)

pubmed.ncbi.nlm.nih.gov

Robinson, Arthur L. (11 May 1984). "Experimental Memory Chips Reach 1 Megabit: As they become larger, memories become an increasingly important part of the integrated circuit business, technologically and economically". Science. 224 (4649): 590–592. doi:10.1126/science.224.4649.590. ISSN 0036-8075. PMID 17838349.

oldcalculatormuseum.com (Global: low place; English: low place)

"Spec Sheet for Toshiba "TOSCAL" BC-1411". Old Calculator Web Museum. Archived from the original on 3 July 2017. Retrieved 8 May 2018.
Toshiba "Toscal" BC-1411 Desktop Calculator Archived 2007-05-20 at the Wayback Machine

oxfordlearnersdictionaries.com (Global: 7,396^th place; English: 7,015^th place)

"RAM". Oxford Advanced Learner's Dictionary. Archived from the original on 11 February 2021. Retrieved 11 July 2019.

patents.google.com (Global: 1,154^th place; English: 606^th place)

US3387286A, Dennard, Robert H., "Field-effect transistor memory", issued 4 June 1968
"Sense amplifier circuit for switching plural inputs at low power". Google Patents. Archived from the original on 22 October 2019. Retrieved 21 June 2019.

phys.org (Global: 1,595^th place; English: 1,363^rd place)

"Samsung Demonstrates World's First DDR 3 Memory Prototype". Phys.org. 17 February 2005. Archived from the original on 1 October 2023. Retrieved 23 June 2019.

retrocdn.net (Global: 2,469^th place; English: 1,207^th place)

"MSM5718C50/MD5764802" (PDF). Oki Semiconductor. February 1999. Archived (PDF) from the original on 21 June 2019. Retrieved 21 June 2019.
"Direct RDRAM" (PDF). Rambus. 12 March 1998. Archived (PDF) from the original on 21 June 2019. Retrieved 21 June 2019.

samsung.com (Global: 2,692^nd place; English: 2,465^th place)

samsung.com

"Samsung Electronics Develops First 128Mb SDRAM with DDR/SDR Manufacturing Option". Samsung Electronics. Samsung. 10 February 1999. Archived from the original on 24 June 2019. Retrieved 23 June 2019.
"Samsung Electronics Comes Out with Super-Fast 16M DDR SGRAMs". Samsung Electronics. Samsung. 17 September 1998. Archived from the original on 24 June 2019. Retrieved 23 June 2019.
"Samsung Electronics Comes Out with Super-Fast 16M DDR SGRAMs". Samsung Electronics. Samsung. 17 September 1998. Archived from the original on 24 June 2019. Retrieved 23 June 2019.
"Samsung Electronics Develops First 128Mb SDRAM with DDR/SDR Manufacturing Option". Samsung Electronics. Samsung. 10 February 1999. Archived from the original on 24 June 2019. Retrieved 23 June 2019.
"History". Samsung Electronics. Samsung. Archived from the original on 19 June 2019. Retrieved 19 June 2019.
"Samsung Develops the Industry's Fastest DDR3 SRAM for High Performance EDP and Network Applications". Samsung Semiconductor. Samsung. 29 January 2003. Archived from the original on 10 July 2019. Retrieved 25 June 2019.
"Samsung Shows Industry's First 2-Gigabit DDR2 SDRAM". Samsung Semiconductor. Samsung. 20 September 2004. Archived from the original on 10 July 2019. Retrieved 25 June 2019.
"Our Proud Heritage from 2000 to 2009". Samsung Semiconductor. Samsung. Retrieved 25 June 2019.
"Our Proud Heritage from 2010 to Now". Samsung Semiconductor. Samsung. Archived from the original on 26 June 2019. Retrieved 25 June 2019.
"Samsung Announces the World's First 222 MHz 32Mbit SGRAM for 3D Graphics and Networking Applications". Samsung Semiconductor. Samsung. 12 July 1999. Archived from the original on 10 July 2019. Retrieved 10 July 2019.
"Samsung Electronics Announces JEDEC-Compliant 256Mb GDDR2 for 3D Graphics". Samsung Electronics. Samsung. 28 August 2003. Archived from the original on 26 June 2019. Retrieved 26 June 2019.
"Samsung Electronics Develops Industry's First Ultra-Fast GDDR4 Graphics DRAM". Samsung Semiconductor. Samsung. 26 October 2005. Archived from the original on 8 July 2019. Retrieved 8 July 2019.

news.samsung.com

"Samsung Electronics Announces Industry's First 8Gb LPDDR5 DRAM for 5G and AI-powered Mobile Applications". Samsung. 17 July 2018. Archived from the original on 8 July 2019. Retrieved 8 July 2019.
"Samsung Electronics Starts Producing Industry's First 16-Gigabit GDDR6 for Advanced Graphics Systems". Samsung. 18 January 2018. Archived from the original on 20 June 2019. Retrieved 15 July 2019.

sciencemuseum.org.uk (Global: low place; English: 8,101^st place)

collection.sciencemuseum.org.uk

Toscal BC-1411 calculator. Archived 2017-07-29 at the Wayback Machine, Science Museum, London.

semanticscholar.org (Global: 15^th place; English: 8^th place)

api.semanticscholar.org

Williams, F. C.; Kilburn, T. (September 1948), "Electronic Digital Computers", Nature, 162 (4117): 487, Bibcode:1948Natur.162..487W, doi:10.1038/162487a0, S2CID 4110351. Reprinted in The Origins of Digital Computers.
Isobe, Mitsuo; Uchida, Yukimasa; Maeguchi, Kenji; Mochizuki, T.; Kimura, M.; Hatano, H.; Mizutani, Y.; Tango, H. (October 1981). "An 18 ns CMOS/SOS 4K static RAM". IEEE Journal of Solid-State Circuits. 16 (5): 460–465. Bibcode:1981IJSSC..16..460I. doi:10.1109/JSSC.1981.1051623. S2CID 12992820.
Yoshimoto, M.; Anami, K.; Shinohara, H.; Yoshihara, T.; Takagi, H.; Nagao, S.; Kayano, S.; Nakano, T. (1983). "A 64Kb full CMOS RAM with divided word line structure". 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. Vol. XXVI. pp. 58–59. doi:10.1109/ISSCC.1983.1156503. S2CID 34837669.
Havemann, Robert H.; Eklund, R. E.; Tran, Hiep V.; Haken, R. A.; Scott, D. B.; Fung, P. K.; Ham, T. E.; Favreau, D. P.; Virkus, R. L. (December 1987). "An 0.8 μm 256K BiCMOS SRAM technology". 1987 International Electron Devices Meeting. pp. 841–843. doi:10.1109/IEDM.1987.191564. S2CID 40375699.
Shahidi, Ghavam G.; Davari, Bijan; Dennard, Robert H.; Anderson, C. A.; Chappell, B. A.; et al. (December 1994). "A room temperature 0.1 μm CMOS on SOI". IEEE Transactions on Electron Devices. 41 (12): 2405–2412. Bibcode:1994ITED...41.2405S. doi:10.1109/16.337456. S2CID 108832941.

shmj.or.jp (Global: low place; English: low place)

"Late 1960s: Beginnings of MOS memory" (PDF). Semiconductor History Museum of Japan. 23 January 2019. Archived (PDF) from the original on 27 June 2019. Retrieved 27 June 2019.
"1970s: SRAM evolution" (PDF). Semiconductor History Museum of Japan. Archived (PDF) from the original on 27 June 2019. Retrieved 27 June 2019.
"1978: Double-well fast CMOS SRAM (Hitachi)" (PDF). Semiconductor History Museum of Japan. Archived (PDF) from the original on 5 July 2019. Retrieved 5 July 2019.
"Manufacturers in Japan enter the DRAM market and integration densities are improved" (PDF). Semiconductor History Museum of Japan. Archived (PDF) from the original on 27 June 2019. Retrieved 27 June 2019.

si.edu (Global: 256^th place; English: 197^th place)

smithsonianchips.si.edu

"Japanese Company Profiles" (PDF). Smithsonian Institution. 1996. Archived (PDF) from the original on 19 April 2023. Retrieved 27 June 2019.
"One of the Most Successful 16K Dynamic RAMs: The 4116". National Museum of American History. Smithsonian Institution. Archived from the original on 31 May 2023. Retrieved 20 June 2019.
"The Cutting Edge of IC Technology: The First 294,912-Bit (288K) Dynamic RAM". National Museum of American History. Smithsonian Institution. Archived from the original on 14 December 2018. Retrieved 20 June 2019.
"Hitachi HM5283206FP10 8Mbit SGRAM" (PDF). Smithsonian Institution. Archived (PDF) from the original on 16 July 2003. Retrieved 10 July 2019.

sie.com (Global: low place; English: low place)

"EMOTION ENGINE AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION BECOME ONE CHIP" (PDF). Sony. 21 April 2003. Archived (PDF) from the original on 27 February 2017. Retrieved 26 June 2019.

skhynix.com (Global: low place; English: low place)

"History: 1990s". SK Hynix. Archived from the original on 5 February 2021. Retrieved 6 July 2019.

slashgear.com (Global: 7,850^th place; English: 5,425^th place)

"Samsung 50nm 2GB DDR3 chips are industry's smallest". SlashGear. 29 September 2008. Archived from the original on 10 July 2019. Retrieved 25 June 2019.

techradar.com (Global: 1,513^th place; English: 964^th place)

Castro, Chiara (20 May 2022). "ExpressVPN TrustedServer - everything you need to know". TechRadar. Retrieved 4 October 2025.

techreport.com (Global: low place; English: low place)

Killian, Zak (18 January 2018). "Samsung fires up its foundries for mass production of GDDR6 memory". Tech Report. Archived from the original on 19 January 2018. Retrieved 18 January 2018.

theengineer.co.uk (Global: low place; English: low place)

"Toshiba's new 32 Mb Pseudo-SRAM is no fake". The Engineer. 24 June 2001. Archived from the original on 29 June 2019. Retrieved 29 June 2019.

tomshardware.co.uk (Global: low place; English: low place)

"Samsung Unleashes a Roomy DDR4 256GB RAM". Tom's Hardware. 6 September 2018. Archived from the original on 18 July 2019. Retrieved 4 April 2022.

trailing-edge.com (Global: low place; English: 9,185^th place)

bitsavers.trailing-edge.com

Component Data Catalog (PDF). Intel. 1978. p. 3. Archived (PDF) from the original on 27 June 2019. Retrieved 27 June 2019.
MOS Memory Data Book (PDF). Texas Instruments. 1984. pp. 4–15. Archived (PDF) from the original on 21 June 2019. Retrieved 21 June 2019.

tum.de (Global: 6,595^th place; English: 8,480^th place)

net.in.tum.de

Pudelko, Maximilian; Emmerich, Paul; Sebastian, Sebastian; Carle, Georg (2020). "Performance Analysis of VPN Gateways" (PDF). Technical University of Munich, Department of Informatics, Chair of Network Architectures and Services. Archived (PDF) from the original on 17 April 2024. Retrieved 25 September 2025.

ucf.edu (Global: 6,874^th place; English: 3,742^nd place)

eecs.ucf.edu

The term was coined in "Hitting the Memory Wall: Implications of the Obvious" (PDF). Archived (PDF) from the original on 6 April 2012. Retrieved 14 December 2011..

uni-potsdam.de (Global: low place; English: low place)

epic.hpi.uni-potsdam.de

"Platform 2015: Intel Processor and Platform Evolution for the Next Decade" (PDF). 2 March 2005. Archived (PDF) from the original on 27 April 2011.

utexas.edu (Global: 868^th place; English: 634^th place)

cs.utexas.edu

Agarwal, Vikas; Hrishikesh, M. S.; Keckler, Stephen W.; Burger, Doug (10–14 June 2000). "Clock Rate versus IPC: The End of the Road for Conventional Microarchitectures" (PDF). Proceedings of the 27th Annual International Symposium on Computer Architecture. 27th Annual International Symposium on Computer Architecture. Vancouver, BC. Archived (PDF) from the original on 5 November 2010. Retrieved 14 July 2018.

wccftech.com (Global: 6,369^th place; English: 4,426^th place)

"Samsung Begins Producing The Fastest GDDR6 Memory In The World". Wccftech. 18 January 2018. Archived from the original on 3 July 2019. Retrieved 16 July 2019.

web.archive.org (Global: 1^st place; English: 1^st place)

"RAM". Cambridge English Dictionary. Archived from the original on 8 March 2021. Retrieved 11 July 2019.
"RAM". Oxford Advanced Learner's Dictionary. Archived from the original on 11 February 2021. Retrieved 11 July 2019.
Gallagher, Sean (4 April 2013). "Memory that never forgets: non-volatile DIMMs hit the market". Ars Technica. Archived from the original on 8 July 2017.
"1966: Semiconductor RAMs Serve High-speed Storage Needs". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 4 July 2019.
"IBM Archives -- FAQ's for Products and Services". ibm.com. Archived from the original on 23 October 2012.
Napper, Brian, Computer 50: The University of Manchester Celebrates the Birth of the Modern Computer, archived from the original on 4 May 2012, retrieved 26 May 2012
Williams, F. C.; Kilburn, T.; Tootill, G. C. (February 1951), "Universal High-Speed Digital Computers: A Small-Scale Experimental Machine", Proc. IEE, 98 (61): 13–28, doi:10.1049/pi-2.1951.0004, archived from the original on 17 November 2013.
"1970: Semiconductors compete with magnetic cores". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 19 June 2019.
"1966: Semiconductor RAMs Serve High-speed Storage Needs". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 19 June 2019.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650. Archived from the original on 23 December 2024. Retrieved 8 September 2024.
"1968: Silicon Gate Technology Developed for ICs". Computer History Museum. Archived from the original on 29 July 2020. Retrieved 10 August 2019.
"DRAM". IBM100. IBM. 9 August 2017. Archived from the original on 20 June 2019. Retrieved 20 September 2019.
Toscal BC-1411 calculator. Archived 2017-07-29 at the Wayback Machine, Science Museum, London.
"Spec Sheet for Toshiba "TOSCAL" BC-1411". Old Calculator Web Museum. Archived from the original on 3 July 2017. Retrieved 8 May 2018.
Toshiba "Toscal" BC-1411 Desktop Calculator Archived 2007-05-20 at the Wayback Machine
"1966: Semiconductor RAMs Serve High-speed Storage Needs". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 4 July 2019.
"Robert Dennard". Encyclopedia Britannica. Archived from the original on 26 October 2020. Retrieved 8 July 2019.
Bellis, Mary. "Who Invented the Intel 1103 DRAM Chip?". Archived from the original on 14 March 2020. Retrieved 3 March 2025.
"KM48SL2000-7 Datasheet". Samsung. August 1992. Archived from the original on 20 June 2019. Retrieved 19 June 2019.
"Samsung Electronics Develops First 128Mb SDRAM with DDR/SDR Manufacturing Option". Samsung Electronics. Samsung. 10 February 1999. Archived from the original on 24 June 2019. Retrieved 23 June 2019.
"Samsung Electronics Comes Out with Super-Fast 16M DDR SGRAMs". Samsung Electronics. Samsung. 17 September 1998. Archived from the original on 24 June 2019. Retrieved 23 June 2019.
Sze, Simon M. (2002). Semiconductor Devices: Physics and Technology (PDF) (2nd ed.). Wiley. p. 214. ISBN 0-471-33372-7. Archived from the original (PDF) on 23 January 2023. Retrieved 7 October 2019.
"Shadow Ram". Archived from the original on 29 October 2006. Retrieved 24 July 2007.
Pudelko, Maximilian; Emmerich, Paul; Sebastian, Sebastian; Carle, Georg (2020). "Performance Analysis of VPN Gateways" (PDF). Technical University of Munich, Department of Informatics, Chair of Network Architectures and Services. Archived (PDF) from the original on 17 April 2024. Retrieved 25 September 2025.
The term was coined in "Hitting the Memory Wall: Implications of the Obvious" (PDF). Archived (PDF) from the original on 6 April 2012. Retrieved 14 December 2011..
"Platform 2015: Intel Processor and Platform Evolution for the Next Decade" (PDF). 2 March 2005. Archived (PDF) from the original on 27 April 2011.
Agarwal, Vikas; Hrishikesh, M. S.; Keckler, Stephen W.; Burger, Doug (10–14 June 2000). "Clock Rate versus IPC: The End of the Road for Conventional Microarchitectures" (PDF). Proceedings of the 27th Annual International Symposium on Computer Architecture. 27th Annual International Symposium on Computer Architecture. Vancouver, BC. Archived (PDF) from the original on 5 November 2010. Retrieved 14 July 2018.
Rainer Waser (2012). Nanoelectronics and Information Technology. John Wiley & Sons. p. 790. ISBN 9783527409273. Archived from the original on 1 August 2016. Retrieved 31 March 2014.
Chris Jesshope and Colin Egan (2006). Advances in Computer Systems Architecture: 11th Asia-Pacific Conference, ACSAC 2006, Shanghai, China, September 6-8, 2006, Proceedings. Springer. p. 109. ISBN 9783540400561. Archived from the original on 1 August 2016. Retrieved 31 March 2014.
Ahmed Amine Jerraya and Wayne Wolf (2005). Multiprocessor Systems-on-chips. Morgan Kaufmann. pp. 90–91. ISBN 9780123852519. Archived from the original on 1 August 2016. Retrieved 31 March 2014.
Celso C. Ribeiro and Simone L. Martins (2004). Experimental and Efficient Algorithms: Third International Workshop, WEA 2004, Angra Dos Reis, Brazil, May 25-28, 2004, Proceedings, Volume 3. Springer. p. 529. ISBN 9783540220671. Archived from the original on 1 August 2016. Retrieved 31 March 2014.
"SSD Prices Continue to Fall, Now Upgrade Your Hard Drive!". MiniTool. 24 March 2021. Archived from the original on 28 March 2019. Retrieved 28 March 2019.
Coppock, Mark (31 January 2017). "If you're buying or upgrading your PC, expect to pay more for RAM". www.digitaltrends.com. Archived from the original on 28 March 2019. Retrieved 28 March 2019.
IBM first in IC memory. IBM Corporation. 1965. Archived from the original on 20 June 2019. Retrieved 19 June 2019 – via Computer History Museum.
Sah, Chih-Tang (October 1988). "Evolution of the MOS transistor-from conception to VLSI" (PDF). Proceedings of the IEEE. 76 (10): 1280–1326 (1303). Bibcode:1988IEEEP..76.1280S. doi:10.1109/5.16328. ISSN 0018-9219. Archived (PDF) from the original on 26 July 2020. Retrieved 1 October 2019.
"Late 1960s: Beginnings of MOS memory" (PDF). Semiconductor History Museum of Japan. 23 January 2019. Archived (PDF) from the original on 27 June 2019. Retrieved 27 June 2019.
"A chronological list of Intel products. The products are sorted by date" (PDF). Intel museum. Intel Corporation. July 2005. Archived from the original (PDF) on 9 August 2007. Retrieved 31 July 2007.
"1970s: SRAM evolution" (PDF). Semiconductor History Museum of Japan. Archived (PDF) from the original on 27 June 2019. Retrieved 27 June 2019.
"Intel Memory". Intel Vintage. Archived from the original on 19 March 2022. Retrieved 6 July 2019.
Component Data Catalog (PDF). Intel. 1978. p. 3. Archived (PDF) from the original on 27 June 2019. Retrieved 27 June 2019.
"Silicon Gate MOS 2102A". Intel. Archived from the original on 10 September 2021. Retrieved 27 June 2019.
"1978: Double-well fast CMOS SRAM (Hitachi)" (PDF). Semiconductor History Museum of Japan. Archived (PDF) from the original on 5 July 2019. Retrieved 5 July 2019.
"Memory". STOL (Semiconductor Technology Online). Archived from the original on 2 November 2023. Retrieved 25 June 2019.
"Japanese Company Profiles" (PDF). Smithsonian Institution. 1996. Archived (PDF) from the original on 19 April 2023. Retrieved 27 June 2019.
"History: 1990s". SK Hynix. Archived from the original on 5 February 2021. Retrieved 6 July 2019.
"Intel: 35 Years of Innovation (1968–2003)" (PDF). Intel. 2003. Archived (PDF) from the original on 4 November 2021. Retrieved 26 June 2019.
The DRAM memory of Robert Dennard Archived 2020-08-01 at the Wayback Machine history-computer.com
"Manufacturers in Japan enter the DRAM market and integration densities are improved" (PDF). Semiconductor History Museum of Japan. Archived (PDF) from the original on 27 June 2019. Retrieved 27 June 2019.
Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Archived (PDF) from the original on 25 June 2019. Retrieved 25 June 2019 – via CORE.
"One of the Most Successful 16K Dynamic RAMs: The 4116". National Museum of American History. Smithsonian Institution. Archived from the original on 31 May 2023. Retrieved 20 June 2019.
Memory Data Book And Designers Guide (PDF). Mostek. March 1979. pp. 9 & 183. Archived (PDF) from the original on 27 September 2019. Retrieved 4 July 2019.
"The Cutting Edge of IC Technology: The First 294,912-Bit (288K) Dynamic RAM". National Museum of American History. Smithsonian Institution. Archived from the original on 14 December 2018. Retrieved 20 June 2019.
"Computer History for 1984". Computer Hope. Archived from the original on 25 June 2019. Retrieved 25 June 2019.
MOS Memory Data Book (PDF). Texas Instruments. 1984. pp. 4–15. Archived (PDF) from the original on 21 June 2019. Retrieved 21 June 2019.
"Famous Graphics Chips: TI TMS34010 and VRAM". IEEE Computer Society. 10 January 2019. Archived from the original on 22 June 2019. Retrieved 29 June 2019.
"Sense amplifier circuit for switching plural inputs at low power". Google Patents. Archived from the original on 22 October 2019. Retrieved 21 June 2019.
Breaking the gigabit barrier, DRAMs at ISSCC portend major system-design impact. (dynamic random access memory; International Solid-State Circuits Conference; Hitachi Ltd. and NEC Corp. research and development), January 9, 1995
"A Study of the DRAM industry" (PDF). MIT. 8 June 2010. Archived (PDF) from the original on 29 June 2019. Retrieved 29 June 2019.
"Toshiba's new 32 Mb Pseudo-SRAM is no fake". The Engineer. 24 June 2001. Archived from the original on 29 June 2019. Retrieved 29 June 2019.
"KM48SL2000-7 Datasheet". Samsung. August 1992. Archived from the original on 20 June 2019. Retrieved 19 June 2019.
"MSM5718C50/MD5764802" (PDF). Oki Semiconductor. February 1999. Archived (PDF) from the original on 21 June 2019. Retrieved 21 June 2019.
"Memory". STOL (Semiconductor Technology Online). Archived from the original on 2 November 2023. Retrieved 25 June 2019.
"Direct RDRAM" (PDF). Rambus. 12 March 1998. Archived (PDF) from the original on 21 June 2019. Retrieved 21 June 2019.
"Samsung Electronics Comes Out with Super-Fast 16M DDR SGRAMs". Samsung Electronics. Samsung. 17 September 1998. Archived from the original on 24 June 2019. Retrieved 23 June 2019.
"Samsung Electronics Develops First 128Mb SDRAM with DDR/SDR Manufacturing Option". Samsung Electronics. Samsung. 10 February 1999. Archived from the original on 24 June 2019. Retrieved 23 June 2019.
"Samsung Demonstrates World's First DDR 3 Memory Prototype". Phys.org. 17 February 2005. Archived from the original on 1 October 2023. Retrieved 23 June 2019.
"History". Samsung Electronics. Samsung. Archived from the original on 19 June 2019. Retrieved 19 June 2019.
"EMOTION ENGINE AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION BECOME ONE CHIP" (PDF). Sony. 21 April 2003. Archived (PDF) from the original on 27 February 2017. Retrieved 26 June 2019.
"History: 2000s". az5miao. Archived from the original on 4 April 2022. Retrieved 4 April 2022.
"Samsung Develops the Industry's Fastest DDR3 SRAM for High Performance EDP and Network Applications". Samsung Semiconductor. Samsung. 29 January 2003. Archived from the original on 10 July 2019. Retrieved 25 June 2019.
"Elpida ships 2GB DDR2 modules". The Inquirer. 4 November 2003. Archived from the original on 10 July 2019. Retrieved 25 June 2019.
"Samsung Shows Industry's First 2-Gigabit DDR2 SDRAM". Samsung Semiconductor. Samsung. 20 September 2004. Archived from the original on 10 July 2019. Retrieved 25 June 2019.
"ソニー、65nm対応の半導体設備を導入。3年間で2,000億円の投資". pc.watch.impress.co.jp. Archived from the original on 13 August 2016.
"Samsung 50nm 2GB DDR3 chips are industry's smallest". SlashGear. 29 September 2008. Archived from the original on 10 July 2019. Retrieved 25 June 2019.
"History: 2010s". az5miao. Archived from the original on 5 April 2022. Retrieved 4 April 2022.
"Our Proud Heritage from 2010 to Now". Samsung Semiconductor. Samsung. Archived from the original on 26 June 2019. Retrieved 25 June 2019.
"Samsung Electronics Announces Industry's First 8Gb LPDDR5 DRAM for 5G and AI-powered Mobile Applications". Samsung. 17 July 2018. Archived from the original on 8 July 2019. Retrieved 8 July 2019.
"Samsung Unleashes a Roomy DDR4 256GB RAM". Tom's Hardware. 6 September 2018. Archived from the original on 18 July 2019. Retrieved 4 April 2022.
HM5283206 Datasheet. Hitachi. 11 November 1994. Archived from the original on 5 February 2021. Retrieved 10 July 2019.
"Hitachi HM5283206FP10 8Mbit SGRAM" (PDF). Smithsonian Institution. Archived (PDF) from the original on 16 July 2003. Retrieved 10 July 2019.
UPD4811650 Datasheet. NEC. December 1997. Archived from the original on 5 February 2021. Retrieved 10 July 2019.
Takeuchi, Kei (1998). "16M-BIT SYNCHRONOUS GRAPHICS RAM: μPD4811650". NEC Device Technology International (48). Archived from the original on 5 February 2021. Retrieved 10 July 2019.
"Samsung Announces the World's First 222 MHz 32Mbit SGRAM for 3D Graphics and Networking Applications". Samsung Semiconductor. Samsung. 12 July 1999. Archived from the original on 10 July 2019. Retrieved 10 July 2019.
"Samsung Electronics Announces JEDEC-Compliant 256Mb GDDR2 for 3D Graphics". Samsung Electronics. Samsung. 28 August 2003. Archived from the original on 26 June 2019. Retrieved 26 June 2019.
"K4D553238F Datasheet". Samsung Electronics. March 2005. Archived from the original on 5 February 2021. Retrieved 10 July 2019.
"Samsung Electronics Develops Industry's First Ultra-Fast GDDR4 Graphics DRAM". Samsung Semiconductor. Samsung. 26 October 2005. Archived from the original on 8 July 2019. Retrieved 8 July 2019.
"K4W1G1646G-BC08 Datasheet" (PDF). Samsung Electronics. November 2010. Archived (PDF) from the original on 24 January 2022. Retrieved 10 July 2019.
Shilov, Anton (29 March 2016). "Micron Begins to Sample GDDR5X Memory, Unveils Specs of Chips". AnandTech. Archived from the original on 30 March 2016. Retrieved 16 July 2019.
"Samsung Electronics Starts Producing Industry's First 16-Gigabit GDDR6 for Advanced Graphics Systems". Samsung. 18 January 2018. Archived from the original on 20 June 2019. Retrieved 15 July 2019.
Killian, Zak (18 January 2018). "Samsung fires up its foundries for mass production of GDDR6 memory". Tech Report. Archived from the original on 19 January 2018. Retrieved 18 January 2018.
"Samsung Begins Producing The Fastest GDDR6 Memory In The World". Wccftech. 18 January 2018. Archived from the original on 3 July 2019. Retrieved 16 July 2019.

worldcat.org (Global: 4^th place; English: 4^th place)

search.worldcat.org

Nyholm, Hannah; Monteith, Kristine; Lyles, Seth; Gallegos, Micaela; DeSantis, Mark; Donaldson, John; Taylor, Claire (20 July 2022). "The Evolution of Volatile Memory Forensics". Journal of Cybersecurity and Privacy. 2 (3): 556–572. doi:10.3390/jcp2030028. ISSN 2624-800X.
Sah, Chih-Tang (October 1988). "Evolution of the MOS transistor-from conception to VLSI" (PDF). Proceedings of the IEEE. 76 (10): 1280–1326 (1303). Bibcode:1988IEEEP..76.1280S. doi:10.1109/5.16328. ISSN 0018-9219. Archived (PDF) from the original on 26 July 2020. Retrieved 1 October 2019.
Robinson, Arthur L. (11 May 1984). "Experimental Memory Chips Reach 1 Megabit: As they become larger, memories become an increasingly important part of the integrated circuit business, technologically and economically". Science. 224 (4649): 590–592. doi:10.1126/science.224.4649.590. ISSN 0036-8075. PMID 17838349.

Random-access memory (English Wikipedia)

about.com (Global: 419th place; English: 335th place)

inventors.about.com

acm.org (Global: 1,200th place; English: 821st place)

dl.acm.org

adsabs.harvard.edu (Global: 14th place; English: 9th place)

ui.adsabs.harvard.edu

anandtech.com (Global: 1,850th place; English: 1,272nd place)

archive.org (Global: 6th place; English: 6th place)

arstechnica.com (Global: 473rd place; English: 338th place)

az5miao.com (Global: low place; English: low place)

bitsavers.org (Global: 3,844th place; English: 1,960th place)

books.google.com (Global: 3rd place; English: 3rd place)

britannica.com (Global: 37th place; English: 64th place)

cambridge.org (Global: 209th place; English: 151st place)

dictionary.cambridge.org

computer.org (Global: 6,549th place; English: 4,616th place)

computer50.org (Global: low place; English: low place)

computerhistory.org (Global: 2,702nd place; English: 1,789th place)

computerhope.com (Global: low place; English: low place)

console5.com (Global: low place; English: low place)

core.ac.uk (Global: 1,383rd place; English: 954th place)

datasheet.directory (Global: low place; English: low place)

datasheetarchive.com (Global: low place; English: low place)

dejazzer.com (Global: low place; English: low place)

digitaltrends.com (Global: 2,318th place; English: 1,437th place)

doi.org (Global: 2nd place; English: 2nd place)

drive.google.com (Global: 900th place; English: 800th place)

espacenet.com (Global: 950th place; English: 813th place)

worldwide.espacenet.com

fulviofrisone.com (Global: low place; English: low place)

hardwarehell.com (Global: low place; English: low place)

history-computer.com (Global: low place; English: low place)

ibm.com (Global: 1,369th place; English: 968th place)

www-03.ibm.com

ibm.com

impress.co.jp (Global: 543rd place; English: 2,189th place)

pc.watch.impress.co.jp

intel.com (Global: 1,727th place; English: 1,234th place)

download.intel.com

intel.com

iop.org (Global: 1,046th place; English: 1,608th place)

iopscience.iop.org

maltiel-consulting.com (Global: low place; English: low place)

minitool.com (Global: low place; English: low place)

mit.edu (Global: 476th place; English: 340th place)

dspace.mit.edu

nih.gov (Global: 5th place; English: 5th place)

pubmed.ncbi.nlm.nih.gov

oldcalculatormuseum.com (Global: low place; English: low place)

oxfordlearnersdictionaries.com (Global: 7,396th place; English: 7,015th place)

patents.google.com (Global: 1,154th place; English: 606th place)

phys.org (Global: 1,595th place; English: 1,363rd place)

retrocdn.net (Global: 2,469th place; English: 1,207th place)

samsung.com (Global: 2,692nd place; English: 2,465th place)

samsung.com

news.samsung.com

sciencemuseum.org.uk (Global: low place; English: 8,101st place)

collection.sciencemuseum.org.uk

semanticscholar.org (Global: 15th place; English: 8th place)

api.semanticscholar.org

shmj.or.jp (Global: low place; English: low place)

si.edu (Global: 256th place; English: 197th place)

smithsonianchips.si.edu

sie.com (Global: low place; English: low place)

skhynix.com (Global: low place; English: low place)

slashgear.com (Global: 7,850th place; English: 5,425th place)

techradar.com (Global: 1,513th place; English: 964th place)

techreport.com (Global: low place; English: low place)

theengineer.co.uk (Global: low place; English: low place)

tomshardware.co.uk (Global: low place; English: low place)

trailing-edge.com (Global: low place; English: 9,185th place)

bitsavers.trailing-edge.com

tum.de (Global: 6,595th place; English: 8,480th place)

net.in.tum.de

ucf.edu (Global: 6,874th place; English: 3,742nd place)

eecs.ucf.edu

uni-potsdam.de (Global: low place; English: low place)

epic.hpi.uni-potsdam.de

utexas.edu (Global: 868th place; English: 634th place)

about.com (Global: 419^th place; English: 335^th place)

acm.org (Global: 1,200^th place; English: 821^st place)

adsabs.harvard.edu (Global: 14^th place; English: 9^th place)

anandtech.com (Global: 1,850^th place; English: 1,272^nd place)

archive.org (Global: 6^th place; English: 6^th place)

arstechnica.com (Global: 473^rd place; English: 338^th place)

bitsavers.org (Global: 3,844^th place; English: 1,960^th place)

books.google.com (Global: 3^rd place; English: 3^rd place)

britannica.com (Global: 37^th place; English: 64^th place)

cambridge.org (Global: 209^th place; English: 151^st place)

computer.org (Global: 6,549^th place; English: 4,616^th place)

computerhistory.org (Global: 2,702^nd place; English: 1,789^th place)

core.ac.uk (Global: 1,383^rd place; English: 954^th place)

digitaltrends.com (Global: 2,318^th place; English: 1,437^th place)

doi.org (Global: 2^nd place; English: 2^nd place)

drive.google.com (Global: 900^th place; English: 800^th place)

espacenet.com (Global: 950^th place; English: 813^th place)

ibm.com (Global: 1,369^th place; English: 968^th place)

impress.co.jp (Global: 543^rd place; English: 2,189^th place)

intel.com (Global: 1,727^th place; English: 1,234^th place)

iop.org (Global: 1,046^th place; English: 1,608^th place)

mit.edu (Global: 476^th place; English: 340^th place)

nih.gov (Global: 5^th place; English: 5^th place)

oxfordlearnersdictionaries.com (Global: 7,396^th place; English: 7,015^th place)

patents.google.com (Global: 1,154^th place; English: 606^th place)

phys.org (Global: 1,595^th place; English: 1,363^rd place)

retrocdn.net (Global: 2,469^th place; English: 1,207^th place)

samsung.com (Global: 2,692^nd place; English: 2,465^th place)

sciencemuseum.org.uk (Global: low place; English: 8,101^st place)

semanticscholar.org (Global: 15^th place; English: 8^th place)

si.edu (Global: 256^th place; English: 197^th place)

slashgear.com (Global: 7,850^th place; English: 5,425^th place)

techradar.com (Global: 1,513^th place; English: 964^th place)

trailing-edge.com (Global: low place; English: 9,185^th place)

tum.de (Global: 6,595^th place; English: 8,480^th place)

ucf.edu (Global: 6,874^th place; English: 3,742^nd place)

utexas.edu (Global: 868^th place; English: 634^th place)

wccftech.com (Global: 6,369^th place; English: 4,426^th place)

web.archive.org (Global: 1^st place; English: 1^st place)

worldcat.org (Global: 4^th place; English: 4^th place)