Resistive random-access memory (English Wikipedia)

Mehonic, A.; Cueff, S. B.; Wojdak, M.; Hudziak, S.; Jambois, O.; Labbé, C.; Garrido, B.; Rizk, R.; Kenyon, A. J. (2012). "Resistive switching in silicon suboxide films". Journal of Applied Physics. 111 (7): 074507–074507–9. Bibcode:2012JAP...111g4507M. doi:10.1063/1.3701581.

arxiv.org

Meuffels, P.; Soni, R. (2012), "Fundamental Issues and Problems in the Realization of Memristors", arXiv:1207.7319 [cond-mat.mes-hall]
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (July 2020). "An experimental proof that resistance-switching memories are not memristors". Advanced Electronic Materials. 6 (7). arXiv:1909.07238. doi:10.1002/aelm.202000010. S2CID 202577242.
Valov, I.; Linn, E.; Tappertzhofen, S.; Schmelzer, S.; van den Hurk, J.; Lentz, F.; Waser, R. (2013). "Nanobatteries in redox-based resistive switches require extension of memristor theory". Nature Communications. 4: 1771. arXiv:1303.2589. Bibcode:2013NatCo...4.1771V. doi:10.1038/ncomms2784. PMC 3644102. PMID 23612312.

blocksandfiles.com

Mellor, Chris (2023-03-16). "Taking a look at the ReRAM state of play". Blocks and Files. Retrieved 2023-11-03.

businesswire.com

"Panasonic and United Microelectronics Corporation Agreed to Develop Mass Production Process for Next Generation ReRAM". www.businesswire.com. February 6, 2017.

cambridge.org

journals.cambridge.org

I.V. Karpov, D. Kencke, D. Kau, S. Tang and G. Spadini, MRS Proceedings, Volume 1250, 2010

channelregister.co.uk

Mellor, Chris (7 February 2012), Rambus drops $35m for Unity Semiconductor

dialog-semiconductor.com

"Dialog Semiconductor: Advancing the connected world through technology | Dialog". www.dialog-semiconductor.com.

doi.org

Lee, H. Y.; Chen, P. S.; Wu, T. Y.; Chen, Y. S.; Wang, C. C.; Tzeng, P. J.; Lin, C. H.; Chen, F.; Lien, C. H.; Tsai, M. J. (2008). "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM". 2008 IEEE International Electron Devices Meeting. pp. 1–4. doi:10.1109/IEDM.2008.4796677. ISBN 978-1-4244-2377-4. S2CID 26927991.
Lamb, D R; Rundle, P C (1967). "A non-filamentary switching action in thermally grown silicon dioxide films". British Journal of Applied Physics. 18 (1): 29–32. Bibcode:1967BJAP...18...29L. doi:10.1088/0508-3443/18/1/306.
Park, In-Sung; Kim, Kyong-Rae; Lee, Sangsul; Ahn, Jinho (2007). "Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides". Japanese Journal of Applied Physics. 46 (4B): 2172. Bibcode:2007JaJAP..46.2172P. doi:10.1143/JJAP.46.2172. S2CID 122024553.
Mehonic, A.; Cueff, S. B.; Wojdak, M.; Hudziak, S.; Jambois, O.; Labbé, C.; Garrido, B.; Rizk, R.; Kenyon, A. J. (2012). "Resistive switching in silicon suboxide films". Journal of Applied Physics. 111 (7): 074507–074507–9. Bibcode:2012JAP...111g4507M. doi:10.1063/1.3701581.
Bashara, N. M.; Nielsen, P. H. (1963). "Memory effects in thin film negative resistance structures". Annual Report 1963 Conference on Electrical Insulation. pp. 29–32. doi:10.1109/EIC.1963.7466544. ISBN 978-1-5090-3119-1. {{cite book}}: ISBN / Date incompatibility (help)
Nielsen, P. H.; Bashara, N. M. (1964). "The reversible voltage-induced initial resistance in the negative resistance sandwich structure". IEEE Transactions on Electron Devices. 11 (5): 243–244. Bibcode:1964ITED...11..243N. doi:10.1109/T-ED.1964.15319. ISSN 0018-9383.
Simmons, J. G.; Verderber, R. R. (August 1967). "New thin-film resistive memory". Radio and Electronic Engineer. 34 (2): 81–89. doi:10.1049/ree.1967.0069. ISSN 0033-7722. Archived from the original on January 1, 2017.
Lomax, R. W.; Simmons, J. G. (1968). "A thin film, cold cathode, alpha-numeric display panel". Radio and Electronic Engineer. 35 (5): 265–272. doi:10.1049/ree.1968.0039. ISSN 0033-7722. Archived from the original on March 20, 2018.
Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). "Electrical phenomena in amorphous oxide films" (PDF). Reports on Progress in Physics. 33 (3): 1129–1191. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. Archived from the original (PDF) on 2018-03-20. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).
Jung, K. B.; Lee, J. W.; Park, Y. D.; Childress, J. R.; Pearton, S. J.; Jenson, M.; Hurst, A. T. (1 November 1997). "Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications". Journal of Electronic Materials. 26 (11): 1310–1313. Bibcode:1997JEMat..26.1310J. doi:10.1007/s11664-997-0076-x. ISSN 0361-5235. S2CID 93702602.
Chua, L. O. (2011), "Resistance switching memories are memristors", Applied Physics A, 102 (4): 765–783, Bibcode:2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (July 2020). "An experimental proof that resistance-switching memories are not memristors". Advanced Electronic Materials. 6 (7). arXiv:1909.07238. doi:10.1002/aelm.202000010. S2CID 202577242.
Valov, I.; Linn, E.; Tappertzhofen, S.; Schmelzer, S.; van den Hurk, J.; Lentz, F.; Waser, R. (2013). "Nanobatteries in redox-based resistive switches require extension of memristor theory". Nature Communications. 4: 1771. arXiv:1303.2589. Bibcode:2013NatCo...4.1771V. doi:10.1038/ncomms2784. PMC 3644102. PMID 23612312.
Mehonic, A.; Munde, M. S.; Ng, W. H.; Buckwell, M.; Montesi, L.; Bosman, M.; Shluger, A. L.; Kenyon, A. J. (2017). "Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices". Microelectronic Engineering. 178: 98–103. doi:10.1016/j.mee.2017.04.033.
Lanza, Mario (2014). "A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope". Materials. 7 (3): 2155–2182. Bibcode:2014Mate....7.2155L. doi:10.3390/ma7032155. PMC 5453275. PMID 28788561.
Lee, D.; Seong, D. J.; Jo, I.; Xiang, F.; Dong, R.; Oh, S.; Hwang, H. (2007). "Resistance switching of copper doped MoO[sub x] films for nonvolatile memory applications". Applied Physics Letters. 90 (12): 122104. Bibcode:2007ApPhL..90l2104L. doi:10.1063/1.2715002.
Lanza, M.; Bersuker, G.; Porti, M.; Miranda, E.; Nafría, M.; Aymerich, X. (2012-11-05). "Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries". Applied Physics Letters. 101 (19): 193502. Bibcode:2012ApPhL.101s3502L. doi:10.1063/1.4765342. ISSN 0003-6951.
Shi, Yuanyuan; Ji, Yanfeng; Hui, Fei; Nafria, Montserrat; Porti, Marc; Bersuker, Gennadi; Lanza, Mario (2015-04-01). "In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories". Advanced Electronic Materials. 1 (4): n/a. doi:10.1002/aelm.201400058. ISSN 2199-160X. S2CID 110305072.
"Advanced Engineering Materials – Wiley Online Library". Aem-journal.com. doi:10.1002/(ISSN)1527-2648. Archived from the original on 2013-04-30. Retrieved 2014-08-13.
Chen, Yu-Sheng; Wu, Tai-Yuan; Tzeng, Pei-Jer; Chen, Pang-Shiu; Lee, H. Y.; Lin, Cha-Hsin; Chen, F.; Tsai, Ming-Jinn (2009). "Forming-free HfO₂ bipolar RRAM device with improved endurance and high speed operation". 2009 International Symposium on VLSI Technology, Systems, and Applications. pp. 37–38. doi:10.1109/VTSA.2009.5159281. ISBN 978-1-4244-2784-0. S2CID 7590725.
Balakrishnan, M.; Thermadam, S. C. P.; Mitkova, M.; Kozicki, M. N. (2006). "A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide". 2006 7th Annual Non-Volatile Memory Technology Symposium. pp. 104–110. doi:10.1109/NVMT.2006.378887. ISBN 978-0-7803-9738-5. S2CID 27573769.
Sills, S.; Yasuda, S.; Strand, J.; Calderoni, A.; Aratani, K.; Johnson, A.; Ramaswamy, N. (2014). "A copper ReRAM cell for Storage Class Memory applications". 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers. pp. 1–2. doi:10.1109/VLSIT.2014.6894368. ISBN 978-1-4799-3332-7. S2CID 9690870.
Mandapati, R.; Shrivastava, S.; Das, B.; Sushama; Ostwal, V.; Schulze, J.; Ganguly, U. (2014). "High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM". 72nd Device Research Conference. pp. 241–242. doi:10.1109/DRC.2014.6872387. ISBN 978-1-4799-5406-3. S2CID 31770873.
Waser, Rainer; Aono, Masakazu (2007). "Nanoionics-based resistive switching memories". Nature Materials. 6 (11): 833–840. Bibcode:2007NatMa...6..833W. doi:10.1038/nmat2023. ISSN 1476-4660. PMID 17972938.
Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco M.; Larcher, Luca (2017-01-01). "Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride". Advanced Functional Materials. 27 (10): n/a. doi:10.1002/adfm.201604811. hdl:11380/1129421. ISSN 1616-3028. S2CID 100500198.
Puglisi, F. M.; Larcher, L.; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. (2016-12-01). "2D h-BN based RRAM devices". 2016 IEEE International Electron Devices Meeting (IEDM). pp. 34.8.1–34.8.4. doi:10.1109/IEDM.2016.7838544. hdl:11380/1129447. ISBN 978-1-5090-3902-9. S2CID 28059875.
Tsunoda, K.; Kinoshita, K.; Noshiro, H.; Yamazaki, Y.; Iizuka, T.; Ito, Y.; Takahashi, A.; Okano, A.; Sato, Y.; Fukano, T.; Aoki, M.; Sugiyama, Y. (2007). "Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V". 2007 IEEE International Electron Devices Meeting. pp. 767–770. doi:10.1109/IEDM.2007.4419060. ISBN 978-1-4244-1507-6. S2CID 40684267.
Wei, Z.; Kanzawa, Y.; Arita, K.; Katoh, Y.; Kawai, K.; Muraoka, S.; Mitani, S.; Fujii, S.; Katayama, K.; Iijima, M.; Mikawa, T.; Ninomiya, T.; Miyanaga, R.; Kawashima, Y.; Tsuji, K.; Himeno, A.; Okada, T.; Azuma, R.; Shimakawa, K.; Sugaya, H.; Takagi, T.; Yasuhara, R.; Horiba, K.; Kumigashira, H.; Oshima, M. (2008). "Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism". 2008 IEEE International Electron Devices Meeting. pp. 1–4. doi:10.1109/IEDM.2008.4796676. ISBN 978-1-4244-2377-4. S2CID 30862029.
Kannan, V; Rhee J K (6 October 2011). "Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory". Applied Physics Letters. 99 (14): 143504. Bibcode:2011ApPhL..99n3504K. doi:10.1063/1.3647629 – via AIP.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel I; Ashrafi, Almamun; Zhong, Jian; Lu, Yicheng (2013). "Vertically integrated ZnO-Based 1D1R structure for resistive switching". Journal of Physics D: Applied Physics. 46 (14): 145101. Bibcode:2013JPhD...46n5101Z. doi:10.1088/0022-3727/46/14/145101. S2CID 121110610.
Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Gu, P. Y.; Chen, C. W.; Lin, W. P.; Liu, W. H.; Hsu, Y. Y.; Sheu, S. S.; Chiang, P. C.; Chen, W. S.; Chen, F. T.; Lien, C. H.; Tsai, M. J. (2009). "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity". 2009 IEEE International Electron Devices Meeting (IEDM). pp. 1–4. doi:10.1109/IEDM.2009.5424411. ISBN 978-1-4244-5639-0. S2CID 36391893.
Cen, C.; Thiel, S.; Hammerl, G.; Schneider, C. W.; Andersen, K. E.; Hellberg, C. S.; Mannhart, J.; Levy, J. (2008). "Nanoscale control of an interfacial metal–insulator transition at room temperature". Nature Materials. 7 (4): 298–302. Bibcode:2008NatMa...7..298C. doi:10.1038/nmat2136. PMID 18311143.
Lin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Hu, Chenming; Tseng, Tseung-Yuen (2007). "Bistable Resistive Switching in Al2O3 Memory Thin Films". Journal of the Electrochemical Society. 154 (9): G189. Bibcode:2007JElS..154G.189L. doi:10.1149/1.2750450.
Linn, Eike; Rosezin, Roland; Kügeler, Carsten; Waser, Rainer (2010). "Complementary resistive switches for passive nanocrossbar memories". Nature Materials. 9 (5): 403–6. Bibcode:2010NatMa...9..403L. doi:10.1038/nmat2748. PMID 20400954.
Tappertzhofen, S; Linn, E; Nielen, L; Rosezin, R; Lentz, F; Bruchhaus, R; Valov, I; Böttger, U; Waser, R (2011). "Capacity based nondestructive readout for complementary resistive switches". Nanotechnology. 22 (39): 395203. Bibcode:2011Nanot..22M5203T. doi:10.1088/0957-4484/22/39/395203. PMID 21891857. S2CID 12305490.
Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D.; Miao, Feng; Paul Strachan, John; Li, Wen-Di; Yi, Wei; Ohlberg, Douglas A. A.; Joon Choi, Byung; Wu, Wei; Nickel, Janice H.; Medeiros-Ribeiro, Gilberto; Stanley Williams, R. (2012). "Engineering nonlinearity into memristors for passive crossbar applications". Applied Physics Letters. 100 (11): 113501. Bibcode:2012ApPhL.100k3501J. doi:10.1063/1.3693392.
Mehonic, Adnan; Cueff, Sébastien; Wojdak, Maciej; Hudziak, Stephen; Labbé, Christophe; Rizk, Richard; Kenyon, Anthony J (2012). "Electrically tailored resistance switching in silicon oxide". Nanotechnology. 23 (45): 455201. Bibcode:2012Nanot..23S5201M. doi:10.1088/0957-4484/23/45/455201. PMID 23064085. S2CID 12528923.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel; Ashrafi, Almamun; Lu, Yicheng (2012). "FeZnO-Based Resistive Switching Devices". Journal of Electronic Materials. 41 (10): 2880. Bibcode:2012JEMat..41.2880Z. doi:10.1007/s11664-012-2045-2. S2CID 95921756.
Chen, F. T.; Chen, Y. S.; Wu, T. Y.; Ku, T. K. (2014). "Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture". IEEE Electron Device Letters. 35 (2): 223–225. Bibcode:2014IEDL...35..223C. doi:10.1109/LED.2013.2294809. ISSN 0741-3106. S2CID 1126533.
Prezioso, M.; et al. (2016). Teherani, Ferechteh H; Look, David C; Rogers, David J (eds.). "RRAM-based Hardware Implementation of Artificial Neural Networks: Progress Updates and Challenges Ahead" (PDF). SPIE Annual Review. Oxide-based Materials and Devices VII. 9749: 974918. Bibcode:2016SPIE.9749E..18P. doi:10.1117/12.2235089. S2CID 20633281. Retrieved June 13, 2021.

eenewseurope.com

"SiOx ReRAM reaches 1Mbit milestone". eeNews Europe. July 4, 2018.

eetimes.com

electronicsweekly.com

"Weebit Nano ReRAM scaled to 28nm". www.electronicsweekly.com. October 2021.

engineering.com

Mass Producing Printed Electronics -Engineering.com

europa.eu

euipo.europa.eu

"RRAM: Trademark 003062791". euipo.europa.eu. EUIPO.

foresight.org

"the Foresight Institute » Blog Archive » Nanotechnology-based next generation memory nears mass production". Foresight.org. 2014-08-10. Retrieved 2014-08-13.

fujitsu.com

"Fujitsu Semiconductor Launches World's Largest Density 4 Mbit ReRAM Product for Mass Production : FUJITSU SEMICONDUCTOR". www.fujitsu.com.

handle.net

hdl.handle.net

Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco M.; Larcher, Luca (2017-01-01). "Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride". Advanced Functional Materials. 27 (10): n/a. doi:10.1002/adfm.201604811. hdl:11380/1129421. ISSN 1616-3028. S2CID 100500198.
Puglisi, F. M.; Larcher, L.; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. (2016-12-01). "2D h-BN based RRAM devices". 2016 IEEE International Electron Devices Meeting (IEDM). pp. 34.8.1–34.8.4. doi:10.1109/IEDM.2016.7838544. hdl:11380/1129447. ISBN 978-1-5090-3902-9. S2CID 28059875.

harvard.edu

ui.adsabs.harvard.edu

Lamb, D R; Rundle, P C (1967). "A non-filamentary switching action in thermally grown silicon dioxide films". British Journal of Applied Physics. 18 (1): 29–32. Bibcode:1967BJAP...18...29L. doi:10.1088/0508-3443/18/1/306.
Park, In-Sung; Kim, Kyong-Rae; Lee, Sangsul; Ahn, Jinho (2007). "Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides". Japanese Journal of Applied Physics. 46 (4B): 2172. Bibcode:2007JaJAP..46.2172P. doi:10.1143/JJAP.46.2172. S2CID 122024553.
Mehonic, A.; Cueff, S. B.; Wojdak, M.; Hudziak, S.; Jambois, O.; Labbé, C.; Garrido, B.; Rizk, R.; Kenyon, A. J. (2012). "Resistive switching in silicon suboxide films". Journal of Applied Physics. 111 (7): 074507–074507–9. Bibcode:2012JAP...111g4507M. doi:10.1063/1.3701581.
Nielsen, P. H.; Bashara, N. M. (1964). "The reversible voltage-induced initial resistance in the negative resistance sandwich structure". IEEE Transactions on Electron Devices. 11 (5): 243–244. Bibcode:1964ITED...11..243N. doi:10.1109/T-ED.1964.15319. ISSN 0018-9383.
Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). "Electrical phenomena in amorphous oxide films" (PDF). Reports on Progress in Physics. 33 (3): 1129–1191. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. Archived from the original (PDF) on 2018-03-20. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).
Jung, K. B.; Lee, J. W.; Park, Y. D.; Childress, J. R.; Pearton, S. J.; Jenson, M.; Hurst, A. T. (1 November 1997). "Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications". Journal of Electronic Materials. 26 (11): 1310–1313. Bibcode:1997JEMat..26.1310J. doi:10.1007/s11664-997-0076-x. ISSN 0361-5235. S2CID 93702602.
Chua, L. O. (2011), "Resistance switching memories are memristors", Applied Physics A, 102 (4): 765–783, Bibcode:2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Valov, I.; Linn, E.; Tappertzhofen, S.; Schmelzer, S.; van den Hurk, J.; Lentz, F.; Waser, R. (2013). "Nanobatteries in redox-based resistive switches require extension of memristor theory". Nature Communications. 4: 1771. arXiv:1303.2589. Bibcode:2013NatCo...4.1771V. doi:10.1038/ncomms2784. PMC 3644102. PMID 23612312.
Lanza, Mario (2014). "A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope". Materials. 7 (3): 2155–2182. Bibcode:2014Mate....7.2155L. doi:10.3390/ma7032155. PMC 5453275. PMID 28788561.
Lee, D.; Seong, D. J.; Jo, I.; Xiang, F.; Dong, R.; Oh, S.; Hwang, H. (2007). "Resistance switching of copper doped MoO[sub x] films for nonvolatile memory applications". Applied Physics Letters. 90 (12): 122104. Bibcode:2007ApPhL..90l2104L. doi:10.1063/1.2715002.
Lanza, M.; Bersuker, G.; Porti, M.; Miranda, E.; Nafría, M.; Aymerich, X. (2012-11-05). "Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries". Applied Physics Letters. 101 (19): 193502. Bibcode:2012ApPhL.101s3502L. doi:10.1063/1.4765342. ISSN 0003-6951.
Waser, Rainer; Aono, Masakazu (2007). "Nanoionics-based resistive switching memories". Nature Materials. 6 (11): 833–840. Bibcode:2007NatMa...6..833W. doi:10.1038/nmat2023. ISSN 1476-4660. PMID 17972938.
Kannan, V; Rhee J K (6 October 2011). "Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory". Applied Physics Letters. 99 (14): 143504. Bibcode:2011ApPhL..99n3504K. doi:10.1063/1.3647629 – via AIP.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel I; Ashrafi, Almamun; Zhong, Jian; Lu, Yicheng (2013). "Vertically integrated ZnO-Based 1D1R structure for resistive switching". Journal of Physics D: Applied Physics. 46 (14): 145101. Bibcode:2013JPhD...46n5101Z. doi:10.1088/0022-3727/46/14/145101. S2CID 121110610.
Cen, C.; Thiel, S.; Hammerl, G.; Schneider, C. W.; Andersen, K. E.; Hellberg, C. S.; Mannhart, J.; Levy, J. (2008). "Nanoscale control of an interfacial metal–insulator transition at room temperature". Nature Materials. 7 (4): 298–302. Bibcode:2008NatMa...7..298C. doi:10.1038/nmat2136. PMID 18311143.
Lin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Hu, Chenming; Tseng, Tseung-Yuen (2007). "Bistable Resistive Switching in Al2O3 Memory Thin Films". Journal of the Electrochemical Society. 154 (9): G189. Bibcode:2007JElS..154G.189L. doi:10.1149/1.2750450.
Linn, Eike; Rosezin, Roland; Kügeler, Carsten; Waser, Rainer (2010). "Complementary resistive switches for passive nanocrossbar memories". Nature Materials. 9 (5): 403–6. Bibcode:2010NatMa...9..403L. doi:10.1038/nmat2748. PMID 20400954.
Tappertzhofen, S; Linn, E; Nielen, L; Rosezin, R; Lentz, F; Bruchhaus, R; Valov, I; Böttger, U; Waser, R (2011). "Capacity based nondestructive readout for complementary resistive switches". Nanotechnology. 22 (39): 395203. Bibcode:2011Nanot..22M5203T. doi:10.1088/0957-4484/22/39/395203. PMID 21891857. S2CID 12305490.
Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D.; Miao, Feng; Paul Strachan, John; Li, Wen-Di; Yi, Wei; Ohlberg, Douglas A. A.; Joon Choi, Byung; Wu, Wei; Nickel, Janice H.; Medeiros-Ribeiro, Gilberto; Stanley Williams, R. (2012). "Engineering nonlinearity into memristors for passive crossbar applications". Applied Physics Letters. 100 (11): 113501. Bibcode:2012ApPhL.100k3501J. doi:10.1063/1.3693392.
Mehonic, Adnan; Cueff, Sébastien; Wojdak, Maciej; Hudziak, Stephen; Labbé, Christophe; Rizk, Richard; Kenyon, Anthony J (2012). "Electrically tailored resistance switching in silicon oxide". Nanotechnology. 23 (45): 455201. Bibcode:2012Nanot..23S5201M. doi:10.1088/0957-4484/23/45/455201. PMID 23064085. S2CID 12528923.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel; Ashrafi, Almamun; Lu, Yicheng (2012). "FeZnO-Based Resistive Switching Devices". Journal of Electronic Materials. 41 (10): 2880. Bibcode:2012JEMat..41.2880Z. doi:10.1007/s11664-012-2045-2. S2CID 95921756.
Chen, F. T.; Chen, Y. S.; Wu, T. Y.; Ku, T. K. (2014). "Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture". IEEE Electron Device Letters. 35 (2): 223–225. Bibcode:2014IEDL...35..223C. doi:10.1109/LED.2013.2294809. ISSN 0741-3106. S2CID 1126533.
Prezioso, M.; et al. (2016). Teherani, Ferechteh H; Look, David C; Rogers, David J (eds.). "RRAM-based Hardware Implementation of Artificial Neural Networks: Progress Updates and Challenges Ahead" (PDF). SPIE Annual Review. Oxide-based Materials and Devices VII. 9749: 974918. Bibcode:2016SPIE.9749E..18P. doi:10.1117/12.2235089. S2CID 20633281. Retrieved June 13, 2021.

ieee.org

ieeexplore.ieee.org

Simmons, J. G.; Verderber, R. R. (August 1967). "New thin-film resistive memory". Radio and Electronic Engineer. 34 (2): 81–89. doi:10.1049/ree.1967.0069. ISSN 0033-7722. Archived from the original on January 1, 2017.
Lomax, R. W.; Simmons, J. G. (1968). "A thin film, cold cathode, alpha-numeric display panel". Radio and Electronic Engineer. 35 (5): 265–272. doi:10.1049/ree.1968.0039. ISSN 0033-7722. Archived from the original on March 20, 2018.
V. S. S. Srinivasan et al., Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy," Electron Device Letters, IEEE, vol.33, no.10, pp.1396,1398, Oct. 2012 doi: 10.1109/LED.2012.2209394 [1]
Yoon, Hong Sik; Baek, In-Gyu; Zhao, Jinshi; Sim, Hyunjun; Park, Min Young; Lee, Hansin; Oh, Gyu-Hwan; Shin, Jong Chan; Yeo, In-Seok; Chung, U.-In (2009). "Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications". 2009 Symposium on VLSI Technology: 26–27.

site.ieee.org

"TEMs of Ag filament" (PDF).

intrinsicsemi.com

"Intrinsic AI Solutions". Intrinsic AI Solutions. Retrieved 2023-11-02.
"Intrinsic AI Solutions". Intrinsic AI Solutions. Retrieved 2023-11-03.

jos.ac.cn

"Comparison of Pt/TiOx/Pt vs Pt/TaOx/TaOy/Pt". Archived from the original on 2017-02-13. Retrieved 2017-02-13.

mouser.tw

Panasonic ReRAM-based product description

nih.gov

pubmed.ncbi.nlm.nih.gov

Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Valov, I.; Linn, E.; Tappertzhofen, S.; Schmelzer, S.; van den Hurk, J.; Lentz, F.; Waser, R. (2013). "Nanobatteries in redox-based resistive switches require extension of memristor theory". Nature Communications. 4: 1771. arXiv:1303.2589. Bibcode:2013NatCo...4.1771V. doi:10.1038/ncomms2784. PMC 3644102. PMID 23612312.
Lanza, Mario (2014). "A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope". Materials. 7 (3): 2155–2182. Bibcode:2014Mate....7.2155L. doi:10.3390/ma7032155. PMC 5453275. PMID 28788561.
Waser, Rainer; Aono, Masakazu (2007). "Nanoionics-based resistive switching memories". Nature Materials. 6 (11): 833–840. Bibcode:2007NatMa...6..833W. doi:10.1038/nmat2023. ISSN 1476-4660. PMID 17972938.
Cen, C.; Thiel, S.; Hammerl, G.; Schneider, C. W.; Andersen, K. E.; Hellberg, C. S.; Mannhart, J.; Levy, J. (2008). "Nanoscale control of an interfacial metal–insulator transition at room temperature". Nature Materials. 7 (4): 298–302. Bibcode:2008NatMa...7..298C. doi:10.1038/nmat2136. PMID 18311143.
Linn, Eike; Rosezin, Roland; Kügeler, Carsten; Waser, Rainer (2010). "Complementary resistive switches for passive nanocrossbar memories". Nature Materials. 9 (5): 403–6. Bibcode:2010NatMa...9..403L. doi:10.1038/nmat2748. PMID 20400954.
Tappertzhofen, S; Linn, E; Nielen, L; Rosezin, R; Lentz, F; Bruchhaus, R; Valov, I; Böttger, U; Waser, R (2011). "Capacity based nondestructive readout for complementary resistive switches". Nanotechnology. 22 (39): 395203. Bibcode:2011Nanot..22M5203T. doi:10.1088/0957-4484/22/39/395203. PMID 21891857. S2CID 12305490.
Mehonic, Adnan; Cueff, Sébastien; Wojdak, Maciej; Hudziak, Stephen; Labbé, Christophe; Rizk, Richard; Kenyon, Anthony J (2012). "Electrically tailored resistance switching in silicon oxide". Nanotechnology. 23 (45): 455201. Bibcode:2012Nanot..23S5201M. doi:10.1088/0957-4484/23/45/455201. PMID 23064085. S2CID 12528923.

ncbi.nlm.nih.gov

Valov, I.; Linn, E.; Tappertzhofen, S.; Schmelzer, S.; van den Hurk, J.; Lentz, F.; Waser, R. (2013). "Nanobatteries in redox-based resistive switches require extension of memristor theory". Nature Communications. 4: 1771. arXiv:1303.2589. Bibcode:2013NatCo...4.1771V. doi:10.1038/ncomms2784. PMC 3644102. PMID 23612312.
Lanza, Mario (2014). "A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope". Materials. 7 (3): 2155–2182. Bibcode:2014Mate....7.2155L. doi:10.3390/ma7032155. PMC 5453275. PMID 28788561.

panasonic.co.jp

"the new microcontrollers with on-chip non-volatile memory ReRAM" (Press release). Panasonic. May 15, 2012. Retrieved May 16, 2012.

patents.google.com

pcworld.com

"Next-gen storage wars: In the battle of RRAM vs 3D NAND flash, all of us are winners" (Press release). PC World. August 9, 2013. Archived from the original on February 2, 2014. Retrieved January 28, 2014.

psu.edu

citeseerx.ist.psu.edu

Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.

quantamagazine.org

"NeuRRAM". www.quantamagazine.org. Simon's Foundation. 10 November 2022.

rram-info.com

"Weebit announced working 40nm SiOx RRAM cell samples | RRAM-Info". www.rram-info.com.
"Weebit Nano packaged its RRAM chips for the first time | RRAM-Info". www.rram-info.com.
"Weebit Nano completed its first embedded RRAM module design and tape-out | RRAM-Info". www.rram-info.com.

scitation.org

aip.scitation.org

Fully inkjet printed flexible resistive memory -AIP Scitation
Kannan, V; Rhee J K (6 October 2011). "Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory". Applied Physics Letters. 99 (14): 143504. Bibcode:2011ApPhL..99n3504K. doi:10.1063/1.3647629 – via AIP.

semanticscholar.org

api.semanticscholar.org

Lee, H. Y.; Chen, P. S.; Wu, T. Y.; Chen, Y. S.; Wang, C. C.; Tzeng, P. J.; Lin, C. H.; Chen, F.; Lien, C. H.; Tsai, M. J. (2008). "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM". 2008 IEEE International Electron Devices Meeting. pp. 1–4. doi:10.1109/IEDM.2008.4796677. ISBN 978-1-4244-2377-4. S2CID 26927991.
Park, In-Sung; Kim, Kyong-Rae; Lee, Sangsul; Ahn, Jinho (2007). "Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides". Japanese Journal of Applied Physics. 46 (4B): 2172. Bibcode:2007JaJAP..46.2172P. doi:10.1143/JJAP.46.2172. S2CID 122024553.
Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). "Electrical phenomena in amorphous oxide films" (PDF). Reports on Progress in Physics. 33 (3): 1129–1191. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. Archived from the original (PDF) on 2018-03-20. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).
Jung, K. B.; Lee, J. W.; Park, Y. D.; Childress, J. R.; Pearton, S. J.; Jenson, M.; Hurst, A. T. (1 November 1997). "Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications". Journal of Electronic Materials. 26 (11): 1310–1313. Bibcode:1997JEMat..26.1310J. doi:10.1007/s11664-997-0076-x. ISSN 0361-5235. S2CID 93702602.
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (July 2020). "An experimental proof that resistance-switching memories are not memristors". Advanced Electronic Materials. 6 (7). arXiv:1909.07238. doi:10.1002/aelm.202000010. S2CID 202577242.
Shi, Yuanyuan; Ji, Yanfeng; Hui, Fei; Nafria, Montserrat; Porti, Marc; Bersuker, Gennadi; Lanza, Mario (2015-04-01). "In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories". Advanced Electronic Materials. 1 (4): n/a. doi:10.1002/aelm.201400058. ISSN 2199-160X. S2CID 110305072.
Chen, Yu-Sheng; Wu, Tai-Yuan; Tzeng, Pei-Jer; Chen, Pang-Shiu; Lee, H. Y.; Lin, Cha-Hsin; Chen, F.; Tsai, Ming-Jinn (2009). "Forming-free HfO₂ bipolar RRAM device with improved endurance and high speed operation". 2009 International Symposium on VLSI Technology, Systems, and Applications. pp. 37–38. doi:10.1109/VTSA.2009.5159281. ISBN 978-1-4244-2784-0. S2CID 7590725.
Balakrishnan, M.; Thermadam, S. C. P.; Mitkova, M.; Kozicki, M. N. (2006). "A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide". 2006 7th Annual Non-Volatile Memory Technology Symposium. pp. 104–110. doi:10.1109/NVMT.2006.378887. ISBN 978-0-7803-9738-5. S2CID 27573769.
Sills, S.; Yasuda, S.; Strand, J.; Calderoni, A.; Aratani, K.; Johnson, A.; Ramaswamy, N. (2014). "A copper ReRAM cell for Storage Class Memory applications". 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers. pp. 1–2. doi:10.1109/VLSIT.2014.6894368. ISBN 978-1-4799-3332-7. S2CID 9690870.
Mandapati, R.; Shrivastava, S.; Das, B.; Sushama; Ostwal, V.; Schulze, J.; Ganguly, U. (2014). "High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM". 72nd Device Research Conference. pp. 241–242. doi:10.1109/DRC.2014.6872387. ISBN 978-1-4799-5406-3. S2CID 31770873.
Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco M.; Larcher, Luca (2017-01-01). "Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride". Advanced Functional Materials. 27 (10): n/a. doi:10.1002/adfm.201604811. hdl:11380/1129421. ISSN 1616-3028. S2CID 100500198.
Puglisi, F. M.; Larcher, L.; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. (2016-12-01). "2D h-BN based RRAM devices". 2016 IEEE International Electron Devices Meeting (IEDM). pp. 34.8.1–34.8.4. doi:10.1109/IEDM.2016.7838544. hdl:11380/1129447. ISBN 978-1-5090-3902-9. S2CID 28059875.
Tsunoda, K.; Kinoshita, K.; Noshiro, H.; Yamazaki, Y.; Iizuka, T.; Ito, Y.; Takahashi, A.; Okano, A.; Sato, Y.; Fukano, T.; Aoki, M.; Sugiyama, Y. (2007). "Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V". 2007 IEEE International Electron Devices Meeting. pp. 767–770. doi:10.1109/IEDM.2007.4419060. ISBN 978-1-4244-1507-6. S2CID 40684267.
Wei, Z.; Kanzawa, Y.; Arita, K.; Katoh, Y.; Kawai, K.; Muraoka, S.; Mitani, S.; Fujii, S.; Katayama, K.; Iijima, M.; Mikawa, T.; Ninomiya, T.; Miyanaga, R.; Kawashima, Y.; Tsuji, K.; Himeno, A.; Okada, T.; Azuma, R.; Shimakawa, K.; Sugaya, H.; Takagi, T.; Yasuhara, R.; Horiba, K.; Kumigashira, H.; Oshima, M. (2008). "Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism". 2008 IEEE International Electron Devices Meeting. pp. 1–4. doi:10.1109/IEDM.2008.4796676. ISBN 978-1-4244-2377-4. S2CID 30862029.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel I; Ashrafi, Almamun; Zhong, Jian; Lu, Yicheng (2013). "Vertically integrated ZnO-Based 1D1R structure for resistive switching". Journal of Physics D: Applied Physics. 46 (14): 145101. Bibcode:2013JPhD...46n5101Z. doi:10.1088/0022-3727/46/14/145101. S2CID 121110610.
Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Gu, P. Y.; Chen, C. W.; Lin, W. P.; Liu, W. H.; Hsu, Y. Y.; Sheu, S. S.; Chiang, P. C.; Chen, W. S.; Chen, F. T.; Lien, C. H.; Tsai, M. J. (2009). "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity". 2009 IEEE International Electron Devices Meeting (IEDM). pp. 1–4. doi:10.1109/IEDM.2009.5424411. ISBN 978-1-4244-5639-0. S2CID 36391893.
Tappertzhofen, S; Linn, E; Nielen, L; Rosezin, R; Lentz, F; Bruchhaus, R; Valov, I; Böttger, U; Waser, R (2011). "Capacity based nondestructive readout for complementary resistive switches". Nanotechnology. 22 (39): 395203. Bibcode:2011Nanot..22M5203T. doi:10.1088/0957-4484/22/39/395203. PMID 21891857. S2CID 12305490.
Mehonic, Adnan; Cueff, Sébastien; Wojdak, Maciej; Hudziak, Stephen; Labbé, Christophe; Rizk, Richard; Kenyon, Anthony J (2012). "Electrically tailored resistance switching in silicon oxide". Nanotechnology. 23 (45): 455201. Bibcode:2012Nanot..23S5201M. doi:10.1088/0957-4484/23/45/455201. PMID 23064085. S2CID 12528923.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel; Ashrafi, Almamun; Lu, Yicheng (2012). "FeZnO-Based Resistive Switching Devices". Journal of Electronic Materials. 41 (10): 2880. Bibcode:2012JEMat..41.2880Z. doi:10.1007/s11664-012-2045-2. S2CID 95921756.
Chen, F. T.; Chen, Y. S.; Wu, T. Y.; Ku, T. K. (2014). "Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture". IEEE Electron Device Letters. 35 (2): 223–225. Bibcode:2014IEDL...35..223C. doi:10.1109/LED.2013.2294809. ISSN 0741-3106. S2CID 1126533.
Prezioso, M.; et al. (2016). Teherani, Ferechteh H; Look, David C; Rogers, David J (eds.). "RRAM-based Hardware Implementation of Artificial Neural Networks: Progress Updates and Challenges Ahead" (PDF). SPIE Annual Review. Oxide-based Materials and Devices VII. 9749: 974918. Bibcode:2016SPIE.9749E..18P. doi:10.1117/12.2235089. S2CID 20633281. Retrieved June 13, 2021.

pdfs.semanticscholar.org

Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). "Electrical phenomena in amorphous oxide films" (PDF). Reports on Progress in Physics. 33 (3): 1129–1191. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. Archived from the original (PDF) on 2018-03-20. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).

stanford.edu

news.stanford.edu

"Stanford engineers present new chip that ramps up AI computing efficiency". August 18, 2022.

theregister.co.uk

Mellor, Chris (10 October 2011), "HP and Hynix to produce the memristor goods by 2013", The Register, retrieved 2012-03-07

theregister.com

Mellor, Chris. "HP 100TB Memristor drives by 2018 – if you're lucky, admits tech titan". www.theregister.com.

uab.cat

ddd.uab.cat

Lanza, M.; Bersuker, G.; Porti, M.; Miranda, E.; Nafría, M.; Aymerich, X. (2012-11-05). "Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries". Applied Physics Letters. 101 (19): 193502. Bibcode:2012ApPhL.101s3502L. doi:10.1063/1.4765342. ISSN 0003-6951.

ucsb.edu

web.ece.ucsb.edu

Prezioso, M.; et al. (2016). Teherani, Ferechteh H; Look, David C; Rogers, David J (eds.). "RRAM-based Hardware Implementation of Artificial Neural Networks: Progress Updates and Challenges Ahead" (PDF). SPIE Annual Review. Oxide-based Materials and Devices VII. 9749: 974918. Bibcode:2016SPIE.9749E..18P. doi:10.1117/12.2235089. S2CID 20633281. Retrieved June 13, 2021.

uni-augsburg.de

opus.bibliothek.uni-augsburg.de

Cen, C.; Thiel, S.; Hammerl, G.; Schneider, C. W.; Andersen, K. E.; Hellberg, C. S.; Mannhart, J.; Levy, J. (2008). "Nanoscale control of an interfacial metal–insulator transition at room temperature". Nature Materials. 7 (4): 298–302. Bibcode:2008NatMa...7..298C. doi:10.1038/nmat2136. PMID 18311143.

uspto.gov

assignment.uspto.gov

"United States Patent and Trademark Office".

web.archive.org

"Next-gen storage wars: In the battle of RRAM vs 3D NAND flash, all of us are winners" (Press release). PC World. August 9, 2013. Archived from the original on February 2, 2014. Retrieved January 28, 2014.
Simmons, J. G.; Verderber, R. R. (August 1967). "New thin-film resistive memory". Radio and Electronic Engineer. 34 (2): 81–89. doi:10.1049/ree.1967.0069. ISSN 0033-7722. Archived from the original on January 1, 2017.
Lomax, R. W.; Simmons, J. G. (1968). "A thin film, cold cathode, alpha-numeric display panel". Radio and Electronic Engineer. 35 (5): 265–272. doi:10.1049/ree.1968.0039. ISSN 0033-7722. Archived from the original on March 20, 2018.
Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). "Electrical phenomena in amorphous oxide films" (PDF). Reports on Progress in Physics. 33 (3): 1129–1191. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. Archived from the original (PDF) on 2018-03-20. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).
"Advanced Engineering Materials – Wiley Online Library". Aem-journal.com. doi:10.1002/(ISSN)1527-2648. Archived from the original on 2013-04-30. Retrieved 2014-08-13.
"Comparison of Pt/TiOx/Pt vs Pt/TaOx/TaOy/Pt". Archived from the original on 2017-02-13. Retrieved 2017-02-13.

worldcat.org

search.worldcat.org

Nielsen, P. H.; Bashara, N. M. (1964). "The reversible voltage-induced initial resistance in the negative resistance sandwich structure". IEEE Transactions on Electron Devices. 11 (5): 243–244. Bibcode:1964ITED...11..243N. doi:10.1109/T-ED.1964.15319. ISSN 0018-9383.
Simmons, J. G.; Verderber, R. R. (August 1967). "New thin-film resistive memory". Radio and Electronic Engineer. 34 (2): 81–89. doi:10.1049/ree.1967.0069. ISSN 0033-7722. Archived from the original on January 1, 2017.
Lomax, R. W.; Simmons, J. G. (1968). "A thin film, cold cathode, alpha-numeric display panel". Radio and Electronic Engineer. 35 (5): 265–272. doi:10.1049/ree.1968.0039. ISSN 0033-7722. Archived from the original on March 20, 2018.
Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). "Electrical phenomena in amorphous oxide films" (PDF). Reports on Progress in Physics. 33 (3): 1129–1191. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. Archived from the original (PDF) on 2018-03-20. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).
Jung, K. B.; Lee, J. W.; Park, Y. D.; Childress, J. R.; Pearton, S. J.; Jenson, M.; Hurst, A. T. (1 November 1997). "Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications". Journal of Electronic Materials. 26 (11): 1310–1313. Bibcode:1997JEMat..26.1310J. doi:10.1007/s11664-997-0076-x. ISSN 0361-5235. S2CID 93702602.
Lanza, M.; Bersuker, G.; Porti, M.; Miranda, E.; Nafría, M.; Aymerich, X. (2012-11-05). "Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries". Applied Physics Letters. 101 (19): 193502. Bibcode:2012ApPhL.101s3502L. doi:10.1063/1.4765342. ISSN 0003-6951.
Shi, Yuanyuan; Ji, Yanfeng; Hui, Fei; Nafria, Montserrat; Porti, Marc; Bersuker, Gennadi; Lanza, Mario (2015-04-01). "In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories". Advanced Electronic Materials. 1 (4): n/a. doi:10.1002/aelm.201400058. ISSN 2199-160X. S2CID 110305072.
Waser, Rainer; Aono, Masakazu (2007). "Nanoionics-based resistive switching memories". Nature Materials. 6 (11): 833–840. Bibcode:2007NatMa...6..833W. doi:10.1038/nmat2023. ISSN 1476-4660. PMID 17972938.
Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco M.; Larcher, Luca (2017-01-01). "Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride". Advanced Functional Materials. 27 (10): n/a. doi:10.1002/adfm.201604811. hdl:11380/1129421. ISSN 1616-3028. S2CID 100500198.
Chen, F. T.; Chen, Y. S.; Wu, T. Y.; Ku, T. K. (2014). "Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture". IEEE Electron Device Letters. 35 (2): 223–225. Bibcode:2014IEDL...35..223C. doi:10.1109/LED.2013.2294809. ISSN 0741-3106. S2CID 1126533.