Romeira, B.; Slight, J.M.L.; Figueiredo, T.J.; Wasige, L.; Wang, E.; Quintana, C.N.; Ironside, J.M.; Avedillo, M.J. (2008). "Synchronisation and chaos in a laser diode driven by a resonant tunnelling diode". IET Optoelectronics. 2 (6): 211. doi:10.1049/iet-opt:20080024.
Romeira, B.; Figueiredo, J. M. L.; Slight, T. J.; Wang, L.; Wasige, E.; Ironside, C. N.; Quintana, J. M.; Avedillo, M. J. (May 4–9, 2008). "Observation of frequency division and chaos behavior in a laser diode driven by a resonant tunneling diode". 2008 Conference on Lasers and Electro-Optics. pp. 1–2. doi:10.1109/CLEO.2008.4551318. ISBN978-1-55752-859-9. S2CID45107735.
Gennser, Ulf; Kesan, V. P.; Iyer, S. S.; Bucelot, T. J.; Yang, E. S. (1990). "Resonant tunneling of holes through silicon barriers". Journal of Vacuum Science and Technology B. 8 (2): 210. Bibcode:1990JVSTB...8..210G. doi:10.1116/1.584811.
Day, D. J.; Chung, Y.; Webb, C.; Eckstein, J. N.; Xu, J. M.; Sweeny, M. (1990). "Double quantum well resonant tunneling diodes". Applied Physics Letters. 57 (12): 1260. Bibcode:1990ApPhL..57.1260D. doi:10.1063/1.103503.
Tsai, H.H.; Su, Y.K.; Lin, H.H.; Wang, R.L.; Lee, T.L. (1994). "P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature". IEEE Electron Device Letters. 15 (9): 357. Bibcode:1994IEDL...15..357T. doi:10.1109/55.311133. S2CID34825166.
Gennser, Ulf; Kesan, V. P.; Iyer, S. S.; Bucelot, T. J.; Yang, E. S. (1990). "Resonant tunneling of holes through silicon barriers". Journal of Vacuum Science and Technology B. 8 (2): 210. Bibcode:1990JVSTB...8..210G. doi:10.1116/1.584811.
Day, D. J.; Chung, Y.; Webb, C.; Eckstein, J. N.; Xu, J. M.; Sweeny, M. (1990). "Double quantum well resonant tunneling diodes". Applied Physics Letters. 57 (12): 1260. Bibcode:1990ApPhL..57.1260D. doi:10.1063/1.103503.
Tsai, H.H.; Su, Y.K.; Lin, H.H.; Wang, R.L.; Lee, T.L. (1994). "P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature". IEEE Electron Device Letters. 15 (9): 357. Bibcode:1994IEDL...15..357T. doi:10.1109/55.311133. S2CID34825166.
Romeira, B.; Figueiredo, J. M. L.; Slight, T. J.; Wang, L.; Wasige, E.; Ironside, C. N.; Quintana, J. M.; Avedillo, M. J. (May 4–9, 2008). "Observation of frequency division and chaos behavior in a laser diode driven by a resonant tunneling diode". 2008 Conference on Lasers and Electro-Optics. pp. 1–2. doi:10.1109/CLEO.2008.4551318. ISBN978-1-55752-859-9. S2CID45107735.
Tsai, H.H.; Su, Y.K.; Lin, H.H.; Wang, R.L.; Lee, T.L. (1994). "P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature". IEEE Electron Device Letters. 15 (9): 357. Bibcode:1994IEDL...15..357T. doi:10.1109/55.311133. S2CID34825166.
Park, S.-Y.; Chung, S.-Y.; Berger, P.R.; Yu, R.; Thompson, P.E. (2006). "Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodes". Electronics Letters. 42 (12): 719. Bibcode:2006ElL....42..719P. doi:10.1049/el:20060323. S2CID98806257.
Jin, N.; Chung, S.-Y.; Yu, R.; Heyns, R.M.; Berger, P.R.; Thompson, P.E. (2006). "The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits". IEEE Transactions on Electron Devices. 53 (9): 2243. Bibcode:2006ITED...53.2243J. doi:10.1109/TED.2006.879678. S2CID13895250.
S.Y. Chung; R. Yu; N. Jin; S.Y. Park; P.R. Berger & P.E. Thompson (2006). "Si/SiGe Resonant Interband Tunnel Diode with fr0 20.2 GHz and Peak Current Density 218 kA/cm2 for K-band Mixed-Signal Applications". IEEE Electron Device Letters. 27 (5): 364. Bibcode:2006IEDL...27..364C. doi:10.1109/LED.2006.873379. S2CID17627892.
N. Jin; S.Y. Chung; R.M. Heyns; and P.R. Berger; R. Yu; P.E. Thompson & S.L. Rommel (2004). "Tri-State Logic Using Vertically Integrated Si Resonant Interband Tunneling Diodes with Double NDR". IEEE Electron Device Letters. 25 (9): 646. Bibcode:2004IEDL...25..646J. doi:10.1109/LED.2004.833845. S2CID30227.