Scandium nitride (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Scandium nitride" in English language version.

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Gu, Zheng; Edgar, J H; Pomeroy, J; Kuball, M; Coffey, D W (August 2004). "Crystal Growth and Properties of Scandium Nitride". Journal of Materials Science: Materials in Electronics. 15 (8): 555–559. doi:10.1023/B:JMSE.0000032591.54107.2c. S2CID 98462001.
Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN". Physical Review Materials. 3 (2): 020301. Bibcode:2019PhRvM...3b0301B. doi:10.1103/physrevmaterials.3.020301. ISSN 2475-9953. S2CID 139544303.
Zhang, Guodong; Kawamura, Fumio; Oshima, Yuichi; Villora, Encarnacion; Shimamura, Kiyoshi (4 August 2016). "Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts". International Journal of Applied Ceramic Technology. 13 (6): 1134–1138. doi:10.1111/ijac.12576.
Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang (13 January 2006). "Effective Work Function of Scandium Nitride Gate Electrodes on SiO₂ and HfO₂". Japanese Journal of Applied Physics. 45 (2): L83 – L85. Bibcode:2006JaJAP..45L..83Y. doi:10.1143/JJAP.45.L83. S2CID 121206924.
Savant, Chandrashekhar P.; Verma, Anita; Nguyen, Thai-Son; van Deurzen, Len; Chen, Yu-Hsin; He, Zhiren; Rezaie, Salva S.; Gollwitzer, Jakob; Gregory, Benjamin; Sarker, Suchismita; Ruff, Jacob; Khalsa, Guru; Singer, Andrej; Muller, David A.; Xing, Huili G. (2024-11-06). "Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures". APL Materials. 12 (11): 111108. doi:10.1063/5.0222995. ISSN 2166-532X.

Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN". Physical Review Materials. 3 (2): 020301. Bibcode:2019PhRvM...3b0301B. doi:10.1103/physrevmaterials.3.020301. ISSN 2475-9953. S2CID 139544303.
Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang (13 January 2006). "Effective Work Function of Scandium Nitride Gate Electrodes on SiO₂ and HfO₂". Japanese Journal of Applied Physics. 45 (2): L83 – L85. Bibcode:2006JaJAP..45L..83Y. doi:10.1143/JJAP.45.L83. S2CID 121206924.

Gu, Zheng; Edgar, J H; Pomeroy, J; Kuball, M; Coffey, D W (August 2004). "Crystal Growth and Properties of Scandium Nitride". Journal of Materials Science: Materials in Electronics. 15 (8): 555–559. doi:10.1023/B:JMSE.0000032591.54107.2c. S2CID 98462001.
Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN". Physical Review Materials. 3 (2): 020301. Bibcode:2019PhRvM...3b0301B. doi:10.1103/physrevmaterials.3.020301. ISSN 2475-9953. S2CID 139544303.
Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang (13 January 2006). "Effective Work Function of Scandium Nitride Gate Electrodes on SiO₂ and HfO₂". Japanese Journal of Applied Physics. 45 (2): L83 – L85. Bibcode:2006JaJAP..45L..83Y. doi:10.1143/JJAP.45.L83. S2CID 121206924.

Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN". Physical Review Materials. 3 (2): 020301. Bibcode:2019PhRvM...3b0301B. doi:10.1103/physrevmaterials.3.020301. ISSN 2475-9953. S2CID 139544303.
Savant, Chandrashekhar P.; Verma, Anita; Nguyen, Thai-Son; van Deurzen, Len; Chen, Yu-Hsin; He, Zhiren; Rezaie, Salva S.; Gollwitzer, Jakob; Gregory, Benjamin; Sarker, Suchismita; Ruff, Jacob; Khalsa, Guru; Singer, Andrej; Muller, David A.; Xing, Huili G. (2024-11-06). "Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures". APL Materials. 12 (11): 111108. doi:10.1063/5.0222995. ISSN 2166-532X.