Semiconductor device (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Semiconductor device" in English language version.

refsWebsite

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14doi.org

2^nd place

9semanticscholar.org

11^th place

8^th place

8books.google.com

3^rd place

8ieee.org

652^nd place

515^th place

4computerhistory.org

2,213^th place

1,495^th place

4worldcat.org

5^th place

3web.archive.org

1^st place

2harvard.edu

18^th place

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2iop.org

1,725^th place

1,828^th place

2espacenet.com

800^th place

676^th place

1icinsights.com

low place

1navitassemi.com

low place

1epc-co.com

low place

1chinawaterrisk.org

low place

1hitachi.com

low place

1psu.edu

207^th place

136^th place

1patents.google.com

1,182^nd place

725^th place

1elsevier.com

610^th place

704^th place

1eetimes.com

3,722^nd place

2,509^th place

1invent.org

8,673^rd place

5,941^st place

1uspto.gov

1,459^th place

991^st place

1intel.com

1,118^th place

825^th place

1ghostarchive.org

32^nd place

21^st place

books.google.com

Golio, Mike; Golio, Janet (2018). RF and Microwave Passive and Active Technologies. CRC Press. p. 18-2. ISBN 9781420006728.
Souk, Jun; Morozumi, Shinji; Luo, Fang-Chen; Bita, Ion (24 September 2018). Flat Panel Display Manufacturing. John Wiley & Sons. ISBN 978-1-119-16134-9.
Ernest Braun & Stuart MacDonald (1982). Revolution in Miniature: The History and Impact of Semiconductor Electronics. Cambridge University Press. pp. 11–13. ISBN 978-0-521-28903-0.
Moskowitz, Sanford L. (2016). Advanced Materials Innovation: Managing Global Technology in the 21st century. John Wiley & Sons. p. 168. ISBN 978-0-470-50892-3.
Christophe Lécuyer; David C. Brook; Jay Last (2010). Makers of the Microchip: A Documentary History of Fairchild Semiconductor. MIT Press. pp. 62–63. ISBN 978-0-262-01424-3.
Claeys, Cor L. (2003). ULSI Process Integration III: Proceedings of the International Symposium. The Electrochemical Society. pp. 27–30. ISBN 978-1-56677-376-8.
Deal, Bruce E. (1998). "Highlights Of Silicon Thermal Oxidation Technology". Silicon materials science and technology. The Electrochemical Society. p. 183. ISBN 978-1566771931.
Bassett, Ross Knox (2007). To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology. Johns Hopkins University Press. pp. 22–23. ISBN 978-0-8018-8639-3.

chinawaterrisk.org

"8 Things You Should Know About Water & Semiconductors". China Water Risk. 11 July 2013. Retrieved 2023-01-21.

computerhistory.org

"Who Invented the Transistor?". Computer History Museum. 4 December 2013. Retrieved 20 July 2019.
"13 Sextillion & Counting: The Long & Winding Road to the Most Frequently Manufactured Human Artifact in History". Computer History Museum. April 2, 2018. Retrieved 28 July 2019.
"1960 – Metal Oxide Semiconductor (MOS) Transistor Demonstrated". The Silicon Engine. Computer History Museum. Retrieved 2023-01-16.
"1963: Complementary MOS Circuit Configuration is Invented". Computer History Museum. Retrieved 6 July 2019.

doi.org

Hendrik Purwins; Bernd Barak; Ahmed Nagi; Reiner Engel; Uwe Höckele; Andreas Kyek; Srikanth Cherla; Benjamin Lenz; Günter Pfeifer; Kurt Weinzierl (2014). "Regression Methods for Virtual Metrology of Layer Thickness in Chemical Vapor Deposition". IEEE/ASME Transactions on Mechatronics. 19 (1): 1–8. doi:10.1109/TMECH.2013.2273435. S2CID 12369827. Retrieved November 9, 2015.
Lei, Wei-Sheng; Kumar, Ajay; Yalamanchili, Rao (2012-04-06). "Die singulation technologies for advanced packaging: A critical review". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30 (4): 040801. Bibcode:2012JVSTB..30d0801L. doi:10.1116/1.3700230. ISSN 2166-2746.
Wang, H. P.; Kim, S. C.; Liu, B. (2014). Advanced FOUP purge using diffusers for FOUP door-off application. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). pp. 120–124. doi:10.1109/ASMC.2014.6846999. ISBN 978-1-4799-3944-2. S2CID 2482339.
Lin, Tee; Fu, Ben-Ran; Hu, Shih-Cheng; Tang, Yi-Han (2018). "Moisture Prevention in a Pre-Purged Front-Opening Unified Pod (FOUP) During Door Opening in a Mini-Environment". IEEE Transactions on Semiconductor Manufacturing. 31 (1): 108–115. doi:10.1109/TSM.2018.2791985. S2CID 25469704.
Kim, Seong Chan; Schelske, Greg (2016). FOUP purge performance improvement using EFEM flow converter. 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). pp. 6–11. doi:10.1109/ASMC.2016.7491075. ISBN 978-1-5090-0270-2. S2CID 3240442.
Benalcazar, David; Lin, Tee; Hu, Ming-Hsuan; Ali Zargar, Omid; Lin, Shao-Yu; Shih, Yang-Cheng; Leggett, Graham (2022). "A Numerical Study on the Effects of Purge and Air Curtain Flow Rates on Humidity Invasion Into a Front Opening Unified Pod (FOUP)". IEEE Transactions on Semiconductor Manufacturing. 35 (4): 670–679. doi:10.1109/TSM.2022.3209221. S2CID 252555815.
Lin, Tee; Ali Zargar, Omid; Juina, Oscar; Lee, Tzu-Chieh; Sabusap, Dexter Lyndon; Hu, Shih-Cheng; Leggett, Graham (2020). "Performance of Different Front-Opening Unified Pod (FOUP) Moisture Removal Techniques With Local Exhaust Ventilation System". IEEE Transactions on Semiconductor Manufacturing. 33 (2): 310–315. doi:10.1109/TSM.2020.2977122. S2CID 213026336.
Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite journal}}: ISBN / Date incompatibility (help)
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)" (PDF). Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721. Archived from the original (PDF) on 2019-07-19.
Howard R. Duff (2001). "John Bardeen and transistor physics". AIP Conference Proceedings. Vol. 550. pp. 3–32. doi:10.1063/1.1354371.
Farrah, H. R.; Steinberg, R. F. (February 1967). "Analysis of double-gate thin-film transistor". IEEE Transactions on Electron Devices. 14 (2): 69–74. Bibcode:1967ITED...14...69F. doi:10.1109/T-ED.1967.15901.

eetimes.com

"Transistors Keep Moore's Law Alive". EETimes. 12 December 2018. Retrieved 18 July 2019.

elsevier.com

linkinghub.elsevier.com

Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.

epc-co.com

"What is GaN? Gallium Nitride (GaN) Semiconductors Explained". Efficient Power Conversion. Retrieved May 2, 2023.

espacenet.com

worldwide.espacenet.com

US 3025589 Hoerni, J. A.: "Method of Manufacturing Semiconductor Devices” filed May 1, 1959
US 3064167 Hoerni, J. A.: "Semiconductor device" filed May 15, 1960

ghostarchive.org

"The Breakthrough Advantage for FPGAs with Tri-Gate Technology" (PDF). Intel. 2014. Archived (PDF) from the original on 2022-10-09. Retrieved 4 July 2019.

harvard.edu

ui.adsabs.harvard.edu

Lei, Wei-Sheng; Kumar, Ajay; Yalamanchili, Rao (2012-04-06). "Die singulation technologies for advanced packaging: A critical review". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30 (4): 040801. Bibcode:2012JVSTB..30d0801L. doi:10.1116/1.3700230. ISSN 2166-2746.
Farrah, H. R.; Steinberg, R. F. (February 1967). "Analysis of double-gate thin-film transistor". IEEE Transactions on Electron Devices. 14 (2): 69–74. Bibcode:1967ITED...14...69F. doi:10.1109/T-ED.1967.15901.

hitachi.com

Kure, Tokuo; Hanaoka, Hideo; Sugiura, Takumi; Nakagawa, Shinya (2007). "Clean-room Technologies for the Mini-environment Age" (PDF). Hitachi Review. 56 (3): 70–74. CiteSeerX 10.1.1.493.1460. S2CID 30883737. Archived (PDF) from the original on 2021-11-01. Retrieved 2021-11-01.

icinsights.com

"Semiconductor Shipments Forecast to Exceed 1 Trillion Devices in 2018". www.icinsights.com. Retrieved 2018-04-16. Annual semiconductor unit shipments (integrated circuits and Opto-sensor-discrete, or O-S-D, devices) are expected to grow 9% [..] For 2018, semiconductor unit shipments are forecast to climb to 1,075.1 billion, which equates to 9% growth for the year. Starting in 1978 with 32.6 billion units and going through 2018, the compound annual growth rate for semiconductor units is forecast to be 9.1%, a solid growth figure over the 40-year span. [..] In 2018, O-S-D devices are forecast to account for 70% of total semiconductor units compared to 30% for ICs.

ieee.org

ieeexplore.ieee.org

Hendrik Purwins; Bernd Barak; Ahmed Nagi; Reiner Engel; Uwe Höckele; Andreas Kyek; Srikanth Cherla; Benjamin Lenz; Günter Pfeifer; Kurt Weinzierl (2014). "Regression Methods for Virtual Metrology of Layer Thickness in Chemical Vapor Deposition". IEEE/ASME Transactions on Mechatronics. 19 (1): 1–8. doi:10.1109/TMECH.2013.2273435. S2CID 12369827. Retrieved November 9, 2015.
Wang, H. P.; Kim, S. C.; Liu, B. (2014). Advanced FOUP purge using diffusers for FOUP door-off application. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). pp. 120–124. doi:10.1109/ASMC.2014.6846999. ISBN 978-1-4799-3944-2. S2CID 2482339.
450mm FOUP/LPU system in advanced semiconductor manufacturing processes: A study on the minimization of oxygen content inside FOUP when the door is opened. 2015 Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & 2015 International Symposium on Semiconductor Manufacturing (ISSM).
Lin, Tee; Fu, Ben-Ran; Hu, Shih-Cheng; Tang, Yi-Han (2018). "Moisture Prevention in a Pre-Purged Front-Opening Unified Pod (FOUP) During Door Opening in a Mini-Environment". IEEE Transactions on Semiconductor Manufacturing. 31 (1): 108–115. doi:10.1109/TSM.2018.2791985. S2CID 25469704.
Kim, Seong Chan; Schelske, Greg (2016). FOUP purge performance improvement using EFEM flow converter. 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). pp. 6–11. doi:10.1109/ASMC.2016.7491075. ISBN 978-1-5090-0270-2. S2CID 3240442.
Benalcazar, David; Lin, Tee; Hu, Ming-Hsuan; Ali Zargar, Omid; Lin, Shao-Yu; Shih, Yang-Cheng; Leggett, Graham (2022). "A Numerical Study on the Effects of Purge and Air Curtain Flow Rates on Humidity Invasion Into a Front Opening Unified Pod (FOUP)". IEEE Transactions on Semiconductor Manufacturing. 35 (4): 670–679. doi:10.1109/TSM.2022.3209221. S2CID 252555815.
Lin, Tee; Ali Zargar, Omid; Juina, Oscar; Lee, Tzu-Chieh; Sabusap, Dexter Lyndon; Hu, Shih-Cheng; Leggett, Graham (2020). "Performance of Different Front-Opening Unified Pod (FOUP) Moisture Removal Techniques With Local Exhaust Ventilation System". IEEE Transactions on Semiconductor Manufacturing. 33 (2): 310–315. doi:10.1109/TSM.2020.2977122. S2CID 213026336.

ieee.org

"IEEE Andrew S. Grove Award Recipients". IEEE Andrew S. Grove Award. Institute of Electrical and Electronics Engineers. Archived from the original on September 9, 2018. Retrieved 4 July 2019.

intel.com

"The Breakthrough Advantage for FPGAs with Tri-Gate Technology" (PDF). Intel. 2014. Archived (PDF) from the original on 2022-10-09. Retrieved 4 July 2019.

invent.org

"Dawon Kahng". National Inventors Hall of Fame. Retrieved 27 June 2019.

iop.org

iopscience.iop.org

Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.

navitassemi.com

"Gallium nitride semiconductors: The Next Generation of Power | Navitas". 19 March 2021. Retrieved 2023-05-02.

patents.google.com

US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13

psu.edu

citeseerx.ist.psu.edu

Kure, Tokuo; Hanaoka, Hideo; Sugiura, Takumi; Nakagawa, Shinya (2007). "Clean-room Technologies for the Mini-environment Age" (PDF). Hitachi Review. 56 (3): 70–74. CiteSeerX 10.1.1.493.1460. S2CID 30883737. Archived (PDF) from the original on 2021-11-01. Retrieved 2021-11-01.

semanticscholar.org

api.semanticscholar.org

Hendrik Purwins; Bernd Barak; Ahmed Nagi; Reiner Engel; Uwe Höckele; Andreas Kyek; Srikanth Cherla; Benjamin Lenz; Günter Pfeifer; Kurt Weinzierl (2014). "Regression Methods for Virtual Metrology of Layer Thickness in Chemical Vapor Deposition". IEEE/ASME Transactions on Mechatronics. 19 (1): 1–8. doi:10.1109/TMECH.2013.2273435. S2CID 12369827. Retrieved November 9, 2015.
Wang, H. P.; Kim, S. C.; Liu, B. (2014). Advanced FOUP purge using diffusers for FOUP door-off application. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). pp. 120–124. doi:10.1109/ASMC.2014.6846999. ISBN 978-1-4799-3944-2. S2CID 2482339.
Lin, Tee; Fu, Ben-Ran; Hu, Shih-Cheng; Tang, Yi-Han (2018). "Moisture Prevention in a Pre-Purged Front-Opening Unified Pod (FOUP) During Door Opening in a Mini-Environment". IEEE Transactions on Semiconductor Manufacturing. 31 (1): 108–115. doi:10.1109/TSM.2018.2791985. S2CID 25469704.
Kure, Tokuo; Hanaoka, Hideo; Sugiura, Takumi; Nakagawa, Shinya (2007). "Clean-room Technologies for the Mini-environment Age" (PDF). Hitachi Review. 56 (3): 70–74. CiteSeerX 10.1.1.493.1460. S2CID 30883737. Archived (PDF) from the original on 2021-11-01. Retrieved 2021-11-01.
Kim, Seong Chan; Schelske, Greg (2016). FOUP purge performance improvement using EFEM flow converter. 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). pp. 6–11. doi:10.1109/ASMC.2016.7491075. ISBN 978-1-5090-0270-2. S2CID 3240442.
Benalcazar, David; Lin, Tee; Hu, Ming-Hsuan; Ali Zargar, Omid; Lin, Shao-Yu; Shih, Yang-Cheng; Leggett, Graham (2022). "A Numerical Study on the Effects of Purge and Air Curtain Flow Rates on Humidity Invasion Into a Front Opening Unified Pod (FOUP)". IEEE Transactions on Semiconductor Manufacturing. 35 (4): 670–679. doi:10.1109/TSM.2022.3209221. S2CID 252555815.
Lin, Tee; Ali Zargar, Omid; Juina, Oscar; Lee, Tzu-Chieh; Sabusap, Dexter Lyndon; Hu, Shih-Cheng; Leggett, Graham (2020). "Performance of Different Front-Opening Unified Pod (FOUP) Moisture Removal Techniques With Local Exhaust Ventilation System". IEEE Transactions on Semiconductor Manufacturing. 33 (2): 310–315. doi:10.1109/TSM.2020.2977122. S2CID 213026336.
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)" (PDF). Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721. Archived from the original (PDF) on 2019-07-19.

pdfs.semanticscholar.org

Motoyoshi, M. (2009). "Through-Silicon Via (TSV)" (PDF). Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721. Archived from the original (PDF) on 2019-07-19.

uspto.gov

"Remarks by Director Iancu at the 2019 International Intellectual Property Conference". United States Patent and Trademark Office. June 10, 2019. Retrieved 20 July 2019.

web.archive.org

Kure, Tokuo; Hanaoka, Hideo; Sugiura, Takumi; Nakagawa, Shinya (2007). "Clean-room Technologies for the Mini-environment Age" (PDF). Hitachi Review. 56 (3): 70–74. CiteSeerX 10.1.1.493.1460. S2CID 30883737. Archived (PDF) from the original on 2021-11-01. Retrieved 2021-11-01.
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)" (PDF). Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721. Archived from the original (PDF) on 2019-07-19.
"IEEE Andrew S. Grove Award Recipients". IEEE Andrew S. Grove Award. Institute of Electrical and Electronics Engineers. Archived from the original on September 9, 2018. Retrieved 4 July 2019.

worldcat.org

search.worldcat.org

Lei, Wei-Sheng; Kumar, Ajay; Yalamanchili, Rao (2012-04-06). "Die singulation technologies for advanced packaging: A critical review". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30 (4): 040801. Bibcode:2012JVSTB..30d0801L. doi:10.1116/1.3700230. ISSN 2166-2746.
Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)" (PDF). Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721. Archived from the original (PDF) on 2019-07-19.