Sign In

Login

Password

Forgot Password ? Sign Up

Silicon-tin (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Silicon-tin" in English language version.

refsWebsite
Global rank English rank
13doi.org
2nd place
2nd place
11harvard.edu
18th place
17th place
5semanticscholar.org
11th place
8th place
1nih.gov
4th place
4th place
1kaust.edu.sa
low place
low place
1handle.net
102nd place
76th place
1open.ac.uk
4,356th place
2,724th place

doi.org

  • Jensen, Rasmus V S; Pedersen, Thomas G; Larsen, Arne N (31 August 2011). "Quasiparticle electronic and optical properties of the Si–Sn system". Journal of Physics: Condensed Matter. 23 (34): 345501. Bibcode:2011JPCM...23H5501J. doi:10.1088/0953-8984/23/34/345501. PMID 21841232. S2CID 36811872.
  • Amrane, Na.; Ait Abderrahmane, S.; Aourag, H. (August 1995). "Band structure calculation of GeSn and SiSn". Infrared Physics & Technology. 36 (5): 843–848. Bibcode:1995InPhT..36..843A. doi:10.1016/1350-4495(95)00019-U.
  • Zaoui, A.; Ferhat, M.; Certier, M.; Khelifa, B.; Aourag, H. (June 1996). "Optical properties of SiSn and GeSn". Infrared Physics & Technology. 37 (4): 483–488. Bibcode:1996InPhT..37..483Z. doi:10.1016/1350-4495(95)00116-6.
  • Hussain, Aftab M.; Wehbe, Nimer; Hussain, Muhammad M. (24 August 2015). "SiSn diodes: Theoretical analysis and experimental verification" (PDF). Applied Physics Letters. 107 (8): 082111. Bibcode:2015ApPhL.107h2111H. doi:10.1063/1.4929801. hdl:10754/576462.
  • Claeys, C.; Simoen, E.; Neimash, V. B.; Kraitchinskii, A.; Kras’ko, M.; Puzenko, O.; Blondeel, A.; Clauws, P. (2001). "Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness". Journal of the Electrochemical Society. 148 (12): G738. Bibcode:2001JElS..148G.738C. doi:10.1149/1.1417558.
  • Chroneos, A.; Londos, C. A.; Sgourou, E. N. (2011). "Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon" (PDF). Journal of Applied Physics. 110 (9): 093507–093507–8. Bibcode:2011JAP...110i3507C. doi:10.1063/1.3658261.
  • Kringhøj, Per; Larsen, Arne (September 1997). "Anomalous diffusion of tin in silicon". Physical Review B. 56 (11): 6396–6399. Bibcode:1997PhRvB..56.6396K. doi:10.1103/PhysRevB.56.6396.
  • Yeh, T. H. (1968). "Diffusion of Tin into Silicon". Journal of Applied Physics. 39 (9): 4266–4271. Bibcode:1968JAP....39.4266Y. doi:10.1063/1.1656959.
  • Akasaka, Youichi; Horie, Kazuo; Nakamura, Genshiro; Tsukamoto, Katsuhiro; Yukimoto, Yoshinori (October 1974). "Study of Tin Diffusion into Silicon by Backscattering Analysis". Japanese Journal of Applied Physics. 13 (10): 1533–1540. Bibcode:1974JaJAP..13.1533A. doi:10.1143/JJAP.13.1533. S2CID 121383273.
  • Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo A. Torres; Schwingenschlögl, Udo; Hussain, Muhammad M. (2013). "Exploring SiSn as channel material for LSTP device applications". 71st Device Research Conference. pp. 93–94. doi:10.1109/DRC.2013.6633809. ISBN 978-1-4799-0814-1. S2CID 42075329.
  • Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo A. Torres; Schwingenschlögl, Udo; Hussain, Muhammad M. (13 January 2014). "Tin - an unlikely ally for silicon field effect transistors?". Physica Status Solidi RRL. 8 (4): 332–335. Bibcode:2014PSSRR...8..332H. doi:10.1002/pssr.201308300. S2CID 93729786.
  • Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo A. Torres; Schwingenschlögl, Udo; Hussain, Muhammad M. (2013). "Tin (Sn) for enhancing performance in silicon CMOS". 2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC). pp. 13–15. doi:10.1109/NMDC.2013.6707470. ISBN 978-1-4799-3387-7. S2CID 21059449.
  • Khatami, S. N. (2016). "Lattice Thermal Conductivity of the Binary and Ternary Group-IV Alloys Si-Sn, Ge-Sn, and Si-Ge-Sn". Physical Review Applied. 6 (1): 014015. Bibcode:2016PhRvP...6a4015K. doi:10.1103/physrevapplied.6.014015.

handle.net

hdl.handle.net

harvard.edu

ui.adsabs.harvard.edu

  • Jensen, Rasmus V S; Pedersen, Thomas G; Larsen, Arne N (31 August 2011). "Quasiparticle electronic and optical properties of the Si–Sn system". Journal of Physics: Condensed Matter. 23 (34): 345501. Bibcode:2011JPCM...23H5501J. doi:10.1088/0953-8984/23/34/345501. PMID 21841232. S2CID 36811872.
  • Amrane, Na.; Ait Abderrahmane, S.; Aourag, H. (August 1995). "Band structure calculation of GeSn and SiSn". Infrared Physics & Technology. 36 (5): 843–848. Bibcode:1995InPhT..36..843A. doi:10.1016/1350-4495(95)00019-U.
  • Zaoui, A.; Ferhat, M.; Certier, M.; Khelifa, B.; Aourag, H. (June 1996). "Optical properties of SiSn and GeSn". Infrared Physics & Technology. 37 (4): 483–488. Bibcode:1996InPhT..37..483Z. doi:10.1016/1350-4495(95)00116-6.
  • Hussain, Aftab M.; Wehbe, Nimer; Hussain, Muhammad M. (24 August 2015). "SiSn diodes: Theoretical analysis and experimental verification" (PDF). Applied Physics Letters. 107 (8): 082111. Bibcode:2015ApPhL.107h2111H. doi:10.1063/1.4929801. hdl:10754/576462.
  • Claeys, C.; Simoen, E.; Neimash, V. B.; Kraitchinskii, A.; Kras’ko, M.; Puzenko, O.; Blondeel, A.; Clauws, P. (2001). "Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness". Journal of the Electrochemical Society. 148 (12): G738. Bibcode:2001JElS..148G.738C. doi:10.1149/1.1417558.
  • Chroneos, A.; Londos, C. A.; Sgourou, E. N. (2011). "Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon" (PDF). Journal of Applied Physics. 110 (9): 093507–093507–8. Bibcode:2011JAP...110i3507C. doi:10.1063/1.3658261.
  • Kringhøj, Per; Larsen, Arne (September 1997). "Anomalous diffusion of tin in silicon". Physical Review B. 56 (11): 6396–6399. Bibcode:1997PhRvB..56.6396K. doi:10.1103/PhysRevB.56.6396.
  • Yeh, T. H. (1968). "Diffusion of Tin into Silicon". Journal of Applied Physics. 39 (9): 4266–4271. Bibcode:1968JAP....39.4266Y. doi:10.1063/1.1656959.
  • Akasaka, Youichi; Horie, Kazuo; Nakamura, Genshiro; Tsukamoto, Katsuhiro; Yukimoto, Yoshinori (October 1974). "Study of Tin Diffusion into Silicon by Backscattering Analysis". Japanese Journal of Applied Physics. 13 (10): 1533–1540. Bibcode:1974JaJAP..13.1533A. doi:10.1143/JJAP.13.1533. S2CID 121383273.
  • Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo A. Torres; Schwingenschlögl, Udo; Hussain, Muhammad M. (13 January 2014). "Tin - an unlikely ally for silicon field effect transistors?". Physica Status Solidi RRL. 8 (4): 332–335. Bibcode:2014PSSRR...8..332H. doi:10.1002/pssr.201308300. S2CID 93729786.
  • Khatami, S. N. (2016). "Lattice Thermal Conductivity of the Binary and Ternary Group-IV Alloys Si-Sn, Ge-Sn, and Si-Ge-Sn". Physical Review Applied. 6 (1): 014015. Bibcode:2016PhRvP...6a4015K. doi:10.1103/physrevapplied.6.014015.

kaust.edu.sa

repository.kaust.edu.sa

nih.gov

pubmed.ncbi.nlm.nih.gov

  • Jensen, Rasmus V S; Pedersen, Thomas G; Larsen, Arne N (31 August 2011). "Quasiparticle electronic and optical properties of the Si–Sn system". Journal of Physics: Condensed Matter. 23 (34): 345501. Bibcode:2011JPCM...23H5501J. doi:10.1088/0953-8984/23/34/345501. PMID 21841232. S2CID 36811872.

open.ac.uk

oro.open.ac.uk

semanticscholar.org

api.semanticscholar.org

  • Jensen, Rasmus V S; Pedersen, Thomas G; Larsen, Arne N (31 August 2011). "Quasiparticle electronic and optical properties of the Si–Sn system". Journal of Physics: Condensed Matter. 23 (34): 345501. Bibcode:2011JPCM...23H5501J. doi:10.1088/0953-8984/23/34/345501. PMID 21841232. S2CID 36811872.
  • Akasaka, Youichi; Horie, Kazuo; Nakamura, Genshiro; Tsukamoto, Katsuhiro; Yukimoto, Yoshinori (October 1974). "Study of Tin Diffusion into Silicon by Backscattering Analysis". Japanese Journal of Applied Physics. 13 (10): 1533–1540. Bibcode:1974JaJAP..13.1533A. doi:10.1143/JJAP.13.1533. S2CID 121383273.
  • Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo A. Torres; Schwingenschlögl, Udo; Hussain, Muhammad M. (2013). "Exploring SiSn as channel material for LSTP device applications". 71st Device Research Conference. pp. 93–94. doi:10.1109/DRC.2013.6633809. ISBN 978-1-4799-0814-1. S2CID 42075329.
  • Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo A. Torres; Schwingenschlögl, Udo; Hussain, Muhammad M. (13 January 2014). "Tin - an unlikely ally for silicon field effect transistors?". Physica Status Solidi RRL. 8 (4): 332–335. Bibcode:2014PSSRR...8..332H. doi:10.1002/pssr.201308300. S2CID 93729786.
  • Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo A. Torres; Schwingenschlögl, Udo; Hussain, Muhammad M. (2013). "Tin (Sn) for enhancing performance in silicon CMOS". 2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC). pp. 13–15. doi:10.1109/NMDC.2013.6707470. ISBN 978-1-4799-3387-7. S2CID 21059449.