Silicon carbide (English Wikipedia)

Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru (2008). "Superconductivity in heavily boron-doped silicon carbide". Science and Technology of Advanced Materials. 9 (4): 044205. arXiv:0810.0056. Bibcode:2008STAdM...9d4205K. doi:10.1088/1468-6996/9/4/044205. PMC 5099636. PMID 27878022.
Hanaor, Dorian A.H.; Xu, Wanqiang; Ferry, Michael; Sorrell, Charles C. (2012). "Abnormal grain growth of rutile TiO2 induced by ZrSiO4". Journal of Crystal Growth. 359: 83–91. arXiv:1303.2761. Bibcode:2012JCrGr.359...83H. doi:10.1016/j.jcrysgro.2012.08.015. S2CID 94096447.
de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna (July 2007). "Epitaxial graphene". Solid State Communications. 143 (1–2): 92–100. arXiv:0704.0285. Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. ISSN 0038-1098. S2CID 44542277.
Lohrmann, A.; Iwamoto, N.; Bodrog, Z.; Castalletto, S.; Ohshima, T.; Karle, T.J.; Gali, A.; Prawer, S.; McCallum, J.C.; Johnson, B.C. (2015). "Single-photon emitting diode in silicon carbide". Nature Communications. 6: 7783. arXiv:1503.07566. Bibcode:2015NatCo...6.7783L. doi:10.1038/ncomms8783. PMID 26205309. S2CID 205338373.
Davidsson, J.; Ivády, V.; Armiento, R.; Son, N.T.; Gali, A.; Abrikosov, I. A. (2018). "First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC". New Journal of Physics. 20 (2): 023035. arXiv:1708.04508. Bibcode:2018NJPh...20b3035D. doi:10.1088/1367-2630/aaa752. S2CID 4867492.

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Harris, Gary Lynn (1995). Properties of silicon carbide. IET. p. 19; 170–180. ISBN 978-0-85296-870-3.
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Friedrichs, Peter; Kimoto, Tsunenobu; Ley, Lothar; Pensl, Gerhard (2011). Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications. John Wiley & Sons. pp. 49–. ISBN 978-3-527-62906-0.
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Di Pierro S.; Gnos E.; Grobety B.H.; Armbruster T.; Bernasconi S.M. & Ulmer P. (2003). "Rock-forming moissanite (natural α-silicon carbide)". American Mineralogist. 88 (11–12): 1817–21. Bibcode:2003AmMin..88.1817D. doi:10.2138/am-2003-11-1223. S2CID 128600868.
Mabery, Charles F. (1900). "Notes, On Carborundum". Journal of the American Chemical Society. XXII (Part II): 706–707. doi:10.1021/ja02048a014. Retrieved 2007-10-28.
Vlasov, A.S.; et al. (1991). "Obtaining silicon carbide from rice husks". Refractories and Industrial Ceramics. 32 (9–10): 521–523. doi:10.1007/bf01287542. S2CID 135784055.
Zhong, Y.; Shaw, Leon L.; Manjarres, Misael & Zawrah, Mahmoud F. (2010). "Synthesis of Silicon Carbide Nanopowder Using Silica Fume". Journal of the American Ceramic Society. 93 (10): 3159–3167. doi:10.1111/j.1551-2916.2010.03867.x.
Pitcher, M. W.; Joray, S. J.; Bianconi, P. A. (2004). "Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne)". Advanced Materials. 16 (8): 706–709. Bibcode:2004AdM....16..706P. doi:10.1002/adma.200306467. S2CID 97161599.
Bunsell, A. R.; Piant, A. (2006). "A review of the development of three generations of small diameter silicon carbide fibres". Journal of Materials Science. 41 (3): 823–839. Bibcode:2006JMatS..41..823B. doi:10.1007/s10853-006-6566-z. S2CID 135586321.
Laine, Richard M.; Babonneau, Florence (1993). "Preceramic polymer routes to silicon carbide". Chemistry of Materials. 5 (3): 260–279. doi:10.1021/cm00027a007.
Morkoç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. (1994). "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies". Journal of Applied Physics. 76 (3): 1363. Bibcode:1994JAP....76.1363M. doi:10.1063/1.358463.
Muranaka, T.; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun (2008). "Superconductivity in carrier-doped silicon carbide". Sci. Technol. Adv. Mater. 9 (4): 044204. Bibcode:2008STAdM...9d4204M. doi:10.1088/1468-6996/9/4/044204. PMC 5099635. PMID 27878021.
Zheng, Qiye; Li, Chunhua; Rai, Akash; Leach, Jacob H.; Broido, David A.; Cahill, David G. (2019-01-03). "Thermal conductivity of GaN, $^{71}\mathrm{GaN}$, and SiC from 150 K to 850 K". Physical Review Materials. 3 (1): 014601. doi:10.1103/PhysRevMaterials.3.014601. S2CID 139945430.
Neumeier, J.J.; Shvyd'ko, Y.V.; Haskel, Daniel (2024). "Thermal expansion of 4H and 6H SiC from 5 K to 340 K". Journal of Physics and Chemistry of Solids. 187 (1): 11860. Bibcode:2024JPCS..18711860N. doi:10.1016/j.jpcs.2023.111860. S2CID 267488637.
Bhatnagar, M.; Baliga, B.J. (March 1993). "Comparison of 6H-SiC, 3C-SiC, and Si for power devices". IEEE Transactions on Electron Devices. 40 (3): 645–655. Bibcode:1993ITED...40..645B. doi:10.1109/16.199372.
Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru (2008). "Superconductivity in heavily boron-doped silicon carbide". Science and Technology of Advanced Materials. 9 (4): 044205. arXiv:0810.0056. Bibcode:2008STAdM...9d4205K. doi:10.1088/1468-6996/9/4/044205. PMC 5099636. PMID 27878022.
Yanase, Y. & Yorozu, N. (2008). "Superconductivity in compensated and uncompensated semiconductors". Science and Technology of Advanced Materials. 9 (4): 044201. Bibcode:2008STAdM...9d4201Y. doi:10.1088/1468-6996/9/4/044201. PMC 5099632. PMID 27878018.
Hanaor, Dorian A.H.; Xu, Wanqiang; Ferry, Michael; Sorrell, Charles C. (2012). "Abnormal grain growth of rutile TiO2 induced by ZrSiO4". Journal of Crystal Growth. 359: 83–91. arXiv:1303.2761. Bibcode:2012JCrGr.359...83H. doi:10.1016/j.jcrysgro.2012.08.015. S2CID 94096447.
O'Sullivan, D.; Pomeroy, M.J.; Hampshire, S.; Murtagh, M.J. (2004). "Degradation resistance of silicon carbide diesel particulate filters to diesel fuel ash deposits". MRS Proceedings. 19 (10): 2913–2921. Bibcode:2004JMatR..19.2913O. doi:10.1557/JMR.2004.0373. S2CID 136537033.
Studt, P. (1987). "Influence of lubricating oil additives on friction of ceramics under conditions of boundary lubrication". Wear. 115 (1–2): 185–191. doi:10.1016/0043-1648(87)90208-0.
Chen, H.; Raghothamachar, Balaji; Vetter, William; Dudley, Michael; Wang, Y.; Skromme, B.J. (2006). "Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer". MRS Proceedings. 911: 169. doi:10.1557/PROC-0911-B12-03.
Madar, Roland (26 August 2004). "Materials science: Silicon carbide in contention". Nature. 430 (7003): 974–975. Bibcode:2004Natur.430..974M. doi:10.1038/430974a. PMID 15329702. S2CID 4328365.
Chen, Z.; Ahyi, A.C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J.R.; Feldman, L.C. (2010). "MOS Characteristics of C-Face 4H-SiC". Journal of Electronic Materials. 39 (5): 526–529. Bibcode:2010JEMat..39..526C. doi:10.1007/s11664-010-1096-5. S2CID 95074081.
Petrovsky, Gury Timofeevic; Tolstoy, Michael N.; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N. (June 1994). Stepp, Larry M. (ed.). "2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope". Proc. SPIE. Advanced Technology Optical Telescopes V. 2199: 263. Bibcode:1994SPIE.2199..263P. doi:10.1117/12.176195. S2CID 120854083.
Maun, Jignesh D.; Sunderland, P. B.; Urban, D. L. (2007). "Thin-filament pyrometry with a digital still camera" (PDF). Applied Optics. 46 (4): 483–8. Bibcode:2007ApOpt..46..483M. doi:10.1364/AO.46.000483. hdl:1903/3602. PMID 17230239.
López-Honorato, E.; Tan, J.; Meadows, P. J.; Marsh, G.; Xiao, P. (2009). "TRISO coated fuel particles with enhanced SiC properties". Journal of Nuclear Materials. 392 (2): 219–224. Bibcode:2009JNuM..392..219L. doi:10.1016/j.jnucmat.2009.03.013.
Bertolino, Meyer, G. (2002). "Degradation of the mechanical properties of Zircaloy-4 due to hydrogen embrittlement". Journal of Alloys and Compounds. 330–332: 408–413. doi:10.1016/S0925-8388(01)01576-6.
Singh, S. K.; Parida, K. M.; Mohanty, B. C.; Rao, S. B. (1995). "High surface area silicon carbide from rice husk: A support material for catalysts". Reaction Kinetics and Catalysis Letters. 54 (1): 29–34. doi:10.1007/BF02071177. S2CID 95550450.
Ruan, Ming; Hu, Yike; Guo, Zelei; Dong, Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A. de (December 2012). "Epitaxial graphene on silicon carbide: Introduction to structured graphene" (PDF). MRS Bulletin. 37 (12): 1138–1147. Bibcode:2012MRSBu..37.1138R. doi:10.1557/mrs.2012.231. ISSN 0883-7694. S2CID 40188237.
Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A. (2009-02-08). "Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide". Nature Materials. 8 (3): 203–207. Bibcode:2009NatMa...8..203E. doi:10.1038/nmat2382. hdl:11858/00-001M-0000-0010-FA05-E. ISSN 1476-1122. PMID 19202545.
de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna (July 2007). "Epitaxial graphene". Solid State Communications. 143 (1–2): 92–100. arXiv:0704.0285. Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. ISSN 0038-1098. S2CID 44542277.
Juang, Zhen-Yu; Wu, Chih-Yu; Lo, Chien-Wei; Chen, Wei-Yu; Huang, Chih-Fang; Hwang, Jenn-Chang; Chen, Fu-Rong; Leou, Keh-Chyang; Tsai, Chuen-Horng (2009-07-01). "Synthesis of graphene on silicon carbide substrates at low temperature". Carbon. 47 (8): 2026–2031. Bibcode:2009Carbo..47.2026J. doi:10.1016/j.carbon.2009.03.051. ISSN 0008-6223.
Castelletto, Stefania; Johnson, Brett; Iv{\'a}dy, Viktor; Stavrias, Nicholas; Umeda, T; Gali, Adam; Ohshima, Takeshi (2014). "A silicon carbide room-temperature single-photon source". Nature Materials. 13 (2): 151–156. Bibcode:2014NatMa..13..151C. doi:10.1038/nmat3806. PMID 24240243. S2CID 37160386.
Lohrmann, A.; Iwamoto, N.; Bodrog, Z.; Castalletto, S.; Ohshima, T.; Karle, T.J.; Gali, A.; Prawer, S.; McCallum, J.C.; Johnson, B.C. (2015). "Single-photon emitting diode in silicon carbide". Nature Communications. 6: 7783. arXiv:1503.07566. Bibcode:2015NatCo...6.7783L. doi:10.1038/ncomms8783. PMID 26205309. S2CID 205338373.
Khramtsov, I.A.; Vyshnevyy, A.A.; Fedyanin, D. Yu. (2018). "Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide". npj Quantum Information. 4: 15. Bibcode:2018npjQI...4...15K. doi:10.1038/s41534-018-0066-2.
Davidsson, J.; Ivády, V.; Armiento, R.; Son, N.T.; Gali, A.; Abrikosov, I. A. (2018). "First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC". New Journal of Physics. 20 (2): 023035. arXiv:1708.04508. Bibcode:2018NJPh...20b3035D. doi:10.1088/1367-2630/aaa752. S2CID 4867492.

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Maun, Jignesh D.; Sunderland, P. B.; Urban, D. L. (2007). "Thin-filament pyrometry with a digital still camera" (PDF). Applied Optics. 46 (4): 483–8. Bibcode:2007ApOpt..46..483M. doi:10.1364/AO.46.000483. hdl:1903/3602. PMID 17230239.
Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A. (2009-02-08). "Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide". Nature Materials. 8 (3): 203–207. Bibcode:2009NatMa...8..203E. doi:10.1038/nmat2382. hdl:11858/00-001M-0000-0010-FA05-E. ISSN 1476-1122. PMID 19202545.

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Di Pierro S.; Gnos E.; Grobety B.H.; Armbruster T.; Bernasconi S.M. & Ulmer P. (2003). "Rock-forming moissanite (natural α-silicon carbide)". American Mineralogist. 88 (11–12): 1817–21. Bibcode:2003AmMin..88.1817D. doi:10.2138/am-2003-11-1223. S2CID 128600868.
Pitcher, M. W.; Joray, S. J.; Bianconi, P. A. (2004). "Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne)". Advanced Materials. 16 (8): 706–709. Bibcode:2004AdM....16..706P. doi:10.1002/adma.200306467. S2CID 97161599.
Bunsell, A. R.; Piant, A. (2006). "A review of the development of three generations of small diameter silicon carbide fibres". Journal of Materials Science. 41 (3): 823–839. Bibcode:2006JMatS..41..823B. doi:10.1007/s10853-006-6566-z. S2CID 135586321.
Morkoç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. (1994). "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies". Journal of Applied Physics. 76 (3): 1363. Bibcode:1994JAP....76.1363M. doi:10.1063/1.358463.
Muranaka, T.; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun (2008). "Superconductivity in carrier-doped silicon carbide". Sci. Technol. Adv. Mater. 9 (4): 044204. Bibcode:2008STAdM...9d4204M. doi:10.1088/1468-6996/9/4/044204. PMC 5099635. PMID 27878021.
Neumeier, J.J.; Shvyd'ko, Y.V.; Haskel, Daniel (2024). "Thermal expansion of 4H and 6H SiC from 5 K to 340 K". Journal of Physics and Chemistry of Solids. 187 (1): 11860. Bibcode:2024JPCS..18711860N. doi:10.1016/j.jpcs.2023.111860. S2CID 267488637.
Bhatnagar, M.; Baliga, B.J. (March 1993). "Comparison of 6H-SiC, 3C-SiC, and Si for power devices". IEEE Transactions on Electron Devices. 40 (3): 645–655. Bibcode:1993ITED...40..645B. doi:10.1109/16.199372.
Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru (2008). "Superconductivity in heavily boron-doped silicon carbide". Science and Technology of Advanced Materials. 9 (4): 044205. arXiv:0810.0056. Bibcode:2008STAdM...9d4205K. doi:10.1088/1468-6996/9/4/044205. PMC 5099636. PMID 27878022.
Yanase, Y. & Yorozu, N. (2008). "Superconductivity in compensated and uncompensated semiconductors". Science and Technology of Advanced Materials. 9 (4): 044201. Bibcode:2008STAdM...9d4201Y. doi:10.1088/1468-6996/9/4/044201. PMC 5099632. PMID 27878018.
Hanaor, Dorian A.H.; Xu, Wanqiang; Ferry, Michael; Sorrell, Charles C. (2012). "Abnormal grain growth of rutile TiO2 induced by ZrSiO4". Journal of Crystal Growth. 359: 83–91. arXiv:1303.2761. Bibcode:2012JCrGr.359...83H. doi:10.1016/j.jcrysgro.2012.08.015. S2CID 94096447.
O'Sullivan, D.; Pomeroy, M.J.; Hampshire, S.; Murtagh, M.J. (2004). "Degradation resistance of silicon carbide diesel particulate filters to diesel fuel ash deposits". MRS Proceedings. 19 (10): 2913–2921. Bibcode:2004JMatR..19.2913O. doi:10.1557/JMR.2004.0373. S2CID 136537033.
Madar, Roland (26 August 2004). "Materials science: Silicon carbide in contention". Nature. 430 (7003): 974–975. Bibcode:2004Natur.430..974M. doi:10.1038/430974a. PMID 15329702. S2CID 4328365.
Chen, Z.; Ahyi, A.C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J.R.; Feldman, L.C. (2010). "MOS Characteristics of C-Face 4H-SiC". Journal of Electronic Materials. 39 (5): 526–529. Bibcode:2010JEMat..39..526C. doi:10.1007/s11664-010-1096-5. S2CID 95074081.
Petrovsky, Gury Timofeevic; Tolstoy, Michael N.; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N. (June 1994). Stepp, Larry M. (ed.). "2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope". Proc. SPIE. Advanced Technology Optical Telescopes V. 2199: 263. Bibcode:1994SPIE.2199..263P. doi:10.1117/12.176195. S2CID 120854083.
Maun, Jignesh D.; Sunderland, P. B.; Urban, D. L. (2007). "Thin-filament pyrometry with a digital still camera" (PDF). Applied Optics. 46 (4): 483–8. Bibcode:2007ApOpt..46..483M. doi:10.1364/AO.46.000483. hdl:1903/3602. PMID 17230239.
López-Honorato, E.; Tan, J.; Meadows, P. J.; Marsh, G.; Xiao, P. (2009). "TRISO coated fuel particles with enhanced SiC properties". Journal of Nuclear Materials. 392 (2): 219–224. Bibcode:2009JNuM..392..219L. doi:10.1016/j.jnucmat.2009.03.013.
Ruan, Ming; Hu, Yike; Guo, Zelei; Dong, Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A. de (December 2012). "Epitaxial graphene on silicon carbide: Introduction to structured graphene" (PDF). MRS Bulletin. 37 (12): 1138–1147. Bibcode:2012MRSBu..37.1138R. doi:10.1557/mrs.2012.231. ISSN 0883-7694. S2CID 40188237.
Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A. (2009-02-08). "Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide". Nature Materials. 8 (3): 203–207. Bibcode:2009NatMa...8..203E. doi:10.1038/nmat2382. hdl:11858/00-001M-0000-0010-FA05-E. ISSN 1476-1122. PMID 19202545.
de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna (July 2007). "Epitaxial graphene". Solid State Communications. 143 (1–2): 92–100. arXiv:0704.0285. Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. ISSN 0038-1098. S2CID 44542277.
Juang, Zhen-Yu; Wu, Chih-Yu; Lo, Chien-Wei; Chen, Wei-Yu; Huang, Chih-Fang; Hwang, Jenn-Chang; Chen, Fu-Rong; Leou, Keh-Chyang; Tsai, Chuen-Horng (2009-07-01). "Synthesis of graphene on silicon carbide substrates at low temperature". Carbon. 47 (8): 2026–2031. Bibcode:2009Carbo..47.2026J. doi:10.1016/j.carbon.2009.03.051. ISSN 0008-6223.
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