Silicon–germanium (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Silicon–germanium" in English language version.

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8doi.org

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4harvard.edu

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2aip.org

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1semanticscholar.org

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1physicsworld.com

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aip.org

Ouellette, Jennifer (June/July 2002). "Silicon–Germanium Gives Semiconductors the Edge". Archived 2008-05-17 at the Wayback Machine, The Industrial Physicist.

pubs.aip.org

Dismukes, J.P.; Ekstrom, E.; Beers, D.S.; Steigmeier, E.F.; Kudman, I. (1964). "Thermal and electrical properties of heavily doped Ge-Si alloys up to 1300 °K". Journal of Applied. 35 (10): 2899. doi:10.1063/1.1713126. ISSN 0021-8979.

alphabetenergy.com

"Thermoelectrics History Timeline". Alphabet Energy. Archived from the original on 2019-08-17.

amd.com

AMD And IBM Unveil New, Higher Performance, More Power Efficient 65nm Process Technologies At Gathering Of Industry's Top R&D Firms, retrieved at March 16, 2007.

aps.org

link.aps.org

Glicksman, Maurice (1955). "Magnetoresistance of Germanium-Silicon Alloys". Physical review. 100: 1146–1147. doi:10.1103/PhysRev.100.1146.

arxiv.org

Fadaly, Elham M. T.; Dijkstra, Alain; Suckert, Jens Renè; Ziss, Dorian; van Tilburg, Marvin A. J.; Mao, Chenyang; Ren, Yizhen; van Lange, Victor T.; Korzun, Ksenia; Kölling, Sebastian; Verheijen, Marcel A.; Busse, David; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Stangl, Julian; Finley, Jonathan J.; Botti, Silvana; Haverkort, Jos E. M.; Bakkers, Erik P. A. M. (April 2020). "Direct-bandgap emission from hexagonal Ge and SiGe alloys". Nature. 580 (7802): 205–209. arXiv:1911.00726. Bibcode:2020Natur.580..205F. doi:10.1038/s41586-020-2150-y. PMID 32269353. S2CID 207870211.

doi.org

Glicksman, Maurice (1955). "Magnetoresistance of Germanium-Silicon Alloys". Physical review. 100: 1146–1147. doi:10.1103/PhysRev.100.1146.
Kroemer, Herbert (1957). "Theory of a Wide-Gap Emitter for Transistors". Proceedings of the IRE. 45 (11): 1535–1537. doi:10.1109/JRPROC.1957.278348. ISSN 2162-6634.
Kasper, Erich; Herzog, H.J.; Kibbel, H. (1975). "A one-dimensional SiGe superlattice grown by UHV epitaxy". Applied Physics. 8 (3): 199–205. doi:10.1007/BF00896611. ISSN 1432-0630.
Meyerson, Bernard S. (March 1994). "High-Speed Silicon-Germanium Electronics". Scientific American. 270 (3): 62–67. Bibcode:1994SciAm.270c..62M. doi:10.1038/scientificamerican0394-62.
Woelk, Egbert; Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Amamchyan, Artashes; Power, Michael B.; Lamare, Bruno; Beaudoin, Grégoire; Sagnes, Isabelle (January 2006). "Designing novel organogermanium OMVPE precursors for high-purity germanium films". Journal of Crystal Growth. 287 (2): 684–687. Bibcode:2006JCrGr.287..684W. doi:10.1016/j.jcrysgro.2005.10.094.
Shenai, Deo V.; DiCarlo, Ronald L.; Power, Michael B.; Amamchyan, Artashes; Goyette, Randall J.; Woelk, Egbert (January 2007). "Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE". Journal of Crystal Growth. 298: 172–175. Bibcode:2007JCrGr.298..172S. doi:10.1016/j.jcrysgro.2006.10.194.
Dismukes, J.P.; Ekstrom, E.; Beers, D.S.; Steigmeier, E.F.; Kudman, I. (1964). "Thermal and electrical properties of heavily doped Ge-Si alloys up to 1300 °K". Journal of Applied. 35 (10): 2899. doi:10.1063/1.1713126. ISSN 0021-8979.
Fadaly, Elham M. T.; Dijkstra, Alain; Suckert, Jens Renè; Ziss, Dorian; van Tilburg, Marvin A. J.; Mao, Chenyang; Ren, Yizhen; van Lange, Victor T.; Korzun, Ksenia; Kölling, Sebastian; Verheijen, Marcel A.; Busse, David; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Stangl, Julian; Finley, Jonathan J.; Botti, Silvana; Haverkort, Jos E. M.; Bakkers, Erik P. A. M. (April 2020). "Direct-bandgap emission from hexagonal Ge and SiGe alloys". Nature. 580 (7802): 205–209. arXiv:1911.00726. Bibcode:2020Natur.580..205F. doi:10.1038/s41586-020-2150-y. PMID 32269353. S2CID 207870211.

fas.org

G. L. Bennett; J. J. Lombardo; R. J. Hemler; G. Silverman; C. W. Whitmore; W. R. Amos; E. W. Johnson; A. Schock; R. W. Zocher; T. K. Keenan; J. C. Hagan; R. W. Englehart (26–29 June 2006). Mission of Daring: The General-Purpose Heat Source Radioisotope Thermoelectric Generator (PDF). 4th International Energy Conversion Engineering Conference and Exhibit (IECEC). San Diego, California.

harvard.edu

ui.adsabs.harvard.edu

Meyerson, Bernard S. (March 1994). "High-Speed Silicon-Germanium Electronics". Scientific American. 270 (3): 62–67. Bibcode:1994SciAm.270c..62M. doi:10.1038/scientificamerican0394-62.
Woelk, Egbert; Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Amamchyan, Artashes; Power, Michael B.; Lamare, Bruno; Beaudoin, Grégoire; Sagnes, Isabelle (January 2006). "Designing novel organogermanium OMVPE precursors for high-purity germanium films". Journal of Crystal Growth. 287 (2): 684–687. Bibcode:2006JCrGr.287..684W. doi:10.1016/j.jcrysgro.2005.10.094.
Shenai, Deo V.; DiCarlo, Ronald L.; Power, Michael B.; Amamchyan, Artashes; Goyette, Randall J.; Woelk, Egbert (January 2007). "Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE". Journal of Crystal Growth. 298: 172–175. Bibcode:2007JCrGr.298..172S. doi:10.1016/j.jcrysgro.2006.10.194.
Fadaly, Elham M. T.; Dijkstra, Alain; Suckert, Jens Renè; Ziss, Dorian; van Tilburg, Marvin A. J.; Mao, Chenyang; Ren, Yizhen; van Lange, Victor T.; Korzun, Ksenia; Kölling, Sebastian; Verheijen, Marcel A.; Busse, David; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Stangl, Julian; Finley, Jonathan J.; Botti, Silvana; Haverkort, Jos E. M.; Bakkers, Erik P. A. M. (April 2020). "Direct-bandgap emission from hexagonal Ge and SiGe alloys". Nature. 580 (7802): 205–209. arXiv:1911.00726. Bibcode:2020Natur.580..205F. doi:10.1038/s41586-020-2150-y. PMID 32269353. S2CID 207870211.

ieee.org

ieeexplore.ieee.org

Cressler, J. D.; Niu, G. (2003). Silicon-Germanium Heterojunction Bipolar Transistors. Artech House. p. 13.

nih.gov

pubmed.ncbi.nlm.nih.gov

Fadaly, Elham M. T.; Dijkstra, Alain; Suckert, Jens Renè; Ziss, Dorian; van Tilburg, Marvin A. J.; Mao, Chenyang; Ren, Yizhen; van Lange, Victor T.; Korzun, Ksenia; Kölling, Sebastian; Verheijen, Marcel A.; Busse, David; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Stangl, Julian; Finley, Jonathan J.; Botti, Silvana; Haverkort, Jos E. M.; Bakkers, Erik P. A. M. (April 2020). "Direct-bandgap emission from hexagonal Ge and SiGe alloys". Nature. 580 (7802): 205–209. arXiv:1911.00726. Bibcode:2020Natur.580..205F. doi:10.1038/s41586-020-2150-y. PMID 32269353. S2CID 207870211.

nytimes.com

Markoff, John (9 July 2015). "IBM Discloses Working Version of a Much Higher-Capacity Chip". The New York Times.

physicsworld.com

Hamish Johnston (10 Dec 2020). "Physics World announces its Breakthrough of the Year finalists for 2020". Physics World.

semanticscholar.org

api.semanticscholar.org

Fadaly, Elham M. T.; Dijkstra, Alain; Suckert, Jens Renè; Ziss, Dorian; van Tilburg, Marvin A. J.; Mao, Chenyang; Ren, Yizhen; van Lange, Victor T.; Korzun, Ksenia; Kölling, Sebastian; Verheijen, Marcel A.; Busse, David; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Stangl, Julian; Finley, Jonathan J.; Botti, Silvana; Haverkort, Jos E. M.; Bakkers, Erik P. A. M. (April 2020). "Direct-bandgap emission from hexagonal Ge and SiGe alloys". Nature. 580 (7802): 205–209. arXiv:1911.00726. Bibcode:2020Natur.580..205F. doi:10.1038/s41586-020-2150-y. PMID 32269353. S2CID 207870211.

web.archive.org

Ouellette, Jennifer (June/July 2002). "Silicon–Germanium Gives Semiconductors the Edge". Archived 2008-05-17 at the Wayback Machine, The Industrial Physicist.
"Thermoelectrics History Timeline". Alphabet Energy. Archived from the original on 2019-08-17.

worldcat.org

search.worldcat.org

Kroemer, Herbert (1957). "Theory of a Wide-Gap Emitter for Transistors". Proceedings of the IRE. 45 (11): 1535–1537. doi:10.1109/JRPROC.1957.278348. ISSN 2162-6634.
Kasper, Erich; Herzog, H.J.; Kibbel, H. (1975). "A one-dimensional SiGe superlattice grown by UHV epitaxy". Applied Physics. 8 (3): 199–205. doi:10.1007/BF00896611. ISSN 1432-0630.
Dismukes, J.P.; Ekstrom, E.; Beers, D.S.; Steigmeier, E.F.; Kudman, I. (1964). "Thermal and electrical properties of heavily doped Ge-Si alloys up to 1300 °K". Journal of Applied. 35 (10): 2899. doi:10.1063/1.1713126. ISSN 0021-8979.