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Single-electron transistor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Single-electron transistor" in English language version.

refsWebsite
Global rank English rank
11doi.org
2nd place
2nd place
9harvard.edu
18th place
17th place
5worldcat.org
5th place
5th place
5semanticscholar.org
11th place
8th place
1physicsworld.com
6,140th place
4,691st place
1tuwien.ac.at
low place
low place
1ions4set.eu
low place
low place
1arxiv.org
69th place
59th place

arxiv.org

  • Xu, Xiaomo; Heinig, Karl-Heinz; Möller, Wolfhard; Engelmann, Hans-Jürgen; Klingner, Nico; Gharbi, Ahmed; Tiron, Raluca; Johannes von Borany; Hlawacek, Gregor (2019). "Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: Plastic deformation and controlled thinning to 10 nm". arXiv:1906.09975v2 [physics.app-ph].

doi.org

  • Mahapatra, S.; Vaish, V.; Wasshuber, C.; Banerjee, K.; Ionescu, A.M. (2004). "Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design". IEEE Transactions on Electron Devices. 51 (11): 1772–1782. Bibcode:2004ITED...51.1772M. doi:10.1109/TED.2004.837369. ISSN 0018-9383. S2CID 15373278.
  • Thouless, David J. (1977). "Maximum Metallic Resistance in Thin Wires". Phys. Rev. Lett. 39 (18): 1167–1169. Bibcode:1977PhRvL..39.1167T. doi:10.1103/PhysRevLett.39.1167.
  • Al'Tshuler, Boris L.; Lee, Patrick A. (1988). "Disordered electronic systems". Physics Today. 41 (12): 36–44. Bibcode:1988PhT....41l..36A. doi:10.1063/1.881139.
  • Averin, D. V.; Likharev, K. K. (1986-02-01). "Coulomb blockade of single-electron tunnelling, and coherent oscillations in small tunnel junctions". Journal of Low Temperature Physics. 62 (3–4): 345–373. Bibcode:1986JLTP...62..345A. doi:10.1007/BF00683469. ISSN 0022-2291. S2CID 120841063.
  • Kastner, M. A. (1992-07-01). "The single-electron transistor". Rev. Mod. Phys. 64 (3): 849–858. Bibcode:1992RvMP...64..849K. doi:10.1103/RevModPhys.64.849.
  • Gubin, S. P.; Gulayev, Yu V.; Khomutov, G. B.; Kislov, V. V.; Kolesov, V. V.; Soldatov, E. S.; Sulaimankulov, K. S.; Trifonov, A. S. (2002). "Molecular clusters as building blocks for nanoelectronics: the first demonstration of a cluster single-electron tunnelling transistor at room temperature". Nanotechnology. 13 (2): 185–194. Bibcode:2002Nanot..13..185G. doi:10.1088/0957-4484/13/2/311..
  • Kumar, O.; Kaur, M. (2010). "Single Electron Transistor: Applications & Problems". International Journal of VLSI Design & Communication Systems. 1 (4): 24–29. doi:10.5121/vlsic.2010.1403.
  • Uchida, Ken; Matsuzawa, Kazuya; Koga, Junji; Ohba, Ryuji; Takagi, Shin-ichi; Toriumi, Akira (2000). "Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits". Japanese Journal of Applied Physics. 39 (Part 1, No. 4B): 2321–2324. Bibcode:2000JaJAP..39.2321U. doi:10.1143/JJAP.39.2321. ISSN 0021-4922.
  • Ionescu, A.M.; Mahapatra, S.; Pott, V. (2004). "Hybrid SETMOS Architecture With Coulomb Blockade Oscillations and High Current Drive". IEEE Electron Device Letters. 25 (6): 411–413. Bibcode:2004IEDL...25..411I. doi:10.1109/LED.2004.828558. ISSN 0741-3106. S2CID 42715316.
  • Amat, Esteve; Bausells, Joan; Perez-Murano, Francesc (2017). "Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits". IEEE Transactions on Electron Devices. 64 (12): 5172–5180. Bibcode:2017ITED...64.5172A. doi:10.1109/TED.2017.2765003. ISSN 0018-9383. S2CID 22082690.
  • Klupfel, F. J.; Burenkov, A.; Lorenz, J. (2016). "Simulation of silicon-dot-based single-electron memory devices". 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). pp. 237–240. doi:10.1109/SISPAD.2016.7605191. ISBN 978-1-5090-0818-6. S2CID 15721282.

harvard.edu

ui.adsabs.harvard.edu

  • Mahapatra, S.; Vaish, V.; Wasshuber, C.; Banerjee, K.; Ionescu, A.M. (2004). "Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design". IEEE Transactions on Electron Devices. 51 (11): 1772–1782. Bibcode:2004ITED...51.1772M. doi:10.1109/TED.2004.837369. ISSN 0018-9383. S2CID 15373278.
  • Thouless, David J. (1977). "Maximum Metallic Resistance in Thin Wires". Phys. Rev. Lett. 39 (18): 1167–1169. Bibcode:1977PhRvL..39.1167T. doi:10.1103/PhysRevLett.39.1167.
  • Al'Tshuler, Boris L.; Lee, Patrick A. (1988). "Disordered electronic systems". Physics Today. 41 (12): 36–44. Bibcode:1988PhT....41l..36A. doi:10.1063/1.881139.
  • Averin, D. V.; Likharev, K. K. (1986-02-01). "Coulomb blockade of single-electron tunnelling, and coherent oscillations in small tunnel junctions". Journal of Low Temperature Physics. 62 (3–4): 345–373. Bibcode:1986JLTP...62..345A. doi:10.1007/BF00683469. ISSN 0022-2291. S2CID 120841063.
  • Kastner, M. A. (1992-07-01). "The single-electron transistor". Rev. Mod. Phys. 64 (3): 849–858. Bibcode:1992RvMP...64..849K. doi:10.1103/RevModPhys.64.849.
  • Gubin, S. P.; Gulayev, Yu V.; Khomutov, G. B.; Kislov, V. V.; Kolesov, V. V.; Soldatov, E. S.; Sulaimankulov, K. S.; Trifonov, A. S. (2002). "Molecular clusters as building blocks for nanoelectronics: the first demonstration of a cluster single-electron tunnelling transistor at room temperature". Nanotechnology. 13 (2): 185–194. Bibcode:2002Nanot..13..185G. doi:10.1088/0957-4484/13/2/311..
  • Uchida, Ken; Matsuzawa, Kazuya; Koga, Junji; Ohba, Ryuji; Takagi, Shin-ichi; Toriumi, Akira (2000). "Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits". Japanese Journal of Applied Physics. 39 (Part 1, No. 4B): 2321–2324. Bibcode:2000JaJAP..39.2321U. doi:10.1143/JJAP.39.2321. ISSN 0021-4922.
  • Ionescu, A.M.; Mahapatra, S.; Pott, V. (2004). "Hybrid SETMOS Architecture With Coulomb Blockade Oscillations and High Current Drive". IEEE Electron Device Letters. 25 (6): 411–413. Bibcode:2004IEDL...25..411I. doi:10.1109/LED.2004.828558. ISSN 0741-3106. S2CID 42715316.
  • Amat, Esteve; Bausells, Joan; Perez-Murano, Francesc (2017). "Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits". IEEE Transactions on Electron Devices. 64 (12): 5172–5180. Bibcode:2017ITED...64.5172A. doi:10.1109/TED.2017.2765003. ISSN 0018-9383. S2CID 22082690.

ions4set.eu

physicsworld.com

semanticscholar.org

api.semanticscholar.org

  • Mahapatra, S.; Vaish, V.; Wasshuber, C.; Banerjee, K.; Ionescu, A.M. (2004). "Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design". IEEE Transactions on Electron Devices. 51 (11): 1772–1782. Bibcode:2004ITED...51.1772M. doi:10.1109/TED.2004.837369. ISSN 0018-9383. S2CID 15373278.
  • Averin, D. V.; Likharev, K. K. (1986-02-01). "Coulomb blockade of single-electron tunnelling, and coherent oscillations in small tunnel junctions". Journal of Low Temperature Physics. 62 (3–4): 345–373. Bibcode:1986JLTP...62..345A. doi:10.1007/BF00683469. ISSN 0022-2291. S2CID 120841063.
  • Ionescu, A.M.; Mahapatra, S.; Pott, V. (2004). "Hybrid SETMOS Architecture With Coulomb Blockade Oscillations and High Current Drive". IEEE Electron Device Letters. 25 (6): 411–413. Bibcode:2004IEDL...25..411I. doi:10.1109/LED.2004.828558. ISSN 0741-3106. S2CID 42715316.
  • Amat, Esteve; Bausells, Joan; Perez-Murano, Francesc (2017). "Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits". IEEE Transactions on Electron Devices. 64 (12): 5172–5180. Bibcode:2017ITED...64.5172A. doi:10.1109/TED.2017.2765003. ISSN 0018-9383. S2CID 22082690.
  • Klupfel, F. J.; Burenkov, A.; Lorenz, J. (2016). "Simulation of silicon-dot-based single-electron memory devices". 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). pp. 237–240. doi:10.1109/SISPAD.2016.7605191. ISBN 978-1-5090-0818-6. S2CID 15721282.

tuwien.ac.at

iue.tuwien.ac.at

worldcat.org

search.worldcat.org

  • Mahapatra, S.; Vaish, V.; Wasshuber, C.; Banerjee, K.; Ionescu, A.M. (2004). "Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design". IEEE Transactions on Electron Devices. 51 (11): 1772–1782. Bibcode:2004ITED...51.1772M. doi:10.1109/TED.2004.837369. ISSN 0018-9383. S2CID 15373278.
  • Averin, D. V.; Likharev, K. K. (1986-02-01). "Coulomb blockade of single-electron tunnelling, and coherent oscillations in small tunnel junctions". Journal of Low Temperature Physics. 62 (3–4): 345–373. Bibcode:1986JLTP...62..345A. doi:10.1007/BF00683469. ISSN 0022-2291. S2CID 120841063.
  • Uchida, Ken; Matsuzawa, Kazuya; Koga, Junji; Ohba, Ryuji; Takagi, Shin-ichi; Toriumi, Akira (2000). "Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits". Japanese Journal of Applied Physics. 39 (Part 1, No. 4B): 2321–2324. Bibcode:2000JaJAP..39.2321U. doi:10.1143/JJAP.39.2321. ISSN 0021-4922.
  • Ionescu, A.M.; Mahapatra, S.; Pott, V. (2004). "Hybrid SETMOS Architecture With Coulomb Blockade Oscillations and High Current Drive". IEEE Electron Device Letters. 25 (6): 411–413. Bibcode:2004IEDL...25..411I. doi:10.1109/LED.2004.828558. ISSN 0741-3106. S2CID 42715316.
  • Amat, Esteve; Bausells, Joan; Perez-Murano, Francesc (2017). "Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits". IEEE Transactions on Electron Devices. 64 (12): 5172–5180. Bibcode:2017ITED...64.5172A. doi:10.1109/TED.2017.2765003. ISSN 0018-9383. S2CID 22082690.