Threshold displacement energy (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Threshold displacement energy" in English language version.

refsWebsite

Global rank English rank

16doi.org

2^nd place

16worldcat.org

5^th place

14harvard.edu

18^th place

17^th place

3semanticscholar.org

11^th place

8^th place

1osti.gov

2,036^th place

1,254^th place

1unt.edu

1,336^th place

769^th place

1ucl.ac.uk

1,306^th place

885^th place

1srim.org

low place

doi.org

Andersen, H. H. (1979). "The depth resolution of sputter profiling". Applied Physics. 18 (2). Springer Science and Business Media LLC: 131–140. Bibcode:1979ApPhy..18..131A. doi:10.1007/bf00934407. ISSN 0340-3793. S2CID 54858884.
Malerba, L.; Perlado, J. M. (2 January 2002). "Basic mechanisms of atomic displacement production in cubic silicon carbide: A molecular dynamics study". Physical Review B. 65 (4). American Physical Society (APS): 045202. Bibcode:2002PhRvB..65d5202M. doi:10.1103/physrevb.65.045202. ISSN 0163-1829.
Nordlund, K.; Wallenius, J.; Malerba, L. (2006). "Molecular dynamics simulations of threshold displacement energies in Fe". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 246 (2). Elsevier BV: 322–332. Bibcode:2006NIMPB.246..322N. doi:10.1016/j.nimb.2006.01.003. ISSN 0168-583X.
Gibson, J. B.; Goland, A. N.; Milgram, M.; Vineyard, G. H. (15 November 1960). "Dynamics of Radiation Damage". Physical Review. 120 (4). American Physical Society (APS): 1229–1253. Bibcode:1960PhRv..120.1229G. doi:10.1103/physrev.120.1229. ISSN 0031-899X.
Erginsoy, C.; Vineyard, G. H.; Englert, A. (20 January 1964). "Dynamics of Radiation Damage in a Body-Centered Cubic Lattice". Physical Review. 133 (2A). American Physical Society (APS): A595–A606. Bibcode:1964PhRv..133..595E. doi:10.1103/physrev.133.a595. ISSN 0031-899X.
Caturla, M.-J.; De La Rubia, T. Diaz; Gilmer, G.H. (1993). "Point defect Production, Geometry and Stability in Silicon: a Molecular Dynamics Simulation Study". MRS Proceedings. 316. Cambridge University Press (CUP): 141. doi:10.1557/proc-316-141. ISSN 1946-4274.
Park, Byeongwon; Weber, William J.; Corrales, L. René (16 October 2001). "Molecular-dynamics simulation study of threshold displacements and defect formation in zircon". Physical Review B. 64 (17). American Physical Society (APS): 174108. Bibcode:2001PhRvB..64q4108P. doi:10.1103/physrevb.64.174108. ISSN 0163-1829.
Uhlmann, S.; Frauenheim, Th.; Boyd, K. J.; Marton, D.; Rabalais, J. W. (1997). "Elementary processes during low-energy self-bombardment of Si(100) 2 × 2 a molecular dynamics study". Radiation Effects and Defects in Solids. 141 (1–4). Informa UK Limited: 185–198. Bibcode:1997REDS..141..185U. doi:10.1080/10420159708211569. ISSN 1042-0150.
Windl, Wolfgang; Lenosky, Thomas J; Kress, Joel D; Voter, Arthur F (1998). "First-principles investigation of radiation induced defects in Si and SiC". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 141 (1–4). Elsevier BV: 61–65. Bibcode:1998NIMPB.141...61W. doi:10.1016/s0168-583x(98)00082-2. ISSN 0168-583X.
Mazzarolo, Massimiliano; Colombo, Luciano; Lulli, Giorgio; Albertazzi, Eros (26 April 2001). "Low-energy recoils in crystalline silicon: Quantum simulations". Physical Review B. 63 (19). American Physical Society (APS): 195207. Bibcode:2001PhRvB..63s5207M. doi:10.1103/physrevb.63.195207. ISSN 0163-1829.
Holmström, E.; Kuronen, A.; Nordlund, K. (9 July 2008). "Threshold defect production in silicon determined by density functional theory molecular dynamics simulations" (PDF). Physical Review B. 78 (4). American Physical Society (APS): 045202. Bibcode:2008PhRvB..78d5202H. doi:10.1103/physrevb.78.045202. ISSN 1098-0121.
Loferski, J. J.; Rappaport, P. (15 July 1958). "Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage Thresholds". Physical Review. 111 (2). American Physical Society (APS): 432–439. Bibcode:1958PhRv..111..432L. doi:10.1103/physrev.111.432. ISSN 0031-899X.
Banhart, Florian (30 July 1999). "Irradiation effects in carbon nanostructures". Reports on Progress in Physics. 62 (8). IOP Publishing: 1181–1221. Bibcode:1999RPPh...62.1181B. doi:10.1088/0034-4885/62/8/201. ISSN 0034-4885. S2CID 250834423.
Partyka, P.; Zhong, Y.; Nordlund, K.; Averback, R. S.; Robinson, I. M.; Ehrhart, P. (27 November 2001). "Grazing incidence diffuse x-ray scattering investigation of the properties of irradiation-induced point defects in silicon". Physical Review B. 64 (23). American Physical Society (APS): 235207. Bibcode:2001PhRvB..64w5207P. doi:10.1103/physrevb.64.235207. ISSN 0163-1829. S2CID 16857480.
Norgett, M.J.; Robinson, M.T.; Torrens, I.M. (1975). "A proposed method of calculating displacement dose rates". Nuclear Engineering and Design. 33 (1). Elsevier BV: 50–54. doi:10.1016/0029-5493(75)90035-7. ISSN 0029-5493.
Sillanpää, J.; Nordlund, K.; Keinonen, J. (1 July 2000). "Electronic stopping of Si from a three-dimensional charge distribution". Physical Review B. 62 (5). American Physical Society (APS): 3109–3116. Bibcode:2000PhRvB..62.3109S. doi:10.1103/physrevb.62.3109. ISSN 0163-1829.

harvard.edu

ui.adsabs.harvard.edu

Andersen, H. H. (1979). "The depth resolution of sputter profiling". Applied Physics. 18 (2). Springer Science and Business Media LLC: 131–140. Bibcode:1979ApPhy..18..131A. doi:10.1007/bf00934407. ISSN 0340-3793. S2CID 54858884.
Malerba, L.; Perlado, J. M. (2 January 2002). "Basic mechanisms of atomic displacement production in cubic silicon carbide: A molecular dynamics study". Physical Review B. 65 (4). American Physical Society (APS): 045202. Bibcode:2002PhRvB..65d5202M. doi:10.1103/physrevb.65.045202. ISSN 0163-1829.
Nordlund, K.; Wallenius, J.; Malerba, L. (2006). "Molecular dynamics simulations of threshold displacement energies in Fe". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 246 (2). Elsevier BV: 322–332. Bibcode:2006NIMPB.246..322N. doi:10.1016/j.nimb.2006.01.003. ISSN 0168-583X.
Gibson, J. B.; Goland, A. N.; Milgram, M.; Vineyard, G. H. (15 November 1960). "Dynamics of Radiation Damage". Physical Review. 120 (4). American Physical Society (APS): 1229–1253. Bibcode:1960PhRv..120.1229G. doi:10.1103/physrev.120.1229. ISSN 0031-899X.
Erginsoy, C.; Vineyard, G. H.; Englert, A. (20 January 1964). "Dynamics of Radiation Damage in a Body-Centered Cubic Lattice". Physical Review. 133 (2A). American Physical Society (APS): A595–A606. Bibcode:1964PhRv..133..595E. doi:10.1103/physrev.133.a595. ISSN 0031-899X.
Park, Byeongwon; Weber, William J.; Corrales, L. René (16 October 2001). "Molecular-dynamics simulation study of threshold displacements and defect formation in zircon". Physical Review B. 64 (17). American Physical Society (APS): 174108. Bibcode:2001PhRvB..64q4108P. doi:10.1103/physrevb.64.174108. ISSN 0163-1829.
Uhlmann, S.; Frauenheim, Th.; Boyd, K. J.; Marton, D.; Rabalais, J. W. (1997). "Elementary processes during low-energy self-bombardment of Si(100) 2 × 2 a molecular dynamics study". Radiation Effects and Defects in Solids. 141 (1–4). Informa UK Limited: 185–198. Bibcode:1997REDS..141..185U. doi:10.1080/10420159708211569. ISSN 1042-0150.
Windl, Wolfgang; Lenosky, Thomas J; Kress, Joel D; Voter, Arthur F (1998). "First-principles investigation of radiation induced defects in Si and SiC". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 141 (1–4). Elsevier BV: 61–65. Bibcode:1998NIMPB.141...61W. doi:10.1016/s0168-583x(98)00082-2. ISSN 0168-583X.
Mazzarolo, Massimiliano; Colombo, Luciano; Lulli, Giorgio; Albertazzi, Eros (26 April 2001). "Low-energy recoils in crystalline silicon: Quantum simulations". Physical Review B. 63 (19). American Physical Society (APS): 195207. Bibcode:2001PhRvB..63s5207M. doi:10.1103/physrevb.63.195207. ISSN 0163-1829.
Holmström, E.; Kuronen, A.; Nordlund, K. (9 July 2008). "Threshold defect production in silicon determined by density functional theory molecular dynamics simulations" (PDF). Physical Review B. 78 (4). American Physical Society (APS): 045202. Bibcode:2008PhRvB..78d5202H. doi:10.1103/physrevb.78.045202. ISSN 1098-0121.
Loferski, J. J.; Rappaport, P. (15 July 1958). "Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage Thresholds". Physical Review. 111 (2). American Physical Society (APS): 432–439. Bibcode:1958PhRv..111..432L. doi:10.1103/physrev.111.432. ISSN 0031-899X.
Banhart, Florian (30 July 1999). "Irradiation effects in carbon nanostructures". Reports on Progress in Physics. 62 (8). IOP Publishing: 1181–1221. Bibcode:1999RPPh...62.1181B. doi:10.1088/0034-4885/62/8/201. ISSN 0034-4885. S2CID 250834423.
Partyka, P.; Zhong, Y.; Nordlund, K.; Averback, R. S.; Robinson, I. M.; Ehrhart, P. (27 November 2001). "Grazing incidence diffuse x-ray scattering investigation of the properties of irradiation-induced point defects in silicon". Physical Review B. 64 (23). American Physical Society (APS): 235207. Bibcode:2001PhRvB..64w5207P. doi:10.1103/physrevb.64.235207. ISSN 0163-1829. S2CID 16857480.
Sillanpää, J.; Nordlund, K.; Keinonen, J. (1 July 2000). "Electronic stopping of Si from a three-dimensional charge distribution". Physical Review B. 62 (5). American Physical Society (APS): 3109–3116. Bibcode:2000PhRvB..62.3109S. doi:10.1103/physrevb.62.3109. ISSN 0163-1829.

osti.gov

Erginsoy, C.; Vineyard, G. H.; Englert, A. (20 January 1964). "Dynamics of Radiation Damage in a Body-Centered Cubic Lattice". Physical Review. 133 (2A). American Physical Society (APS): A595–A606. Bibcode:1964PhRv..133..595E. doi:10.1103/physrev.133.a595. ISSN 0031-899X.

semanticscholar.org

api.semanticscholar.org

Andersen, H. H. (1979). "The depth resolution of sputter profiling". Applied Physics. 18 (2). Springer Science and Business Media LLC: 131–140. Bibcode:1979ApPhy..18..131A. doi:10.1007/bf00934407. ISSN 0340-3793. S2CID 54858884.
Banhart, Florian (30 July 1999). "Irradiation effects in carbon nanostructures". Reports on Progress in Physics. 62 (8). IOP Publishing: 1181–1221. Bibcode:1999RPPh...62.1181B. doi:10.1088/0034-4885/62/8/201. ISSN 0034-4885. S2CID 250834423.
Partyka, P.; Zhong, Y.; Nordlund, K.; Averback, R. S.; Robinson, I. M.; Ehrhart, P. (27 November 2001). "Grazing incidence diffuse x-ray scattering investigation of the properties of irradiation-induced point defects in silicon". Physical Review B. 64 (23). American Physical Society (APS): 235207. Bibcode:2001PhRvB..64w5207P. doi:10.1103/physrevb.64.235207. ISSN 0163-1829. S2CID 16857480.

srim.org

"James Ziegler - SRIM & TRIM". www.srim.org.

ucl.ac.uk

discovery.ucl.ac.uk

Holmström, E.; Kuronen, A.; Nordlund, K. (9 July 2008). "Threshold defect production in silicon determined by density functional theory molecular dynamics simulations" (PDF). Physical Review B. 78 (4). American Physical Society (APS): 045202. Bibcode:2008PhRvB..78d5202H. doi:10.1103/physrevb.78.045202. ISSN 1098-0121.

unt.edu

digital.library.unt.edu

Caturla, M.-J.; De La Rubia, T. Diaz; Gilmer, G.H. (1993). "Point defect Production, Geometry and Stability in Silicon: a Molecular Dynamics Simulation Study". MRS Proceedings. 316. Cambridge University Press (CUP): 141. doi:10.1557/proc-316-141. ISSN 1946-4274.

worldcat.org

Andersen, H. H. (1979). "The depth resolution of sputter profiling". Applied Physics. 18 (2). Springer Science and Business Media LLC: 131–140. Bibcode:1979ApPhy..18..131A. doi:10.1007/bf00934407. ISSN 0340-3793. S2CID 54858884.
Malerba, L.; Perlado, J. M. (2 January 2002). "Basic mechanisms of atomic displacement production in cubic silicon carbide: A molecular dynamics study". Physical Review B. 65 (4). American Physical Society (APS): 045202. Bibcode:2002PhRvB..65d5202M. doi:10.1103/physrevb.65.045202. ISSN 0163-1829.
Nordlund, K.; Wallenius, J.; Malerba, L. (2006). "Molecular dynamics simulations of threshold displacement energies in Fe". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 246 (2). Elsevier BV: 322–332. Bibcode:2006NIMPB.246..322N. doi:10.1016/j.nimb.2006.01.003. ISSN 0168-583X.
Gibson, J. B.; Goland, A. N.; Milgram, M.; Vineyard, G. H. (15 November 1960). "Dynamics of Radiation Damage". Physical Review. 120 (4). American Physical Society (APS): 1229–1253. Bibcode:1960PhRv..120.1229G. doi:10.1103/physrev.120.1229. ISSN 0031-899X.
Erginsoy, C.; Vineyard, G. H.; Englert, A. (20 January 1964). "Dynamics of Radiation Damage in a Body-Centered Cubic Lattice". Physical Review. 133 (2A). American Physical Society (APS): A595–A606. Bibcode:1964PhRv..133..595E. doi:10.1103/physrev.133.a595. ISSN 0031-899X.
Caturla, M.-J.; De La Rubia, T. Diaz; Gilmer, G.H. (1993). "Point defect Production, Geometry and Stability in Silicon: a Molecular Dynamics Simulation Study". MRS Proceedings. 316. Cambridge University Press (CUP): 141. doi:10.1557/proc-316-141. ISSN 1946-4274.
Park, Byeongwon; Weber, William J.; Corrales, L. René (16 October 2001). "Molecular-dynamics simulation study of threshold displacements and defect formation in zircon". Physical Review B. 64 (17). American Physical Society (APS): 174108. Bibcode:2001PhRvB..64q4108P. doi:10.1103/physrevb.64.174108. ISSN 0163-1829.
Uhlmann, S.; Frauenheim, Th.; Boyd, K. J.; Marton, D.; Rabalais, J. W. (1997). "Elementary processes during low-energy self-bombardment of Si(100) 2 × 2 a molecular dynamics study". Radiation Effects and Defects in Solids. 141 (1–4). Informa UK Limited: 185–198. Bibcode:1997REDS..141..185U. doi:10.1080/10420159708211569. ISSN 1042-0150.
Windl, Wolfgang; Lenosky, Thomas J; Kress, Joel D; Voter, Arthur F (1998). "First-principles investigation of radiation induced defects in Si and SiC". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 141 (1–4). Elsevier BV: 61–65. Bibcode:1998NIMPB.141...61W. doi:10.1016/s0168-583x(98)00082-2. ISSN 0168-583X.
Mazzarolo, Massimiliano; Colombo, Luciano; Lulli, Giorgio; Albertazzi, Eros (26 April 2001). "Low-energy recoils in crystalline silicon: Quantum simulations". Physical Review B. 63 (19). American Physical Society (APS): 195207. Bibcode:2001PhRvB..63s5207M. doi:10.1103/physrevb.63.195207. ISSN 0163-1829.
Holmström, E.; Kuronen, A.; Nordlund, K. (9 July 2008). "Threshold defect production in silicon determined by density functional theory molecular dynamics simulations" (PDF). Physical Review B. 78 (4). American Physical Society (APS): 045202. Bibcode:2008PhRvB..78d5202H. doi:10.1103/physrevb.78.045202. ISSN 1098-0121.
Loferski, J. J.; Rappaport, P. (15 July 1958). "Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage Thresholds". Physical Review. 111 (2). American Physical Society (APS): 432–439. Bibcode:1958PhRv..111..432L. doi:10.1103/physrev.111.432. ISSN 0031-899X.
Banhart, Florian (30 July 1999). "Irradiation effects in carbon nanostructures". Reports on Progress in Physics. 62 (8). IOP Publishing: 1181–1221. Bibcode:1999RPPh...62.1181B. doi:10.1088/0034-4885/62/8/201. ISSN 0034-4885. S2CID 250834423.
Partyka, P.; Zhong, Y.; Nordlund, K.; Averback, R. S.; Robinson, I. M.; Ehrhart, P. (27 November 2001). "Grazing incidence diffuse x-ray scattering investigation of the properties of irradiation-induced point defects in silicon". Physical Review B. 64 (23). American Physical Society (APS): 235207. Bibcode:2001PhRvB..64w5207P. doi:10.1103/physrevb.64.235207. ISSN 0163-1829. S2CID 16857480.
Norgett, M.J.; Robinson, M.T.; Torrens, I.M. (1975). "A proposed method of calculating displacement dose rates". Nuclear Engineering and Design. 33 (1). Elsevier BV: 50–54. doi:10.1016/0029-5493(75)90035-7. ISSN 0029-5493.
Sillanpää, J.; Nordlund, K.; Keinonen, J. (1 July 2000). "Electronic stopping of Si from a three-dimensional charge distribution". Physical Review B. 62 (5). American Physical Society (APS): 3109–3116. Bibcode:2000PhRvB..62.3109S. doi:10.1103/physrevb.62.3109. ISSN 0163-1829.