Transfer length method (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Transfer length method" in English language version.

refsWebsite

Global rank English rank

5doi.org

2^nd place

1stanford.edu

179^th place

183^rd place

1researchgate.net

120^th place

125^th place

1uni-konstanz.de

low place

8,610^th place

1harvard.edu

18^th place

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1worldcat.org

5^th place

doi.org (Global: 2^nd place; English: 2^nd place)

Berger HH (June 1971). "Models for contacts to planar devices". Solid State Electronics. 15 (2): 145–158. doi:10.1016/0038-1101(72)90048-2.
Porter L, Davis RF (May 1995). "A critical review of ohmic and rectifying contacts for silicon carbide" (PDF). Materials Science and Engineering: B. 34 (2–3): 83–105. doi:10.1016/0921-5107(95)01276-1.
Braun S, Emre E, Raabe B, Hahn G (September 2010). Electroless nickel and copper metallization : Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers (PDF). 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain. pp. 1892–1895. doi:10.4229/25thEUPVSEC2010-2CV.2.51.
Marlow GS, Murkund BD (1982). "The Effects of Contact Size and non-zero Metal Resistance on the Determination of specific contact resistance". Solid State Electronics. 25 (2): 91–84. Bibcode:1982SSEle..25...91M. doi:10.1016/0038-1101(82)90036-3.
Reeves GK (1979). "Specific Contact Resistance using a circular Transmission Line Model". Solid State Electronics. 23 (5): 487–490. doi:10.1016/0038-1101(80)90086-6.

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

Marlow GS, Murkund BD (1982). "The Effects of Contact Size and non-zero Metal Resistance on the Determination of specific contact resistance". Solid State Electronics. 25 (2): 91–84. Bibcode:1982SSEle..25...91M. doi:10.1016/0038-1101(82)90036-3.

researchgate.net (Global: 120^th place; English: 125^th place)

Porter L, Davis RF (May 1995). "A critical review of ohmic and rectifying contacts for silicon carbide" (PDF). Materials Science and Engineering: B. 34 (2–3): 83–105. doi:10.1016/0921-5107(95)01276-1.

stanford.edu (Global: 179^th place; English: 183^rd place)

web.stanford.edu

Saraswat K. "Lecture notes EE311 Advanced Integrated Circuit Fabrication Processes Stanford University" (PDF). web.stanford.edu.

uni-konstanz.de (Global: low place; English: 8,610^th place)

kops.uni-konstanz.de

Braun S, Emre E, Raabe B, Hahn G (September 2010). Electroless nickel and copper metallization : Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers (PDF). 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain. pp. 1892–1895. doi:10.4229/25thEUPVSEC2010-2CV.2.51.

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Strang, Gilbert (2016). Introduction to linear algebra (Fifth ed.). Wellesley, MA: Wellesley-Cambridge Press. pp. 128, 168. ISBN 978-0-9802327-7-6. OCLC 956503593.

Transfer length method (English Wikipedia)

doi.org (Global: 2nd place; English: 2nd place)

harvard.edu (Global: 18th place; English: 17th place)