Transistor (English Wikipedia)

Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
Bradley, W.E. (December 1953). "The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor". Proceedings of the IRE. 41 (12): 1702–1706. Bibcode:1953PIRE...41.1702B. doi:10.1109/JRPROC.1953.274351. S2CID 51652314.
Ligenza, J. R.; Spitzer, W. G. (July 1, 1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
Hittinger, William C. (1973). "Metal–Oxide–Semiconductor Technology". Scientific American. 229 (2): 48–59. Bibcode:1973SciAm.229b..48H. doi:10.1038/scientificamerican0873-48. ISSN 0036-8733. JSTOR 24923169.
Sekigawa, Toshihiro; Hayashi, Yutaka (August 1, 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics. 27 (8): 827–828. Bibcode:1984SSEle..27..827S. doi:10.1016/0038-1101(84)90036-4. ISSN 0038-1101.
Thompson, S. E.; Chau, R. S.; Ghani, T.; Mistry, K.; Tyagi, S.; Bohr, M. T. (2005). "In search of "Forever," continued transistor scaling one new material at a time". IEEE Transactions on Semiconductor Manufacturing. 18 (1): 26–36. Bibcode:2005ITSM...18...26T. doi:10.1109/TSM.2004.841816. ISSN 0894-6507. S2CID 25283342. In the field of electronics, the planar Si metal–oxide–semiconductor field-effect transistor (MOSFET) is perhaps the most important invention.
Kaplan, Daniel (2003). Hands-On Electronics. pp. 47–54, 60–61. Bibcode:2003hoe..book.....K. ISBN 978-0-511-07668-8.
Gumyusenge, Aristide; Tran, Dung T.; Luo, Xuyi; Pitch, Gregory M.; Zhao, Yan; Jenkins, Kaelon A.; Dunn, Tim J.; Ayzner, Alexander L.; Savoie, Brett M.; Mei, Jianguo (December 7, 2018). "Semiconducting polymer blends that exhibit stable charge transport at high temperatures". Science. 362 (6419): 1131–1134. Bibcode:2018Sci...362.1131G. doi:10.1126/science.aau0759. ISSN 0036-8075. PMID 30523104.
Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Hussain, Muhammad M. (2013). "Can We Build a Truly High Performance Computer Which is Flexible and Transparent?". Scientific Reports. 3 2609. Bibcode:2013NatSR...3.2609R. doi:10.1038/srep02609. PMC 3767948. PMID 24018904.
Zhang, Kan; Seo, Jung-Hun; Zhou, Weidong; Ma, Zhenqiang (2012). "Fast flexible electronics using transferrable [sic] silicon nanomembranes". Journal of Physics D: Applied Physics. 45 (14) 143001. Bibcode:2012JPhD...45n3001Z. doi:10.1088/0022-3727/45/14/143001. S2CID 109292175.
Sun, Dong-Ming; Timmermans, Marina Y.; Tian, Ying; Nasibulin, Albert G.; Kauppinen, Esko I.; Kishimoto, Shigeru; Mizutani, Takashi; Ohno, Yutaka (2011). "Flexible high-performance carbon nanotube integrated circuits". Nature Nanotechnology. 6 (3): 156–61. Bibcode:2011NatNa...6..156S. doi:10.1038/NNANO.2011.1. PMID 21297625. S2CID 205446925.

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"November 17 – December 23, 1947: Invention of the First Transistor". American Physical Society. Archived from the original on January 20, 2013.

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Sedra, A.S. & Smith, K.C. (2004). Microelectronic circuits (Fifth ed.). New York: Oxford University Press. p. 397 and Figure 5.17. ISBN 978-0-19-514251-8.

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"New Type of Transistor from a Germanium–Tin Alloy Developed". April 28, 2023.

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Bassett, Ross Knox (2007). To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology. Johns Hopkins University Press. pp. 22–23. ISBN 978-0-8018-8639-3.
Colinge, J. P. (2008). FinFETs and Other Multi-Gate Transistors. Springer Science & Business Media. p. 11. ISBN 978-0-387-71751-7.
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Kubozono, Yoshihiro; He, Xuexia; Hamao, Shino; Uesugi, Eri; Shimo, Yuma; Mikami, Takahiro; Goto, Hidenori; Kambe, Takashi (2015). "Application of Organic Semiconductors toward Transistors". Nanodevices for Photonics and Electronics: Advances and Applications. CRC Press. p. 355. ISBN 978-981-4613-75-0.
Deschamps, Jean-Pierre; Valderrama, Elena; Terés, Lluís (October 12, 2016). Digital Systems: From Logic Gates to Processors. Springer. ISBN 978-3-319-41198-9.
Roland, James (August 1, 2016). How Transistors Work. Lerner Publications. ISBN 978-1-5124-2146-0.
Pulfrey, David L. (January 28, 2010). Understanding Modern Transistors and Diodes. Cambridge University Press. ISBN 978-1-139-48467-1.
Greig, William (April 24, 2007). Integrated Circuit Packaging, Assembly and Interconnections. Springer. p. 63. ISBN 978-0-387-33913-9. A hybrid circuit is defined as an assembly containing both active semiconductor devices (packaged and unpackaged)

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Huff, Howard; Riordan, Michael (September 1, 2007). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Semiconductor Devices: Pioneering Papers. pp. 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite book}}: ISBN / Date incompatibility (help); |journal= ignored (help)
Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
Guarnieri, M. (2017). "Seventy Years of Getting Transistorized". IEEE Industrial Electronics Magazine. 11 (4): 33–37. doi:10.1109/MIE.2017.2757775. hdl:11577/3257397. S2CID 38161381.
Lee, Thomas H. (2003). "The Design of CMOS Radio-Frequency Integrated Circuits". Soldering & Surface Mount Technology. 16 (2). Cambridge University Press. doi:10.1108/ssmt.2004.21916bae.002. ISBN 978-1-139-64377-1. S2CID 108955928. Archived from the original on October 21, 2021.{{cite journal}}: CS1 maint: periodical has ISBN (link)
Bradley, W.E. (December 1953). "The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor". Proceedings of the IRE. 41 (12): 1702–1706. Bibcode:1953PIRE...41.1702B. doi:10.1109/JRPROC.1953.274351. S2CID 51652314.
Nishizawa, Jun-Ichi (1982). "Junction Field-Effect Devices". Semiconductor Devices for Power Conditioning. pp. 241–272. doi:10.1007/978-1-4684-7263-9_11. ISBN 978-1-4684-7265-3.
Howard R. Duff (2001). "John Bardeen and transistor physics". AIP Conference Proceedings. Vol. 550. pp. 3–32. doi:10.1063/1.1354371.
Ligenza, J. R.; Spitzer, W. G. (July 1, 1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)" (PDF). Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721. Archived from the original (PDF) on July 19, 2019.
Hittinger, William C. (1973). "Metal–Oxide–Semiconductor Technology". Scientific American. 229 (2): 48–59. Bibcode:1973SciAm.229b..48H. doi:10.1038/scientificamerican0873-48. ISSN 0036-8733. JSTOR 24923169.
Howard R. Duff (2001). "John Bardeen and transistor physics". AIP Conference Proceedings. Vol. 550. pp. 3–32. doi:10.1063/1.1354371.
Sekigawa, Toshihiro; Hayashi, Yutaka (August 1, 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics. 27 (8): 827–828. Bibcode:1984SSEle..27..827S. doi:10.1016/0038-1101(84)90036-4. ISSN 0038-1101.
Thompson, S. E.; Chau, R. S.; Ghani, T.; Mistry, K.; Tyagi, S.; Bohr, M. T. (2005). "In search of "Forever," continued transistor scaling one new material at a time". IEEE Transactions on Semiconductor Manufacturing. 18 (1): 26–36. Bibcode:2005ITSM...18...26T. doi:10.1109/TSM.2004.841816. ISSN 0894-6507. S2CID 25283342. In the field of electronics, the planar Si metal–oxide–semiconductor field-effect transistor (MOSFET) is perhaps the most important invention.
Gumyusenge, Aristide; Tran, Dung T.; Luo, Xuyi; Pitch, Gregory M.; Zhao, Yan; Jenkins, Kaelon A.; Dunn, Tim J.; Ayzner, Alexander L.; Savoie, Brett M.; Mei, Jianguo (December 7, 2018). "Semiconducting polymer blends that exhibit stable charge transport at high temperatures". Science. 362 (6419): 1131–1134. Bibcode:2018Sci...362.1131G. doi:10.1126/science.aau0759. ISSN 0036-8075. PMID 30523104.
Buonomo, S.; Ronsisvalle, C.; Scollo, R.; STMicroelectronics; Musumeci, S.; Pagano, R.; Raciti, A.; University of Catania Italy (October 16, 2003). IEEE (ed.). A new monolithic emitter-switching bipolar transistor (ESBT) in high-voltage converter applications. 38th IAS annual Meeting on Conference Record of the Industry Applications Conference. Vol. 3 of 3. Salt Lake City. pp. 1810–1817. doi:10.1109/IAS.2003.1257745.
Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Hussain, Muhammad M. (2013). "Can We Build a Truly High Performance Computer Which is Flexible and Transparent?". Scientific Reports. 3 2609. Bibcode:2013NatSR...3.2609R. doi:10.1038/srep02609. PMC 3767948. PMID 24018904.
Zhang, Kan; Seo, Jung-Hun; Zhou, Weidong; Ma, Zhenqiang (2012). "Fast flexible electronics using transferrable [sic] silicon nanomembranes". Journal of Physics D: Applied Physics. 45 (14) 143001. Bibcode:2012JPhD...45n3001Z. doi:10.1088/0022-3727/45/14/143001. S2CID 109292175.
Sun, Dong-Ming; Timmermans, Marina Y.; Tian, Ying; Nasibulin, Albert G.; Kauppinen, Esko I.; Kishimoto, Shigeru; Mizutani, Takashi; Ohno, Yutaka (2011). "Flexible high-performance carbon nanotube integrated circuits". Nature Nanotechnology. 6 (3): 156–61. Bibcode:2011NatNa...6..156S. doi:10.1038/NNANO.2011.1. PMID 21297625. S2CID 205446925.

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Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
Ligenza, J. R.; Spitzer, W. G. (July 1, 1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.

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Gumyusenge, Aristide; Tran, Dung T.; Luo, Xuyi; Pitch, Gregory M.; Zhao, Yan; Jenkins, Kaelon A.; Dunn, Tim J.; Ayzner, Alexander L.; Savoie, Brett M.; Mei, Jianguo (December 7, 2018). "Semiconducting polymer blends that exhibit stable charge transport at high temperatures". Science. 362 (6419): 1131–1134. Bibcode:2018Sci...362.1131G. doi:10.1126/science.aau0759. ISSN 0036-8075. PMID 30523104.
Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Hussain, Muhammad M. (2013). "Can We Build a Truly High Performance Computer Which is Flexible and Transparent?". Scientific Reports. 3 2609. Bibcode:2013NatSR...3.2609R. doi:10.1038/srep02609. PMC 3767948. PMID 24018904.
Sun, Dong-Ming; Timmermans, Marina Y.; Tian, Ying; Nasibulin, Albert G.; Kauppinen, Esko I.; Kishimoto, Shigeru; Mizutani, Takashi; Ohno, Yutaka (2011). "Flexible high-performance carbon nanotube integrated circuits". Nature Nanotechnology. 6 (3): 156–61. Bibcode:2011NatNa...6..156S. doi:10.1038/NNANO.2011.1. PMID 21297625. S2CID 205446925.

ncbi.nlm.nih.gov

Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Hussain, Muhammad M. (2013). "Can We Build a Truly High Performance Computer Which is Flexible and Transparent?". Scientific Reports. 3 2609. Bibcode:2013NatSR...3.2609R. doi:10.1038/srep02609. PMC 3767948. PMID 24018904.

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Guarnieri, M. (2017). "Seventy Years of Getting Transistorized". IEEE Industrial Electronics Magazine. 11 (4): 33–37. doi:10.1109/MIE.2017.2757775. hdl:11577/3257397. S2CID 38161381.
Lee, Thomas H. (2003). "The Design of CMOS Radio-Frequency Integrated Circuits". Soldering & Surface Mount Technology. 16 (2). Cambridge University Press. doi:10.1108/ssmt.2004.21916bae.002. ISBN 978-1-139-64377-1. S2CID 108955928. Archived from the original on October 21, 2021.{{cite journal}}: CS1 maint: periodical has ISBN (link)
Bradley, W.E. (December 1953). "The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor". Proceedings of the IRE. 41 (12): 1702–1706. Bibcode:1953PIRE...41.1702B. doi:10.1109/JRPROC.1953.274351. S2CID 51652314.
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)" (PDF). Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721. Archived from the original (PDF) on July 19, 2019.
Thompson, S. E.; Chau, R. S.; Ghani, T.; Mistry, K.; Tyagi, S.; Bohr, M. T. (2005). "In search of "Forever," continued transistor scaling one new material at a time". IEEE Transactions on Semiconductor Manufacturing. 18 (1): 26–36. Bibcode:2005ITSM...18...26T. doi:10.1109/TSM.2004.841816. ISSN 0894-6507. S2CID 25283342. In the field of electronics, the planar Si metal–oxide–semiconductor field-effect transistor (MOSFET) is perhaps the most important invention.
Zhang, Kan; Seo, Jung-Hun; Zhou, Weidong; Ma, Zhenqiang (2012). "Fast flexible electronics using transferrable [sic] silicon nanomembranes". Journal of Physics D: Applied Physics. 45 (14) 143001. Bibcode:2012JPhD...45n3001Z. doi:10.1088/0022-3727/45/14/143001. S2CID 109292175.
Sun, Dong-Ming; Timmermans, Marina Y.; Tian, Ying; Nasibulin, Albert G.; Kauppinen, Esko I.; Kishimoto, Shigeru; Mizutani, Takashi; Ohno, Yutaka (2011). "Flexible high-performance carbon nanotube integrated circuits". Nature Nanotechnology. 6 (3): 156–61. Bibcode:2011NatNa...6..156S. doi:10.1038/NNANO.2011.1. PMID 21297625. S2CID 205446925.

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