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Vapor etching (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Vapor etching" in English language version.

refsWebsite
Global rank English rank
14doi.org
2nd place
2nd place
12worldcat.org
5th place
5th place
11semanticscholar.org
11th place
8th place
6harvard.edu
18th place
17th place

doi.org (Global: 2nd place; English: 2nd place)

  • Zhuang, Y.X.; Menon, A. (June 2005). "On the stiction of MEMS materials". Tribology Letters. 19 (2): 111–117. doi:10.1007/s11249-005-5088-1. ISSN 1023-8883. S2CID 49385010.
  • J. Holmes, P.J Snell (1966). "A vapour etching technique for the photolithography of silicon dioxide". Microelectronics and Reliability. 5 (4): 337–341. Bibcode:1966MiRe....5..337H. doi:10.1016/0026-2714(66)90162-4.
  • Chu, P.B.; Chen, J.T.; Yeh, R.; Lin, G.; Huang, J.C.P.; Warneke, B.A.; Pister, S.J. (1997). "Controlled pulse-etching with xenon difluoride". Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97). Vol. 1. IEEE. pp. 665–668. doi:10.1109/sensor.1997.613739. ISBN 0780338294. S2CID 14796800.
  • Jang, Won Ick; Choi, Chang Auck; Lee, Myung Lae; Jun, Chi Hoon; Kim, Youn Tae (2002-04-22). "Fabrication of MEMS devices by using anhydrous HF gas-phase etching with alcoholic vapor". Journal of Micromechanics and Microengineering. 12 (3): 297–306. Bibcode:2002JMiMi..12..297I. doi:10.1088/0960-1317/12/3/316. ISSN 0960-1317. S2CID 250849439.
  • Arana, Leonel R; Mas, Nuria de; Schmidt, Raymond; Franz, Aleksander J; Schmidt, Martin A; Jensen, Klavs F (2007-01-25). "Isotropic etching of silicon in fluorine gas for MEMS micromachining". Journal of Micromechanics and Microengineering. 17 (2): 384–392. Bibcode:2007JMiMi..17..384A. doi:10.1088/0960-1317/17/2/026. ISSN 0960-1317. S2CID 135708022.
  • Chu, P.B.; Chen, J.T.; Yeh, R.; Lin, G.; Huang, J.C.P.; Warneke, B.A.; Pister, S.J. (1997). "Controlled pulse-etching with xenon difluoride". Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97). Vol. 1. IEEE. pp. 665–668. doi:10.1109/sensor.1997.613739. ISBN 0780338294. S2CID 14796800.
  • Sugano, K; Tabata, O (2002-10-08). "Reduction of surface roughness and aperture size effect for etching of Si with XeF2". Journal of Micromechanics and Microengineering. 12 (6): 911–916. Bibcode:2002JMiMi..12..911S. doi:10.1088/0960-1317/12/6/323. ISSN 0960-1317. S2CID 250809960.
  • Su, K.; Tabata, O. (2002-11-01). "Effects of aperture size and pressure on XeF 2 etching of silicon". Microsystem Technologies. 9 (1–2): 11–16. doi:10.1007/s00542-002-0195-5. ISSN 0946-7076. S2CID 135772969.
  • Easter, C.; O'Neal, C.B. (October 2009). "Characterization of High-Pressure XeF2 Vapor-Phase Silicon Etching for MEMS Processing". Journal of Microelectromechanical Systems. 18 (5): 1054–1061. doi:10.1109/jmems.2009.2029976. ISSN 1057-7157. S2CID 39315299.
  • Xu, Dehui; Xiong, Bin; Wu, Guoqiang; Wang, Yuchen; Sun, Xiao; Wang, Yuelin (December 2012). "Isotropic Silicon Etching With $\hbox{XeF}_{2}$ Gas for Wafer-Level Micromachining Applications". Journal of Microelectromechanical Systems. 21 (6): 1436–1444. doi:10.1109/jmems.2012.2209403. ISSN 1057-7157. S2CID 40284249.
  • Ibbotson, Dale E.; Flamm, Daniel L.; Mucha, John A.; Donnelly, Vincent M. (1984-06-15). "Comparison of XeF2 and F-atom reactions with Si and SiO2". Applied Physics Letters. 44 (12): 1129–1131. Bibcode:1984ApPhL..44.1129I. doi:10.1063/1.94665. ISSN 0003-6951.
  • Winters, H. F.; Coburn, J. W. (January 1979). "The etching of silicon with XeF2vapor". Applied Physics Letters. 34 (1): 70–73. Bibcode:1979ApPhL..34...70W. doi:10.1063/1.90562. ISSN 0003-6951.
  • Xu, Dehui; Xiong, Bin; Wu, Guoqiang; Wang, Yuchen; Sun, Xiao; Wang, Yuelin (December 2012). "Isotropic Silicon Etching With $\hbox{XeF}_{2}$ Gas for Wafer-Level Micromachining Applications". Journal of Microelectromechanical Systems. 21 (6): 1436–1444. doi:10.1109/jmems.2012.2209403. ISSN 1057-7157. S2CID 40284249.
  • Easter, C.; O'Neal, C.B. (October 2009). "Characterization of High-Pressure $\hbox{XeF}_{2}$ Vapor-Phase Silicon Etching for MEMS Processing". Journal of Microelectromechanical Systems. 18 (5): 1054–1061. doi:10.1109/jmems.2009.2029976. ISSN 1057-7157. S2CID 39315299.

harvard.edu (Global: 18th place; English: 17th place)

ui.adsabs.harvard.edu

semanticscholar.org (Global: 11th place; English: 8th place)

api.semanticscholar.org

  • Zhuang, Y.X.; Menon, A. (June 2005). "On the stiction of MEMS materials". Tribology Letters. 19 (2): 111–117. doi:10.1007/s11249-005-5088-1. ISSN 1023-8883. S2CID 49385010.
  • Chu, P.B.; Chen, J.T.; Yeh, R.; Lin, G.; Huang, J.C.P.; Warneke, B.A.; Pister, S.J. (1997). "Controlled pulse-etching with xenon difluoride". Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97). Vol. 1. IEEE. pp. 665–668. doi:10.1109/sensor.1997.613739. ISBN 0780338294. S2CID 14796800.
  • Jang, Won Ick; Choi, Chang Auck; Lee, Myung Lae; Jun, Chi Hoon; Kim, Youn Tae (2002-04-22). "Fabrication of MEMS devices by using anhydrous HF gas-phase etching with alcoholic vapor". Journal of Micromechanics and Microengineering. 12 (3): 297–306. Bibcode:2002JMiMi..12..297I. doi:10.1088/0960-1317/12/3/316. ISSN 0960-1317. S2CID 250849439.
  • Arana, Leonel R; Mas, Nuria de; Schmidt, Raymond; Franz, Aleksander J; Schmidt, Martin A; Jensen, Klavs F (2007-01-25). "Isotropic etching of silicon in fluorine gas for MEMS micromachining". Journal of Micromechanics and Microengineering. 17 (2): 384–392. Bibcode:2007JMiMi..17..384A. doi:10.1088/0960-1317/17/2/026. ISSN 0960-1317. S2CID 135708022.
  • Chu, P.B.; Chen, J.T.; Yeh, R.; Lin, G.; Huang, J.C.P.; Warneke, B.A.; Pister, S.J. (1997). "Controlled pulse-etching with xenon difluoride". Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97). Vol. 1. IEEE. pp. 665–668. doi:10.1109/sensor.1997.613739. ISBN 0780338294. S2CID 14796800.
  • Sugano, K; Tabata, O (2002-10-08). "Reduction of surface roughness and aperture size effect for etching of Si with XeF2". Journal of Micromechanics and Microengineering. 12 (6): 911–916. Bibcode:2002JMiMi..12..911S. doi:10.1088/0960-1317/12/6/323. ISSN 0960-1317. S2CID 250809960.
  • Su, K.; Tabata, O. (2002-11-01). "Effects of aperture size and pressure on XeF 2 etching of silicon". Microsystem Technologies. 9 (1–2): 11–16. doi:10.1007/s00542-002-0195-5. ISSN 0946-7076. S2CID 135772969.
  • Easter, C.; O'Neal, C.B. (October 2009). "Characterization of High-Pressure XeF2 Vapor-Phase Silicon Etching for MEMS Processing". Journal of Microelectromechanical Systems. 18 (5): 1054–1061. doi:10.1109/jmems.2009.2029976. ISSN 1057-7157. S2CID 39315299.
  • Xu, Dehui; Xiong, Bin; Wu, Guoqiang; Wang, Yuchen; Sun, Xiao; Wang, Yuelin (December 2012). "Isotropic Silicon Etching With $\hbox{XeF}_{2}$ Gas for Wafer-Level Micromachining Applications". Journal of Microelectromechanical Systems. 21 (6): 1436–1444. doi:10.1109/jmems.2012.2209403. ISSN 1057-7157. S2CID 40284249.
  • Xu, Dehui; Xiong, Bin; Wu, Guoqiang; Wang, Yuchen; Sun, Xiao; Wang, Yuelin (December 2012). "Isotropic Silicon Etching With $\hbox{XeF}_{2}$ Gas for Wafer-Level Micromachining Applications". Journal of Microelectromechanical Systems. 21 (6): 1436–1444. doi:10.1109/jmems.2012.2209403. ISSN 1057-7157. S2CID 40284249.
  • Easter, C.; O'Neal, C.B. (October 2009). "Characterization of High-Pressure $\hbox{XeF}_{2}$ Vapor-Phase Silicon Etching for MEMS Processing". Journal of Microelectromechanical Systems. 18 (5): 1054–1061. doi:10.1109/jmems.2009.2029976. ISSN 1057-7157. S2CID 39315299.

worldcat.org (Global: 5th place; English: 5th place)

search.worldcat.org

  • Zhuang, Y.X.; Menon, A. (June 2005). "On the stiction of MEMS materials". Tribology Letters. 19 (2): 111–117. doi:10.1007/s11249-005-5088-1. ISSN 1023-8883. S2CID 49385010.
  • Handbook of silicon based MEMS : materials & technologies. Lindroos, Veikko (Second ed.). Norwich. 2015-09-02. ISBN 9780323312233. OCLC 932060052.{{cite book}}: CS1 maint: location missing publisher (link) CS1 maint: others (link)
  • Jang, Won Ick; Choi, Chang Auck; Lee, Myung Lae; Jun, Chi Hoon; Kim, Youn Tae (2002-04-22). "Fabrication of MEMS devices by using anhydrous HF gas-phase etching with alcoholic vapor". Journal of Micromechanics and Microengineering. 12 (3): 297–306. Bibcode:2002JMiMi..12..297I. doi:10.1088/0960-1317/12/3/316. ISSN 0960-1317. S2CID 250849439.
  • Arana, Leonel R; Mas, Nuria de; Schmidt, Raymond; Franz, Aleksander J; Schmidt, Martin A; Jensen, Klavs F (2007-01-25). "Isotropic etching of silicon in fluorine gas for MEMS micromachining". Journal of Micromechanics and Microengineering. 17 (2): 384–392. Bibcode:2007JMiMi..17..384A. doi:10.1088/0960-1317/17/2/026. ISSN 0960-1317. S2CID 135708022.
  • Sugano, K; Tabata, O (2002-10-08). "Reduction of surface roughness and aperture size effect for etching of Si with XeF2". Journal of Micromechanics and Microengineering. 12 (6): 911–916. Bibcode:2002JMiMi..12..911S. doi:10.1088/0960-1317/12/6/323. ISSN 0960-1317. S2CID 250809960.
  • Su, K.; Tabata, O. (2002-11-01). "Effects of aperture size and pressure on XeF 2 etching of silicon". Microsystem Technologies. 9 (1–2): 11–16. doi:10.1007/s00542-002-0195-5. ISSN 0946-7076. S2CID 135772969.
  • Easter, C.; O'Neal, C.B. (October 2009). "Characterization of High-Pressure XeF2 Vapor-Phase Silicon Etching for MEMS Processing". Journal of Microelectromechanical Systems. 18 (5): 1054–1061. doi:10.1109/jmems.2009.2029976. ISSN 1057-7157. S2CID 39315299.
  • Xu, Dehui; Xiong, Bin; Wu, Guoqiang; Wang, Yuchen; Sun, Xiao; Wang, Yuelin (December 2012). "Isotropic Silicon Etching With $\hbox{XeF}_{2}$ Gas for Wafer-Level Micromachining Applications". Journal of Microelectromechanical Systems. 21 (6): 1436–1444. doi:10.1109/jmems.2012.2209403. ISSN 1057-7157. S2CID 40284249.
  • Ibbotson, Dale E.; Flamm, Daniel L.; Mucha, John A.; Donnelly, Vincent M. (1984-06-15). "Comparison of XeF2 and F-atom reactions with Si and SiO2". Applied Physics Letters. 44 (12): 1129–1131. Bibcode:1984ApPhL..44.1129I. doi:10.1063/1.94665. ISSN 0003-6951.
  • Winters, H. F.; Coburn, J. W. (January 1979). "The etching of silicon with XeF2vapor". Applied Physics Letters. 34 (1): 70–73. Bibcode:1979ApPhL..34...70W. doi:10.1063/1.90562. ISSN 0003-6951.
  • Xu, Dehui; Xiong, Bin; Wu, Guoqiang; Wang, Yuchen; Sun, Xiao; Wang, Yuelin (December 2012). "Isotropic Silicon Etching With $\hbox{XeF}_{2}$ Gas for Wafer-Level Micromachining Applications". Journal of Microelectromechanical Systems. 21 (6): 1436–1444. doi:10.1109/jmems.2012.2209403. ISSN 1057-7157. S2CID 40284249.
  • Easter, C.; O'Neal, C.B. (October 2009). "Characterization of High-Pressure $\hbox{XeF}_{2}$ Vapor-Phase Silicon Etching for MEMS Processing". Journal of Microelectromechanical Systems. 18 (5): 1054–1061. doi:10.1109/jmems.2009.2029976. ISSN 1057-7157. S2CID 39315299.