Wide-bandgap semiconductor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Wide-bandgap semiconductor" in English language version.

refsWebsite

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5doi.org

2^nd place

3semanticscholar.org

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2books.google.com

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2handle.net

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2worldcat.org

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1gatech.edu

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1energy.gov

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1arstechnica.com

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1web.archive.org

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1ioffe.ru

low place

1aber.ac.uk

low place

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1harvard.edu

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1nih.gov

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1himani-arora-ha.github.io

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1ieee.org

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1osti.gov

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aber.ac.uk

pure.aber.ac.uk

Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J (2008). "Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy" (PDF). Journal of Physics: Condensed Matter. 20 (7): 075233. Bibcode:2008JPCM...20g5233E. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612. S2CID 52027854.

arstechnica.com

Gallagher, Sean (9 June 2016). "A reprieve for Moore's Law: milspec chip writes computing's next chapter". Ars Technica.

books.google.com

Safa O. Kasap; Peter Capper (2006). Springer handbook of electronic and photonic materials. Springer. pp. 54, 327. ISBN 978-0-387-26059-4.
John Dakin, Robert G. W. Brown Handbook of optoelectronics, Volume 1, CRC Press, 2006 ISBN 0-7503-0646-7 p. 57

doi.org

Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J (2008). "Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy" (PDF). Journal of Physics: Condensed Matter. 20 (7): 075233. Bibcode:2008JPCM...20g5233E. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612. S2CID 52027854.
O. Madelung; U. Rössler; M. Schulz, eds. (1998). "Cuprous oxide (Cu2O) band structure, band energies". Landolt-Börnstein – Group III Condensed Matter. Numerical Data and Functional Relationships in Science and Technology. Vol. 41C: Non-Tetrahedrally Bonded Elements and Binary Compounds I. pp. 1–4. doi:10.1007/10681727_62. ISBN 978-3-540-64583-2.
Arora, Himani; Erbe, Artur (2021). "Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe". InfoMat. 3 (6): 662–693. doi:10.1002/inf2.12160. ISSN 2567-3165.
Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (20 November 2019). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.
Ozpineci, Burak; Tolbert, Leon (27 September 2011), "Silicon Carbide: Smaller, Faster, Tougher", IEEE Spectrum, doi:10.1109/MSPEC.2011.6027247, OSTI 1491298, S2CID 21307005, retrieved 3 September 2014

energy.gov

www1.eere.energy.gov

"Wide Bandgap Semiconductors: Pursuing the Promise (DOE/EE-0910)" (PDF). DOE Advanced Manufacturing Office. April 2013. Retrieved 3 September 2014.

gatech.edu

shensc.ece.gatech.edu

Shen, Shyh-Chiang. "Wide-bandgap device research and development at SRL". Georgia Institute of Technology Semiconductor Research Laboratory. Retrieved 3 September 2014.

handle.net

hdl.handle.net

Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J (2008). "Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy" (PDF). Journal of Physics: Condensed Matter. 20 (7): 075233. Bibcode:2008JPCM...20g5233E. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612. S2CID 52027854.
Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (20 November 2019). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.

harvard.edu

ui.adsabs.harvard.edu

Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J (2008). "Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy" (PDF). Journal of Physics: Condensed Matter. 20 (7): 075233. Bibcode:2008JPCM...20g5233E. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612. S2CID 52027854.

himani-arora-ha.github.io

Arora, Himani (2020). "Charge transport in two-dimensional materials and their electronic applications" (PDF). Doctoral Dissertation. Retrieved 1 July 2021.

ieee.org

spectrum.ieee.org

Ozpineci, Burak; Tolbert, Leon (27 September 2011), "Silicon Carbide: Smaller, Faster, Tougher", IEEE Spectrum, doi:10.1109/MSPEC.2011.6027247, OSTI 1491298, S2CID 21307005, retrieved 3 September 2014

ioffe.ru

"NSM Archive – Physical Properties of Semiconductors". ioffe.ru. Archived from the original on 28 September 2015. Retrieved 10 July 2010.

nih.gov

pubmed.ncbi.nlm.nih.gov

Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (20 November 2019). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.

osti.gov

Ozpineci, Burak; Tolbert, Leon (27 September 2011), "Silicon Carbide: Smaller, Faster, Tougher", IEEE Spectrum, doi:10.1109/MSPEC.2011.6027247, OSTI 1491298, S2CID 21307005, retrieved 3 September 2014

semanticscholar.org

api.semanticscholar.org

Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J (2008). "Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy" (PDF). Journal of Physics: Condensed Matter. 20 (7): 075233. Bibcode:2008JPCM...20g5233E. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612. S2CID 52027854.
Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (20 November 2019). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.
Ozpineci, Burak; Tolbert, Leon (27 September 2011), "Silicon Carbide: Smaller, Faster, Tougher", IEEE Spectrum, doi:10.1109/MSPEC.2011.6027247, OSTI 1491298, S2CID 21307005, retrieved 3 September 2014

web.archive.org

"NSM Archive – Physical Properties of Semiconductors". ioffe.ru. Archived from the original on 28 September 2015. Retrieved 10 July 2010.

worldcat.org

Arora, Himani; Erbe, Artur (2021). "Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe". InfoMat. 3 (6): 662–693. doi:10.1002/inf2.12160. ISSN 2567-3165.
Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (20 November 2019). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.