Germanio-antimonio-telurio (Spanish Wikipedia)

Analysis of information sources in references of the Wikipedia article "Germanio-antimonio-telurio" in Spanish language version.

refsWebsite

Global rank Spanish rank

6doi.org

2^nd place

4harvard.edu

18^th place

34^th place

1handle.net

102^nd place

516^th place

1semanticscholar.org

11^th place

79^th place

doi.org

dx.doi.org

Deo V. Shenai, Ronald L. DiCarlo, Michael B. Power, Artashes Amamchyan, Randall J. Goyette, Egbert Woelk; Dicarlo; Power; Amamchyan; Goyette; Woelk (2007). «Safer alternative liquid germanium precursors for MOVPE». Journal of Crystal Growth 298: 172-175. Bibcode:2007JCrGr.298..172S. doi:10.1016/j.jcrysgro.2006.10.194.
Bosi, M.; Attolini, G.; Ferrari, C.; Frigeri, C.; Rimada Herrera, J.C.; Gombia, E.; Pelosi, C.; Peng, R.W. (2008). «MOVPE growth of homoepitaxial germanium». Journal of Crystal Growth 310 (14): 3282. Bibcode:2008JCrGr.310.3282B. doi:10.1016/j.jcrysgro.2008.04.009.
Attolini, G.; Bosi, M.; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S.; Timò, G. (2008). «Homo and hetero epitaxy of Germanium using isobutylgermane». Thin Solid Films 517 (1): 404-406. Bibcode:2008TSF...517..404A. doi:10.1016/j.tsf.2008.08.137.
M. Longo, O. Salicio, C. Wiemer, R. Fallica, A. Molle, M. Fanciulli, C. Giesen, B. Seitzinger,P.K. Baumann, M. Heuken, S. Rushworth; Salicio; Wiemer; Fallica; Molle; Fanciulli; Giesen; Seitzinger; Baumann; Heuken; Rushworth (2008). «Growth study of GexSbyTez deposited by MOCVD under nitrogen for non‐volatile memory applications». Journal of Crystal Growth 310 (23): 5053-5057. Bibcode:2008JCrGr.310.5053L. doi:10.1016/j.jcrysgro.2008.07.054.
A. Abrutis, V. Plausinaitiene, M. Skapas, C. Wiemer, O. Salicio, A. Pirovano, E. Varesi, S. Rushworth, W. Gawelda, J. Siegel; Plausinaitiene; Skapas; Wiemer; Salicio; Pirovano; Varesi; Rushworth; Gawelda; Siegel (2008). «Hot‐Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications». Chemistry of Materials 20 (11): 3557. doi:10.1021/cm8004584. hdl:10261/93002.
X. Shi; M. Schaekers; F. Leys; R. Loo; M. Caymax; R. Brus; C. Zhao; B. Lamare; E. Woelk; D. Shenai (2006). «Germanium Precursors for Ge and SiGe Deposition». ECS Transactions 3: 849. S2CID 110550188. doi:10.1149/1.2355880.

handle.net

hdl.handle.net

A. Abrutis, V. Plausinaitiene, M. Skapas, C. Wiemer, O. Salicio, A. Pirovano, E. Varesi, S. Rushworth, W. Gawelda, J. Siegel; Plausinaitiene; Skapas; Wiemer; Salicio; Pirovano; Varesi; Rushworth; Gawelda; Siegel (2008). «Hot‐Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications». Chemistry of Materials 20 (11): 3557. doi:10.1021/cm8004584. hdl:10261/93002.

harvard.edu

adsabs.harvard.edu

Deo V. Shenai, Ronald L. DiCarlo, Michael B. Power, Artashes Amamchyan, Randall J. Goyette, Egbert Woelk; Dicarlo; Power; Amamchyan; Goyette; Woelk (2007). «Safer alternative liquid germanium precursors for MOVPE». Journal of Crystal Growth 298: 172-175. Bibcode:2007JCrGr.298..172S. doi:10.1016/j.jcrysgro.2006.10.194.
Bosi, M.; Attolini, G.; Ferrari, C.; Frigeri, C.; Rimada Herrera, J.C.; Gombia, E.; Pelosi, C.; Peng, R.W. (2008). «MOVPE growth of homoepitaxial germanium». Journal of Crystal Growth 310 (14): 3282. Bibcode:2008JCrGr.310.3282B. doi:10.1016/j.jcrysgro.2008.04.009.
Attolini, G.; Bosi, M.; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S.; Timò, G. (2008). «Homo and hetero epitaxy of Germanium using isobutylgermane». Thin Solid Films 517 (1): 404-406. Bibcode:2008TSF...517..404A. doi:10.1016/j.tsf.2008.08.137.
M. Longo, O. Salicio, C. Wiemer, R. Fallica, A. Molle, M. Fanciulli, C. Giesen, B. Seitzinger,P.K. Baumann, M. Heuken, S. Rushworth; Salicio; Wiemer; Fallica; Molle; Fanciulli; Giesen; Seitzinger; Baumann; Heuken; Rushworth (2008). «Growth study of GexSbyTez deposited by MOCVD under nitrogen for non‐volatile memory applications». Journal of Crystal Growth 310 (23): 5053-5057. Bibcode:2008JCrGr.310.5053L. doi:10.1016/j.jcrysgro.2008.07.054.

semanticscholar.org

api.semanticscholar.org

X. Shi; M. Schaekers; F. Leys; R. Loo; M. Caymax; R. Brus; C. Zhao; B. Lamare; E. Woelk; D. Shenai (2006). «Germanium Precursors for Ge and SiGe Deposition». ECS Transactions 3: 849. S2CID 110550188. doi:10.1149/1.2355880.