Nitruro de galio-indio (Spanish Wikipedia)

Analysis of information sources in references of the Wikipedia article "Nitruro de galio-indio" in Spanish language version.

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  • M. Auf der Maur, K. Lorenz and A. Di Carlo. (2012). «"Band gap engineering approaches to increase InGaN/GaN LED efficiency"». Physica status solidi (c) 44 (3-5): 83-88. doi:10.1007/s11082-011-9536-x. 
  • Linti, G. The Group 13 Metals Aluminium, Gallium, Indium and Thallium. Chemical Patterns and Peculiarities. Edited by Simon Aldridge and AnthonyJ. Downs.Angew. Chem. doi:10.1002/anie.201105633. 
  • V. Kachkanov, K.P. O’Donnell, S. Pereira, R.W. Martin (2007). Phil. Mag. 87 (13): 1999-2017. doi:10.1080/14786430701342164. 
  • A. Reale1, A. Di Carlo, A. Vinattieri, M. Colocci, F. Rossi, N. Armani, C. Ferrari, G. Salviati, L. Lazzarini, V. Grillo. Investigation of the recombination dynamics in low In-content InGaN MQWs by means of cathodoluminescence and photoluminescence excitation. doi:10.1002/pssc.200460305. 
  • Rak Jun Choi, Hyung Jae Lee, Yoon-bong Hahn, Hyung Koun Cho. Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities. doi:10.1007/BF02705411. 
  • Liang-Yi Chen, Ying-Yuan Huang, Chun-Hsiang Chang, Yu-Hsuan Sun, Yun-Wei Cheng, Min-Yung Ke, Cheng-Pin Chen, and JianJang Huang. High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes. doi:10.1364/OE.18.007664. 
  • C Skierbiszewski, P Perlin, I Grzegory, Z R Wasilewski, M Siekacz, A Feduniewicz, P Wisniewski, J Borysiuk, P Prystawko, G Kamler, T Suski and S Porowski. High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy. doi:10.1088/0268-1242/20/8/030. 
  • Hisashi Masui, Hitoshi Sato, Hirokuni Asamizu, Mathew C. Schmidt, Natalie N. Fellows, Shuji Nakamura, and Steven P. DenBaars. Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents. doi:10.1143/JJAP.46.L627. 
  • Yu-Jung Lu (呂宥蓉), Hon-Way Lin (林弘偉), Hung-Ying Chen (陳虹穎), Yu-Chen Yang (楊右丞), and Shangjr Gwo (果尚志). Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources. doi:10.1063/1.3597211. 
  • Hon-Way Lin (林弘偉), Yu-Jung Lu (呂宥蓉), Hung-Ying Chen (陳虹穎), Hong-Mao Lee (李弘貿), and Shangjr Gwo (果尚志). InGaN/GaN nanorod array white light-emitting diode. doi:10.1063/1.3478515. 
  • Ivan Eliashevich. InGaN blue light-emitting diodes with optimized n-GaN layer. doi:10.1117/12.344483. 
  • F. Sacconi, M. Auf der Maur, A. Pecchia, M. Lopez, A. Di Carlo. "Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs" (2012). Physica status solidi (c) 9 (5): 1315-1319. doi:10.1002/pssc.201100205. 
  • Lai, Y.; Liu, C.; Chen, Z. Tuning the emitting wavelength of InGaN/GaN superlattices from blue, green to yellow by controlling the size of InGaN quasi-quantum dot. doi:10.1016/j.tsf.2005.07.090. 
  • M. Auf der Maur, K. Lorenz and A. Di Carlo. "Band gap engineering approaches to increase InGaN/GaN LED efficiency" (2012). Physica status solidi (c) 44 (3-5): 83-88. doi:10.1007/s11082-011-9536-x. 

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