Silicio tensado (Spanish Wikipedia)

Analysis of information sources in references of the Wikipedia article "Silicio tensado" in Spanish language version.

refsWebsite

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low place

low place

doi.org

dx.doi.org

Sun, Y.; Thompson, S. E.; Nishida, T. (2007). «Physics of strain effects in semiconductors and metal–oxide–semiconductor field-effect transistors». Journal of Applied Physics 101 (10): 104503-104503-22. Bibcode:2007JAP...101j4503S. ISSN 0021-8979. doi:10.1063/1.2730561.
Bedell, S.W.; Khakifirooz, A.; Sadana, D.K. (2014). «Strain scaling for CMOS». MRS Bulletin 39 (2): 131-137. ISSN 0883-7694. doi:10.1557/mrs.2014.5.
Vogelsang, T.; Hofmann, K.R. (November 1992). «Electron mobilities and high-field drift velocities in strained silicon on silicon-germanium substrates». IEEE Transactions on Electron Devices 39 (11): 2641-2642. doi:10.1109/16.163490.

edn.com

Lammers, David (13 de agosto de 2002). «Intel adopts strained silicon for 90-nanometer process». EDN (en inglés estadounidense). Consultado el 9 de julio de 2022.

harvard.edu

adsabs.harvard.edu

Sun, Y.; Thompson, S. E.; Nishida, T. (2007). «Physics of strain effects in semiconductors and metal–oxide–semiconductor field-effect transistors». Journal of Applied Physics 101 (10): 104503-104503-22. Bibcode:2007JAP...101j4503S. ISSN 0021-8979. doi:10.1063/1.2730561.

ieee.org

ieeexplore.ieee.org

Vogelsang, T.; Hofmann, K.R. (November 1992). «Electron mobilities and high-field drift velocities in strained silicon on silicon-germanium substrates». IEEE Transactions on Electron Devices 39 (11): 2641-2642. doi:10.1109/16.163490.

issn.org

portal.issn.org

Sun, Y.; Thompson, S. E.; Nishida, T. (2007). «Physics of strain effects in semiconductors and metal–oxide–semiconductor field-effect transistors». Journal of Applied Physics 101 (10): 104503-104503-22. Bibcode:2007JAP...101j4503S. ISSN 0021-8979. doi:10.1063/1.2730561.
Bedell, S.W.; Khakifirooz, A.; Sadana, D.K. (2014). «Strain scaling for CMOS». MRS Bulletin 39 (2): 131-137. ISSN 0883-7694. doi:10.1557/mrs.2014.5.

mit.edu

dspace.mit.edu

E. Tanasa, Corina (September 2002), Hole Mobility and Effective Mass in SiGe Heterostructure-Based PMOS Devices, Massachusetts Institute of Technology .