انرژی اورباخ (Persian Wikipedia)

Analysis of information sources in references of the Wikipedia article "انرژی اورباخ" in Persian language version.

refsWebsite

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8doi.org

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7worldcat.org

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5harvard.edu

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2aps.org

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1springer.com

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aps.org

journals.aps.org

Urbach, Franz (1953-12-01). "The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids". Physical Review. 92 (5): 1324. Bibcode:1953PhRv...92.1324U. doi:10.1103/physrev.92.1324. ISSN 0031-899X.
Cody, G. D.; Tiedje, T.; Abeles, B.; Brooks, B.; Goldstein, Y. (1981-11-16). "Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon". Physical Review Letters. 47 (20): 1480–1483. Bibcode:1981PhRvL..47.1480C. doi:10.1103/physrevlett.47.1480. ISSN 0031-9007. خطای یادکرد: برچسب <ref> نامعتبر؛ نام «:1» چندین بار با محتوای متفاوت تعریف شده است. (صفحهٔ راهنما را مطالعه کنید.).

books.google.com

Hook, J. R.; Hall, H. E. (1991-09-05). Solid State Physics (به انگلیسی). Wiley. ISBN 978-0-471-92804-1.

doi.org

Eggert, John; Biltz, Martin (1938-01-01). "The spectral sensitivity of photographic layers". Transactions of the Faraday Society (به انگلیسی). 34: 892–901. doi:10.1039/TF9383400892. ISSN 0014-7672.
Urbach, Franz (1953-12-01). "The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids". Physical Review. 92 (5): 1324. Bibcode:1953PhRv...92.1324U. doi:10.1103/physrev.92.1324. ISSN 0031-899X.
Tauc, J. (1970-08-01). "Absorption edge and internal electric fields in amorphous semiconductors". Materials Research Bulletin (به انگلیسی). 5 (8): 721–729. doi:10.1016/0025-5408(70)90112-1. ISSN 0025-5408.
Wronski, C.R.; Abeles, B.; Tiedje, T.; Cody, G.D. (1982-12-01). "Recombination centers in phosphorous doped hydrogenated amorphous silicon". Solid State Communications (به انگلیسی). 44 (10): 1423–1426. Bibcode:1982SSCom..44.1423W. doi:10.1016/0038-1098(82)90023-0. ISSN 0038-1098.
Cody, G. D.; Tiedje, T.; Abeles, B.; Brooks, B.; Goldstein, Y. (1981-11-16). "Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon". Physical Review Letters. 47 (20): 1480–1483. Bibcode:1981PhRvL..47.1480C. doi:10.1103/physrevlett.47.1480. ISSN 0031-9007. خطای یادکرد: برچسب <ref> نامعتبر؛ نام «:1» چندین بار با محتوای متفاوت تعریف شده است. (صفحهٔ راهنما را مطالعه کنید.).
Kurik, M. V. (1971). "Urbach rule". Physica Status Solidi A (به انگلیسی). 8 (1): 9–45. Bibcode:1971PSSAR...8....9K. doi:10.1002/pssa.2210080102. ISSN 1521-396X.
Stutzmann, M. (1989-10-01). "The defect density in amorphous silicon". Philosophical Magazine B. 60 (4): 531–546. Bibcode:1989PMagB..60..531S. doi:10.1080/13642818908205926. ISSN 1364-2812.

dx.doi.org

Tauc, J. (1970-08-01). "Absorption edge and internal electric fields in amorphous semiconductors". Materials Research Bulletin (به انگلیسی). 5 (8): 721–729. doi:10.1016/0025-5408(70)90112-1. ISSN 0025-5408.

harvard.edu

ui.adsabs.harvard.edu

Urbach, Franz (1953-12-01). "The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids". Physical Review. 92 (5): 1324. Bibcode:1953PhRv...92.1324U. doi:10.1103/physrev.92.1324. ISSN 0031-899X.
Wronski, C.R.; Abeles, B.; Tiedje, T.; Cody, G.D. (1982-12-01). "Recombination centers in phosphorous doped hydrogenated amorphous silicon". Solid State Communications (به انگلیسی). 44 (10): 1423–1426. Bibcode:1982SSCom..44.1423W. doi:10.1016/0038-1098(82)90023-0. ISSN 0038-1098.
Cody, G. D.; Tiedje, T.; Abeles, B.; Brooks, B.; Goldstein, Y. (1981-11-16). "Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon". Physical Review Letters. 47 (20): 1480–1483. Bibcode:1981PhRvL..47.1480C. doi:10.1103/physrevlett.47.1480. ISSN 0031-9007. خطای یادکرد: برچسب <ref> نامعتبر؛ نام «:1» چندین بار با محتوای متفاوت تعریف شده است. (صفحهٔ راهنما را مطالعه کنید.).
Kurik, M. V. (1971). "Urbach rule". Physica Status Solidi A (به انگلیسی). 8 (1): 9–45. Bibcode:1971PSSAR...8....9K. doi:10.1002/pssa.2210080102. ISSN 1521-396X.
Stutzmann, M. (1989-10-01). "The defect density in amorphous silicon". Philosophical Magazine B. 60 (4): 531–546. Bibcode:1989PMagB..60..531S. doi:10.1080/13642818908205926. ISSN 1364-2812.

rsc.org

pubs.rsc.org

Eggert, John; Biltz, Martin (1938-01-01). "The spectral sensitivity of photographic layers". Transactions of the Faraday Society (به انگلیسی). 34: 892–901. doi:10.1039/TF9383400892. ISSN 0014-7672.

sciencedirect.com

Wronski, C.R.; Abeles, B.; Tiedje, T.; Cody, G.D. (1982-12-01). "Recombination centers in phosphorous doped hydrogenated amorphous silicon". Solid State Communications (به انگلیسی). 44 (10): 1423–1426. Bibcode:1982SSCom..44.1423W. doi:10.1016/0038-1098(82)90023-0. ISSN 0038-1098.

springer.com

Brotherton, S. D. (2013). Introduction to Thin Film Transistors: Physics and Technology of TFTs (به انگلیسی). Springer International Publishing. ISBN 978-3-319-00001-5.

wiley.com

onlinelibrary.wiley.com

Kurik, M. V. (1971). "Urbach rule". Physica Status Solidi A (به انگلیسی). 8 (1): 9–45. Bibcode:1971PSSAR...8....9K. doi:10.1002/pssa.2210080102. ISSN 1521-396X.

worldcat.org

Eggert, John; Biltz, Martin (1938-01-01). "The spectral sensitivity of photographic layers". Transactions of the Faraday Society (به انگلیسی). 34: 892–901. doi:10.1039/TF9383400892. ISSN 0014-7672.
Urbach, Franz (1953-12-01). "The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids". Physical Review. 92 (5): 1324. Bibcode:1953PhRv...92.1324U. doi:10.1103/physrev.92.1324. ISSN 0031-899X.
Tauc, J. (1970-08-01). "Absorption edge and internal electric fields in amorphous semiconductors". Materials Research Bulletin (به انگلیسی). 5 (8): 721–729. doi:10.1016/0025-5408(70)90112-1. ISSN 0025-5408.
Wronski, C.R.; Abeles, B.; Tiedje, T.; Cody, G.D. (1982-12-01). "Recombination centers in phosphorous doped hydrogenated amorphous silicon". Solid State Communications (به انگلیسی). 44 (10): 1423–1426. Bibcode:1982SSCom..44.1423W. doi:10.1016/0038-1098(82)90023-0. ISSN 0038-1098.
Cody, G. D.; Tiedje, T.; Abeles, B.; Brooks, B.; Goldstein, Y. (1981-11-16). "Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon". Physical Review Letters. 47 (20): 1480–1483. Bibcode:1981PhRvL..47.1480C. doi:10.1103/physrevlett.47.1480. ISSN 0031-9007. خطای یادکرد: برچسب <ref> نامعتبر؛ نام «:1» چندین بار با محتوای متفاوت تعریف شده است. (صفحهٔ راهنما را مطالعه کنید.).
Kurik, M. V. (1971). "Urbach rule". Physica Status Solidi A (به انگلیسی). 8 (1): 9–45. Bibcode:1971PSSAR...8....9K. doi:10.1002/pssa.2210080102. ISSN 1521-396X.
Stutzmann, M. (1989-10-01). "The defect density in amorphous silicon". Philosophical Magazine B. 60 (4): 531–546. Bibcode:1989PMagB..60..531S. doi:10.1080/13642818908205926. ISSN 1364-2812.