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Busana, M. G.; Prudenziati, M.; Hormadaly, J. (2006). "Microstructure development and electrical properties of RuO2-based lead-free thick film resistors". Journal of Materials Science: Materials in Electronics. 17 (11): 951. doi:10.1007/s10854-006-0036-x. hdl:11380/303403. S2CID135485712.
Rane, Sunit; Prudenziati, Maria; Morten, Bruno (2007). "Environment friendly perovskite ruthenate based thick film resistors". Materials Letters. 61 (2): 595. doi:10.1016/j.matlet.2006.05.015. hdl:11380/307664.
Busana, M. G.; Prudenziati, M.; Hormadaly, J. (2006). "Microstructure development and electrical properties of RuO2-based lead-free thick film resistors". Journal of Materials Science: Materials in Electronics. 17 (11): 951. doi:10.1007/s10854-006-0036-x. hdl:11380/303403. S2CID135485712.
Rane, Sunit; Prudenziati, Maria; Morten, Bruno (2007). "Environment friendly perovskite ruthenate based thick film resistors". Materials Letters. 61 (2): 595. doi:10.1016/j.matlet.2006.05.015. hdl:11380/307664.
Loferski, Patricia J. ; Ghalayini, Zachary T. and Singerling, Sheryl A. (2018) Platinum-group metalsبایگانیشده در ۲۳ دسامبر ۲۰۲۱ توسط Wayback Machine. 2016 Minerals Yearbook. USGS. p. 57.3.
Loferski, Patricia J. ; Ghalayini, Zachary T. and Singerling, Sheryl A. (2018) Platinum-group metalsبایگانیشده در ۲۳ دسامبر ۲۰۲۱ توسط Wayback Machine. 2016 Minerals Yearbook. USGS. p. 57.3.
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Busana, M. G.; Prudenziati, M.; Hormadaly, J. (2006). "Microstructure development and electrical properties of RuO2-based lead-free thick film resistors". Journal of Materials Science: Materials in Electronics. 17 (11): 951. doi:10.1007/s10854-006-0036-x. hdl:11380/303403. S2CID135485712.
Loferski, Patricia J. ; Ghalayini, Zachary T. and Singerling, Sheryl A. (2018) Platinum-group metalsبایگانیشده در ۲۳ دسامبر ۲۰۲۱ توسط Wayback Machine. 2016 Minerals Yearbook. USGS. p. 57.3.
Loferski, Patricia J. ; Ghalayini, Zachary T. and Singerling, Sheryl A. (2018) Platinum-group metalsبایگانیشده در ۲۳ دسامبر ۲۰۲۱ توسط Wayback Machine. 2016 Minerals Yearbook. USGS. p. 57.3.