سونوس (Persian Wikipedia)

Analysis of information sources in references of the Wikipedia article "سونوس" in Persian language version.

refsWebsite

Global rank Persian rank

3harvard.edu

18^th place

50^th place

3doi.org

2^nd place

3worldcat.org

5^th place

12^th place

2books.google.com

3^rd place

6^th place

2researchgate.net

120^th place

331^st place

1psu.edu

207^th place

287^th place

books.google.com (Global: 3^rd place; Persian: 6^th place)

Micheloni, Rino; Crippa, Luca; Marelli, Alessia (2010). Inside NAND Flash Memories (Google Books) (به انگلیسی). Springer Science & Business Media. ISBN 9789048194315.
Prince, Betty (2007). Emerging Memories: Technologies and Trends (به انگلیسی). Springer Science & Business Media. ISBN 978-0-306-47553-5.

doi.org (Global: 2^nd place; Persian: 2^nd place)

Chen, P. C. Y. (1977). "Threshold-alterable Si-gate MOS devices". IEEE Transactions on Electron Devices. 24 (5): 584–586. Bibcode:1977ITED...24..584C. doi:10.1109/T-ED.1977.18783. ISSN 0018-9383.
Chen, S. C.; Chang, T. C.; Liu, P. T.; Wu, Y. C.; Lin, P. S.; Tseng, B. H.; Shy, J. H.; Sze, S. M.; Chang, C. Y. (2007). "A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory". IEEE Electron Device Letters. 28 (9): 809–811. Bibcode:2007IEDL...28..809C. doi:10.1109/LED.2007.903885. ISSN 0741-3106.
Lee, M. C.; Wong, H. Y. (2013). "Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices". IEEE Transactions on Electron Devices. 60 (10): 3256–3264. Bibcode:2013ITED...60.3256L. doi:10.1109/TED.2013.2279410. ISSN 0018-9383.

harvard.edu (Global: 18^th place; Persian: 50^th place)

ui.adsabs.harvard.edu

Chen, P. C. Y. (1977). "Threshold-alterable Si-gate MOS devices". IEEE Transactions on Electron Devices. 24 (5): 584–586. Bibcode:1977ITED...24..584C. doi:10.1109/T-ED.1977.18783. ISSN 0018-9383.
Chen, S. C.; Chang, T. C.; Liu, P. T.; Wu, Y. C.; Lin, P. S.; Tseng, B. H.; Shy, J. H.; Sze, S. M.; Chang, C. Y. (2007). "A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory". IEEE Electron Device Letters. 28 (9): 809–811. Bibcode:2007IEDL...28..809C. doi:10.1109/LED.2007.903885. ISSN 0741-3106.
Lee, M. C.; Wong, H. Y. (2013). "Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices". IEEE Transactions on Electron Devices. 60 (10): 3256–3264. Bibcode:2013ITED...60.3256L. doi:10.1109/TED.2013.2279410. ISSN 0018-9383.

psu.edu (Global: 207^th place; Persian: 287^th place)

citeseerx.ist.psu.edu

Remond, I.; Akil, N. (May 2006). "Modeling of transient programming and erasing of SONOS non-volatile memories". Technical Note PR-TN 2006/00368. Koninklijke Philips Electronics N.V. CiteSeerX 10.1.1.72.314.

researchgate.net (Global: 120^th place; Persian: 331^st place)

Chen, S. C.; Chang, T. C.; Liu, P. T.; Wu, Y. C.; Lin, P. S.; Tseng, B. H.; Shy, J. H.; Sze, S. M.; Chang, C. Y. (2007). "A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory". IEEE Electron Device Letters. 28 (9): 809–811. Bibcode:2007IEDL...28..809C. doi:10.1109/LED.2007.903885. ISSN 0741-3106.
Lee, M. C.; Wong, H. Y. (2013). "Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices". IEEE Transactions on Electron Devices. 60 (10): 3256–3264. Bibcode:2013ITED...60.3256L. doi:10.1109/TED.2013.2279410. ISSN 0018-9383.

worldcat.org (Global: 5^th place; Persian: 12^th place)

Chen, P. C. Y. (1977). "Threshold-alterable Si-gate MOS devices". IEEE Transactions on Electron Devices. 24 (5): 584–586. Bibcode:1977ITED...24..584C. doi:10.1109/T-ED.1977.18783. ISSN 0018-9383.
Chen, S. C.; Chang, T. C.; Liu, P. T.; Wu, Y. C.; Lin, P. S.; Tseng, B. H.; Shy, J. H.; Sze, S. M.; Chang, C. Y. (2007). "A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory". IEEE Electron Device Letters. 28 (9): 809–811. Bibcode:2007IEDL...28..809C. doi:10.1109/LED.2007.903885. ISSN 0741-3106.
Lee, M. C.; Wong, H. Y. (2013). "Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices". IEEE Transactions on Electron Devices. 60 (10): 3256–3264. Bibcode:2013ITED...60.3256L. doi:10.1109/TED.2013.2279410. ISSN 0018-9383.

سونوس (Persian Wikipedia)

books.google.com (Global: 3rd place; Persian: 6th place)

doi.org (Global: 2nd place; Persian: 2nd place)

harvard.edu (Global: 18th place; Persian: 50th place)