عایق‌بندی تاشه کم‌عمق (Persian Wikipedia)

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Jung, Jong-Wan; Kim, Jong-Min; Son, Jeong-Hwan; Lee, Youngjong (30 April 2000). "Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge". Japanese Journal of Applied Physics. 39 (Part 1, No. 4B): 2136–2140. Bibcode:2000JaJAP..39.2136J. doi:10.1143/JJAP.39.2136.
A. Chatterjee et al. , IEDM 1996.(conference announcement) Chatterjee, A.; Esquivel, J.; Nag, S.; Ali, I.; Rogers, D.; Taylor, K.; Joyner, K.; Mason, M.; Mercer, D. (1996), "A shallow trench isolation study for 0.25/0.18 μm CMOS technologies and beyond", 1996 Symposium on VLSI Technology. Digest of Technical Papers, pp. 156–157, doi:10.1109/VLSIT.1996.507831, ISBN 0-7803-3342-X
Pretet, J; Ioannou, D; Subba, N; Cristoloveanu, S; Maszara, W; Raynaud, C (November 2002). "Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs". Solid-State Electronics. 46 (11): 1699–1707. Bibcode:2002SSEle..46.1699P. doi:10.1016/S0038-1101(02)00147-8.
Lee, Yung-Huei; Linton, Tom; Wu, Ken; Mielke, Neal (May 2001). "Effect of trench edge on pMOSFET reliability". Microelectronics Reliability. 41 (5): 689–696. doi:10.1016/S0026-2714(01)00002-6.

Jung, Jong-Wan; Kim, Jong-Min; Son, Jeong-Hwan; Lee, Youngjong (30 April 2000). "Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge". Japanese Journal of Applied Physics. 39 (Part 1, No. 4B): 2136–2140. Bibcode:2000JaJAP..39.2136J. doi:10.1143/JJAP.39.2136.
Pretet, J; Ioannou, D; Subba, N; Cristoloveanu, S; Maszara, W; Raynaud, C (November 2002). "Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs". Solid-State Electronics. 46 (11): 1699–1707. Bibcode:2002SSEle..46.1699P. doi:10.1016/S0038-1101(02)00147-8.