مقیاس‌بندی دنارد (Persian Wikipedia)

Analysis of information sources in references of the Wikipedia article "مقیاس‌بندی دنارد" in Persian language version.

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Borkar, Shekhar; Chien, Andrew A. (May 2011). "The Future of Microprocessors". Communications of the ACM. 54 (5): 67. doi:10.1145/1941487.1941507. Retrieved 2011-11-27.

Dennard, Robert H.; Gaensslen, Fritz; Yu, Hwa-Nien; Rideout, Leo; Bassous, Ernest; LeBlanc, Andre (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions". IEEE Journal of Solid-State Circuits. SC-9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.Dennard, R.H.; Gaensslen, F.H.; Hwa-Nien Yu; Rideout, V.L.; Bassous, E.; Leblanc, A.R. (April 1999). "Classic Paper: Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions". Proceedings of the IEEE. 87 (4): 668–678. CiteSeerX 10.1.1.334.2417. doi:10.1109/JPROC.1999.752522. S2CID 62193402.
Borkar, Shekhar; Chien, Andrew A. (May 2011). "The Future of Microprocessors". Communications of the ACM. 54 (5): 67. doi:10.1145/1941487.1941507. Retrieved 2011-11-27.

Dennard, Robert H.; Gaensslen, Fritz; Yu, Hwa-Nien; Rideout, Leo; Bassous, Ernest; LeBlanc, Andre (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions". IEEE Journal of Solid-State Circuits. SC-9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.Dennard, R.H.; Gaensslen, F.H.; Hwa-Nien Yu; Rideout, V.L.; Bassous, E.; Leblanc, A.R. (April 1999). "Classic Paper: Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions". Proceedings of the IEEE. 87 (4): 668–678. CiteSeerX 10.1.1.334.2417. doi:10.1109/JPROC.1999.752522. S2CID 62193402.

Dennard, Robert H.; Gaensslen, Fritz; Yu, Hwa-Nien; Rideout, Leo; Bassous, Ernest; LeBlanc, Andre (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions". IEEE Journal of Solid-State Circuits. SC-9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.Dennard, R.H.; Gaensslen, F.H.; Hwa-Nien Yu; Rideout, V.L.; Bassous, E.; Leblanc, A.R. (April 1999). "Classic Paper: Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions". Proceedings of the IEEE. 87 (4): 668–678. CiteSeerX 10.1.1.334.2417. doi:10.1109/JPROC.1999.752522. S2CID 62193402.

Dennard, Robert H.; Gaensslen, Fritz; Yu, Hwa-Nien; Rideout, Leo; Bassous, Ernest; LeBlanc, Andre (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions". IEEE Journal of Solid-State Circuits. SC-9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.Dennard, R.H.; Gaensslen, F.H.; Hwa-Nien Yu; Rideout, V.L.; Bassous, E.; Leblanc, A.R. (April 1999). "Classic Paper: Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions". Proceedings of the IEEE. 87 (4): 668–678. CiteSeerX 10.1.1.334.2417. doi:10.1109/JPROC.1999.752522. S2CID 62193402.

Dennard, Robert H.; Gaensslen, Fritz; Yu, Hwa-Nien; Rideout, Leo; Bassous, Ernest; LeBlanc, Andre (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. SC-9.

Streetman, Ben G.; Banerjee, Sanjay Kumar (2016). Solid state electronic devices. Boston: Pearson. p. 341. ISBN 978-1-292-06055-2. OCLC 908999844.