Arséniure de gallium-indium (French Wikipedia)

Analysis of information sources in references of the Wikipedia article "Arséniure de gallium-indium" in French language version.

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19doi.org

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12issn.org

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6harvard.edu

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2sensorsinc.com

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1iupac.org

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1ecsdl.org

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1zenodo.org

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books.google.com

(en) T.P. Pearsall et M.A. Pollack, Photodiodes for Optical Fiber Communication, vol. 17, Academic Press, 3 juin 1985, 174–246 p. (ISBN 978-0-08-086417-4, lire en ligne)

doi.org

dx.doi.org

(en) T. Pearsall, « Ga_0.47In_0.53As: A ternary semiconductor for photodetector applications », IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), vol. 16, n^o 7,‎ 1980, p. 709–720 (ISSN 0018-9197, DOI 10.1109/jqe.1980.1070557)
(en) T. P. Pearsall et R. W. Hopson, « Growth and characterization of lattice‐matched epitaxial films of Ga_xIn_1−xAs/InP by liquid‐phase epitaxy », Journal of Applied Physics, AIP Publishing, vol. 48, n^o 10,‎ 1977, p. 4407–4409 (ISSN 0021-8979, DOI 10.1063/1.323399)
(en) T. P. Pearsall, R. Bisaro, R. Ansel et P. Merenda, « The growth of Ga_xIn_1−xAs on (100) InP by liquid‐phase epitaxy », Applied Physics Letters, AIP Publishing, vol. 32, n^o 8,‎ 15 avril 1978, p. 497–499 (ISSN 0003-6951, DOI 10.1063/1.90100)
(en) J.P. Hirtz, J.P. Larivain, J.P. Duchemin, T.P. Pearsall et M. Bonnet, « Growth of Ga_0.47In_0.53As on InP by low-pressure m.o. c.v.d. », Electronics Letters, Institution of Engineering and Technology (IET), vol. 16, n^o 11,‎ 1980, p. 415–416 (ISSN 0013-5194, DOI 10.1049/el:19800290)
(en) T. P. Pearsall, L. Eaves et J. C. Portal, « Photoluminescence and impurity concentration in GaxIn1−xAsyP1−y alloys lattice-matched to InP », Journal of Applied Physics, vol. 54, n^o 2,‎ 1983, p. 1037 (DOI 10.1063/1.332122, Bibcode 1983JAP....54.1037P)
(en) R. J. Nicholas, J. C. Portal, C. Houlbert, P. Perrier et T. P. Pearsall, « An experimental determination of the effective masses for Ga_xIn_1−xAs_yP_1−y alloys grown on InP », Applied Physics Letters, AIP Publishing, vol. 34, n^o 8,‎ 15 avril 1979, p. 492–494 (ISSN 0003-6951, DOI 10.1063/1.90860)
(en) Claudine Hermann et Thomas P. Pearsall, « Optical pumping and the valence‐band light‐hole effective mass in Ga_xIn_1−xAs_yP_1−y (y≃2.2x) », Applied Physics Letters, AIP Publishing, vol. 38, n^o 6,‎ 15 mars 1981, p. 450–452 (ISSN 0003-6951, DOI 10.1063/1.92393)
(en) T.P. Pearsall et J.P. Hirtz, « The carrier mobilities in Ga_0.47In_0.53 as grown by organo-mettalic CVD and liquid-phase epitaxy », Journal of Crystal Growth, Elsevier BV, vol. 54, n^o 1,‎ 1981, p. 127–131 (ISSN 0022-0248, DOI 10.1016/0022-0248(81)90258-x)
(en) R. Bisaro, P. Merenda et T. P. Pearsall, « The thermal‐expansion parameters of some Ga_xIn_1−xAs_yP_1−x alloys », Applied Physics Letters, AIP Publishing, vol. 34, n^o 1,‎ 1979, p. 100–102 (ISSN 0003-6951, DOI 10.1063/1.90575)
(en) S. Y. Lin, « Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs », Applied Physics Letters, vol. 55, n^o 7,‎ 1989, p. 666–668 (DOI 10.1063/1.101816, Bibcode 1989ApPhL..55..666L, lire en ligne)
(en) Katsuhiko Nishida, « InGaAsP heterostructure avalanche photodiodes with high avalanche gain », Applied Physics Letters, vol. 35, n^o 3,‎ 1979, p. 251–253 (DOI 10.1063/1.91089, Bibcode 1979ApPhL..35..251N)
(en) T. Pearsall, « A Ga_0.47In_0.53As/InP heterophotodiode with reduced dark current », IEEE Journal of Quantum Electronics, vol. 17, n^o 2,‎ 1981, p. 255–259 (DOI 10.1109/JQE.1981.1071057, Bibcode 1981IJQE...17..255P)
(en) T.P. Pearsall, R.A. Logan et C.G. Bethea, « GaInAs/InP large bandwidth (> 2 GHz) PIN detectors », Electronics Letters, Institution of Engineering and Technology (IET), vol. 19, n^o 16,‎ 1983, p. 611–612 (ISSN 0013-5194, DOI 10.1049/el:19830416)
(en) N. Shimizu, « InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz », IEEE Photonics Technology Letters, vol. 10, n^o 3,‎ 1998, p. 412–414 (DOI 10.1109/68.661427, Bibcode 1998IPTL...10..412S)
(en) Y. G. Wey, D. L. Crawford, K. Giboney, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich et G. Y. Robinson, « Ultrafast graded double‐heterostructure GaInAs/InP photodiode », Applied Physics Letters, AIP Publishing, vol. 58, n^o 19,‎ 13 mai 1991, p. 2156–2158 (ISSN 0003-6951, DOI 10.1063/1.104991)
(en) J.L. Veteran, « Schottky barrier measurements on p-type In_0.53Ga_0.47As », Thin Solid Films, vol. 97, n^o 2,‎ 1982, p. 187–190 (DOI 10.1016/0040-6090(82)90227-9, Bibcode 1982TSF....97..187V)
(en) D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop'ev et V.M. Ustinov, « InGaAs-GaAs quantum-dot lasers », IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), vol. 3, n^o 2,‎ 1997, p. 196–205 (ISSN 1077-260X, DOI 10.1109/2944.605656)
(en) J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson et A. Y. Cho, « Quantum Cascade Laser », Science, American Association for the Advancement of Science (AAAS), vol. 264, n^o 5158,‎ 22 avril 1994, p. 553–556 (ISSN 0036-8075, DOI 10.1126/science.264.5158.553)

doi.org

Y. Takeda, A. Sasaki, Y. Imamura, and T. Takagi, "Electron mobility and energy gap of In_0.53Ga_0.47As on InP substrate", J. of Appl. Physics 47, 5405-7 (1976); https://doi.org/10.1063/1.322570

ecsdl.org

jes.ecsdl.org

(en) John W. Wagner, « Preparation and Properties of Bulk In1 − x Ga x As Alloys : SOLID STATE SCIENCE - Technical Papers », Jes.ecsdl.org (consulté le 2 décembre 2013)

harvard.edu

ui.adsabs.harvard.edu

(en) T. P. Pearsall, L. Eaves et J. C. Portal, « Photoluminescence and impurity concentration in GaxIn1−xAsyP1−y alloys lattice-matched to InP », Journal of Applied Physics, vol. 54, n^o 2,‎ 1983, p. 1037 (DOI 10.1063/1.332122, Bibcode 1983JAP....54.1037P)
(en) S. Y. Lin, « Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs », Applied Physics Letters, vol. 55, n^o 7,‎ 1989, p. 666–668 (DOI 10.1063/1.101816, Bibcode 1989ApPhL..55..666L, lire en ligne)
(en) Katsuhiko Nishida, « InGaAsP heterostructure avalanche photodiodes with high avalanche gain », Applied Physics Letters, vol. 35, n^o 3,‎ 1979, p. 251–253 (DOI 10.1063/1.91089, Bibcode 1979ApPhL..35..251N)
(en) T. Pearsall, « A Ga_0.47In_0.53As/InP heterophotodiode with reduced dark current », IEEE Journal of Quantum Electronics, vol. 17, n^o 2,‎ 1981, p. 255–259 (DOI 10.1109/JQE.1981.1071057, Bibcode 1981IJQE...17..255P)
(en) N. Shimizu, « InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz », IEEE Photonics Technology Letters, vol. 10, n^o 3,‎ 1998, p. 412–414 (DOI 10.1109/68.661427, Bibcode 1998IPTL...10..412S)
(en) J.L. Veteran, « Schottky barrier measurements on p-type In_0.53Ga_0.47As », Thin Solid Films, vol. 97, n^o 2,‎ 1982, p. 187–190 (DOI 10.1016/0040-6090(82)90227-9, Bibcode 1982TSF....97..187V)

issn.org

portal.issn.org

(en) T. Pearsall, « Ga_0.47In_0.53As: A ternary semiconductor for photodetector applications », IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), vol. 16, n^o 7,‎ 1980, p. 709–720 (ISSN 0018-9197, DOI 10.1109/jqe.1980.1070557)
(en) T. P. Pearsall et R. W. Hopson, « Growth and characterization of lattice‐matched epitaxial films of Ga_xIn_1−xAs/InP by liquid‐phase epitaxy », Journal of Applied Physics, AIP Publishing, vol. 48, n^o 10,‎ 1977, p. 4407–4409 (ISSN 0021-8979, DOI 10.1063/1.323399)
(en) T. P. Pearsall, R. Bisaro, R. Ansel et P. Merenda, « The growth of Ga_xIn_1−xAs on (100) InP by liquid‐phase epitaxy », Applied Physics Letters, AIP Publishing, vol. 32, n^o 8,‎ 15 avril 1978, p. 497–499 (ISSN 0003-6951, DOI 10.1063/1.90100)
(en) J.P. Hirtz, J.P. Larivain, J.P. Duchemin, T.P. Pearsall et M. Bonnet, « Growth of Ga_0.47In_0.53As on InP by low-pressure m.o. c.v.d. », Electronics Letters, Institution of Engineering and Technology (IET), vol. 16, n^o 11,‎ 1980, p. 415–416 (ISSN 0013-5194, DOI 10.1049/el:19800290)
(en) R. J. Nicholas, J. C. Portal, C. Houlbert, P. Perrier et T. P. Pearsall, « An experimental determination of the effective masses for Ga_xIn_1−xAs_yP_1−y alloys grown on InP », Applied Physics Letters, AIP Publishing, vol. 34, n^o 8,‎ 15 avril 1979, p. 492–494 (ISSN 0003-6951, DOI 10.1063/1.90860)
(en) Claudine Hermann et Thomas P. Pearsall, « Optical pumping and the valence‐band light‐hole effective mass in Ga_xIn_1−xAs_yP_1−y (y≃2.2x) », Applied Physics Letters, AIP Publishing, vol. 38, n^o 6,‎ 15 mars 1981, p. 450–452 (ISSN 0003-6951, DOI 10.1063/1.92393)
(en) T.P. Pearsall et J.P. Hirtz, « The carrier mobilities in Ga_0.47In_0.53 as grown by organo-mettalic CVD and liquid-phase epitaxy », Journal of Crystal Growth, Elsevier BV, vol. 54, n^o 1,‎ 1981, p. 127–131 (ISSN 0022-0248, DOI 10.1016/0022-0248(81)90258-x)
(en) R. Bisaro, P. Merenda et T. P. Pearsall, « The thermal‐expansion parameters of some Ga_xIn_1−xAs_yP_1−x alloys », Applied Physics Letters, AIP Publishing, vol. 34, n^o 1,‎ 1979, p. 100–102 (ISSN 0003-6951, DOI 10.1063/1.90575)
(en) T.P. Pearsall, R.A. Logan et C.G. Bethea, « GaInAs/InP large bandwidth (> 2 GHz) PIN detectors », Electronics Letters, Institution of Engineering and Technology (IET), vol. 19, n^o 16,‎ 1983, p. 611–612 (ISSN 0013-5194, DOI 10.1049/el:19830416)
(en) Y. G. Wey, D. L. Crawford, K. Giboney, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich et G. Y. Robinson, « Ultrafast graded double‐heterostructure GaInAs/InP photodiode », Applied Physics Letters, AIP Publishing, vol. 58, n^o 19,‎ 13 mai 1991, p. 2156–2158 (ISSN 0003-6951, DOI 10.1063/1.104991)
(en) D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop'ev et V.M. Ustinov, « InGaAs-GaAs quantum-dot lasers », IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), vol. 3, n^o 2,‎ 1997, p. 196–205 (ISSN 1077-260X, DOI 10.1109/2944.605656)
(en) J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson et A. Y. Cho, « Quantum Cascade Laser », Science, American Association for the Advancement of Science (AAAS), vol. 264, n^o 5158,‎ 22 avril 1994, p. 553–556 (ISSN 0036-8075, DOI 10.1126/science.264.5158.553)

iupac.org

(en) « International Union of Pure and Applied Chemistry: Home », IUPAC (consulté le 22 septembre 2013)

sensorsinc.com

(en) « Technology: What is InGaAs? », Sensorsinc.com (consulté le 2 décembre 2013)
(en) « Sensors Unlimited - InGaAs Near and Short Wave Infrared (SWIR) Cameras, Arrays, and Photodiodes », Sensorsinc.com (consulté le 22 septembre 2013)

zenodo.org

(en) S. Y. Lin, « Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs », Applied Physics Letters, vol. 55, n^o 7,‎ 1989, p. 666–668 (DOI 10.1063/1.101816, Bibcode 1989ApPhL..55..666L, lire en ligne)