(en) T.P. Pearsall et M.A. Pollack, Photodiodes for Optical Fiber Communication, vol. 17, Academic Press, , 174–246 p. (ISBN978-0-08-086417-4, lire en ligne)
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(en) T. Pearsall, « Ga0.47In0.53As: A ternary semiconductor for photodetector applications », IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), vol. 16, no 7, , p. 709–720 (ISSN0018-9197, DOI10.1109/jqe.1980.1070557)
(en) T. P. Pearsall et R. W. Hopson, « Growth and characterization of lattice‐matched epitaxial films of GaxIn1−xAs/InP by liquid‐phase epitaxy », Journal of Applied Physics, AIP Publishing, vol. 48, no 10, , p. 4407–4409 (ISSN0021-8979, DOI10.1063/1.323399)
(en) T. P. Pearsall, R. Bisaro, R. Ansel et P. Merenda, « The growth of GaxIn1−xAs on (100) InP by liquid‐phase epitaxy », Applied Physics Letters, AIP Publishing, vol. 32, no 8, , p. 497–499 (ISSN0003-6951, DOI10.1063/1.90100)
(en) J.P. Hirtz, J.P. Larivain, J.P. Duchemin, T.P. Pearsall et M. Bonnet, « Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d. », Electronics Letters, Institution of Engineering and Technology (IET), vol. 16, no 11, , p. 415–416 (ISSN0013-5194, DOI10.1049/el:19800290)
(en) T. P. Pearsall, L. Eaves et J. C. Portal, « Photoluminescence and impurity concentration in GaxIn1−xAsyP1−y alloys lattice-matched to InP », Journal of Applied Physics, vol. 54, no 2, , p. 1037 (DOI10.1063/1.332122, Bibcode1983JAP....54.1037P)
(en) R. J. Nicholas, J. C. Portal, C. Houlbert, P. Perrier et T. P. Pearsall, « An experimental determination of the effective masses for GaxIn1−xAsyP1−y alloys grown on InP », Applied Physics Letters, AIP Publishing, vol. 34, no 8, , p. 492–494 (ISSN0003-6951, DOI10.1063/1.90860)
(en) Claudine Hermann et Thomas P. Pearsall, « Optical pumping and the valence‐band light‐hole effective mass in GaxIn1−xAsyP1−y (y≃2.2x) », Applied Physics Letters, AIP Publishing, vol. 38, no 6, , p. 450–452 (ISSN0003-6951, DOI10.1063/1.92393)
(en) T.P. Pearsall et J.P. Hirtz, « The carrier mobilities in Ga0.47In0.53 as grown by organo-mettalic CVD and liquid-phase epitaxy », Journal of Crystal Growth, Elsevier BV, vol. 54, no 1, , p. 127–131 (ISSN0022-0248, DOI10.1016/0022-0248(81)90258-x)
(en) R. Bisaro, P. Merenda et T. P. Pearsall, « The thermal‐expansion parameters of some GaxIn1−xAsyP1−x alloys », Applied Physics Letters, AIP Publishing, vol. 34, no 1, , p. 100–102 (ISSN0003-6951, DOI10.1063/1.90575)
(en) S. Y. Lin, « Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs », Applied Physics Letters, vol. 55, no 7, , p. 666–668 (DOI10.1063/1.101816, Bibcode1989ApPhL..55..666L, lire en ligne)
(en) Katsuhiko Nishida, « InGaAsP heterostructure avalanche photodiodes with high avalanche gain », Applied Physics Letters, vol. 35, no 3, , p. 251–253 (DOI10.1063/1.91089, Bibcode1979ApPhL..35..251N)
(en) T.P. Pearsall, R.A. Logan et C.G. Bethea, « GaInAs/InP large bandwidth (> 2 GHz) PIN detectors », Electronics Letters, Institution of Engineering and Technology (IET), vol. 19, no 16, , p. 611–612 (ISSN0013-5194, DOI10.1049/el:19830416)
(en) N. Shimizu, « InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz », IEEE Photonics Technology Letters, vol. 10, no 3, , p. 412–414 (DOI10.1109/68.661427, Bibcode1998IPTL...10..412S)
(en) Y. G. Wey, D. L. Crawford, K. Giboney, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich et G. Y. Robinson, « Ultrafast graded double‐heterostructure GaInAs/InP photodiode », Applied Physics Letters, AIP Publishing, vol. 58, no 19, , p. 2156–2158 (ISSN0003-6951, DOI10.1063/1.104991)
(en) D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop'ev et V.M. Ustinov, « InGaAs-GaAs quantum-dot lasers », IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), vol. 3, no 2, , p. 196–205 (ISSN1077-260X, DOI10.1109/2944.605656)
(en) J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson et A. Y. Cho, « Quantum Cascade Laser », Science, American Association for the Advancement of Science (AAAS), vol. 264, no 5158, , p. 553–556 (ISSN0036-8075, DOI10.1126/science.264.5158.553)
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(en) T. P. Pearsall, L. Eaves et J. C. Portal, « Photoluminescence and impurity concentration in GaxIn1−xAsyP1−y alloys lattice-matched to InP », Journal of Applied Physics, vol. 54, no 2, , p. 1037 (DOI10.1063/1.332122, Bibcode1983JAP....54.1037P)
(en) S. Y. Lin, « Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs », Applied Physics Letters, vol. 55, no 7, , p. 666–668 (DOI10.1063/1.101816, Bibcode1989ApPhL..55..666L, lire en ligne)
(en) Katsuhiko Nishida, « InGaAsP heterostructure avalanche photodiodes with high avalanche gain », Applied Physics Letters, vol. 35, no 3, , p. 251–253 (DOI10.1063/1.91089, Bibcode1979ApPhL..35..251N)
(en) N. Shimizu, « InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz », IEEE Photonics Technology Letters, vol. 10, no 3, , p. 412–414 (DOI10.1109/68.661427, Bibcode1998IPTL...10..412S)
(en) T. Pearsall, « Ga0.47In0.53As: A ternary semiconductor for photodetector applications », IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), vol. 16, no 7, , p. 709–720 (ISSN0018-9197, DOI10.1109/jqe.1980.1070557)
(en) T. P. Pearsall et R. W. Hopson, « Growth and characterization of lattice‐matched epitaxial films of GaxIn1−xAs/InP by liquid‐phase epitaxy », Journal of Applied Physics, AIP Publishing, vol. 48, no 10, , p. 4407–4409 (ISSN0021-8979, DOI10.1063/1.323399)
(en) T. P. Pearsall, R. Bisaro, R. Ansel et P. Merenda, « The growth of GaxIn1−xAs on (100) InP by liquid‐phase epitaxy », Applied Physics Letters, AIP Publishing, vol. 32, no 8, , p. 497–499 (ISSN0003-6951, DOI10.1063/1.90100)
(en) J.P. Hirtz, J.P. Larivain, J.P. Duchemin, T.P. Pearsall et M. Bonnet, « Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d. », Electronics Letters, Institution of Engineering and Technology (IET), vol. 16, no 11, , p. 415–416 (ISSN0013-5194, DOI10.1049/el:19800290)
(en) R. J. Nicholas, J. C. Portal, C. Houlbert, P. Perrier et T. P. Pearsall, « An experimental determination of the effective masses for GaxIn1−xAsyP1−y alloys grown on InP », Applied Physics Letters, AIP Publishing, vol. 34, no 8, , p. 492–494 (ISSN0003-6951, DOI10.1063/1.90860)
(en) Claudine Hermann et Thomas P. Pearsall, « Optical pumping and the valence‐band light‐hole effective mass in GaxIn1−xAsyP1−y (y≃2.2x) », Applied Physics Letters, AIP Publishing, vol. 38, no 6, , p. 450–452 (ISSN0003-6951, DOI10.1063/1.92393)
(en) T.P. Pearsall et J.P. Hirtz, « The carrier mobilities in Ga0.47In0.53 as grown by organo-mettalic CVD and liquid-phase epitaxy », Journal of Crystal Growth, Elsevier BV, vol. 54, no 1, , p. 127–131 (ISSN0022-0248, DOI10.1016/0022-0248(81)90258-x)
(en) R. Bisaro, P. Merenda et T. P. Pearsall, « The thermal‐expansion parameters of some GaxIn1−xAsyP1−x alloys », Applied Physics Letters, AIP Publishing, vol. 34, no 1, , p. 100–102 (ISSN0003-6951, DOI10.1063/1.90575)
(en) T.P. Pearsall, R.A. Logan et C.G. Bethea, « GaInAs/InP large bandwidth (> 2 GHz) PIN detectors », Electronics Letters, Institution of Engineering and Technology (IET), vol. 19, no 16, , p. 611–612 (ISSN0013-5194, DOI10.1049/el:19830416)
(en) Y. G. Wey, D. L. Crawford, K. Giboney, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich et G. Y. Robinson, « Ultrafast graded double‐heterostructure GaInAs/InP photodiode », Applied Physics Letters, AIP Publishing, vol. 58, no 19, , p. 2156–2158 (ISSN0003-6951, DOI10.1063/1.104991)
(en) D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop'ev et V.M. Ustinov, « InGaAs-GaAs quantum-dot lasers », IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), vol. 3, no 2, , p. 196–205 (ISSN1077-260X, DOI10.1109/2944.605656)
(en) J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson et A. Y. Cho, « Quantum Cascade Laser », Science, American Association for the Advancement of Science (AAAS), vol. 264, no 5158, , p. 553–556 (ISSN0036-8075, DOI10.1126/science.264.5158.553)
(en) S. Y. Lin, « Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs », Applied Physics Letters, vol. 55, no 7, , p. 666–668 (DOI10.1063/1.101816, Bibcode1989ApPhL..55..666L, lire en ligne)