(en) Eric R. Fossum et D. B. Hondongwa, « A Review of the Pinned Photodiode for CCD and CMOS Image Sensors », IEEE Journal of the Electron Devices Society, vol. 2, no 3, , p. 33–43 (DOI10.1109/JEDS.2014.2306412)
(en) L. J. Kozlowski, J. Luo, W. E. Kleinhans et T. Liu, « Comparison of passive and active pixel schemes for CMOS visible imagers », Infrared Readout Electronics IV, vol. 3360, , p. 101–110 (DOI10.1117/12.584474, Bibcode1998SPIE.3360..101K, S2CID123351913)
(en) Peter J. W. Noble, « Self-Scanned Silicon Image Detector Arrays », IEEE Transactions on Electron Devices, IEEE, vol. ED-15, no 4, , p. 202–209 (DOI10.1109/T-ED.1968.16167, Bibcode1968ITED...15..202N) (Noble reçut ensuite un prix pour ses 'Seminal contributions to the early years of image sensors' par la International Image sensor Society en 2015).
(en) Savvas G. Chamberlain, « Photosensitivity and Scanning of Silicon Image Detector Arrays », IEEE Journal of Solid-State Circuits, vol. SC-4, no 6, , p. 333–342 (DOI10.1109/JSSC.1969.1050032, Bibcode1969IJSSC...4..333C)
(en) R. Dyck et G. Weckler, « Integrated arrays of silicon photodetectors for image sensing », IEEE Trans. Electron Devices, vol. ED-15, no 4, , p. 196–201 (DOI10.1109/T-ED.1968.16166, Bibcode1968ITED...15..196D)
(en) Eric R. Fossum, « Camera-On-A-Chip: Technology Transfer from Saturn to Your Cell Phone », Technology & Innovation, vol. 15, no 3, , p. 197–209 (DOI10.3727/194982413X13790020921744)
(en) Kazuya Matsumoto, Tsutomu Nakamura, Atsushi Yusa et Shohei Nagai, « A new MOS phototransistor operating in a non-destructive readout mode », Japanese Journal of Applied Physics, vol. 24, no 5A, , p. L323 (DOI10.1143/JJAP.24.L323, Bibcode1985JaJAP..24L.323M, S2CID108450116)
(en) L. J. Kozlowski, J. Luo, W. E. Kleinhans et T. Liu, « Comparison of passive and active pixel schemes for CMOS visible imagers », Infrared Readout Electronics IV, vol. 3360, , p. 101–110 (DOI10.1117/12.584474, Bibcode1998SPIE.3360..101K, S2CID123351913)
(en) Peter J. W. Noble, « Self-Scanned Silicon Image Detector Arrays », IEEE Transactions on Electron Devices, IEEE, vol. ED-15, no 4, , p. 202–209 (DOI10.1109/T-ED.1968.16167, Bibcode1968ITED...15..202N) (Noble reçut ensuite un prix pour ses 'Seminal contributions to the early years of image sensors' par la International Image sensor Society en 2015).
(en) Savvas G. Chamberlain, « Photosensitivity and Scanning of Silicon Image Detector Arrays », IEEE Journal of Solid-State Circuits, vol. SC-4, no 6, , p. 333–342 (DOI10.1109/JSSC.1969.1050032, Bibcode1969IJSSC...4..333C)
(en) R. Dyck et G. Weckler, « Integrated arrays of silicon photodetectors for image sensing », IEEE Trans. Electron Devices, vol. ED-15, no 4, , p. 196–201 (DOI10.1109/T-ED.1968.16166, Bibcode1968ITED...15..196D)
(en) Kazuya Matsumoto, Tsutomu Nakamura, Atsushi Yusa et Shohei Nagai, « A new MOS phototransistor operating in a non-destructive readout mode », Japanese Journal of Applied Physics, vol. 24, no 5A, , p. L323 (DOI10.1143/JJAP.24.L323, Bibcode1985JaJAP..24L.323M, S2CID108450116)
(en) L. J. Kozlowski, J. Luo, W. E. Kleinhans et T. Liu, « Comparison of passive and active pixel schemes for CMOS visible imagers », Infrared Readout Electronics IV, vol. 3360, , p. 101–110 (DOI10.1117/12.584474, Bibcode1998SPIE.3360..101K, S2CID123351913)
(en) Kazuya Matsumoto, Tsutomu Nakamura, Atsushi Yusa et Shohei Nagai, « A new MOS phototransistor operating in a non-destructive readout mode », Japanese Journal of Applied Physics, vol. 24, no 5A, , p. L323 (DOI10.1143/JJAP.24.L323, Bibcode1985JaJAP..24L.323M, S2CID108450116)