(en) Yuqiang Ma, Bilu Liu, Anyi Zhang, Liang Chen, Mohammad Fathi, Chenfei Shen, Ahmad N. Abbas, Mingyuan Ge, Matthew Mecklenburg et Chongwu Zhou, « Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices », ACS Nano, vol. 9, no 7, , p. 7383-7391 (PMID26125321, DOI10.1021/acsnano.5b02399, lire en ligne)
(en) Hai Li, Jumiati Wu, Zongyou Yin et Hua Zhang, « Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets », Accounts of Chemical Research, vol. 47, no 4, , p. 1067-1075 (PMID24697842, DOI10.1021/ar4002312, lire en ligne)
(en) Xin Zhang, Xiao-Fen Qiao, Wei Shi, Jiang-Bin Wu, De-Sheng Jiang et Ping-Heng Tan, « Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material », Chemical Society Reviews, vol. 44, no 9, , p. 2757-2785 (PMID25679474, DOI10.1039/c4cs00282b, Bibcode2015arXiv150200701Z, arXiv1502.00701, lire en ligne)
doi.org
dx.doi.org
(en) M. K. Agarwal et P. A. Wani, « Growth conditions and crystal structure parameters of layer compounds in the series Mo1−xWxSe2 », Materials Research Bulletin, vol. 14, no 6, , p. 825-830 (DOI10.1016/0025-5408(79)90144-2, lire en ligne)
(en) Yuqiang Ma, Bilu Liu, Anyi Zhang, Liang Chen, Mohammad Fathi, Chenfei Shen, Ahmad N. Abbas, Mingyuan Ge, Matthew Mecklenburg et Chongwu Zhou, « Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices », ACS Nano, vol. 9, no 7, , p. 7383-7391 (PMID26125321, DOI10.1021/acsnano.5b02399, lire en ligne)
(en) Ali Eftekhari, « Tungsten dichalcogenides (WS2, WSe2, and WTe2): materials chemistry and applications », Journal of Materials Chemistry A, vol. 5, no 35, , p. 18299-18325 (DOI10.1039/c7ta04268j, lire en ligne)
(en) L. C. Upadhyayula, J. J. Loferski, A. Wold, W. Giriat et R. Kershaw, « Semiconducting Properties of Single Crystals of n‐ and p‐Type Tungsten Diselenide (WSe2) », Journal of Applied Physics, vol. 39, no 10, , p. 4736-4740 (DOI10.1063/1.1655829, Bibcode1968JAP....39.4736U, lire en ligne)
(en) J. Gobrecht, H. Gerischer et H. Tributsch, « Electrochemical Solar Cell Based on the d‐Band Semiconductor Tungsten‐Diselenide », Berichte der Bunsengesellschaft für physikalische Chemie, vol. 82, no 12, , p. 1331-1335 (DOI10.1002/bbpc.19780821212, lire en ligne)
(en) Xin Zhang, Xiao-Fen Qiao, Wei Shi, Jiang-Bin Wu, De-Sheng Jiang et Ping-Heng Tan, « Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material », Chemical Society Reviews, vol. 44, no 9, , p. 2757-2785 (PMID25679474, DOI10.1039/c4cs00282b, Bibcode2015arXiv150200701Z, arXiv1502.00701, lire en ligne)
(en) Hai Li, Jumiati Wu, Zongyou Yin et Hua Zhang, « Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets », Accounts of Chemical Research, vol. 47, no 4, , p. 1067-1075 (PMID24697842, DOI10.1021/ar4002312, lire en ligne)
(en) Sung-Joon Lee, Zhaoyang Lin, Jin Huang, Christopher S. Choi, Peng Chen, Yuan Liu, Jian Guo, Chuancheng Jia, Yiliu Wang, Laiyuan Wang, Qingliang Liao, Imran Shakir, Xidong Duan, Bruce Dunn, Yue Zhang, Yu Huang et Xiangfeng Duan, « Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide », Nature Electronics, vol. 3, , p. 630-637 (DOI10.1038/s41928-020-00472-x, lire en ligne)
(en) Yung-Chang Lin, Torbjörn Björkman, Hannu-Pekka Komsa, Po-Yuan Teng, Chao-Hui Yeh, Fei-Sheng Huang, Kuan-Hung Lin, Joanna Jadczak, Ying-Sheng Huang, Po-Wen Chiu, Arkady V. Krasheninnikov et Kazu Suenaga, « Three-fold rotational defects in two-dimensional transition metal dichalcogenides », Nature Communications, vol. 6, , article no 6736 (PMID25832503, PMCID4396367, DOI10.1038/ncomms7736, Bibcode2015NatCo...6.6736L, lire en ligne)
(en) Catalin Chiritescu, David G. Cahill, Ngoc Nguyen, David Johnson, Arun Bodapati, Pawel Keblinski et Paul Zschack, « Ultralow Thermal Conductivity in Disordered, Layered WSe2 Crystals », Science, vol. 315, no 5810, , p. 351-353 (PMID17170252, DOI10.1126/science.1136494, Bibcode2007Sci...315..351C, lire en ligne)
(en) L. C. Upadhyayula, J. J. Loferski, A. Wold, W. Giriat et R. Kershaw, « Semiconducting Properties of Single Crystals of n‐ and p‐Type Tungsten Diselenide (WSe2) », Journal of Applied Physics, vol. 39, no 10, , p. 4736-4740 (DOI10.1063/1.1655829, Bibcode1968JAP....39.4736U, lire en ligne)
(en) Xin Zhang, Xiao-Fen Qiao, Wei Shi, Jiang-Bin Wu, De-Sheng Jiang et Ping-Heng Tan, « Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material », Chemical Society Reviews, vol. 44, no 9, , p. 2757-2785 (PMID25679474, DOI10.1039/c4cs00282b, Bibcode2015arXiv150200701Z, arXiv1502.00701, lire en ligne)
(en) Yung-Chang Lin, Torbjörn Björkman, Hannu-Pekka Komsa, Po-Yuan Teng, Chao-Hui Yeh, Fei-Sheng Huang, Kuan-Hung Lin, Joanna Jadczak, Ying-Sheng Huang, Po-Wen Chiu, Arkady V. Krasheninnikov et Kazu Suenaga, « Three-fold rotational defects in two-dimensional transition metal dichalcogenides », Nature Communications, vol. 6, , article no 6736 (PMID25832503, PMCID4396367, DOI10.1038/ncomms7736, Bibcode2015NatCo...6.6736L, lire en ligne)
(en) Catalin Chiritescu, David G. Cahill, Ngoc Nguyen, David Johnson, Arun Bodapati, Pawel Keblinski et Paul Zschack, « Ultralow Thermal Conductivity in Disordered, Layered WSe2 Crystals », Science, vol. 315, no 5810, , p. 351-353 (PMID17170252, DOI10.1126/science.1136494, Bibcode2007Sci...315..351C, lire en ligne)
(en) Sung-Joon Lee, Zhaoyang Lin, Jin Huang, Christopher S. Choi, Peng Chen, Yuan Liu, Jian Guo, Chuancheng Jia, Yiliu Wang, Laiyuan Wang, Qingliang Liao, Imran Shakir, Xidong Duan, Bruce Dunn, Yue Zhang, Yu Huang et Xiangfeng Duan, « Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide », Nature Electronics, vol. 3, , p. 630-637 (DOI10.1038/s41928-020-00472-x, lire en ligne)
nih.gov
ncbi.nlm.nih.gov
(en) Yuqiang Ma, Bilu Liu, Anyi Zhang, Liang Chen, Mohammad Fathi, Chenfei Shen, Ahmad N. Abbas, Mingyuan Ge, Matthew Mecklenburg et Chongwu Zhou, « Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices », ACS Nano, vol. 9, no 7, , p. 7383-7391 (PMID26125321, DOI10.1021/acsnano.5b02399, lire en ligne)
(en) Xin Zhang, Xiao-Fen Qiao, Wei Shi, Jiang-Bin Wu, De-Sheng Jiang et Ping-Heng Tan, « Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material », Chemical Society Reviews, vol. 44, no 9, , p. 2757-2785 (PMID25679474, DOI10.1039/c4cs00282b, Bibcode2015arXiv150200701Z, arXiv1502.00701, lire en ligne)
(en) Hai Li, Jumiati Wu, Zongyou Yin et Hua Zhang, « Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets », Accounts of Chemical Research, vol. 47, no 4, , p. 1067-1075 (PMID24697842, DOI10.1021/ar4002312, lire en ligne)
(en) Yung-Chang Lin, Torbjörn Björkman, Hannu-Pekka Komsa, Po-Yuan Teng, Chao-Hui Yeh, Fei-Sheng Huang, Kuan-Hung Lin, Joanna Jadczak, Ying-Sheng Huang, Po-Wen Chiu, Arkady V. Krasheninnikov et Kazu Suenaga, « Three-fold rotational defects in two-dimensional transition metal dichalcogenides », Nature Communications, vol. 6, , article no 6736 (PMID25832503, PMCID4396367, DOI10.1038/ncomms7736, Bibcode2015NatCo...6.6736L, lire en ligne)
(en) Catalin Chiritescu, David G. Cahill, Ngoc Nguyen, David Johnson, Arun Bodapati, Pawel Keblinski et Paul Zschack, « Ultralow Thermal Conductivity in Disordered, Layered WSe2 Crystals », Science, vol. 315, no 5810, , p. 351-353 (PMID17170252, DOI10.1126/science.1136494, Bibcode2007Sci...315..351C, lire en ligne)
(en) Yung-Chang Lin, Torbjörn Björkman, Hannu-Pekka Komsa, Po-Yuan Teng, Chao-Hui Yeh, Fei-Sheng Huang, Kuan-Hung Lin, Joanna Jadczak, Ying-Sheng Huang, Po-Wen Chiu, Arkady V. Krasheninnikov et Kazu Suenaga, « Three-fold rotational defects in two-dimensional transition metal dichalcogenides », Nature Communications, vol. 6, , article no 6736 (PMID25832503, PMCID4396367, DOI10.1038/ncomms7736, Bibcode2015NatCo...6.6736L, lire en ligne)
(en) Catalin Chiritescu, David G. Cahill, Ngoc Nguyen, David Johnson, Arun Bodapati, Pawel Keblinski et Paul Zschack, « Ultralow Thermal Conductivity in Disordered, Layered WSe2 Crystals », Science, vol. 315, no 5810, , p. 351-353 (PMID17170252, DOI10.1126/science.1136494, Bibcode2007Sci...315..351C, lire en ligne)
rsc.org
pubs.rsc.org
(en) Ali Eftekhari, « Tungsten dichalcogenides (WS2, WSe2, and WTe2): materials chemistry and applications », Journal of Materials Chemistry A, vol. 5, no 35, , p. 18299-18325 (DOI10.1039/c7ta04268j, lire en ligne)
(en) Xin Zhang, Xiao-Fen Qiao, Wei Shi, Jiang-Bin Wu, De-Sheng Jiang et Ping-Heng Tan, « Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material », Chemical Society Reviews, vol. 44, no 9, , p. 2757-2785 (PMID25679474, DOI10.1039/c4cs00282b, Bibcode2015arXiv150200701Z, arXiv1502.00701, lire en ligne)
sciencedirect.com
(en) M. K. Agarwal et P. A. Wani, « Growth conditions and crystal structure parameters of layer compounds in the series Mo1−xWxSe2 », Materials Research Bulletin, vol. 14, no 6, , p. 825-830 (DOI10.1016/0025-5408(79)90144-2, lire en ligne)
(en) L. C. Upadhyayula, J. J. Loferski, A. Wold, W. Giriat et R. Kershaw, « Semiconducting Properties of Single Crystals of n‐ and p‐Type Tungsten Diselenide (WSe2) », Journal of Applied Physics, vol. 39, no 10, , p. 4736-4740 (DOI10.1063/1.1655829, Bibcode1968JAP....39.4736U, lire en ligne)
wiley.com
onlinelibrary.wiley.com
(en) J. Gobrecht, H. Gerischer et H. Tributsch, « Electrochemical Solar Cell Based on the d‐Band Semiconductor Tungsten‐Diselenide », Berichte der Bunsengesellschaft für physikalische Chemie, vol. 82, no 12, , p. 1331-1335 (DOI10.1002/bbpc.19780821212, lire en ligne)