References analysis of the Wikipedia article "Lanying Lin" in the French version

doi.org (Global: 2^nd place; French: 3^rd place)

dx.doi.org

Chen, He, Wang et Pan, « Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching », Journal of Crystal Growth, vol. 167, n^os 3–4,‎ 1^er octobre 1996, p. 766–768 (DOI 10.1016/0022-0248(96)00462-9, Bibcode 1996JCrGr.167..766C)

Chen, He, Wang et Lin, « Stoichiometric defects in semi-insulating GaAs », Journal of Crystal Growth, vol. 173, n^os 3–4,‎ 1^er avril 1997, p. 325–329 (DOI 10.1016/S0022-0248(96)00823-8, Bibcode 1997JCrGr.173..325C)

Yang, Cheng, Wang et Liang, « Interface roughness scattering in GaAs–AlGaAs modulation‐doped heterostructures », Applied Physics Letters, vol. 65, n^o 26,‎ 26 décembre 1994, p. 3329–3331 (ISSN 0003-6951, DOI 10.1063/1.112382)

Bojun Zhou, Funian Cao, Lanying Lin, Wenju Ma, Zheng, Tao et Xue, Growth of GaAs Single Crystals at High Gravity, Springer US, 1^er janvier 1994, 53–60 p. (ISBN 978-1-4613-6073-5, DOI 10.1007/978-1-4615-2520-2_5)

Lin, Zhong et Chen, « Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity », Journal of Crystal Growth, vol. 191, n^o 3,‎ 15 juillet 1998, p. 586–588 (DOI 10.1016/S0022-0248(98)00372-8, Bibcode 1998JCrGr.191..586L)

Chen, Wang, He et Lin, « Effects of point defects on lattice parameters of semiconductors », Physical Review B, vol. 54, n^o 12,‎ 15 septembre 1996, p. 8516–8521 (PMID 9984526, DOI 10.1103/PhysRevB.54.8516, Bibcode 1996PhRvB..54.8516C)

Yang, Wang, Cheng et Liang, « Influence of DX centers in the AlxGa1−xAs barrier on the low‐temperature density and mobility of the two‐dimensional electron gas in GaAs/AlGaAs modulation‐doped heterostructure », Applied Physics Letters, vol. 66, n^o 11,‎ 13 mars 1995, p. 1406–1408 (ISSN 0003-6951, DOI 10.1063/1.113216)

Wu, Wang, Lin et Han, « Influence of the semi‐insulating GaAs Schottky pad on the Schottky barrier in the active layer », Applied Physics Letters, vol. 68, n^o 18,‎ 29 avril 1996, p. 2550–2552 (ISSN 0003-6951, DOI 10.1063/1.116180, Bibcode 1996ApPhL..68.2550W)

Li, Wang, Liang et Ren, « Backgating and light sensitivity in GaAs metal-semiconductor field effect transistors », Journal of Crystal Growth, vol. 150, Part 2,‎ 1^er mai 1995, p. 1270–1274 (DOI 10.1016/0022-0248(95)80143-Z, Bibcode 1995JCrGr.150.1270L)

Tian, Jiang, Zeng et Huang, « Photon energy dependence of SW effect in a-Si:H films », Solid State Communications, vol. 57, n^o 7,‎ 1986, p. 543–544 (DOI 10.1016/0038-1098(86)90627-7, Bibcode 1986SSCom..57..543T)

Wang, Ma, Cai et Yu, « Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon », Semiconductor Science and Technology, vol. 14, n^o 1,‎ 1^er janvier 1999, p. 74–76 (DOI 10.1088/0268-1242/14/1/010, Bibcode 1999SeScT..14...74W)

Lin, Zhong, Wang et Li, « Properties and applications of GaAs single crystal grown under microgravity conditions », Advances in Space Research, vol. 13, n^o 7,‎ 1993, p. 203–208 (DOI 10.1016/0273-1177(93)90373-j, Bibcode 1993AdSpR..13Q.203L)

Zhong, Zhou, Yan et Cao, « Preliminary results of GaAs single crystal growth under high gravity conditions », Journal of Crystal Growth, vol. 119, n^os 1–2,‎ 2 avril 1992, p. 74–78 (DOI 10.1016/0022-0248(92)90206-X, Bibcode 1992JCrGr.119...74Z, lire en ligne)

Wang, Li, Wan et Lin, « Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment », Journal of Crystal Growth, vol. 103, n^os 1–4,‎ 1990, p. 38–45 (DOI 10.1016/0022-0248(90)90167-j, Bibcode 1990JCrGr.103...38W)

Zhiyuan, Youwen, Yiping et Manlong, « Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances », Journal of Crystal Growth, vol. 259, n^os 1–2,‎ 1^er novembre 2003, p. 1–7 (DOI 10.1016/j.jcrysgro.2003.07.009, Bibcode 2003JCrGr.259....1Z)

Chen, Xu, Lin et Wang, « Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite », Solid State Communications, vol. 105, n^o 2,‎ 1^er janvier 1998, p. 129–134 (DOI 10.1016/S0038-1098(97)10075-8, Bibcode 1998SSCom.105..129C)

Tan, Wang, Wang et Yu, « Fabrication of novel double-hetero-epitaxial SOI structure Si/γ-Al2O3/Si », Journal of Crystal Growth, vol. 247, n^os 3–4,‎ 1^er janvier 2003, p. 255–260 (DOI 10.1016/S0022-0248(02)01989-9)

Chen, Wang, Lin et Lin, « Photostimulated luminescence of silver clusters in zeolite-Y », Physics Letters A, vol. 232, n^o 5,‎ 4 août 1997, p. 391–394 (DOI 10.1016/S0375-9601(97)00400-3, Bibcode 1997PhLA..232..391C)

Zhao, Sun, Dong et Jiao, « Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers », Materials Science and Engineering: B, vol. 91–92,‎ 30 avril 2002, p. 521–524 (DOI 10.1016/S0921-5107(01)01061-3)

Tan, Zan, Wang et Wang, « Very low-pressure VLP-CVD growth of high quality γ-Al2O3 films on silicon by multi-step process », Journal of Crystal Growth, vol. 236, n^os 1–3,‎ 1^er mars 2002, p. 261–266 (DOI 10.1016/S0022-0248(01)02159-5)

Chen, Lin, Wang et Lin, « Some new observation on the formation and optical properties of CdS clusters in zeolite-Y », Solid State Communications, vol. 100, n^o 2,‎ 1^er octobre 1996, p. 101–104 (DOI 10.1016/0038-1098(96)00276-1, Bibcode 1996SSCom.100..101W)

Lin, Wang, Chen et Lin, « Absorption spectra of Se8-ring clusters in zeolite 5A », Materials Science and Engineering: B, vol. 47, n^o 2,‎ 15 juin 1997, p. 91–95 (DOI 10.1016/S0921-5107(97)00016-0)

Lu, Liu, Wang et Lin, « Growth of GaSb and GaAsSb in the single phase region by MOVPE », Journal of Crystal Growth, vol. 124, n^os 1–4,‎ 1^er novembre 1992, p. 383–388 (DOI 10.1016/0022-0248(92)90488-5, Bibcode 1992JCrGr.124..383L)

Lanying, Zhaoqiang, Bojun et Suzhen, « Growth and properties of high purity LPE-GaAs », Journal of Crystal Growth, vol. 56, n^o 3,‎ 1982, p. 533–540 (DOI 10.1016/0022-0248(82)90036-7, Bibcode 1982JCrGr..56..533L)

Chen, Wang, Lin et Su, « New color centers and photostimulated luminescence of BaFCl:Eu2+ », Journal of Physics and Chemistry of Solids, vol. 59, n^o 1,‎ 1^er janvier 1998, p. 49–53 (DOI 10.1016/S0022-3697(97)00129-7, Bibcode 1998JPCS...59...49C)

Renyong, Yuanhuan, Shiduan et Lanying, « Channeling analysis of self-implanted and recrystallized silicon on sapphire », Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 15, n^os 1–6,‎ 1986, p. 350–351 (DOI 10.1016/0168-583x(86)90319-8, Bibcode 1986NIMPB..15..350R)

Chen, Zhong, Lin et Xie, « Semi-insulating GaAs grown in outer space », Materials Science and Engineering: B, vol. 75, n^os 2–3,‎ 1^er juin 2000, p. 134–138 (DOI 10.1016/S0921-5107(00)00348-2)

Lei, Zhanguo, Shouke et Lanying, « Neutron irradiation induced photoluminescence from silicon crystal grown in ambient hydrogen », Solid State Communications, vol. 74, n^o 11,‎ 1990, p. 1225–1228 (DOI 10.1016/0038-1098(90)90311-x, Bibcode 1990SSCom..74.1225L)

Liu, Wang, Lu et Wang, « The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy », Journal of Crystal Growth, vol. 189–190, n^os 1–2,‎ 15 juin 1998, p. 287–290 (DOI 10.1016/S0022-0248(98)00264-4, Bibcode 1998JCrGr.189..287L)

Liu, Lu, Wang et Wang, « The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy », Journal of Crystal Growth, vol. 193, n^os 1–2,‎ 15 septembre 1998, p. 23–27 (DOI 10.1016/S0022-0248(98)00476-X, Bibcode 1998JCrGr.193...23L)

Zhuang, Li, Pan et Li, « Self-organization of the InGaAs/GaAs quantum dots superlattice », Journal of Crystal Growth, vol. 201–202, n^o 3,‎ 1^er mai 1999, p. 1161–1163 (DOI 10.1016/S0022-0248(99)00010-X, Bibcode 1999JCrGr.201.1161Z)

Chen, Wang et Lin, « Thermoluminescence of CdS clusters in zeolite-Y », Journal of Luminescence, vol. 71, n^o 2,‎ 1^er mars 1997, p. 151–156 (DOI 10.1016/S0022-2313(96)00129-9, Bibcode 1997JLum...71..151C)

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Lanying Lin (French Wikipedia)

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Lanying Lin (French Wikipedia)

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doi.org (Global: 2nd place; French: 3rd place)

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erenow.net (Global: low place; French: low place)

fjnu.edu.cn (Global: low place; French: low place)

xcb.fjnu.edu.cn

google.ch (Global: 3,220th place; French: 507th place)

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harvard.edu (Global: 18th place; French: 118th place)

ui.adsabs.harvard.edu

imech.ac.cn (Global: low place; French: low place)

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issn.org (Global: 57th place; French: 4th place)

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myscienceboutique.com (Global: low place; French: low place)

nih.gov (Global: 4th place; French: 12th place)

ncbi.nlm.nih.gov

people.com.cn (Global: 351st place; French: 2,649th place)

finance.people.com.cn

wanhossolars.com (Global: low place; French: low place)

worldcat.org (Global: 5th place; French: 13th place)

doi.org (Global: 2^nd place; French: 3^rd place)

google.ch (Global: 3,220^th place; French: 507^th place)

harvard.edu (Global: 18^th place; French: 118^th place)

issn.org (Global: 57^th place; French: 4^th place)

nih.gov (Global: 4^th place; French: 12^th place)

people.com.cn (Global: 351^st place; French: 2,649^th place)

worldcat.org (Global: 5^th place; French: 13^th place)