(en) J. K. Liu, « Growth morphology and surface‐acoustic‐wave measurements of AIN films on sapphire », Journal of Applied Physics, no 46, , p. 3703 (lire en ligne)
aps.org
journals.aps.org
(en) Martin Feneberg, Robert A. R. Leute, Benjamin Neuschl, Klaus Thonke et Matthias Bickermann, « High-excitation and high-resolution photoluminescence spectra of bulk AlN », Physical Review B, vol. 82, no 7, , article no 075208 (DOI10.1103/PhysRevB.82.075208, Bibcode2010PhRvB..82g5208F, lire en ligne).
(en) Zhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael E. Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan et Samuel Graham, « Experimental observation of high intrinsic thermal conductivity of AlN », Physical Review Materials, vol. 4, no 4, , article no 044602 (DOI10.1103/PhysRevMaterials.4.044602, Bibcode2020PhRvM...4d4602C, arXiv1911.01595, S2CID207780348, lire en ligne).
arxiv.org
(en) Zhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael E. Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan et Samuel Graham, « Experimental observation of high intrinsic thermal conductivity of AlN », Physical Review Materials, vol. 4, no 4, , article no 044602 (DOI10.1103/PhysRevMaterials.4.044602, Bibcode2020PhRvM...4d4602C, arXiv1911.01595, S2CID207780348, lire en ligne).
(en) Runjie Lily Xu, Miguel Muñoz Rojo, S. M. Islam, Aditya Sood, Bozo Vareskic, Ankita Katre, Natalio Mingo, Kenneth E. Goodson, Huili Grace Xing, Debdeep Jena Eric Pop, « Thermal conductivity of crystalline AlN and the influence of atomic-scale defects », Journal of Applied Physics, vol. 126, no 18, , article no 185105 (DOI10.1063/1.5097172, Bibcode2019JAP...126r5105X, arXiv1904.00345, S2CID90262793, lire en ligne).
dguv.de
gestis.dguv.de
Entrée « Aluminium nitride » dans la base de données de produits chimiques GESTIS de la IFA (organisme allemand responsable de la sécurité et de la santé au travail) (allemand, anglais), accès le 12 janvier 2023 (JavaScript nécessaire)
doi.org
dx.doi.org
(en) Martin Feneberg, Robert A. R. Leute, Benjamin Neuschl, Klaus Thonke et Matthias Bickermann, « High-excitation and high-resolution photoluminescence spectra of bulk AlN », Physical Review B, vol. 82, no 7, , article no 075208 (DOI10.1103/PhysRevB.82.075208, Bibcode2010PhRvB..82g5208F, lire en ligne).
(en) Zhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael E. Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan et Samuel Graham, « Experimental observation of high intrinsic thermal conductivity of AlN », Physical Review Materials, vol. 4, no 4, , article no 044602 (DOI10.1103/PhysRevMaterials.4.044602, Bibcode2020PhRvM...4d4602C, arXiv1911.01595, S2CID207780348, lire en ligne).
(en) A. AlShaikhi et G. P. Srivastava, « Thermal conductivity of single crystal and ceramic AlN », Journal of Applied Physics, vol. 103, no 8, , article no 083554-083554-6 (DOI10.1063/1.2908082, Bibcode2008JAP...103h3554A, lire en ligne).
(en) Wu Li et Natalio Mingo, « Thermal conductivity of bulk and nanowire InAs, AlN, and BeO polymorphs from first principles », Journal of Applied Physics, vol. 114, no 18, , article no 183505-183505-4 (DOI10.1063/1.4827419, Bibcode2013JAP...114r3505L, lire en ligne).
(en) Marc-Alexandre Dubois et Paul Muralt, « Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications », Applied Physics Letters, vol. 74, no 20, , article no 3032 (DOI10.1063/1.124055, Bibcode1999ApPhL..74.3032D, lire en ligne).
(en) G. Bu, D. Ciplys et M. Shur, « Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride », Applied Physics Letters, vol. 84, no 23, , article no 4611 (DOI10.1063/1.1755843, Bibcode2004ApPhL..84.4611B, lire en ligne).
(en) Austin Lee Hickman, Reet Chaudhuri, Samuel James Bader, Kazuki Nomoto, Lei Li, James C. M. Hwang, Huili Grace Xing et Debdeep Jena, « Next generation electronics on the ultrawide-bandgap aluminum nitride platform », Semiconductor Science and Technology, vol. 36, no 4, , article no 044001 (DOI10.1088/1361-6641/abe5fd, Bibcode2021SeScT..36d4001H, S2CID233936255, lire en ligne).
(en) Runjie Lily Xu, Miguel Muñoz Rojo, S. M. Islam, Aditya Sood, Bozo Vareskic, Ankita Katre, Natalio Mingo, Kenneth E. Goodson, Huili Grace Xing, Debdeep Jena Eric Pop, « Thermal conductivity of crystalline AlN and the influence of atomic-scale defects », Journal of Applied Physics, vol. 126, no 18, , article no 185105 (DOI10.1063/1.5097172, Bibcode2019JAP...126r5105X, arXiv1904.00345, S2CID90262793, lire en ligne).
(en) Satoru Tanaka, R. Scott Kern et Robert F. Davis, « Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy », Applied Physics Letters, vol. 66, no 1, , p. 37-39 (DOI10.1063/1.114173, Bibcode1995ApPhL..66...37T, lire en ligne).
(en) Mizuho Morita, Norihiko Uesugi, Seiji Isogai, Kazuo Tsubouchi et Nobuo Mikoshiba, « Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition », Japanese Journal of Applied Physics, vol. 20, no 1, , p. 17 (DOI10.1143/JJAP.20.17/meta, Bibcode1981JaJAP..20...17M, lire en ligne).
(en) R. D. Vispute, Hong Wu et J. Narayan, « High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition », Applied Physics Letters, vol. 67, no 11, , p. 1549-1551 (DOI10.1063/1.114489, Bibcode1995ApPhL..67.1549V, lire en ligne).
(en) Martin Feneberg, Robert A. R. Leute, Benjamin Neuschl, Klaus Thonke et Matthias Bickermann, « High-excitation and high-resolution photoluminescence spectra of bulk AlN », Physical Review B, vol. 82, no 7, , article no 075208 (DOI10.1103/PhysRevB.82.075208, Bibcode2010PhRvB..82g5208F, lire en ligne).
(en) Zhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael E. Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan et Samuel Graham, « Experimental observation of high intrinsic thermal conductivity of AlN », Physical Review Materials, vol. 4, no 4, , article no 044602 (DOI10.1103/PhysRevMaterials.4.044602, Bibcode2020PhRvM...4d4602C, arXiv1911.01595, S2CID207780348, lire en ligne).
(en) A. AlShaikhi et G. P. Srivastava, « Thermal conductivity of single crystal and ceramic AlN », Journal of Applied Physics, vol. 103, no 8, , article no 083554-083554-6 (DOI10.1063/1.2908082, Bibcode2008JAP...103h3554A, lire en ligne).
(en) Wu Li et Natalio Mingo, « Thermal conductivity of bulk and nanowire InAs, AlN, and BeO polymorphs from first principles », Journal of Applied Physics, vol. 114, no 18, , article no 183505-183505-4 (DOI10.1063/1.4827419, Bibcode2013JAP...114r3505L, lire en ligne).
(en) Marc-Alexandre Dubois et Paul Muralt, « Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications », Applied Physics Letters, vol. 74, no 20, , article no 3032 (DOI10.1063/1.124055, Bibcode1999ApPhL..74.3032D, lire en ligne).
(en) G. Bu, D. Ciplys et M. Shur, « Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride », Applied Physics Letters, vol. 84, no 23, , article no 4611 (DOI10.1063/1.1755843, Bibcode2004ApPhL..84.4611B, lire en ligne).
(en) Austin Lee Hickman, Reet Chaudhuri, Samuel James Bader, Kazuki Nomoto, Lei Li, James C. M. Hwang, Huili Grace Xing et Debdeep Jena, « Next generation electronics on the ultrawide-bandgap aluminum nitride platform », Semiconductor Science and Technology, vol. 36, no 4, , article no 044001 (DOI10.1088/1361-6641/abe5fd, Bibcode2021SeScT..36d4001H, S2CID233936255, lire en ligne).
(en) Runjie Lily Xu, Miguel Muñoz Rojo, S. M. Islam, Aditya Sood, Bozo Vareskic, Ankita Katre, Natalio Mingo, Kenneth E. Goodson, Huili Grace Xing, Debdeep Jena Eric Pop, « Thermal conductivity of crystalline AlN and the influence of atomic-scale defects », Journal of Applied Physics, vol. 126, no 18, , article no 185105 (DOI10.1063/1.5097172, Bibcode2019JAP...126r5105X, arXiv1904.00345, S2CID90262793, lire en ligne).
(en) Satoru Tanaka, R. Scott Kern et Robert F. Davis, « Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy », Applied Physics Letters, vol. 66, no 1, , p. 37-39 (DOI10.1063/1.114173, Bibcode1995ApPhL..66...37T, lire en ligne).
(en) Mizuho Morita, Norihiko Uesugi, Seiji Isogai, Kazuo Tsubouchi et Nobuo Mikoshiba, « Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition », Japanese Journal of Applied Physics, vol. 20, no 1, , p. 17 (DOI10.1143/JJAP.20.17/meta, Bibcode1981JaJAP..20...17M, lire en ligne).
(en) R. D. Vispute, Hong Wu et J. Narayan, « High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition », Applied Physics Letters, vol. 67, no 11, , p. 1549-1551 (DOI10.1063/1.114489, Bibcode1995ApPhL..67.1549V, lire en ligne).
(en) Austin Lee Hickman, Reet Chaudhuri, Samuel James Bader, Kazuki Nomoto, Lei Li, James C. M. Hwang, Huili Grace Xing et Debdeep Jena, « Next generation electronics on the ultrawide-bandgap aluminum nitride platform », Semiconductor Science and Technology, vol. 36, no 4, , article no 044001 (DOI10.1088/1361-6641/abe5fd, Bibcode2021SeScT..36d4001H, S2CID233936255, lire en ligne).
(en) Mizuho Morita, Norihiko Uesugi, Seiji Isogai, Kazuo Tsubouchi et Nobuo Mikoshiba, « Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition », Japanese Journal of Applied Physics, vol. 20, no 1, , p. 17 (DOI10.1143/JJAP.20.17/meta, Bibcode1981JaJAP..20...17M, lire en ligne).
loc.gov
lccn.loc.gov
(en) Bodie Eugene Douglas et Shih-Ming Ho, Structure and Chemistry of Crystalline Solids, Pittsburgh, Springer Science + Business Media, Inc, , 346 p. (ISBN978-0-387-26147-8, LCCN2005927929).
(en) Yoshitaka Taniyasu, Makoto Kasu et Toshiki Makimoto, « An aluminium nitride light-emitting diode with a wavelength of 210 nanometres », Nature, no 441, , p. 325-328 (lire en ligne)
(en) S. Zhao, A. T. Connie et M. H. T. Dastjerdi, « Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light », Scientific Reports, no 5, (lire en ligne)
(en) Kuan-Hsun Chiu, « Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator », Thin Solid Films, no 515, , p. 4819–4825 (lire en ligne)
scitation.org
aip.scitation.org
(en) A. AlShaikhi et G. P. Srivastava, « Thermal conductivity of single crystal and ceramic AlN », Journal of Applied Physics, vol. 103, no 8, , article no 083554-083554-6 (DOI10.1063/1.2908082, Bibcode2008JAP...103h3554A, lire en ligne).
(en) Wu Li et Natalio Mingo, « Thermal conductivity of bulk and nanowire InAs, AlN, and BeO polymorphs from first principles », Journal of Applied Physics, vol. 114, no 18, , article no 183505-183505-4 (DOI10.1063/1.4827419, Bibcode2013JAP...114r3505L, lire en ligne).
(en) Marc-Alexandre Dubois et Paul Muralt, « Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications », Applied Physics Letters, vol. 74, no 20, , article no 3032 (DOI10.1063/1.124055, Bibcode1999ApPhL..74.3032D, lire en ligne).
(en) G. Bu, D. Ciplys et M. Shur, « Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride », Applied Physics Letters, vol. 84, no 23, , article no 4611 (DOI10.1063/1.1755843, Bibcode2004ApPhL..84.4611B, lire en ligne).
(en) Runjie Lily Xu, Miguel Muñoz Rojo, S. M. Islam, Aditya Sood, Bozo Vareskic, Ankita Katre, Natalio Mingo, Kenneth E. Goodson, Huili Grace Xing, Debdeep Jena Eric Pop, « Thermal conductivity of crystalline AlN and the influence of atomic-scale defects », Journal of Applied Physics, vol. 126, no 18, , article no 185105 (DOI10.1063/1.5097172, Bibcode2019JAP...126r5105X, arXiv1904.00345, S2CID90262793, lire en ligne).
(en) Satoru Tanaka, R. Scott Kern et Robert F. Davis, « Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy », Applied Physics Letters, vol. 66, no 1, , p. 37-39 (DOI10.1063/1.114173, Bibcode1995ApPhL..66...37T, lire en ligne).
(en) R. D. Vispute, Hong Wu et J. Narayan, « High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition », Applied Physics Letters, vol. 67, no 11, , p. 1549-1551 (DOI10.1063/1.114489, Bibcode1995ApPhL..67.1549V, lire en ligne).
(en) Zhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael E. Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan et Samuel Graham, « Experimental observation of high intrinsic thermal conductivity of AlN », Physical Review Materials, vol. 4, no 4, , article no 044602 (DOI10.1103/PhysRevMaterials.4.044602, Bibcode2020PhRvM...4d4602C, arXiv1911.01595, S2CID207780348, lire en ligne).
(en) Austin Lee Hickman, Reet Chaudhuri, Samuel James Bader, Kazuki Nomoto, Lei Li, James C. M. Hwang, Huili Grace Xing et Debdeep Jena, « Next generation electronics on the ultrawide-bandgap aluminum nitride platform », Semiconductor Science and Technology, vol. 36, no 4, , article no 044001 (DOI10.1088/1361-6641/abe5fd, Bibcode2021SeScT..36d4001H, S2CID233936255, lire en ligne).
(en) Runjie Lily Xu, Miguel Muñoz Rojo, S. M. Islam, Aditya Sood, Bozo Vareskic, Ankita Katre, Natalio Mingo, Kenneth E. Goodson, Huili Grace Xing, Debdeep Jena Eric Pop, « Thermal conductivity of crystalline AlN and the influence of atomic-scale defects », Journal of Applied Physics, vol. 126, no 18, , article no 185105 (DOI10.1063/1.5097172, Bibcode2019JAP...126r5105X, arXiv1904.00345, S2CID90262793, lire en ligne).