Nitrure de gallium-indium (French Wikipedia)

Analysis of information sources in references of the Wikipedia article "Nitrure de gallium-indium" in French language version.

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18doi.org

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11harvard.edu

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11semanticscholar.org

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3nih.gov

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2web.archive.org

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2arxiv.org

69^th place

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1archives-ouvertes.fr

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1dtic.mil

833^rd place

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1vcu.edu

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1mtu.edu

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1lbl.gov

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1wikiwix.com

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1archive.is

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1googleusercontent.com

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1queensu.ca

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1kurzweilai.net

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1zenodo.org

621^st place

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archive.is

A nearly perfect solar cell, part 2 « https://web.archive.org/web/20200917000213/https://www2.lbl.gov/Science-Articles/Archive/MSD-perfect-solar-cell-2.html »^{(Archive.org • Wikiwix • Archive.is • Google • Que faire ?)}, 17 septembre 2020. Lbl.gov. Retrieved on 2011-11-07.

archives-ouvertes.fr

hal.archives-ouvertes.fr

(en) V. Kachkanov, K.P. O'Donnell, S. Pereira et R.W. Martin, « Localization of excitation in InGaN epilayers », Phil. Mag., vol. 87, n^o 13,‎ 2007, p. 1999–2017 (DOI 10.1080/14786430701342164, Bibcode 2007PMag...87.1999K, S2CID 136950050, lire en ligne)

arxiv.org

(en) Dirk V. P. McLaughlin et J.M. Pearce, « Analytical Model for the Optical Functions of Indium Gallium Nitride with Application to Thin Film Solar Photovoltaic Cells », Materials Science and Engineering: B, vol. 177, n^o 2,‎ 2012, p. 239–244 (DOI 10.1016/j.mseb.2011.12.008, arXiv 1201.2911, S2CID 95949405)
(en) S. Keating, M.G. Urquhart, D.V.P. McLaughlin et J.M. Pearce, « Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth », Crystal Growth & Design, vol. 11, n^o 2,‎ 2011, p. 565–568 (DOI 10.1021/cg101450n, arXiv 1203.0645, S2CID 53506014, lire en ligne)

doi.org

dx.doi.org

(en) G. Linti, The Group13 Metals Aluminium, Gallium, Indium and Thallium. Chemical Patterns and Peculiarities, Simon Aldridge and AnthonyJ. Downs.Angew. Chem (DOI 10.1002/anie.201105633)
(en) V. Kachkanov, K.P. O'Donnell, S. Pereira et R.W. Martin, « Localization of excitation in InGaN epilayers », Phil. Mag., vol. 87, n^o 13,‎ 2007, p. 1999–2017 (DOI 10.1080/14786430701342164, Bibcode 2007PMag...87.1999K, S2CID 136950050, lire en ligne)
(en) A. Reale, A. Di Carlo, A. Vinattieri, M. Colocci, F. Rossi, N. Armani, C. Ferrari, G. Salviati, L. Lazzarini et V. Grillo, « Investigation of the recombination dynamics in low In-content InGaN MQWs by means of cathodoluminescence and photoluminescence excitation », Physica Status Solidi C, vol. 2, n^o 2,‎ 2005, p. 817–821 (DOI 10.1002/pssc.200460305, Bibcode 2005PSSCR...2..817R)
(en) Rak Jun Choi, Hyung Jae Lee, Yoon-bong Hahn et Hyung Koun Cho, « Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities », Korean Journal of Chemical Engineering, vol. 21,‎ 2004, p. 292–295 (DOI 10.1007/BF02705411, S2CID 54212942)
(en) Liang-Yi Chen, Ying-Yuan Huang, Chun-Hsiang Chang, Yu-Hsuan Sun, Yun-Wei Cheng, Min-Yung Ke, Cheng-Pin Chen et JianJang Huang, « High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes », Optics Express, vol. 18, n^o 8,‎ 2010, p. 7664–7669 (PMID 20588606, DOI 10.1364/OE.18.007664 , Bibcode 2010OExpr..18.7664C)
(en) C Skierbiszewski, P Perlin, I Grzegory, Z R Wasilewski, M Siekacz, A Feduniewicz, P Wisniewski, J Borysiuk, P Prystawko, G Kamler, T Suski and S Porowski, « High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy », Semiconductor Science and Technology, vol. 20, n^o 8,‎ 2005, p. 809–813 (DOI 10.1088/0268-1242/20/8/030, Bibcode 2005SeScT..20..809S, S2CID 97464128)
(en) F. Sacconi, M. Auf der Maur, A. Pecchia, M. Lopez et A. Di Carlo, « Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs », Physica Status Solidi C, vol. 9, n^o 5,‎ 2012, p. 1315–1319 (DOI 10.1002/pssc.201100205 , Bibcode 2012PSSCR...9.1315S)
(en) M. Lopez, F. Sacconi, M. Auf der Maur, A. Pecchia, A. Di Carlo, « Atomistic simulation of InGaN/GaN quantum disk LEDs », Optical and Quantum Electronics, vol. 44, n^o 3,‎ 2012, p. 89–94 (DOI 10.1007/s11082-012-9554-3, S2CID 126339984)
(en) M. Auf der Maur, K. Lorenz and A. Di Carlo, « Band gap engineering approaches to increase InGaN/GaN LED efficiency », Physica Status Solidi C, vol. 44, n^os 3–5,‎ 2012, p. 83–88 (DOI 10.1007/s11082-011-9536-x, S2CID 11753092)
(en) D.V.P. McLaughlin et J.M. Pearce, « Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion », Metallurgical and Materials Transactions A, vol. 44, n^o 4,‎ 2013, p. 1947–1954 (DOI 10.1007/s11661-013-1622-1, Bibcode 2013MMTA...44.1947M, S2CID 13952749, lire en ligne)
(en) A. Bhuiyan, K. Sugita, A. Hashimoto et A. Yamamoto, « InGaN Solar Cells: Present State of the Art and Important Challenges », IEEE Journal of Photovoltaics, vol. 2, n^o 3,‎ 2012, p. 276–293 (DOI 10.1109/JPHOTOV.2012.2193384, S2CID 22027530)
(en) S. W. Zeng et al., « Substantial photo-response of InGaN p–i–n homojunction solar cells », Semicond. Sci. Technol., vol. 24, n^o 5,‎ 2009, p. 055009 (DOI 10.1088/0268-1242/24/5/055009, Bibcode 2009SeScT..24e5009Z, S2CID 97236733)
(en) X. Sun et al., « Photoelectric characteristics of metal/InGaN/GaN heterojunction structure », J. Phys. D, vol. 41, n^o 16,‎ 2008, p. 165108 (DOI 10.1088/0022-3727/41/16/165108, Bibcode 2008JPhD...41p5108S, S2CID 120480676)
(en) Dirk V. P. McLaughlin et J.M. Pearce, « Analytical Model for the Optical Functions of Indium Gallium Nitride with Application to Thin Film Solar Photovoltaic Cells », Materials Science and Engineering: B, vol. 177, n^o 2,‎ 2012, p. 239–244 (DOI 10.1016/j.mseb.2011.12.008, arXiv 1201.2911, S2CID 95949405)
(en) L. Cao, J. S. White, J. S. Park, J. A. Schuller, B. M. Clemens et M. L. Brongersma, « Engineering light absorption in semiconductor nanowire devices », Nature Materials, vol. 8, n^o 8,‎ 2009, p. 643–647 (PMID 19578337, DOI 10.1038/nmat2477, Bibcode 2009NatMa...8..643C)
(en) S. Keating, M.G. Urquhart, D.V.P. McLaughlin et J.M. Pearce, « Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth », Crystal Growth & Design, vol. 11, n^o 2,‎ 2011, p. 565–568 (DOI 10.1021/cg101450n, arXiv 1203.0645, S2CID 53506014, lire en ligne)
(en) D. Cherns, R. F. Webster, S. V. Novikov, C. T. Foxon, A. M. Fischer, F. A. Ponce et S. J. Haigh, « Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy », Nanotechnology, vol. 25, n^o 21,‎ 2014, p. 215705 (PMID 24785272, DOI 10.1088/0957-4484/25/21/215705 , Bibcode 2014Nanot..25u5705C)
(en) A. M. Fischer, Y. O. Wei, F. A. Ponce, M. Moseley, B. Gunning et W. A. Doolittle, « Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation », Applied Physics Letters, vol. 103, n^o 13,‎ 2013, p. 131101 (DOI 10.1063/1.4822122, Bibcode 2013ApPhL.103m1101F, lire en ligne)

dtic.mil

handle.dtic.mil

(en) P. G. Eliseev, « Radiative processes in InGaN quantum wells » [archive du 8 avril 2013]

googleusercontent.com

webcache.googleusercontent.com

A nearly perfect solar cell, part 2 « https://web.archive.org/web/20200917000213/https://www2.lbl.gov/Science-Articles/Archive/MSD-perfect-solar-cell-2.html »^{(Archive.org • Wikiwix • Archive.is • Google • Que faire ?)}, 17 septembre 2020. Lbl.gov. Retrieved on 2011-11-07.

harvard.edu

ui.adsabs.harvard.edu

(en) V. Kachkanov, K.P. O'Donnell, S. Pereira et R.W. Martin, « Localization of excitation in InGaN epilayers », Phil. Mag., vol. 87, n^o 13,‎ 2007, p. 1999–2017 (DOI 10.1080/14786430701342164, Bibcode 2007PMag...87.1999K, S2CID 136950050, lire en ligne)
(en) A. Reale, A. Di Carlo, A. Vinattieri, M. Colocci, F. Rossi, N. Armani, C. Ferrari, G. Salviati, L. Lazzarini et V. Grillo, « Investigation of the recombination dynamics in low In-content InGaN MQWs by means of cathodoluminescence and photoluminescence excitation », Physica Status Solidi C, vol. 2, n^o 2,‎ 2005, p. 817–821 (DOI 10.1002/pssc.200460305, Bibcode 2005PSSCR...2..817R)
(en) Liang-Yi Chen, Ying-Yuan Huang, Chun-Hsiang Chang, Yu-Hsuan Sun, Yun-Wei Cheng, Min-Yung Ke, Cheng-Pin Chen et JianJang Huang, « High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes », Optics Express, vol. 18, n^o 8,‎ 2010, p. 7664–7669 (PMID 20588606, DOI 10.1364/OE.18.007664 , Bibcode 2010OExpr..18.7664C)
(en) C Skierbiszewski, P Perlin, I Grzegory, Z R Wasilewski, M Siekacz, A Feduniewicz, P Wisniewski, J Borysiuk, P Prystawko, G Kamler, T Suski and S Porowski, « High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy », Semiconductor Science and Technology, vol. 20, n^o 8,‎ 2005, p. 809–813 (DOI 10.1088/0268-1242/20/8/030, Bibcode 2005SeScT..20..809S, S2CID 97464128)
(en) F. Sacconi, M. Auf der Maur, A. Pecchia, M. Lopez et A. Di Carlo, « Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs », Physica Status Solidi C, vol. 9, n^o 5,‎ 2012, p. 1315–1319 (DOI 10.1002/pssc.201100205 , Bibcode 2012PSSCR...9.1315S)
(en) D.V.P. McLaughlin et J.M. Pearce, « Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion », Metallurgical and Materials Transactions A, vol. 44, n^o 4,‎ 2013, p. 1947–1954 (DOI 10.1007/s11661-013-1622-1, Bibcode 2013MMTA...44.1947M, S2CID 13952749, lire en ligne)
(en) S. W. Zeng et al., « Substantial photo-response of InGaN p–i–n homojunction solar cells », Semicond. Sci. Technol., vol. 24, n^o 5,‎ 2009, p. 055009 (DOI 10.1088/0268-1242/24/5/055009, Bibcode 2009SeScT..24e5009Z, S2CID 97236733)
(en) X. Sun et al., « Photoelectric characteristics of metal/InGaN/GaN heterojunction structure », J. Phys. D, vol. 41, n^o 16,‎ 2008, p. 165108 (DOI 10.1088/0022-3727/41/16/165108, Bibcode 2008JPhD...41p5108S, S2CID 120480676)
(en) L. Cao, J. S. White, J. S. Park, J. A. Schuller, B. M. Clemens et M. L. Brongersma, « Engineering light absorption in semiconductor nanowire devices », Nature Materials, vol. 8, n^o 8,‎ 2009, p. 643–647 (PMID 19578337, DOI 10.1038/nmat2477, Bibcode 2009NatMa...8..643C)
(en) D. Cherns, R. F. Webster, S. V. Novikov, C. T. Foxon, A. M. Fischer, F. A. Ponce et S. J. Haigh, « Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy », Nanotechnology, vol. 25, n^o 21,‎ 2014, p. 215705 (PMID 24785272, DOI 10.1088/0957-4484/25/21/215705 , Bibcode 2014Nanot..25u5705C)
(en) A. M. Fischer, Y. O. Wei, F. A. Ponce, M. Moseley, B. Gunning et W. A. Doolittle, « Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation », Applied Physics Letters, vol. 103, n^o 13,‎ 2013, p. 131101 (DOI 10.1063/1.4822122, Bibcode 2013ApPhL.103m1101F, lire en ligne)

kurzweilai.net

(en) « Controlled atomic-layer crystal growth is 'breakthrough' for solar-cell efficiency », KurzweilAI (consulté le 31 octobre 2013)

lbl.gov

A nearly perfect solar cell, part 2 « https://web.archive.org/web/20200917000213/https://www2.lbl.gov/Science-Articles/Archive/MSD-perfect-solar-cell-2.html »^{(Archive.org • Wikiwix • Archive.is • Google • Que faire ?)}, 17 septembre 2020. Lbl.gov. Retrieved on 2011-11-07.

mtu.edu

digitalcommons.mtu.edu

(en) D.V.P. McLaughlin et J.M. Pearce, « Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion », Metallurgical and Materials Transactions A, vol. 44, n^o 4,‎ 2013, p. 1947–1954 (DOI 10.1007/s11661-013-1622-1, Bibcode 2013MMTA...44.1947M, S2CID 13952749, lire en ligne)

nih.gov

ncbi.nlm.nih.gov

(en) Liang-Yi Chen, Ying-Yuan Huang, Chun-Hsiang Chang, Yu-Hsuan Sun, Yun-Wei Cheng, Min-Yung Ke, Cheng-Pin Chen et JianJang Huang, « High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes », Optics Express, vol. 18, n^o 8,‎ 2010, p. 7664–7669 (PMID 20588606, DOI 10.1364/OE.18.007664 , Bibcode 2010OExpr..18.7664C)
(en) L. Cao, J. S. White, J. S. Park, J. A. Schuller, B. M. Clemens et M. L. Brongersma, « Engineering light absorption in semiconductor nanowire devices », Nature Materials, vol. 8, n^o 8,‎ 2009, p. 643–647 (PMID 19578337, DOI 10.1038/nmat2477, Bibcode 2009NatMa...8..643C)
(en) D. Cherns, R. F. Webster, S. V. Novikov, C. T. Foxon, A. M. Fischer, F. A. Ponce et S. J. Haigh, « Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy », Nanotechnology, vol. 25, n^o 21,‎ 2014, p. 215705 (PMID 24785272, DOI 10.1088/0957-4484/25/21/215705 , Bibcode 2014Nanot..25u5705C)

queensu.ca

qspace.library.queensu.ca

(en) S. Keating, M.G. Urquhart, D.V.P. McLaughlin et J.M. Pearce, « Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth », Crystal Growth & Design, vol. 11, n^o 2,‎ 2011, p. 565–568 (DOI 10.1021/cg101450n, arXiv 1203.0645, S2CID 53506014, lire en ligne)

semanticscholar.org

api.semanticscholar.org

(en) V. Kachkanov, K.P. O'Donnell, S. Pereira et R.W. Martin, « Localization of excitation in InGaN epilayers », Phil. Mag., vol. 87, n^o 13,‎ 2007, p. 1999–2017 (DOI 10.1080/14786430701342164, Bibcode 2007PMag...87.1999K, S2CID 136950050, lire en ligne)
(en) Rak Jun Choi, Hyung Jae Lee, Yoon-bong Hahn et Hyung Koun Cho, « Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities », Korean Journal of Chemical Engineering, vol. 21,‎ 2004, p. 292–295 (DOI 10.1007/BF02705411, S2CID 54212942)
(en) C Skierbiszewski, P Perlin, I Grzegory, Z R Wasilewski, M Siekacz, A Feduniewicz, P Wisniewski, J Borysiuk, P Prystawko, G Kamler, T Suski and S Porowski, « High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy », Semiconductor Science and Technology, vol. 20, n^o 8,‎ 2005, p. 809–813 (DOI 10.1088/0268-1242/20/8/030, Bibcode 2005SeScT..20..809S, S2CID 97464128)
(en) M. Lopez, F. Sacconi, M. Auf der Maur, A. Pecchia, A. Di Carlo, « Atomistic simulation of InGaN/GaN quantum disk LEDs », Optical and Quantum Electronics, vol. 44, n^o 3,‎ 2012, p. 89–94 (DOI 10.1007/s11082-012-9554-3, S2CID 126339984)
(en) M. Auf der Maur, K. Lorenz and A. Di Carlo, « Band gap engineering approaches to increase InGaN/GaN LED efficiency », Physica Status Solidi C, vol. 44, n^os 3–5,‎ 2012, p. 83–88 (DOI 10.1007/s11082-011-9536-x, S2CID 11753092)
(en) D.V.P. McLaughlin et J.M. Pearce, « Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion », Metallurgical and Materials Transactions A, vol. 44, n^o 4,‎ 2013, p. 1947–1954 (DOI 10.1007/s11661-013-1622-1, Bibcode 2013MMTA...44.1947M, S2CID 13952749, lire en ligne)
(en) A. Bhuiyan, K. Sugita, A. Hashimoto et A. Yamamoto, « InGaN Solar Cells: Present State of the Art and Important Challenges », IEEE Journal of Photovoltaics, vol. 2, n^o 3,‎ 2012, p. 276–293 (DOI 10.1109/JPHOTOV.2012.2193384, S2CID 22027530)
(en) S. W. Zeng et al., « Substantial photo-response of InGaN p–i–n homojunction solar cells », Semicond. Sci. Technol., vol. 24, n^o 5,‎ 2009, p. 055009 (DOI 10.1088/0268-1242/24/5/055009, Bibcode 2009SeScT..24e5009Z, S2CID 97236733)
(en) X. Sun et al., « Photoelectric characteristics of metal/InGaN/GaN heterojunction structure », J. Phys. D, vol. 41, n^o 16,‎ 2008, p. 165108 (DOI 10.1088/0022-3727/41/16/165108, Bibcode 2008JPhD...41p5108S, S2CID 120480676)
(en) Dirk V. P. McLaughlin et J.M. Pearce, « Analytical Model for the Optical Functions of Indium Gallium Nitride with Application to Thin Film Solar Photovoltaic Cells », Materials Science and Engineering: B, vol. 177, n^o 2,‎ 2012, p. 239–244 (DOI 10.1016/j.mseb.2011.12.008, arXiv 1201.2911, S2CID 95949405)
(en) S. Keating, M.G. Urquhart, D.V.P. McLaughlin et J.M. Pearce, « Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth », Crystal Growth & Design, vol. 11, n^o 2,‎ 2011, p. 565–568 (DOI 10.1021/cg101450n, arXiv 1203.0645, S2CID 53506014, lire en ligne)

vcu.edu

morkoc.vcu.edu

(en) HJ Chang et al., « Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters » (consulté le 20 septembre 2013)

web.archive.org

(en) P. G. Eliseev, « Radiative processes in InGaN quantum wells » [archive du 8 avril 2013]
A nearly perfect solar cell, part 2 « https://web.archive.org/web/20200917000213/https://www2.lbl.gov/Science-Articles/Archive/MSD-perfect-solar-cell-2.html »^{(Archive.org • Wikiwix • Archive.is • Google • Que faire ?)}, 17 septembre 2020. Lbl.gov. Retrieved on 2011-11-07.

wikiwix.com

archive.wikiwix.com

A nearly perfect solar cell, part 2 « https://web.archive.org/web/20200917000213/https://www2.lbl.gov/Science-Articles/Archive/MSD-perfect-solar-cell-2.html »^{(Archive.org • Wikiwix • Archive.is • Google • Que faire ?)}, 17 septembre 2020. Lbl.gov. Retrieved on 2011-11-07.

zenodo.org

(en) A. M. Fischer, Y. O. Wei, F. A. Ponce, M. Moseley, B. Gunning et W. A. Doolittle, « Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation », Applied Physics Letters, vol. 103, n^o 13,‎ 2013, p. 131101 (DOI 10.1063/1.4822122, Bibcode 2013ApPhL.103m1101F, lire en ligne)