(en) Elham Rafie Borujeny, Oles Sendetskyi, Michael D. Fleischauer et Kenneth C. Cadien, « Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition », ACS Applied Materials & Interfaces, vol. 12, no 39, , p. 44225-44237 (PMID32865966, DOI10.1021/acsami.0c08477, S2CID221403770, lire en ligne).
(en) Helen. Y. Playford, Alex C. Hannon, Matthew G. Tucker, Daniel M. Dawson, Sharon E. Ashbrook, Reza J. Kastiban, Jeremy Sloan et Richard I. Walton, « Characterization of Structural Disorder in γ-Ga2O3 », The Journal of Physical Chemistry C, vol. 118, no 29, , p. 16188-16198 (DOI10.1021/jp5033806, lire en ligne).
(en) Rustum Roy, V. G. Hill et E. F. Osborn, « Polymorphism of Ga2O3 and the System Ga2O3—H2O », Journal of the American Chemical Society, vol. 74, no 3, , p. 719-722 (DOI10.1021/ja01123a039, lire en ligne).
(en) Charles T. Prewitt, Robert D. Shannon, Donald Burl Rogers et Arthur W. Sleight, « The C rare earth oxide-corundum transition and crystal chemistry of oxides having the corundum structure », Inorganic Chemistry, vol. 8, no 9, , p. 1985-1993 (DOI10.1021/ic50079a033, lire en ligne).
(en) Karen N. Heinselman, Drew Haven, Andriy Zakutayev et Samantha B. Reese, « Projected Cost of Gallium Oxide Wafers from Edge-Defined Film-Fed Crystal Growth », Crystal Growth & Design, vol. 22, no 8, , p. 4854-4863 (DOI10.1021/acs.cgd.2c00340, lire en ligne).
(en) Samantha B. Reese, Timothy Remo, Johney Green et Andriy Zakutayev, « How Much Will Gallium Oxide Power Electronics Cost? », Joule, vol. 3, no 4, , p. 903-907 (DOI10.1016/j.joule.2019.01.011, S2CID127789383, lire en ligne).
dguv.de
gestis.dguv.de
Entrée « Gallium(III) oxide » dans la base de données de produits chimiques GESTIS de la IFA (organisme allemand responsable de la sécurité et de la santé au travail) (allemand, anglais), accès le 9 janvier 2023 (JavaScript nécessaire)
(en) M. Marezio et J. P. Remeika, « Bond Lengths in the α‐Ga2O3 Structure and the High‐Pressure Phase of Ga2−xFexO3 », The Journal of Chemical Physics, vol. 46, no 5, , p. 1862-1865 (DOI10.1063/1.1840945, Bibcode1967JChPh..46.1862M, lire en ligne).
(en) Elham Rafie Borujeny, Oles Sendetskyi, Michael D. Fleischauer et Kenneth C. Cadien, « Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition », ACS Applied Materials & Interfaces, vol. 12, no 39, , p. 44225-44237 (PMID32865966, DOI10.1021/acsami.0c08477, S2CID221403770, lire en ligne).
(en) Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng et Masataka Higashiwaki, « β-Gallium oxide power electronics », APL Materials, vol. 10, no 2, , article no 029201 (DOI10.1063/5.0060327, Bibcode2022APLM...10b9201G, S2CID246660179, lire en ligne).
(en) Duyoung Yang, Byungsoo Kim, Tae Hoon Eom, Yongjo Park et Ho Won Jang, « Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective », Electronic Materials Letters, vol. 18, no 2, , p. 113-128 (DOI10.1007/s13391-021-00333-5, Bibcode2022EML....18..113Y, S2CID245773856, lire en ligne).
(en) J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback et J. A. Simmons, « Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges », Advanced Electronic Materials, vol. 4, no 1, , article no 1600501 (DOI10.1002/aelm.201600501, S2CID38628999, lire en ligne).
(en) Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky et James S. Speck, « MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V/s at room temperature », APL Materials, vol. 7, no 2, , article no 022506 (DOI10.1063/1.5058059, Bibcode2019APLM....7b2506Z, S2CID104453229, lire en ligne).
(en) Helen. Y. Playford, Alex C. Hannon, Matthew G. Tucker, Daniel M. Dawson, Sharon E. Ashbrook, Reza J. Kastiban, Jeremy Sloan et Richard I. Walton, « Characterization of Structural Disorder in γ-Ga2O3 », The Journal of Physical Chemistry C, vol. 118, no 29, , p. 16188-16198 (DOI10.1021/jp5033806, lire en ligne).
(en) Helen Y. Playford, Alex C. Hannon, Emma R. Barney, Richard I. Walton, « Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction », Chemistry, vol. 19, no 8, , p. 2803-2813 (PMID23307528, DOI10.1002/chem.201203359, lire en ligne).
(en) Rustum Roy, V. G. Hill et E. F. Osborn, « Polymorphism of Ga2O3 and the System Ga2O3—H2O », Journal of the American Chemical Society, vol. 74, no 3, , p. 719-722 (DOI10.1021/ja01123a039, lire en ligne).
(en) Charles T. Prewitt, Robert D. Shannon, Donald Burl Rogers et Arthur W. Sleight, « The C rare earth oxide-corundum transition and crystal chemistry of oxides having the corundum structure », Inorganic Chemistry, vol. 8, no 9, , p. 1985-1993 (DOI10.1021/ic50079a033, lire en ligne).
(en) Ildikó Cora, Francesco Mezzadri, Francesco Boschi, Matteo Bosi, Maria Čaplovičová, Gianluca Calestani, István Dódony, Béla Pécz et Roberto Fornari, « The real structure of ε-Ga2-O3 and its relation to κ-phase », CrystEngComm, vol. 19, no 11, , p. 1509-1516 (DOI10.1039/C7CE00123A, lire en ligne).
(en) M. Pavesi, F. Fabbri, F. Boschi, G. Piacentini, A. Baraldi, M. Bosi, E. Gombia, A. Parisini et R. Fornari, « ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors », Materials Chemistry and Physics, vol. 205, , p. 502-507 (DOI10.1016/j.matchemphys.2017.11.023, lire en ligne).
(en) Jianhua Lin, Liuyan Zhou, Yuyu Shen, Jie Fu, Yanling Chen, Lei Lei, Renguang Ye, Yang Shen, Degang Deng et Shiqing Xu, « [Zn2+–Ge4+] co-substitutes [Ga3+–Ga3+] to coordinately broaden the near-infrared emission of Cr3+ in Ga2O3 phosphors », Physical Chemistry Chemical Physics, vol. 25, no 3, , p. 2090-2097 (PMID36562283, DOI10.1039/D2CP04737C, S2CID254561209, lire en ligne).
(en) Zhifu Liu, Toshinari Yamazaki, Yanbai Shen, Toshio Kikuta, Noriyuki Nakatani et Yongxiang Li, « O2 and CO sensing of Ga2O3 multiple nanowire gas sensors », Sensors and Actuators B: Chemical, vol. 129, no 2, , p. 666-670 (DOI10.1016/j.snb.2007.09.055, lire en ligne).
(en) Samantha B. Reese, Timothy Remo, Johney Green et Andriy Zakutayev, « How Much Will Gallium Oxide Power Electronics Cost? », Joule, vol. 3, no 4, , p. 903-907 (DOI10.1016/j.joule.2019.01.011, S2CID127789383, lire en ligne).
(en) Karen N. Heinselman, Drew Haven, Andriy Zakutayev et Samantha B. Reese, « Projected Cost of Gallium Oxide Wafers from Edge-Defined Film-Fed Crystal Growth », Crystal Growth & Design, vol. 22, no 8, , p. 4854-4863 (DOI10.1021/acs.cgd.2c00340, lire en ligne).
(en) D. A. Bauman, A. I. Borodkin, A. A. Petrenko, D. I. Panov, A. V. Kremleva, V. A. Spiridonov, D. A. Zakgeim, M. V. Silnikov, M. A. Odnoblyudov, A. E. Romanov et V. E. Bougrov, « On improving the radiation resistance of gallium oxide for space applications », Acta Astronautica, vol. 180, , p. 125-129 (DOI10.1016/j.actaastro.2020.12.010, Bibcode2021AcAau.180..125B, lire en ligne).
(en) M. Marezio et J. P. Remeika, « Bond Lengths in the α‐Ga2O3 Structure and the High‐Pressure Phase of Ga2−xFexO3 », The Journal of Chemical Physics, vol. 46, no 5, , p. 1862-1865 (DOI10.1063/1.1840945, Bibcode1967JChPh..46.1862M, lire en ligne).
(en) Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng et Masataka Higashiwaki, « β-Gallium oxide power electronics », APL Materials, vol. 10, no 2, , article no 029201 (DOI10.1063/5.0060327, Bibcode2022APLM...10b9201G, S2CID246660179, lire en ligne).
(en) Duyoung Yang, Byungsoo Kim, Tae Hoon Eom, Yongjo Park et Ho Won Jang, « Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective », Electronic Materials Letters, vol. 18, no 2, , p. 113-128 (DOI10.1007/s13391-021-00333-5, Bibcode2022EML....18..113Y, S2CID245773856, lire en ligne).
(en) Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky et James S. Speck, « MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V/s at room temperature », APL Materials, vol. 7, no 2, , article no 022506 (DOI10.1063/1.5058059, Bibcode2019APLM....7b2506Z, S2CID104453229, lire en ligne).
(en) D. A. Bauman, A. I. Borodkin, A. A. Petrenko, D. I. Panov, A. V. Kremleva, V. A. Spiridonov, D. A. Zakgeim, M. V. Silnikov, M. A. Odnoblyudov, A. E. Romanov et V. E. Bougrov, « On improving the radiation resistance of gallium oxide for space applications », Acta Astronautica, vol. 180, , p. 125-129 (DOI10.1016/j.actaastro.2020.12.010, Bibcode2021AcAau.180..125B, lire en ligne).
nih.gov
ncbi.nlm.nih.gov
(en) Elham Rafie Borujeny, Oles Sendetskyi, Michael D. Fleischauer et Kenneth C. Cadien, « Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition », ACS Applied Materials & Interfaces, vol. 12, no 39, , p. 44225-44237 (PMID32865966, DOI10.1021/acsami.0c08477, S2CID221403770, lire en ligne).
(en) Helen Y. Playford, Alex C. Hannon, Emma R. Barney, Richard I. Walton, « Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction », Chemistry, vol. 19, no 8, , p. 2803-2813 (PMID23307528, DOI10.1002/chem.201203359, lire en ligne).
(en) Jianhua Lin, Liuyan Zhou, Yuyu Shen, Jie Fu, Yanling Chen, Lei Lei, Renguang Ye, Yang Shen, Degang Deng et Shiqing Xu, « [Zn2+–Ge4+] co-substitutes [Ga3+–Ga3+] to coordinately broaden the near-infrared emission of Cr3+ in Ga2O3 phosphors », Physical Chemistry Chemical Physics, vol. 25, no 3, , p. 2090-2097 (PMID36562283, DOI10.1039/D2CP04737C, S2CID254561209, lire en ligne).
(en) Ildikó Cora, Francesco Mezzadri, Francesco Boschi, Matteo Bosi, Maria Čaplovičová, Gianluca Calestani, István Dódony, Béla Pécz et Roberto Fornari, « The real structure of ε-Ga2-O3 and its relation to κ-phase », CrystEngComm, vol. 19, no 11, , p. 1509-1516 (DOI10.1039/C7CE00123A, lire en ligne).
(en) Jianhua Lin, Liuyan Zhou, Yuyu Shen, Jie Fu, Yanling Chen, Lei Lei, Renguang Ye, Yang Shen, Degang Deng et Shiqing Xu, « [Zn2+–Ge4+] co-substitutes [Ga3+–Ga3+] to coordinately broaden the near-infrared emission of Cr3+ in Ga2O3 phosphors », Physical Chemistry Chemical Physics, vol. 25, no 3, , p. 2090-2097 (PMID36562283, DOI10.1039/D2CP04737C, S2CID254561209, lire en ligne).
(en) M. Pavesi, F. Fabbri, F. Boschi, G. Piacentini, A. Baraldi, M. Bosi, E. Gombia, A. Parisini et R. Fornari, « ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors », Materials Chemistry and Physics, vol. 205, , p. 502-507 (DOI10.1016/j.matchemphys.2017.11.023, lire en ligne).
(en) Zhifu Liu, Toshinari Yamazaki, Yanbai Shen, Toshio Kikuta, Noriyuki Nakatani et Yongxiang Li, « O2 and CO sensing of Ga2O3 multiple nanowire gas sensors », Sensors and Actuators B: Chemical, vol. 129, no 2, , p. 666-670 (DOI10.1016/j.snb.2007.09.055, lire en ligne).
(en) D. A. Bauman, A. I. Borodkin, A. A. Petrenko, D. I. Panov, A. V. Kremleva, V. A. Spiridonov, D. A. Zakgeim, M. V. Silnikov, M. A. Odnoblyudov, A. E. Romanov et V. E. Bougrov, « On improving the radiation resistance of gallium oxide for space applications », Acta Astronautica, vol. 180, , p. 125-129 (DOI10.1016/j.actaastro.2020.12.010, Bibcode2021AcAau.180..125B, lire en ligne).
(en) M. Marezio et J. P. Remeika, « Bond Lengths in the α‐Ga2O3 Structure and the High‐Pressure Phase of Ga2−xFexO3 », The Journal of Chemical Physics, vol. 46, no 5, , p. 1862-1865 (DOI10.1063/1.1840945, Bibcode1967JChPh..46.1862M, lire en ligne).
(en) Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng et Masataka Higashiwaki, « β-Gallium oxide power electronics », APL Materials, vol. 10, no 2, , article no 029201 (DOI10.1063/5.0060327, Bibcode2022APLM...10b9201G, S2CID246660179, lire en ligne).
(en) Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky et James S. Speck, « MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V/s at room temperature », APL Materials, vol. 7, no 2, , article no 022506 (DOI10.1063/1.5058059, Bibcode2019APLM....7b2506Z, S2CID104453229, lire en ligne).
(en) Elham Rafie Borujeny, Oles Sendetskyi, Michael D. Fleischauer et Kenneth C. Cadien, « Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition », ACS Applied Materials & Interfaces, vol. 12, no 39, , p. 44225-44237 (PMID32865966, DOI10.1021/acsami.0c08477, S2CID221403770, lire en ligne).
(en) Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng et Masataka Higashiwaki, « β-Gallium oxide power electronics », APL Materials, vol. 10, no 2, , article no 029201 (DOI10.1063/5.0060327, Bibcode2022APLM...10b9201G, S2CID246660179, lire en ligne).
(en) Duyoung Yang, Byungsoo Kim, Tae Hoon Eom, Yongjo Park et Ho Won Jang, « Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective », Electronic Materials Letters, vol. 18, no 2, , p. 113-128 (DOI10.1007/s13391-021-00333-5, Bibcode2022EML....18..113Y, S2CID245773856, lire en ligne).
(en) J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback et J. A. Simmons, « Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges », Advanced Electronic Materials, vol. 4, no 1, , article no 1600501 (DOI10.1002/aelm.201600501, S2CID38628999, lire en ligne).
(en) Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky et James S. Speck, « MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V/s at room temperature », APL Materials, vol. 7, no 2, , article no 022506 (DOI10.1063/1.5058059, Bibcode2019APLM....7b2506Z, S2CID104453229, lire en ligne).
(en) Jianhua Lin, Liuyan Zhou, Yuyu Shen, Jie Fu, Yanling Chen, Lei Lei, Renguang Ye, Yang Shen, Degang Deng et Shiqing Xu, « [Zn2+–Ge4+] co-substitutes [Ga3+–Ga3+] to coordinately broaden the near-infrared emission of Cr3+ in Ga2O3 phosphors », Physical Chemistry Chemical Physics, vol. 25, no 3, , p. 2090-2097 (PMID36562283, DOI10.1039/D2CP04737C, S2CID254561209, lire en ligne).
(en) Samantha B. Reese, Timothy Remo, Johney Green et Andriy Zakutayev, « How Much Will Gallium Oxide Power Electronics Cost? », Joule, vol. 3, no 4, , p. 903-907 (DOI10.1016/j.joule.2019.01.011, S2CID127789383, lire en ligne).
(en) Duyoung Yang, Byungsoo Kim, Tae Hoon Eom, Yongjo Park et Ho Won Jang, « Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective », Electronic Materials Letters, vol. 18, no 2, , p. 113-128 (DOI10.1007/s13391-021-00333-5, Bibcode2022EML....18..113Y, S2CID245773856, lire en ligne).
(en) J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback et J. A. Simmons, « Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges », Advanced Electronic Materials, vol. 4, no 1, , article no 1600501 (DOI10.1002/aelm.201600501, S2CID38628999, lire en ligne).
chemistry-europe.onlinelibrary.wiley.com
(en) Helen Y. Playford, Alex C. Hannon, Emma R. Barney, Richard I. Walton, « Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction », Chemistry, vol. 19, no 8, , p. 2803-2813 (PMID23307528, DOI10.1002/chem.201203359, lire en ligne).